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Results for “OPTICAL TRANSITION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Optical transitions in diamond at ultrahigh pressures

Optical studies on diamond at ultrahigh pressures are described which show that the unique properties of diamonds are affected by such stresses. Spectroscopic measurements show that the optical absorption edge shifts from UV to red with increasing pressures, and Raman scattering measurements how evidence for new structural transitions associated with large macroscopic deformation, beginning at a pressure of about 150 GPa. The changes are reversible and are associated with intense luminescence peaks at 2.0-2.2 eV under 458-514 nm radiation. These results may be related to the onset of bandgap closure in the approach to a new high-pressure phase. These spectral features must also be taken into account when diamond is used as optical windows for ultrahigh-pressure investigations.

Mao, H. K.↗
NASA NTRS1983

Study of multiple optical transitions in 87Rb using laser diodes

Recent work with laser diodes has indicated their potential usefulness in optically pumping atomic frequency standards. Various optical pumping schemes for (87)Rb incorporating such light sources at two D1 frequencies for experimental situations of either evacuated wall-coated cells or atomic beams are considered. Numerical integration of rate equations governing the level populations with arbitrary pumping light choices of intensity, D1 hyperfine transition(s), and polarization and subsequent calculation of scattered light provide a simplified 0-0 hyperfine signal analysis. By frequency modulating one laser diode, two optical transitions were excited in an evacuated wall-coated cell and a large delta m(F) = 1 hf signal was observed.

Newton, C. L. J.↗
NASA NTRS1993

Interband optical transitions between confined and unconfined states in quantum wells

The interband optical absorption in single quantum wells (SQWs) due to transitions between confined states and unconfined continuum states (C-U transitions) were measured, calculated, and compared to absorption due to transitions involving pairs of confined states (C-C transiitons). An In(0.25)Ga(0.75)As/GaAs SQW with a 61-A well width was used in the experiment. A simple model describes how the slow-turnon absorption line shapes characterisic of SQWs evolve into sharp steplike features as more wells are added.

Ksendzov, A.↗
NASA NTRS1972

Spectrocopic measurements of water vapor plasmas at high resolution: The optical transition probabilities for OH (A 2 Sigma - X 2 Pi)

Emission and absorption spectra of water vapor plasmas generated in a wall-stabilized arc at atmospheric pressure and 4 current, and at 0.03 atm and 15 to 50 A, were measured at high spatial and spectral resolution. The gas temperature was determined from the shape of Doppler-broadened rotational lines of OH. The observed nonequilibrium population distributions over the energy levels of atoms are interpreted in terms of a theoretical state model for diffusion-controlled arc plasmas. Excellent correlation is achieved between measured and predicted occupation of hydrogen energy levels. It is shown that the population distribution over the nonpredissociating rotational-vibrational levels of the A 2 Sigma state of OH is close to an equilibrium distribution at the gas temperature, although the total density of this state is much higher than its equilibrium density. The reduced intensities of the rotational lines originating in these levels yielded Boltzmann plots that were strictly linear.

Klein, L.↗
NASA NTRS1982

The need for an optical transition detection system in the NTF

Methods for transition detection were studied. The very high test and model costs necessitate testing of any new configuration over a range of Reynolds numbers for correlation with data obtained in conventional tunnels. The Reynolds number variations will be carried out at constant dynamic pressure, i.e., constant aeroelastic condition, by varying test temperature. Boundary layer transition cannot be expected to occur at the full scale location at significantly less than full-scale Reynolds numbers, and transition patterns will change with varying Reynolds number. Knowledge of the location of transition on model surfaces is essential for correct interpretation of drag data. The importance of transition, the limitations of artificial transition fixing, and their relation to the NTF are reviewed. The calculated minimum roughness height to instantaneously trip transition on a model transport wing over a range of Reynolds numbers of interest is shown in the NTF.

Fancher, M. F.↗
NASA NTRS1999

Terahertz Optical Gain Based on Intersubband Transitions in Optically-Pumped Semiconductor Quantum Wells: Coherent Pumped-Probe Interactions

Terahertz optical gain due to intersubband transitions in optically-pumped semiconductor quantum wells (QW's) is calculated nonperturbatively. We solve the pump- field-induced nonequilibrium distribution function for each subband of the QW system from a set of rate equations that include both intrasubband and intersubband relaxation processes. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. We show that the coherent pump and signal wave interactions contribute significantly to the THz gain. Because of the optical Stark effect and pump-induced population redistribution, optical gain saturation at larger pump intensities is predicted.

Liu, Ansheng↗
NASA NTRS1972

Anisotropic ultrahigh gain emission observed in rotational transitions in optically pumped HF gas.

Gain and laser oscillations are obtained on rotational transitions of the first excited vibrational state of HF gas at room temperature, resonantly pumped by the 2.7-micron lines of a pulsed HF laser. Pumping the P-branch transitions connecting the ground and first excited vibrational states produces gain at the coupled rotational transitions at 36, 42, 51, 63, 84, and 126 microns. The gain exhibits directional properties characteristic of a unidirectional amplifier predicted by a recent theory. The incremental gains of these lines are very large, in excess of 1/cm, and the lines oscillate easily without mirrors (superradiance).

Skribanowitz, N.↗
NASA NTRS2001

Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(x)V(1-x), alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(x),V(1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(x)Te(l-x) and ZnSe(Y)Te(1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(y)Te(1-y) alloys in the entire composition range, 0 less than or equal to y less than or equal to 1. The samples used in this study are bulk ZnSe(y)Te(1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the interaction between localized Se states and the conduction band. On the other hand we show that the large band gap reduction observed on the Se-rich side of the alloy system is a result of an interaction between the localized Te level and the valence bands. This interaction leads to the formation of a Te-like valence band edge that strongly interacts with the light hole valence band. Calculations based on a modified k p model account for the reduction of the band gap and the large increase of the spin-orbit splitting observed in Se-rich ZnSe(y)Te(l-y) alloys. We will also discuss the importance of these new results for understanding of the electronic structure and band offsets in other highly mismatched alloy systems.

Yu, Kin Man↗
NASA NTRS2001

Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(sub x)V(sub 1-x) alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(sub x)V(sub 1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(sub x)Te(sub 1-x) and ZnSe(sub y)Te(sub 1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(sub y)Te(sub 1-y) alloys in the entire composition range, y between 0 and 1. The samples used in this study are bulk ZnSe(sub y)Te(sub 1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the interaction between localized Se states and the conduction band. On the other hand we show that the large band gap reduction observed on the Se-rich side of the alloy system is a result of an interaction between the localized Te level and the valence bands. This interaction leads to the formation of a Te-like valence band edge that strongly interacts with the light hole valence band. Calculations based on a modified k(sup dot)p model account for the reduction of the band gap and the large increase of the spin-orbit splitting observed in Se-rich ZnSe(sub y)Te(sub 1-y) alloys. We will also discuss the importance of these new results for understanding of the electronic structure and band offsets in other highly mismatched alloy systems.

Yu, Kin Man↗
NASA NTRS2011

Hg-201 (+) CO-Magnetometer for HG-199(+) Trapped Ion Space Atomic Clocks

Local magnetic field strength in a trapped ion atomic clock is measured in real time, with high accuracy and without degrading clock performance, and the measurement is used to compensate for ambient magnetic field perturbations. First and second isotopes of an element are co-located within the linear ion trap. The first isotope has a resonant microwave transition between two hyperfine energy states, and the second isotope has a resonant Zeeman transition. Optical sources emit ultraviolet light that optically pump both isotopes. A microwave radiation source simultaneously emits microwave fields resonant with the first isotope's clock transition and the second isotope's Zeeman transition, and an optical detector measures the fluorescence from optically pumping both isotopes. The second isotope's Zeeman transition provides the measure of magnetic field strength, and the measurement is used to compensate the first isotope's clock transition or to adjust the applied C-field to reduce the effects of ambient magnetic field perturbations.

Burt, Eric A.↗