Search NASA⌕ Search

SEARCH · Search NASA

Results for “PHOTOCONDUCTOR”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Physics and design of advanced IR bolometers and photoconductors

The state-of-the-art in photoconductors and bolometers is reviewed, centering on the materials development and concepts of extrinsic Si and Ge devices. It is suggested that in the field of 2-D detector arrays the hybrid circuits containing a photoconductor or a photodiode array, bonded with In solder to a switched MOS readout device with up to 60 x 60 elements, will produce superior performance. Other systems discussed include charge-coupled devices, developed for visible-light imaging and adapted to IR imaging, and charge-injection devices, a monolithic combination of a standard photoconductor and a metal-insulator-semiconductor capacitor. Finally, it is pointed out that a nonequilibrium theory of bolometer noise demonstrates the possibility of reducing the traditionally accepted noise limits by 60 percent for Johnson noise and 30 percent for the noise from phonons in the thermal link of the bolometer.

Haller, E. E.↗
NASA NTRS1975

Laser scanned image sensors using photoconductors with deep traps

Photoconductor records image when holes and electrons are trapped inside it due to incident photons. Image can be read out by exposing photoconductor to scanning laser beam. Photons from scanning laser empty traps, generating photocurrent. Image information is obtained by detecting this photocurrent synchronously with laser scan.

Maserjian, J.↗
NASA NTRS1986

Ge:Be infrared photoconductors

Ge:Be photoconductors were optimized for the 30 to 50 micron wavelength range. Crystal growth of detector quality material requires good control of both the Be and residual impurity doping. Detective quantum efficiencies of n sub d = 46% at 5 A/W were achieved at a photon background of 10 to the 8th power p/s. The responsivity of Ge:Be detectors can be strongly temperature-dependent when the residual shallow levels in the material are closely compensated. Transient responses on the order of approximately 1 second were observed in some materials. The role of residual shallow impurities on the performance of photoconductors doped with semi-deep and deep impurities is discussed.

Haegel, N. M.↗
NASA NTRS1989

Stressed Ge:Ga photoconductors for space-based astronomy. (Is there life beyond 120 micron)

Information is given in viewgraph form. Information is given on the characteristics of stressed Ge:Ga, a spring type stress cavity, mounting hardware, materials parameters affecting dark current, and the behavior of low dark current stressed Ge:Ga. It is concluded that detectors exist today for background-limited detection at 200 microns, that researchers are narrowing in on the significant parameters that effect dark current in stressed photoconductors, that these findings may be applied to other photoconductor materials, and that some creative problem solving for an ionizing effect reset mechanism is needed.

Beeman, J. W.↗
NASA NTRS1990

High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs

A GaAs material grown by molecular beam epitaxy at a low substrate temperature was used to fabricate a photoconductor switch that produces 6-V picosecond electrical pulses. The pulses were produced on a microwave coplanar-strip transmission line lithographically patterned on the low-temperature (LT) GaAs. A 150-fs laser pulse was used to generate carriers in the LT GaAs gap between the metal strips, partially shorting a high DC voltage placed across the lines. The 6-V magnitude of the electrical pulses obtained is believed to be limited by the laser pulse power and not by the properties of the LT GaAs. Experiments were also performed on a picosecond photoconductor switch fabricated on a conventional ion-damaged silicon-on-sapphire substrate. Although comparable pulse durations were obtained, the highest pulse voltage achieved with the latter device was 0.6 V.

Frankel, Michael Y.↗
NASA NTRS1996

Extrinsic germanium photoconductors for far-IR astronomy: Research results and works in progress

Some Ge:Ga and Ge:Sb photoconductor materials and detectors that are currently under development are reported. The best Ge:Ga devices exhibit dark currents of lower than 200 electrons/s, with a concurrent responsivity of 2 A/W and a detective quantum efficiency (DQE) of 5 percent. For higher backgrounds, an operating temperature of 3 K can be used. This increases the DQE to 7 percent and the responsivity to 4.5 A/W. Investigations were initiated into n-type Ge:Sb as an alternative photoconductive material. Two crystals of Ge:Sb were grown and a number of test detectors were fabricated and evaluated. At 2 K, the best device produced dark currents of less than 100 electrons/s with concurrent responsivity of 1 A/W and DQE of 4 percent, and at 3 K, produced currents of 10(exp 5) electrons/s with a DQE of 7 percent and a responsivity of 4 A/W. Using p-type Ge:Ga crystals, two dimensional monolithic photoconductor arrays are being constructed. Future work will focus on measuring pixel-to-pixel homogeneity, cross talk issues, overall sensitivity and suitability for photometric instruments.

Beeman, J. W.↗
NASA NTRS1974

Some aspects of optical feedback with cadmium sulfide and related photoconductors

A primary limitation of many solid state photoconductors used in electro-optical systems is their slow response in converting varying light intensities into electrical signals. An optical feedback technique is presented which can extend the frequency response of systems that use these detectors by orders of magnitude without adversely affecting overall signal-to-noise ratio performance. The technique is analyzed to predict the improvement possible and a system is implemented using cadmium sulfide to demonstrate the effectiveness of the technique and the validity of the analysis.

Katzberg, S. J.↗
NASA NTRS1977

Optically activated switch/modulator using a photoconductor and two channel waveguides

An optically activated switch was fabricated on LiNbO3 substrate by deposition of photoconductor-metal electrode structure on two channel waveguides obtained by the outdiffusion process. One waveguide was overcoated with a CdS film, and served as a light detector which converted the optical signal in that waveguide into an electric signal. Utilizing the electrooptic effect, this electric signal modulated the light propagating in the second waveguide by changing the refractive index, and the cutoff condition, of the waveguiding channel between two metal electrodes. The waveguides in the optically controlled switch can be either single or multimode. The length of the device can be short in comparison with other switching schemes. When binary optical signals are applied to the two waveguides, the switch can perform logic AND, NEGATION, OR and pseudo-amplification operations.

Goldberg, L.↗
NASA NTRS1983

Performance and materials aspects of Ge:Be photoconductors

Ge:Be photoconductors were developed for low photon background applications in the 30 to 50 MM wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Beryllium doped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of approx. one million torr. An optimum detective quantum efficiency of 46% at a background flux of 1.5 x 10 to the 8th power photons/second (7 x 10 to the 13th power W) was reported. Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors.

Haegel, N. M.↗
NASA NTRS1983

Performance and materials aspects of Ge:Be photoconductors

Ge:Be photoconductors have been developed for low photon background applications in the 30 - 50 micron wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Beryllium-doped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of approximately 10 to the -6th torr. An optimum detective quantum efficiency of 46 percent at a background flux of 1.5 x 10 to the 8th photons/second (7 x 10 to the -13th W is reported. Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors.

Haegel, N. M.↗
NASA NTRS1986

Transient response of Ge:Be and Ge:Zn FIR photoconductors under low background photon flux conditions

An experimental study of the transient behavior of Ge:Be and Ge:Zn photoconductors to changes in photon flux rates has been performed under the low background flux conditions (10 to the 8th photon/s) typical of astronomy and astrophysics applications. A characteristic transient behavior with time constants ranging from 0.1 to greater than 5 s has been observed in both materials when the shallow levels are very closely compensated. The detector response consists of both a fast and a slow component. The amplitude of the slow component can be up to 10 times greater than the initial fast component. It has been established that this phenomenon cannot be explained by current models of carrier sweep-out or dielectric relaxation. The transient behavior has been characterized as a function of temperature, electric field, photoconductive gain and material parameters.

Haegel, N. M.↗