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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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13 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

A Cryogenic GaAs PHEMT/ Ferroelectric Ku-Band Tunable Oscillator

A Ku-band tunable oscillator operated at and below 77 K is described. The oscillator is based on two separate technologies: a 0.25 mm GaAs pseudomorphic high electron mobility transistor (PHEMT) circuit optimized for cryogenic operation, and a gold microstrip ring resonator patterned on a thin ferroelectric (SrTiO3) film which was laser ablated onto a LaAlO3 substrate. A tuning range of up to 3% of the center frequency was achieved by applying dc bias between the ring resonator and ground plane. To the best of our knowledge, this is the first tunable oscillator based on a thin film ferroelectric structure demonstrated in the microwave frequency range. The design methodology of the oscillator and the performance characteristics of the tunable resonator are described.

Romanofsky, Robert R.↗
NASA NTRS2005

X-Band, 17-Watt Solid-State Power Amplifier

An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.

Mittskus, Anthony↗
NASA NTRS1996

Highly Efficient Amplifier for Ka-Band Communications

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power level of 1.1 W was achieved with a 12-dB gain and a 36-percent efficiency. This represents the best reported combination of power and efficiency at this frequency. In addition to delivering excellent power and gain, this Ka-band MMIC power amplifier has an efficiency that is 10 percent greater than existing designs. The unique design offers an excellent match for spacecraft applications since the amplifier supply voltage is closely matched to the typical value of spacecraft bus voltage. These amplifiers may be used alone in applications of 1 W or less, or several may be combined or used in an array to produce moderate power, Ka-band transmitters with minimal power combining and less thermal stress owing to the combination of excellent efficiency and power output. The higher voltage operation of this design may also save mass and power because the dc-dc power converter is replaced with a simpler voltage regulator.

Source record↗
NASA NTRS2011

High-Efficiency Ka-Band Waveguide Two-Way Asymmetric Power Combiner

NASA is planning a number of Space Exploration, Earth Observation and Space Science missions where Ka-band solid-state power amplifiers (SSPAs) could have a role. Monolithic microwave integrated circuit (MMIC) based SSPAs with output powers on the order of 10 W at Ka-band frequencies would be adequate to satisfy the data transmission rate requirements at the distances involved. MMICs are a type of integrated circuit fabricated on a GaAs wafer, which operates at micro wave frequencies and performs the function of signal amplification. The highest power Ka-band (31.8 to 32.3 GHz) SSPA to have flown in space had an output power of 2.6 W with an overall efficiency of 14.3 percent. This SSPA was built around discrete GaAs pHEMT (high electron mobility transistor) devices and flew aboard the Deep Space One spacecraft. State-of-the-art GaAs pHEMT-based MMIC power amplifiers (PAs) can deliver RF power at Ka-band frequencies anywhere from 3 W with a power added efficiency (PAE) of 32 percent to 6 W with a PAE of 26 percent. However, to achieve power levels higher than 6 W, the output of several MMIC PAs would need to be combined using a high-efficiency power combiner. Conventional binary waveguide power combiners, based on short-slot and magic-T circuits, require MMIC PAs with identical amplitude and phase characteristics for high combining efficiency. However, due to manufacturing process variations, the output powers of the MMIC PAs tend to be unequal, and hence the need to develop unequal power combiners. A two-way asymmetric magic-T based power combiner for MMIC power amplifiers, which can take in unequal inputs, has been successfully designed, fabricated, and characterized over NASA s Deep Space Network (DSN) frequency range of 31.8 to 32.3 GHz. The figure is a transparent view of the a sym - metric combiner that shows the 4-port configuration and the internal structure. The rod, post, and iris are positioned by design to achieve the desired asymmetric power ratio, phase equality, and port isolation. Although the combiner was designed for an input power ratio of 2:1, it can be custom-designed for any arbitrary power ratio and frequency range. The manufactured prototype combiner was precision machined from aluminum and is less than 2 in.3 (32.8 cm3). Previously investigated rectangular waveguide unequal power combiners were based on shunt/series coupling slots, E-plane septums, or H-plane T-junctions. All the prior art unequal power combiners operated at or below X-band (10 GHz) frequencies and were primarily used in the feed network of antenna arrays. The only reported asymmetric magic-T was developed as a 2:1 power divider for operation at a much lower frequency, around 500 MHz. The measured power ratio when tested as a power divider was very close to 2 and the phase balance was within 2.6, resulting in near ideal performance. When tested as a combiner using two MMIC SSPAs with a 2:1 power output ratio, an efficiency greater than 90 percent was demonstrated over the 500 MHz DSN frequency range. The return loss at the combiner output port (1) was greater than 18 dB and the input port (2 and 3) isolation was greater than 22 dB. The results show the asymmetric combiner to be a good candidate for high-efficiency power combining of two or more SSPAs needed to achieve the 6 to 10 W required by space communications systems of future NASA missions.

Wintucky, E. G.↗
NASA NTRS1994

Characteristics of III-V Semiconductor Devices at High Temperature

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

Simons, Rainee N.↗
NASA NTRS1995

Integrated Cryogenic Satellite Communications Cross-Link Receiver Experiment

An experiment has been devised which will validate, in space, a miniature, high-performance receiver. The receiver blends three complementary technologies; high temperature superconductivity (HTS), pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuits (MMIC), and a miniature pulse tube cryogenic cooler. Specifically, an HTS band pass filter, InP MMIC low noise amplifier, HTS-sapphire resonator stabilized local oscillator (LO), and a miniature pulse tube cooler will be integrated into a complete 20 GHz receiver downconverter. This cooled downconverter will be interfaced with customized signal processing electronics and integrated onto the space shuttle's 'HitchHiker' carrier. A pseudorandom data sequence will be transmitted to the receiver, which is in low Earth orbit (LEO), via the Advanced Communication Technology Satellite (ACTS) on a 20 GHz carrier. The modulation format is QPSK and the data rate is 2.048 Mbps. The bit error rate (BER) will be measured in situ. The receiver is also equipped with a radiometer mode so that experiment success is not totally contingent upon the BER measurement. In this mode, the receiver uses the Earth and deep space as a hot and cold calibration source, respectively. The experiment closely simulates an actual cross-link scenario. Since the receiver performance depends on channel conditions, its true characteristics would be masked in a terrestrial measurement by atmospheric absorption and background radiation. Furthermore, the receiver's performance depends on its physical temperature, which is a sensitive function of platform environment, thermal design, and cryocooler performance. This empirical data is important for building confidence in the technology.

Romanofsky, R. R.↗
NASA NTRS1997

Ka-Band GaAs FET Monolithic Power Amplifier Development

Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract.

Saunier, Paul↗
NASA NTRS1998

K-Band Power Enbedded Transmission Line (ETL) MMIC Amplifiers for Satellite Communication Applications

The design, fabrication, and performance of K-band high-efficiency, linear power pHEMT amplifiers implemented in Embedded Transmission Line (ETL) MMIC configuration with unthinned GaAs substrate and topside grounding are reported. A three-stage amplifier achieved a power-added efficiency of 40.5% with 264 mW output at 20.2 GHz. The linear gain is 28.5 dB with 1-dB gain compression output power of 200 mW and 31% power-added efficiency. The carrier-to-third-order intermodulation ratio is approx. 20 dBc at the 1-dB compression point. A RF functional yield of more than 90% has been achieved.

Tserng, Hua-Quen↗
NASA NTRS1997

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Ponchak, George E.↗
NASA NTRS2010

Ka-Band Waveguide Two-Way Hybrid Combiner for MMIC Amplifiers

The design, simulation, and characterization of a novel Ka-band (32.05 0.25 GHz) rectangular waveguide two-way branch-line hybrid unequal power combiner (with port impedances matched to that of a standard WR-28 waveguide) has been created to combine input signals, which are in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The measured combining efficiency is 92.9 percent at the center frequency of 32.05 GHz. This circuit is efficacious in combining the unequal output power from two Ka-band GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with high efficiency. The component parts include the branch-line hybrid-based power combiner and the MMIC-based PAs. A two-way branch-line hybrid is a four-port device with all ports matched; power entering port 1 is divided in phase, and into the ratio 2:1 between ports 3 and 4. No power is coupled to port 2. MMICs are a type of integrated circuit fabricated on GaAs that operates at microwave frequencies, and performs the function of signal amplification. The power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA's deep space frequency band. The power combiner would have an output return loss better than 20 dB. Isolation between the output port and the isolated port is greater than 25 dB. Isolation between the two input ports is greater than 25 dB. The combining efficiency would be greater than 90 percent when the ratio of the two input power levels is two. The power combiner is machined from aluminum with E-plane split-block arrangement, and has excellent reliability. The flexibility of this design allows the combiner to be customized for combining the power from MMIC PAs with an arbitrary power output ratio. In addition, it allows combining a low-power GaAs MMIC with a high-power GaN MMIC. The arbitrary port impedance allows matching the output impedance of the MMIC PA directly to the waveguide impedance without transitioning first into a transmission line with characteristic impedance of 50 ohms. Thus, by eliminating the losses associated with a transition, the overall SSPA efficiency is enhanced. For reducing the cost and weight when required in very large quantities, such as in the beam-forming networks of phased-array antenna systems, the combiner can be manufactured using metal-plated plastic. Two hybrid unequal power combiners can be cascaded to realize a non-binary combiner (for e.g., a three-way) and can be synergistically optimized for low VSWR (voltage standing wave ratio), low insertion loss, high isolation, and wide bandwidth using commercial off-the-shelf electromagnetic software design tools.

Simons, Rainee N.↗
NASA NTRS2012

670-GHz Down- and Up-Converting HEMT-Based Mixers

A large category of scientific investigation takes advantage of the interactions of signals in the frequency range from 300 to 1,000 GHz and higher. This includes astronomy and atmospheric science, where spectral observations in this frequency range give information about molecular abundances, pressures, and temperatures of small-sized molecules such as water. Additionally, there is a minimum in the atmospheric absorption at around 670 GHz that makes this frequency useful for terrestrial imaging, radar, and possibly communications purposes. This is because 670 GHz is a good compromise for imaging and radar applications between spatial resolution (for a given antenna size) that favors higher frequencies, and atmospheric losses that favor lower frequencies. A similar trade-off applies to communications link budgets: higher frequencies allow smaller antennas, but incur a higher loss. All of these applications usually require converting the RF (radio frequency) signal at 670 GHz to a lower IF (intermediate frequency) for processing. Further, transmitting for communication and radar generally requires up-conversion from IF to the RF. The current state-of-the-art device for performing the frequency conversion is based on Schottky diode mixers for both up and down conversion in this frequency range for room-temperature operation. Devices that can operate at room temperature are generally required for terrestrial, military, and planetary applications that cannot tolerate the mass, bulk, and power consumption of cryogenic cooling. The technology has recently advanced to the point that amplifiers in the region up to nearly 1,000 GHz are feasible. Almost all of these have been based on indium phosphide pseudomorphic high-electron mobility transistors (pHEMTs), in the form of monolithic microwave integrated circuits (MMICs). Since the processing of HEMT amplifiers is quite differ en t from that of Schottky diodes, use of Schottky mixers requires separate MMICs for the mixers and amplifiers. Fabrication of all the down-/up-conversion circuitry on single MMICs, using a ll-HEMT circuits, would constitute a major advance in circuit simplicity.

Schlecht, Enrich T.↗
NASA NTRS2000

Monolithic Power Amplifiers Covering 70-115 GHz

A number of monolithic W-band power amplifiers have been developed for local oscillators of the Far Infrared and Sub-millimeter Telescope.

power amplifiers monolithic microwave integrated c↗