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Electro-optic crystals and their use for light modulation

Several methods of modulating a beam of light, which have been described in the literature, utilizing the influence of an electrical signal on the birefringence of certain crystals, will be reviewed. These employ optics which respond to the state of polarization of a light beam, and include intensity modulation, position modulation, and the possibility of an electrically tuned optical filter. The influence of the piezo-optic, or strain contribution to the total electro-optic response in the design of an optoelectronic device will be discussed. Current experimental work in our laboratory in which the strain contribution is separated from the direct effect will be described. The strain-free effect is measured by applying a step voltage to the crystal, and observing the initial response. The electro-optical transient response can be observed with nanosecond time resolution. An electronic sampling technique is used to extract the desired response from photon noise. The stress-free or low-frequency effect is measured similarly but at low audio frequencies. Single crystal tetragonal BaT10 3 has been investigated in detail with the result that the strain-optic contribution to the low frequency effect r_(c) = r_(33)—r_(13) is about 80% of the total, where it is only 10% in KDP and 45% in ADP. The magnitudes of the electro-optic effect, dielectric constant, and other related properties are compared for several materials potentially useful as electro-optic modulators, and some comments are made about the practical problems of building a modulator.

ELECTRO-OPTICS

Orbital Processing of High-Quality CdTe Compound Semiconductors

CdZnTe crystals were grown in one-g and in micro-g for comparative analysis. The two micro-g crystals were grown in the Crystal Growth Furnace during the First United States Microgravity Laboratory mission (USML-1). The samples were analyzed for chemical homogeneity, structural perfection, and optoelectronic performance (infrared transmission). Fourier Transform Infrared (FTIR) transmission of both ground and flight materials showed that the infrared transmission was close to theoretical, 63% versus 66%, suggesting that the material was close to the stochiometric composition during both the ground and flight experiments. Infrared microscopy confirmed that the principal precipitates were Te and their size (1-10 microns) and density suggested that the primary flight and ground base samples experienced similar cooling rates. Macrosegregation was predicted, using scaling analysis, to be low even in one-g crystals and this was confirmed experimentally, with nearly diffusion controlled growth achieved even in the partial mixing regime on the ground. Radial segregation was monitored in the flight samples and was found to vary with fraction solidified, but was disturbed due to the asymmetric grvitational and thermal fields experienced by the flight samples. The flight samples, however, were found to be much higher in structural perfection than the ground samples produced in the same furnace under identical growth conditions except for the gravitational level. Rocking curve widths were found to be substantially reduced, from 20/35 (one-g) to 9/20 (micro-g) for the best regions of the crystals. The full width at half maximum (FWHM) of 9 arc seconds is as good as the best reported terrestrially for this material. The ground samples were found to have a fully developed mosaic structure consisting of subgrains, whereas the flight sample dislocations were discrete and no mosaic substructure was evident. The defect density was reduced from 50-100,000 (one-g) to 500-25000 EPD (micro-g). These results were confirmed using rocking curve analysis, synchrotron topography, and etch pit analysis. The low dislocation density is thought to have resulted from the near-absence of hydrostatic pressure which allowed the melt to solidify with minimum or no wall contact, resulting in very low stress being exerted on the crystal during growth or during post-solidification cooling.

D J Larson, Jr.