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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Enhanced UV–Vis Rejection Ratio in Metal/BaTiO 3 /β–Ga 2 O 3 Solar–Blind Photodetectors

The fabrication and characterization of metal/BaTiO 3 /β-Ga 2 O 3 solar-blind photodetectors are reported. β-Ga 2 O 3 is a promising material for solar-blind photodetectors due to its large bandgap and the availability of low defect-density melt-grown substrates. In this work, structures are introduced that employ high-permittivity dielectric/semiconductor heterojunctions to enhance the performance of a Schottky photodetector. It is shown that integrating the high-k dielectric BaTiO 3 reduces the dark current by ≈10 4 , all but eliminates illumination induced Schottky barrier lowering, and increases the UV–vis rejection ratio by a factor greater than 9 × 10 3 compared to a Schottky photodetector. It is hypothesized that the high permittivity of the dielectric overcomes the influence of self-trapped holes in Ga 2 O 3 to reduce the peak electric field at the dielectric/metal interface, thereby eliminating the effects of Schottky barrier lowering on illuminated β-Ga 2 O 3 photodetectors. Additionally, it is hypothesized that the increase in the UV–vis rejection ratio is caused by the “dead layer” that forms at the BaTiO 3 /Pt interface.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications

We experimentally demonstrate a low-cost transfer process of GeSn ribbons to insulating substrates for short-wave infrared (SWIR) sensing/imaging applications. By releasing the original compressive GeSn layer to nearly fully relaxed state GeSn ribbons, the room-temperature spectral response of the photodetector is further extended to 3.2 μm, which can cover the entire SWIR range. Compared with the as-grown GeSn reference photodetectors, the fabricated GeSn ribbon photodetectors have a fivefold improvement in the light-to-dark current ratio, which can improve the detectivity for high-performance photodetection. The transient performance of a GeSn ribbon photodetector is investigated with a rise time of about 40 μs, which exceeds the response time of most GeSn (Ge)-related devices. In addition, this transfer process can be applied on various substrates, making it a versatile technology that can be used for various applications ranging from optoelectronics to large-area electronics. These results provide insightful guidance for the development of low-cost and high-speed SWIR photodetectors based on Sn-containing group IV low-dimensional structures.

42 ENGINEERING↗
DOE OSTI2024

Device response principles and the impact on energy resolution of epitaxial quantum dot scintillators with monolithic photodetector integration

Abstract Epitaxial quantum dot (QD) scintillator crystals with picosecond-scale timing and high light yield have been created for medical imaging, high energy physics and national security applications. Monolithic photodetector (PD) integration enables the sensing of photons generated within the waveguiding crystal and allows a wide range of scintillator-photodetector coupling geometries. Until recently, these doubly novel devices have suffered from complex, high variance responses to monoenergetic sources which significantly reduces their precision and accuracy. The principles governing the overall device response have now been discerned and embodied by an expression derived within a geometrical optics framework which considers optical properties, surface roughness and photodetector coupling geometry. Response variation due to these factors was sufficiently reduced to obtain material-related energy resolution values of 2.4% with alpha particles. These findings place energy resolution alongside luminescence timescale, photon yield, and radiation hardness as outstanding properties of these engineered materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Uncooled GeSn MWIR Photodetectors Using Fully Relaxed Thin Triple‐Step Buffer

GeSn photodetectors monolithically grown on Ge virtual substrates demonstrate mid-wave infrared (MWIR) detection at room temperature. The lattice mismatch between GeSn and Ge causes dislocations and compressive strain, creating leakage pathways and unwanted indirect band transitions. Designed thin Ge 0.91 Sn 0.09 triple-step buffer layers of ≈175 nm total thickness reduce dislocations and enable full relaxation, showing 100% lattice relaxation and smooth surface roughness of 0.83 nm with shorter auto-correlation length in surface morphology compared to single-step buffers. Ge 1-x Sn x photodetectors (x = 0.09, 0.12, and 0.15) on triple-step buffers with n-i-p configurations achieve lattice strain relaxations of 99%, 88%, and 80%, respectively. Ge 0.91 Sn 0.09 and Ge 0.88 Sn 0.12 show gradual variation in auto-correlation amplitude, while Ge 0.85 Sn 0.15 shows an increase due to lattice mismatch. Shockley–Read–Hall recombination current dominates at low reverse bias due to mismatch-induced dislocations, while band-to-band tunneling current dominates at higher reverse bias due to narrowing bandgap under strong electric fields. Here, the photodetectors show extended spectral response with increasing Sn composition of i-GeSn active layer sandwiched by barriers. Ge 0.88 Sn 0.12 and Ge 0.85 Sn 0.15 exhibit extended wavelength cut-offs of 3.12 and 3.27 µm at room temperature, demonstrating significant potential for silicon-based MWIR applications.

GeSn↗
DOE OSTI2026

Highly Responsive Near-Infrared Photodetector Based on Contactless PdSe 2 Integration with a Few-Layered MoSe 2 Field-Effect Transistor

Two-dimensional (2D) semiconductors with narrow bandgaps are promising candidates for near- and far-infrared (IR) photodetection, particularly in the telecommunication spectral window. However, current low-bandgap IR photodetectors face significant challenges due to their high dark current, increased carrier recombination, and thermally generated noise. Here, in this work, a hybrid phototransistor is demonstrated by integrating direct, contact-free palladium diselenide (PdSe 2 ) as a highly responsive IR detection layer with a non-IR-absorbing molybdenum diselenide (MoSe 2 ) field-effect transistor (FET), using a near-IR source at a wavelength of λ = 1650 nm. Exfoliated PdSe 2 flakes integrated into a back-gated FET architecture exhibit ambipolar transport behavior, with extracted hole and electron mobilities of 24.8 cm 2 V –1 s –1 and 58.4 cm 2 V –1 s –1 , respectively. The devices show a clear photocurrent generation under the illumination of a λ = 1650 nm laser source, achieving a notable responsivity of ∼300 mA W -1 at an applied gate voltage of 15 V, which highlights the suitability of PdSe 2 as a narrow-bandgap material for photodetection. Photoresponsivity saturates and does not have any effect above an applied gate voltage of 15 V. To further tune the photoresponsivity performance continuously with the applied gate voltage, we construct a van der Waals heterostructure phototransistor, where few layers of PdSe 2 are directly transferred onto the 2D channel region of a MoSe 2 FET, while avoiding any contact with the metal electrodes. In this heterostructure, PdSe 2 works as the primary active IR-absorbing layer, while MoSe 2 provides high-performance FET characteristics. This spatial separation of absorption and transport facilitates efficient interlayer charge transfer and charge separation, resulting in high responsivities of up to 972 mA W –1 at near-IR wavelengths and a low power density of 1.5 mW/mm 2 . The responsivity of our photodetector is comparable to that of some state-of-the-art commercially available NIR photodetectors, highlighting the potential of PdSe 2 -based heterostructures as scalable, CMOS-compatible platforms for high-performance near-IR detection.

Infrared (IR) photodetectors↗
DOE OSTI2024

Octupole moment driven free charge generation in partially chlorinated subphthalocyanine for planar heterojunction organic photodetectors

In this study, high-performance organic photodetectors are presented which utilize a pristine chlorinated subphthalocyanine photoactive layer. Optical and optoelectronic analyses indicate that the device photocurrent is primarily generated through direct charge generation within the chlorinated subphthalocyanine layer, rather than exciton separation at layer interfaces. Molecular modelling suggests that this direct charge generation is facilitated by chlorinated subphthalocyanine high octupole moment (-80 DÅ 2 ), which generates a 200 meV shift in molecular energetics. Increasing the thickness of chlorinated subphthalocyanine leads to faster response time, correlated with a decrease in trap density. Notably, photodetectors with a 50 nm thick chlorinated subphthalocyanine photoactive layer exhibit detectivities approaching 10 13 Jones, with a dark current below 10 -7 A cm -2 up to -5 V. Based on these findings, we conclude that high octupole moment molecular semiconductors are promising materials for high-performance organic photodetectors employing single-component photoactive layer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Broadband Infrared Carbon Nanotube Linear Photodetector Arrays

Carbon nanotubes (CNTs) possess exceptional optoelectronic properties, including broadband absorption and high absorption coefficients, making them promising candidates for photodetector applications. However, conventional designs often rely on single or aligned nanotubes, which restrict device scalability and require complex fabrication techniques. Here, in this work, we address these limitations by utilizing CNT-suspended solutions to fabricate large-area photodetectors based on CNT networks via vacuum filtration and direct laser scribing. CNT networks are uniformly formed onto low-thermal-conductance polymeric filter papers that serve as substrates and mitigate the need for suspended structures, reducing the fabrication complexity and cost. The CNT films are patterned into single devices and 49-pixel linear arrays by using a laser-cutting process, enabling scalable and cost-effective production. The resulting devices operate as bolometers and exhibit broad spectral sensitivity extending from visible to midwave infrared, showing stable operation at room temperature. We further demonstrate proof-of-concept IR imaging using linear arrays.

IR imaging↗
DOE OSTI2025

Large‐Scale 2D Perovskite Nanocrystals Photodetector Array via Ultrasonic Spray Synthesis

Abstract 2D perovskite (PVSK) single crystals have received significant attention due to their unique optical and optoelectronic properties. However, current synthesis methods face limitations, particularly in large‐area fabrication, which remain critical barriers to practical applications. In this study, the synthesis of red/green/purple‐blue‐colored 2D PVSK nanocrystals over a large area (4‐inch wafer) and the fabrication of high‐performance photodetector arrays are presented via a facile yet efficient spray‐coating approach with a liquid‐bridge transport effect. The photodetector array achieves 100% working yield, high photo‐responsivity (1.5 × 10 6 A W −1 ) and specific‐detectivity (1.1 × 10 16 Jones) with competitive photomapping characteristics. An intelligent vision system for automatic shape recognition is further demonstrated with a recognition rate exceeding 90%. This study provides significant advances in the scalable synthesis of nanoscale 2D PVSK crystals, their integration into large‐area optoelectronic devices, and their potential use in artificial‐intelligence systems.

Lee, Yoon Ho [Davidson School of Chemical Engineer↗
DOE OSTI2025

Initial assessment of second generation of large-area picosecond photodetectors with multi-channel systems-on-a-chip readout

Here, we first briefly describe the history and motivation behind Cherenkov and scintillation light detection. We then discuss the instrumentation needed to detect these photons as it applies to both photodetectors and readout electronics. One of the motivations is future large neutrino detectors that could, in principle, differentiate between Cherenkov and scintillation light if using novel water-based scintillators. In this paper, we present the first measurements utilizing the second generation of Large Area Picosecond Photodetectors (LAPPDs) in conjunction with commercial system-on-a-chip readouts from Nalu Scientific—in particular, the High Density System on Chip (HDSoC) and Advanced ASoC Rapid Digitizer, Variable Adaptive Readout Chip (AARDVARC) platforms. These state-of-the-art full-waveform digitizers feature sampling rates on the order of 1 and 10 samples per nanosecond, respectively. Using a picosecond laser, we measured the timing jitter between a pair of LAPPD channels, demonstrating the potential of this setup for precise timing applications.

Li, V. A. [Lawrence Livermore National Laboratory ↗
DOE OSTI2025

Understanding the optoelectronic properties of doped 2D organic-inorganic halide perovskite quantum wells: towards efficient quantum well IR photodetectors

Metal halide perovskite (MHP) multiple quantum wells which consist of multilayers of alternate organic and inorganic layers exhibit large exciton binding energies due to the dielectric confinement between the inorganic and organic layers. These naturally formed multiple quantum wells have strong spin-orbit coupling (SOC) due to the presence of heavy elements in their crystal structures. Although the fundamental properties of 2D MHPs are far from being entirely understood, it is widely accepted that their band edge absorption coefficient results from strong exciton interactions. However, studies demonstrating how different exciton interactions and doping effects influence electronic traps and disorder on the band edge absorption coefficient of 2D MHPs have not been demonstrated. Understanding these interactions in MHPs will allow us to access low energy optical transitions for the fabrication of solution processable short-to-mid-wavelength IR photodetectors (1 – 8 μm). Moreover, upon doping, it is possible to move the Fermi energy into the conduction band (CB) to favorably promote the transport of charges in a working device. Herein, we study the development of 2D MHPs having strong SOC, high carrier mobility, and tunable quantum well structures. Our studies shed light on the design and modulation of fundamental physical phenomena by carefully elucidating the role of dopants (n-type and p-type), exciton heterogeneity, orientation, structure, and bias stress effects on the performance of MHPs as potential IR photodetectors.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Neutrino Interactions observed with Large Area Picosecond Photodetectors in ANNIE

The Accelerator Neutrino Neutron Interaction Experiment (ANNIE) is a 26-ton water-based neutrino detector located at Fermilab, approximately 110 m downstream of the Booster Neutrino Beam (BNB). ANNIE utilizes both photomultiplier tubes (PMTs) and advanced photodetectors, specifically Large Area Picosecond Photodetectors (LAPPDs), to detect Cherenkov light emitted by leptons produced in neutrino interactions within ANNIE. LAPPDs are a novel technology designed to detect photons with picosecond-level temporal resolution and sub-millimetre spatial precision. Multiple LAPPDs have been deployed in the ANNIE detector. This is the first use of this technology in a running particle physics experiment and has yielded the first detection of light from neutrino interactions in water with LAPPDs. In this poster, I will showcase the operational performance and functionality of LAPPDs in the ANNIE experiment. Neutrino beam data from the BNB is used to evaluate the timing precision, hit reconstruction performance, and beam response of deployed LAPPDs, demonstrating how this novel picosecond-resolution technology performs in a running neutrino water Cherenkov detector. This work highlights the successful integration of LAPPDs in ANNIE and provides quantitative benchmarks that inform their application in future neutrino experiments requiring high-resolution photon detection.

Aman, Mohammad Adil [Florida State U.] (ORCID:0009↗
DOE OSTI2026

Characterization of lateral amorphous selenium photodetectors for low-photon and VUV detection at cryogenic temperatures

The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the response of a-Se detectors to low-photon fluxes at high electric fields near avalanche conditions, the linearity of the photoconductive response over a wide dynamic range and the direct detection of narrowband 130 nm vacuum ultraviolet (VUV) illumination. At 87 K, matched-filter analysis shows reliable single-shot detection with efficiencies ≥80% and area under the curve (AUC) ≥ 0.85 using as few as ∼ 6800 incident 401 nm photons, corresponding to ∼ 3400 photons within field-active regions after accounting for geometric constraints. Measurements are performed at cryogenic temperatures using calibrated photon fluxes derived from a silicon photomultiplier reference and a characterized optical filter stack. Additional experiments using a tellurium-doped a-Se (a-SeTe) device explore the material's behavior under identical test conditions and demonstrate that avalanche is achievable in a-SeTe at cryogenic temperatures. The results demonstrate reproducible low-noise operation, VUV sensitivity and field-dependent gain behavior in a lateral a-Se architecture, representing the first reported observation of avalanche multiplication in laterally structured a-Se and a-SeTe devices at cryogenic temperatures. These findings support the potential integration of laterally structured a-Se devices into next-generation pixelated liquid-argon time projection chambers (TPCs) requiring scalable, high-field-compatible photon detection systems.

Amorphous selenium↗
DOE OSTI2024

Design and Performance of an InAs Quantum Dot Scintillator with Integrated Photodetector

A new scintillation material composed of InAs quantum dots (QDs) hosted within a GaAs matrix was developed, and its performance with different types of radiation is evaluated. A methodology for designing an integrated photodetector (PD) with a low defect density and that is optically matched to the QD’s emission spectrum is introduced, utilizing an engineered epitaxial InAlGaAs metamorphic buffer layer. The photoluminescence (PL) collection efficiency of the integrated PD is examined using two-dimensional scanning laser excitation. The detector response to 5.5 MeV α-particles and 122 keV photons is presented. Yields of 13 electrons/keV for α-particles and 30–60 electrons/keV for photons were observed. The energy resolution of 12% observed with α-particles was mainly limited by noise- and geometry-related optical losses. The radiation hardness of an InAs QDs hosted within GaAs and a wider band gap AlGaAs ternary alloy was studied under a 1 MeV proton implantation up to a 10 14 cm –2 dose. The integrated PL responses were compared to evaluate PL quenching due to non-radiative defects. The QDs embedded in the AlGaAs demonstrated improved radiation hardness compared to QDs in the GaAs matrix and in the InGaAs quantum wells.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ultra‐Flexible Pixelated Perovskite Photodetectors Enabled by Honeycomb Polymer Grids for High‐Resolution Imaging

Abstract A nature‐inspired fabrication method based on a photolithography‐free flexible polymer grid is reported for high‐resolution pixelation of perovskite photodiode arrays with exceptional mechanical ductility and a morphology resembling that of natural compound eyes. The resulting pixelated perovskite photosensitive layer has a ≈1 µm pixel size with 2000 Pixels per inch (PPI) resolution when fully assembled as a photodetector array, delivering a detectivity of >10 13 Jones while providing cross‐talk free imaging. Using a polymer grid effectively releases stress on the perovskite platform, greatly increasing the mechanical agility of the otherwise brittle perovskite film. This novel fabrication methodology and device design offer new possibilities for applications in robotics, biomedical imaging, and virtual and augmented reality.

Zheng, Ding [Department of Chemistry and the Mater↗
DOE OSTI2026

Two-Dimensional Perovskite Single-Nanowire Photodetectors

High-performance microphotodetectors require materials that combine strong light–matter interaction, fast charge transport, and ambient stability. Here, we demonstrate single-nanowire devices based on the 2D perovskite (TPA3) 2 PbBr 4 , synthesized via a controlled slow-cooling self-assembly process that yields defect-minimized, anisotropic nanowires with smooth facets. These microphotodetectors exhibit ultralow dark currents (∼10 –15 A), high responsivity (up to 156 mA W –1 ), and exceptional specific detectivity (∼10 11 Jones) under near-UV (405 nm) illumination, with rise and fall times in the millisecond regime. The superior detectivity is primarily driven by the suppression of thermal noise through the material’s ultralow dark current, while the millisecond temporal response is governed by high-intensity trap-filling dynamics. The devices maintain stable operation over 4000 s of continuous on/off cycling and show remarkable ambient stability over weeks, attributed to dense crystal packing and robust organic cation layers. Furthermore, the influence of nanowire thickness on the charge collection efficiency is systematically elucidated through optical penetration depth analysis, highlighting design principles for optimizing low-dimensional perovskite photodetectors. This study introduces single 2D perovskite nanowires as a versatile platform for miniaturized, high-performance optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

A butterfly-shaped acceptor with rigid skeleton and unique assembly enables both efficient organic photovoltaics and high-speed organic photodetectors

ABSTRACT It remains challenging to design efficient bifunctional semiconductor materials in organic photovoltaic and photodetector devices. Here, we report a butterfly-shaped molecule, named WD-6, which exhibits low energy disorder and small reorganization energy due to its enhanced molecular rigidity and unique assembly with strong intermolecular interaction. The binary photovoltaic device based on PM6:WD-6 achieved an efficiency of 18.41%. Notably, an efficiency of 19.42% was achieved for the ternary device based on PM6:BTP-eC9:WD-6. Moreover, the photodetection device based on WD-6 demonstrated an ultrafast response speed (205 ns response time at λ of 820 nm) and a high cutoff frequency of −3 dB (2.45 MHz), surpassing the values of most commercial Si photodiodes. Based on these findings, we showcased an application of the WD-6-based photodetection device in high-speed optical communication. These results offer valuable insights into the design of organic semiconductor materials capable of simultaneously exhibiting high photovoltaic and photodetective performance.

Science & Technology - Other Topics↗
DOE OSTI2025

Understanding the optoelectronic properties of doped 2D organic-inorganic halide perovskite quantum wells: towards efficient ultrafast quantum well IR photodetectors

This project, titled “Understanding the optoelectronic properties of doped 2D organic-inorganic halide perovskite quantum wells: towards efficient quantum well IR photodetectors”, was funded by the U.S. Department of Energy to explore a new class of materials that could make future light-sensing technologies, such as infrared (IR) cameras and detectors more efficient, affordable, and widely available. The research focused on special layered materials called 2D halide perovskites, which are made up of alternating organic and inorganic layers only a few atoms thick. These materials can be tuned at the atomic level to absorb and emit light in precise ways, making them very attractive for use in optoelectronic devices. The main goal of the project was to understand how these perovskite materials absorb light and move electrical charges at very small scales. However, this is not an easy task. These materials often contain a mixture of different structures in the same film, and traditional tools like regular absorption or photoluminescence spectroscopy are not good at telling those structures apart. To solve this, the research team, led by Professor Luisa Whittaker-Brooks at the University of Utah developed a powerful method called electroabsorption spectroscopy. This technique uses electric fields to highlight the unique “fingerprints” of different excitons, which are tiny packets of energy formed when light hits the material. By using this method, the team could separate overlapping signals and learn exactly how the materials respond to light under different conditions, including changes in temperature, thickness, and chemical makeup.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Characterization of Lateral Amorphous Selenium Photodetectors for Low-Photon and VUV Detection at Cryogenic Temperatures

The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the response of a-Se detectors to low-photon fluxes at high electric fields near avalanche conditions, the linearity of the photoconductive response over a wide dynamic range and the direct detection of narrowband 130 nm vacuum ultraviolet (VUV) illumination. At 87 K, matched-filter analysis shows reliable single-shot detection with efficiencies greater than or equal to 80 percent and area under the curve (AUC) greater than or equal to 0.85 using as few as approximately 6800 incident 401 nm photons, corresponding to approximately 3400 photons within field-active regions after accounting for geometric constraints. Measurements are performed at cryogenic temperatures using calibrated photon fluxes derived from a silicon photomultiplier reference and a characterized optical filter stack. Additional experiments using a tellurium-doped a-Se (a-SeTe) device explore the material's behavior under identical test conditions and demonstrate that avalanche is achievable in a-SeTe at cryogenic temperatures. The results demonstrate reproducible low-noise operation, VUV sensitivity and field-dependent gain behavior in a lateral a-Se architecture, representing the first reported observation of avalanche multiplication in laterally structured a-Se and a-SeTe devices at cryogenic temperatures. These findings support the potential integration of laterally structured a-Se devices into next-generation pixelated liquid-argon time projection chambers (TPCs) requiring scalable, high-field-compatible photon detection systems.

FOS: Physical sciences↗