Search NASA⌕ Search

SEARCH · Search NASA

Results for “PHOTOVOLTAICS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records

Physics of grain boundaries in polycrystalline photovoltaic semiconductors

Thin-film solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can be chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.

36 MATERIALS SCIENCE↗

Compendium of photovoltaic degradation rates

Abstract Published data on photovoltaic (PV) degradation measurements were aggregated and re‐examined. The subject has seen an increased interest in recent years resulting in more than 11 000 degradation rates in almost 200 studies from 40 different countries. As studies have grown in number and size, we found an impact from sampling bias attributable to size and accuracy. Because of the correlational nature of this study we examined the data in several ways to minimize this bias. We found median degradation for x‐Si technologies in the 0.5–0.6%/year range with the mean in the 0.8–0.9%/year range. Hetero‐interface technology (HIT) and microcrystalline silicon (µc‐Si) technologies, although not as plentiful, exhibit degradation around 1%/year and resemble thin‐film products more closely than x‐Si. Several studies showing low degradation for copper indium gallium selenide (CIGS) have emerged. Higher degradation for cadmium telluride (CdTe) has been reported, but these findings could reflect a convolution of less accurate studies and longer stabilization periods for some products. Significant deviations for beginning‐of‐life measurements with respect to nameplate rating have been documented over the last 35 years. Therefore, degradation rates that use nameplate rating as reference may be significantly impacted. Studies that used nameplate rating as reference but used solar simulators showed less variation than similar studies using outdoor measurements, even when accounting for different climates. This could be associated with confounding effects of measurement uncertainty and soiling that take place outdoors. Hotter climates and mounting configurations that lead to sustained higher temperatures may lead to higher degradation in some, but not all, products. Wear‐out non‐linearities for the worst performing modules have been documented in a few select studies that took multiple measurements of an ensemble of modules during the lifetime of the system. However, the majority of these modules exhibit a fairly linear decline. Modeling these non‐linearities, whether they occur at the beginning‐of‐life or end‐of‐life in the PV life cycle, has an important impact on the levelized cost of energy. Copyright © 2016 John Wiley & Sons, Ltd.

Jordan, Dirk C.↗

Using Measured Plane-of-Array Data Directly in Photovoltaic Modeling: Methodology and Validation

Measured plane-of-array (POA) irradiance may provide a lower-cost alternative to standard irradiance component data for photovoltaic (PV) system performance modeling without loss of accuracy. Previous work has shown that transposition models typically used by PV models to calculate POA irradiance from horizontal data introduce error into the POA irradiance estimates, and that measured POA data can correlate better to measured performance data. However, popular PV modeling tools historically have not directly used input POA data. This paper introduces a new capability in NREL's System Advisor Model (SAM) to directly use POA data in PV modeling, and compares SAM results from both POA irradiance and irradiance components inputs against measured performance data for eight operating PV systems.

14 SOLAR ENERGY↗

New Type of 2D Perovskites with Alternating Cations in the Interlayer Space, (C(NH 2 ) 3 )(CH 3 NH 3 ) n Pb n I 3 n +1 : Structure, Properties, and Photovoltaic Performance

In this study, we present the new homologous series (C(NH 2 ) 3 )(CH 3 NH 3 ) n Pb n I3 n+1 (n = 1, 2, 3) of layered 2D perovskites. Structural characterization by single-crystal X-ray diffraction reveals that these compounds adopt an unprecedented structure type, which is stabilized by the alternating ordering of the guanidinium and methylammonium cations in the interlayer space (ACI). Compared to the more common Ruddlesden–Popper (RP) 2D perovskites, the ACI perovskites have a different stacking motif and adopt a higher crystal symmetry. The higher symmetry of the ACI perovskites is expressed in their physical properties, which show a characteristic decrease of the bandgap with respect to their RP perovskite counterparts with the same perovskite layer thickness (n). The compounds show a monotonic decrease in the optical gap as n increases: E g = 2.27 eV for n = 1 to E g = 1.99 eV for n = 2 and E g = 1.73 eV for n = 3, which show slightly narrower gaps compared to the corresponding RP perovskites. First-principles theoretical electronic structure calculations confirm the experimental optical gap trends suggesting that the ACI perovskites are direct bandgap semiconductors with wide valence and conduction bandwidths. To assess the potential of the ACI perovskites toward solar cell applications, we studied the (C(NH 2 ) 3 )(CH 3 NH 3 ) 3 Pb 3 I 10 (n = 3) compound. Compact thin films from the (C(NH 2 ) 3 )(CH 3 NH 3 ) 3 Pb 3 I 10 compound with excellent surface coverage can be obtained from the antisolvent dripping method. Planar photovoltaic devices from optimized ACI perovskite films yield a power-conversion-efficiency of 7.26% with a high open-circuit voltage of ~1 V and a striking fill factor of ~80%.

14 SOLAR ENERGY↗

Charge-carrier dynamics in polycrystalline thin-film CuIn{sub 1−x}Ga{sub x}Se{sub 2} photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn{sub 1−x}Ga{sub x}Se{sub 2} (with x ≈ 0.3) as 22 ± 2 cm{sup 2}(Vs){sup −1}. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Photovoltaic Inverter Momentary Cessation: Recovery Process is Key

Momentary cessation refers to an inverter control mode. When the inverter terminal voltage falls below (or exceeds) a certain level, the inverter ceases to output any current, but attempts to maintain (or quickly regain) phase-locked loop synchronization to allow for quick reinjection of current when the voltage recovers to a certain point. This paper presents a photovoltaic (PV) momentary cessation model developed in PSS/E. Simulations are presented for a high voltage transmission line fault contingency in the Hawaiian island of Oahu power system on a validated PSS/E model, modified to include a custom distributed PV inverter model, and different near-future distributed PV penetration levels. Simulations for the island power system include different penetration levels of PV, and different recovery times (ramp rates and delays) after momentary cessation. The results indicate that during low voltage events, such as faults, momentary cessation can produce severe under frequency events, causing significant load shed and shortly thereafter, in some cases, over frequency events that cause generation to trip offline. The problem is exacerbated with higher penetration levels of PV. If momentary cessation is used (as is typically the case for distribution-connected resources), the recovery process after momentary cessation should be carefully considered to minimize impacts to bulk power system stability.

14 SOLAR ENERGY↗

Effects of Photovoltaic Module Materials and Design on Module Deformation Under Load

Static structural finite element models of an aluminum-framed crystalline silicon (c-Si) photovoltaic (PV) module and a glass-glass thin film PV module were constructed and validated against experimental measurements of deflection under uniform pressure loading. Parametric analyses using Latin Hypercube Sampling (LHS) were performed to propagate simulation input uncertainties related to module material properties, dimensions, and manufacturing tolerances into expected uncertainties in simulated deflection predictions. This exercise verifies the applicability and validity of finite element modeling for predicting mechanical behavior of solar modules across architectures and enables computational models to be used with greater confidence in assessment of module mechanical stressors and design for reliability. Sensitivity analyses were also performed on the uncertainty quantification data sets using linear correlation coefficients to elucidate the key parameters influencing module deformation. This information has implications on which materials or parameters may be optimized to best increase module stiffness and reliability, whether the key optimization parameters change with module architecture or loading magnitudes, and whether parameters such as frame design and racking must be replicated in reduced-scale reliability studies to adequately capture full module mechanical behavior.

14 SOLAR ENERGY↗

Photovoltaic power generation system with photovoltaic cells as bypass diodes

A photovoltaic power generation system that includes a solar panel is described herein. The solar panel includes a photovoltaic sub-module, which includes a group of microsystem enabled photovoltaic cells. The group includes a first string of photovoltaic cells, a second string of photovoltaic cells, and a differing photovoltaic cell. Photovoltaic cells in the first string are electrically connected in series, and photovoltaic cells in the second string are electrically connected in series. Further, the first string of photovoltaic cells, the second string of photovoltaic cells, and the differing photovoltaic cell are electrically connected in parallel. Moreover, the differing photovoltaic cell is used as a bypass diode for the first string of photovoltaic cells and the second string of photovoltaic cells.

14 SOLAR ENERGY↗

Nanoscale excitonic photovoltaic mechanism in ferroelectric BiFeO 3 thin films [Nanoscale excitonic mechanism underlying the bulk photovoltaic effect in ferroelectric BiFeO 3 thin films]

We report an electrode-free photovoltaic experiment in epitaxial BiFeO 3 thin films where the picosecond optical absorption arising from carrier dynamics and piezoelectric lattice distortion due to the photovoltaic field are correlated at nanoscale. The data strongly suggest that the photovoltaic effect in phase-pure BiFeO 3 originates from diffusion of charge-neutral excitons and their subsequent dissociation localized at sample interfaces. This is in stark contrast to the belief that carrier separation is uniform within the sample due to the lack of center of symmetry in BiFeO 3 . As a result, this finding is important for formulating strategies in designing practical photovoltaic ferroelectric devices.

36 MATERIALS SCIENCE↗

Doping CdSexTe1-x/CdTe Graded Absorber Films with Arsenic for Thin-Film Photovoltaics

CdTe thin-film photovoltaics have demonstrated some of the lowest costs of electricity generation owing to its low material cost and ease of manufacturing. However, the full potential of polycrystalline CdTe photovoltaics can only be realized if the open-circuit voltage can be increased beyond 1 V Open-circuit voltage ~850-900 mV has been consistently observed for state-of-the-art polycrystalline CdTe solar cells. Open-circuit voltage of over 1V has been demonstrated for single crystal CdTe devices by doping with Group V elements. Therefore, this study is aimed at understanding behavior of polycrystalline CdTe devices with arsenic doping, its activation and process and performance optimization in order to overcome current voltage limitations in CdTe solar cells.

14 SOLAR ENERGY↗

Operation and Control of Soft Switching Solid State Transformer as a Virtual Synchronous Machine for Photovoltaic Application

Possibility for control and operation of a three-phase solid state soft switching transformer based as a virtual synchronous machine or synchronverter has been investigated in this paper. The soft switching solid state transformer is used as an interface between the ac grid and a photovoltaic power generation unit supported by a battery bank. The control architecture investigated in this paper is that of a synchronverter to achieve inertial support to the grid and local loads. The operation of the soft switching solid state transformer has also been investigated as a V S M during unbalanced/distorted grid voltage condition. Control objective to achieve oscillation free power transfer between the ports (photovoltaic, battery and grid) has been achieved. The presented architecture has been verified for several important case studies via numerical simulations based on MATLAB/Simulink domain.

grid current controller↗