Search NASA⌕ Search

SEARCH · Search NASA

Results for “Open circuit voltage characterization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2021

Experimental Data on Open Circuit Voltage Characterization for Li-Ion Batteries

In this article, we present the datasets collected from nine different Li-ion batteries. These datasets contain voltage, current and time measurements during a full charge-discharge cycle of a battery at very low current (that is nearly at �/30 rate). Such low current rate data is suitable for open circuit voltage characterization. The collection of this data was done through the use of an Arbin battery cycler and a thermal chamber was used to control the test temperature. Data were collected over a wide range of temperatures from −25∘C to 50∘C.

Battery management system↗
NASA NTRS1984

Characterization of Open Circuit Voltage and Capacity as a Function of Time

It is noted from the data presented that Li/BCX cells lose approximately 8% of their rated capacity in the first 2 months of storage. After this period of time, little difference is noted in the average realized capacity; however, a significant increase in the range is observed. Over the same period of time the OCV falls at a rate of 0.02V per 1,000 hours. After a period of 8,000 hours the OCV appears stabilize at a value of approximately 3.75V. This may be related to changes in Cl2 concentration due to self-discharge or other reactions. These data indicate that no correlation exists between the reduced open circuit voltage and the realized capacity.

Krehl, P. W.↗
NASA NTRS1976

Studies of silicon p-n junction solar cells

Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.

Lindholm, F. A.↗
NASA NTRS2006

Reliability of Radioisotope Stirling Convertor Linear Alternator

Onboard radioisotope power systems being developed and planned for NASA s deep-space missions would require reliable design lifetimes of up to 14 years. Critical components and materials of Stirling convertors have been undergoing extensive testing and evaluation in support of a reliable performance for the specified life span. Of significant importance to the successful development of the Stirling convertor is the design of a lightweight and highly efficient linear alternator. Alternator performance could vary due to small deviations in the permanent magnet properties, operating temperature, and component geometries. Durability prediction and reliability of the alternator may be affected by these deviations from nominal design conditions. Therefore, it is important to evaluate the effect of these uncertainties in predicting the reliability of the linear alternator performance. This paper presents a study in which a reliability-based methodology is used to assess alternator performance. The response surface characterizing the induced open-circuit voltage performance is constructed using 3-D finite element magnetic analysis. Fast probability integration method is used to determine the probability of the desired performance and its sensitivity to the alternator design parameters.

Shah, Ashwin↗
NASA NTRS1977

Measurement of material parameters that limit the open-circuit voltage in P-N-junction silicon solar cells

The greatest gains in solar energy conversion efficiency of p-n-junction silicon solar cells come from increasing the open-circuit voltage V sub OC; it is important to understand and characterize the material parameters that limit the V sub OC. Strong experimental evidence exists to support the assertion that either an anomalously large minority carrier charge storage or an anomalously small minority carrier lifetime in the quasi-neutral emitter region limits the open circuit voltage. A method is presented for measuring charge storage and effective lifetime. Static and transient measurements are analyzed using physical models of the solar cell characteristics. This analysis yields the emitter charge storage and life-time, which then can be related to the various physical mechanisms, such as energy band gap shrinkage, that have been proposed earlier as responsible for limiting V sub OC.

Lindholm, F. A.↗
NASA NTRS1987

Test results of a 60 volt bipolar nickel-hydrogen battery

In July, l986, a high-voltage nickel-hydrogen battery was assembled at the NASA Lewis Research Center. This battery incorporated bipolar construction techniques to build a 50-cell stack with approximately 1.0 A-hr capacity (C) and an open-circuit voltage of 65 V. The battery was characterized at both low and high current rates prior to pulsed and nonpulsed discharges. Pulse discharges at 5 and 10 C were performed before placing the battery on over 1400, 40% depth-of-discharge, low-earth-orbit cycles. The successful demonstration of a high-voltage bipolar battery in one containment vessel has advanced the technology to where nickel-hydrogen high-voltage systems can be constructed of several modules instead of hundreds of individual cells.

Cataldo, Russell L.↗
NASA NTRS1987

Test results of a 60 volt bipolar nickel-hydrogen battery

In July 1986, a high-voltage nickel-hydrogen battery was assembled at the NASA Lewis Research Center. This battery incorporated bipolar construction techniques to build a 50-cell stack with approximately 1.0 A-hr capacity (C) and an open-circuit voltage of 65 V. The battery was characterized at both low and high current rates prior to pulsed and nonpulsed discharges. Pulse discharges at 5 and 10 C were performed before placing the battery on over 1400, 40-percent depth-of-discharge, low-earth-orbit cycles. The successful demonstration of a high-voltage bipolar battery in one containment vessel has advanced the technology to where nickel-hydrogen high-voltage systems can be constructed of several modules instead of hundreds of individual cells.

Cataldo, Robert L.↗
NASA NTRS1975

Studies of silicon PN junction solar cells

Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

Lindholm, F. A.↗
NASA NTRS2003

Dye-Sensitized Solar Cells for Space Power

During the course of this grant, dye-sensitized solar cells were prepared and characterized. The solar cells were prepared using materials (dyes, electrolytes, transparent conductive oxide coated glass, nanocrystalline TiO2) entirely prepared in-house, as well as prepared using materials available commercially. Complete cells were characterized under simulated AM0 illumination. The best cell prepared at NASA had an AM0 efficiency of 1.22% for a 1.1 sq cm cell. Short circuit current (Isc), open circuit voltage (Voc) and fill factor (FF) for the cell were 6.95 mA, 618 mV and 42.8%, respectively. For comparison purposes, two commercially prepared dye-sensitized solar cells were obtained from Solaronix SA, Aubonne, Switzerland. The Solaronix cells were also characterized under simulated AM0 illumination. The best cell from Solaronix had an active area of 3.71 sq cm and measured an AM0 efficiency of 3.16%. with Isc, Voc and FF of 45.80 mA, 669.6 mV and 52.3%, respectively. Both cells from Solaronix were rapid thermal cycled between -80 C and 80 C. Thermal cycling led to a 4.6% loss of efficiency in one of the cells and led to nearly a complete failure in the second cell.

Harris, Jerry D.↗
NASA NTRS1982

Reduction of solar cell efficiency by bulk defects across the back-surface-field junction

The degradation of solar cell performance due to bulk defects distributed across the back-surface field junction is analyzed in terms of a three-region developed-perimeter model. Families of curves are computed and their physical significance is discussed in detail with reference to three parameters used to characterize the defects: defect area, defect density, and defect surface recombination velocity. A reduction in the open-circuit voltage due to the presence of a defect is expressed as a function of the defect area, density, cell thickness, and defect surface recombination velocity. Numerical examples are presented to illustrate the importance of the particular defect parameters.

Sah, C. T.↗
NASA NTRS1978

Thin silicon solar cell performance characteristics

Refined techniques for surface texturizing, back surface field and back surface reflector formation were evaluated for use with shallow junction, single-crystal silicon solar cells. Each process was characterized individually and collectively as a function of device thickness and bulk resistivity. Among the variables measured and reported are open circuit voltage, short circuit current and spectral response. Substantial improvements were obtained by the utilization of a low cost aluminum paste process to simultaneously remove the unwanted n(+) diffused region, form the back surface field and produce an ohmic contact metallization. The highly effective BSF which results from applying this process has allowed fabrication of cells 0.05 mm thick with initial outputs as high as 79.5 mW/4 sq cm (28 C, AM0) and superior electron radiation tolerance. Cells of 0.02 mm to 0.04 mm thickness have been fabricated with power to mass ratios well in excess of 2 watts per gram.

Gay, C. F.↗
NASA NTRS1984

Evaluation program for secondary spacecraft cells. Initial evaluation tests of General Electric Company 4.0 ampere-hour nickel-cadmium spacecraft cells for the AMPTE satellite program

Cells found to have electrolyte leakage, internal shorts, low capacity, or inability of any cell to recover its open circuit voltage above 1.150 volts during the internal short test are addressed. The Active Magnetic Particle Tracer Explorer (AMPTE) cell design was characterized and the effects of specific mission parameters on cell life were demonstrated.

Harkness, J. D.↗
NASA NTRS1982

Reduction of solar cell efficiency by edge defects across the back-surface-field junction - A developed perimeter model

Material imperfections, impurity clusters and fabrication defects across the back-surface-field junction can degrade the performance of high-efficiency solar cells. The degradation from defects appearing on the circumference of a solar cell is analyzed using a two-region developed perimeter device model. The width of the defective perimeter region is characterized by the range or the distance-of-influence of the defective edge and this width is about two diffusion lengths. The defective edge is characterized by a surface recombination velocity. Family of theoretical curves and numerical examples are presented to show that significant reduction of open-circuit voltage can occur in high-efficiency cells which are thin compared with the diffusion length. In one example, the degradation is decreased from 135 mV to 75 mV when the cell size is increased from 10 to 100 times the diffusion length in a thin cell whose thickness is 1% of the diffusion length.

Sah, C. T.↗
NASA NTRS2005

Single Wall Carbon Nanotube-polymer Solar Cells

Investigation of single wall carbon nanotube (SWNT)-polymer solar cells has been conducted towards developing alternative lightweight, flexible devices for space power applications. Photovoltaic devices were constructed with regioregular poly(3-octylthiophene)-(P3OT) and purified, >95% w/w, laser-generated SWNTs. The P3OT composites were deposited on ITO-coated polyethylene terapthalate (PET) and I-V characterization was performed under simulated AM0 illumination. Fabricated devices for the 1.0% w/w SWNT-P3OT composites showed a photoresponse with an open-circuit voltage (V(sub oc)) of 0.98 V and a short-circuit current density (I(sub sc)) of 0.12 mA/sq cm. Optimization of carrier transport within these novel photovoltaic systems is proposed, specifically development of nanostructure-SWNT complexes to enhance exciton dissociation.

Bailey, Sheila G.↗
NASA NTRS1991

Characterization of resonant tunneling diodes for microwave and millimeter-wave detection

The authors report on the direct detection capabilities of resonant tunneling diodes in the 10-100 GHz range. An open circuit voltage sensitivity of 1750 mV/mW (in Ka-band) was measured. This is higher than the sensitivity of comparatively based commercially available solid-state detectors. The detector properties are a strong function of diode bias and the measured tangential signal sensitivity (-32 dBm at Ka-band with 1-MHz bandwidth) and the dynamic range (25 dB) of the diode are smaller compared to other solid-state detectors.

Mehdi, I.↗
NASA NTRS1979

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, open circuit voltage, and output power, voltage, and current at the maximum power point. Incorporated in the report are the distributions of the prestress electrical data for all cell types. Data were also obtained on cell series and shunt resistance.

Prince, J. L.↗
NASA NTRS1982

Sun sensing guidance system for high altitude aircraft

A sun sensing guidance system for high altitude aircraft is described. The system is characterized by a disk shaped body mounted for rotation aboard the aircraft in exposed relation to solar radiation. The system also has a plurality of mutually isolated chambers; each chamber being characterized by an opening having a photosensor disposed therein and arranged in facing relation with the opening for receiving incident solar radiation and responsively providing a voltage output. Photosensors are connected in paired relation through a bridge circuit for providing heading error signals in response to detected imbalances in intensities of solar radiation.

Reed, R. D.↗
NASA NTRS2008

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

Quantum Efficiency↗