Effects of Nb doping level on the electronic transport, photoelectric effect and magnetoresistance across La{sub 0.5}Ca{sub 0.5}MnO{sub 3}/Nb:SrTiO{sub 3} junctions
Heterojunctions composed of La{sub 0.5}Ca{sub 0.5}MnO{sub 3} and Nb doped SrTiO{sub 3} were fabricated, and the effects of the Nb doping level on their electronic transport, photoelectric effect, and magnetoresistance were investigated. A lower doping concentration of Nb led to better rectifying properties and higher open circuit voltages. The I-V curves for La{sub 0.5}Ca{sub 0.5}MnO{sub 3}/0.7 wt. % Nb-SrTiO{sub 3} showed a negligible response to magnetic fields for all temperatures, whereas La{sub 0.5}Ca{sub 0.5}MnO{sub 3}/0.05 wt. % Nb-SrTiO{sub 3} exhibited distinct magnetoresistance, which depended on both the bias voltage and temperature. These results are discussed with the assistance of conventional semiconductor theories.