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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Impact of Point Defects on Electronic Structure in Y₂Ti₂O₇

With many technologies and applications downscaling to nanometer dimensions, the influence of single point defects on electronic structure has shown an increasingly profound impact on optical and electrical properties, and advancing fundamental understanding is critical to defect engineering and control of materials properties. In the present study, first-principles calculations based on density functional theory (DFT) are carried out to study the effects of Ti point defects on the electronic structure of Y₂Ti₂O₇. In the literature, it has been demonstrated that conventional DFT tends to produce delocalized holes and electrons in defective oxide materials due to insufficient cancellation of the self-interaction energy and underestimation of the band gap, which results in an incorrect description of the electronic structure of the system. In an effort to better understand the accuracy of DFT in describing the behavior of Y₂Ti₂O₇ with point defects, the calculated results obtained from DFT and DFT+U methods are compared, including the geometrical distortion, the localization of the defect states and the position of the defect levels in the band gap. Using DFT, distorted geometries around the Ti vacancy and interstitial are found, along with localized oxygen holes and Ti electrons, both of which compare well with the DFT+U results, suggesting that the conventional DFT can be used to describe the localization of the Ti defects in Y₂Ti₂O₇. One major difference in the DFT and DFT+U calculations is the energy position of the defect levels, for which DFT+U results in the states positioned deep in the band gap. Since the DFT+U method suffers from the dependence of the results on the empirical parameter U and no experimental results on the energy position of the defect states are available to tune this U value, care must be taken in applying DFT+U to electronic structure calculations of Y₂Ti₂O₇ with point defects. Based on the DFT method, the most preferred charge state is determined by the formation energies for charged point defects. Moving the Fermi level across the band gap has slight effects on the charge state, and the Ti vacancy and interstitial are found to be in 24 and +4 charge states, respectively.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2018

Identification of a functional point defect in SrTi O 3

Unveiling both the presence and nature of point defects is one of the biggest challenges in condensed matter physics and materials science. Particularly in complex oxides, even a minute amount of unavoidable point defects could generate novel physical phenomena and functions, such as visible light emission and ferroelectricity, yet it remains elusive to clearly identify such point defects. Here, taking SrTiO3 as a model system, we show that iterative feedback among atomic-layer- and stoichiometry-controlled thin-film epitaxy, hybrid density functional theory, and high-resolution cathodoluminescence spectroscopy allows for the identification of a functional cationic defect, the Ti antisite (TiSr) defect. Our cathodoluminescence measurements reveal sub-band-gap luminescence, whose spectral fine structures show excellent quantitative agreement, as well as a one-to-one correspondence, with the theoretically predicted optical transitions from intrinsic point defects such as TiSr. Guided by the theory and spectroscopic results, we also control a cation stoichiometry, and it in turn results in good systematics in cathodoluminescence spectra. Not limited to the identification of TiSr, this approach allows for more reliable, self-consistent defect study, and provides critical insight into a microscopic picture of point defects in complex oxides.

Lee, Daesu↗
DOE OSTI2012

Mechanism for recombination of radiation-induced point defects at interphase boundaries

MD studies of collision cascades in KS-type Cu-Nb interfaces are performed, revealing that Cu interstitials are preferentially loaded into the interface while on the bcc Nb side there is very little absorption of interstitials. The interstitial loading effect at two types of heterogeneous Cu-Nb interfaces, both KS-type and SPD {l_brace}112{r_brace}-type interfaces is studied: (a) The Cu interstitials are observed to spontaneously emit from both types of interfaces to annihilate vacancies in the nearby bulk, (b) MD and NEB studies are used to characterize low barrier emission processes. Our study also indicates that interstitials do not lose their identity when absorbed even at interfaces where they become significantly delocalized.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Point defects in Cu 2 ZnSnSe 4 (CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition: Point defects in Cu 2 ZnSnSe 4 (CZTSe)

The interest in Cu2ZnSn(S,Se)4 (CZTS) for photovoltaic applications is motivated by similarities to Cu(In,Ga)Se2 while being comprised of non-toxic and earth abundant elements. However, CZTS suffers from a Voc deficit, where the Voc is much lower than expected based on the band gap, which may be the result of a high concentration of point-defects in the CZTS lattice. Recently, reports have observed a low-temperature order/disorder transition by Raman and optical spectroscopies in CZTS films and is reported to describe the ordering of Cu and Zn atoms in the CZTS crystal structure. To directly determine the level of Cu/Zn ordering, we have used resonant-XRD, a site, and element specific probe of long range order. We used CZTSe films annealed just below and quenched from just above the transition temperature; based on previous work, the Cu and Zn should be ordered and highly disordered, respectively. Our data show that there is some Cu/Zn ordering near the low temperature transition but significantly less than high chemical order expected from Raman. To understand both our resonant-XRD results and the Raman results, we present a structural model that involves antiphase domain boundaries and accommodates the excess Zn within the CZTS lattice.

14 SOLAR ENERGY↗
DOE OSTI2021

Unusual Role of Point Defects in Perovskite Nickelate Electrocatalysts

Low-cost transition-metal oxide is regarded as a promising electrocatalyst family for an oxygen evolution reaction (OER). The classic design principle for an oxide electrocatalyst believes that point defect engineering, such as oxygen vacancies (VO .. ) or heteroatom doping, offers the opportunities to manipulate the electronic structure of material toward optimal OER activity. Oppositely, in this work, we discover a counterintuitive phenomenon that both VO .. and an aliovalent dopant (i.e., proton (H + )) in perovskite nickelate (i.e., NdNiO 3 (NNO)) have a considerably detrimental effect on intrinsic OER performance. Detailed characterizations unveil that the introduction of these point defects leads to a decrease in the oxidative state of Ni and weakens Ni-O orbital hybridization, which triggers the local electron-electron correlation and a more insulating state. Evidenced by first-principles calculation using the density functional theory (DFT) method, the OER on nickelate electrocatalysts follows the lattice oxygen mechanism (LOM). The incorporation of point defect increases the energy barrier of transformation from OO*(V O ) to OH*(V O ) intermediates, which is regarded as the rate-determining step (RDS). Furthermore, this work offers a new and significant perspective of the role that lattice defects play in the OER process.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Identification and Suppression of Point Defects in Bromide Perovskite Single Crystals Enabling Gamma‐Ray Spectroscopy

Abstract Methylammonium lead tribromide (MAPbBr 3 ) stands out as the most easily grown wide‐band‐gap metal halide perovskite. It is a promising semiconductor for room‐temperature gamma‐ray ( γ ‐ray) spectroscopic detectors, but no operational devices are realized. This can be largely attributed to a lack of understanding of point defects and their influence on detector performance. Here, through a combination of crystal growth design and defect characterization, including positron annihilation and impedance spectroscopy, the presence of specific point defects are identified and correlated to detector performance. Methylammonium (MA) vacancies, MA interstitials, and Pb vacancies are identified as the dominant charge‐trapping defects in MAPbBr 3 crystals, while Br vacancies caused doping. The addition of excess MABr reduces the MA and Br defects and so enables the detection of energy‐resolved γ ‐ray spectra using a MAPbBr 3 single‐crystal device. Interestingly, the addition of formamidinium (FA) cations, which converted to methylformamidinium (MFA) cations by reaction with MA + during crystal growth further reduced MA defects. This enabled an energy resolution of 3.9% for the 662 keV 137 Cs line using a low bias of 100 V. The work provides direction toward enabling further improvements in wide‐bandgap perovskite‐based device performance by reducing detrimental defects.

Ni, Zhenyi↗
DOE OSTI2015

Point defects in CdTe x Se 1-x crystals grown from a Te-rich solution for applications in detecting radiation

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Comprehensive characterization of irradiation induced defects in ceria: Impact of point defects on vibrational and optical properties

Validation of multiscale microstructure evolution models can be improved when standard microstructure characterization tools are coupled with methods sensitive to individual point defects. We demonstrate how electronic and vibrational properties of defects revealed by optical absorption and Raman spectroscopies can be used to compliment transmission electron microscopy (TEM) and x-ray diffraction (XRD) in the characterization of microstructure evolution in ceria under non-equilibrium conditions. Experimental manifestation of non-equilibrium conditions was realized by exposing cerium dioxide (CeO2) to energetic protons at elevated temperature. Two sintered polycrystalline CeO2 samples were bombarded with protons accelerated to a few MeVs. These irradiation conditions produced a microstructure with resolvable extended defects and a significant concentration of point defects. A rate theory (RT) model was parametrized using the results of TEM, XRD, and thermal conductivity measurements to infer point defect concentrations. An abundance of cerium sublattice defects suggested by the RT model is supported by Raman spectroscopy measurements, which show peak shift and broadening of the intrinsic T2g peak and emergence of new defect peaks. Additionally, spectroscopic ellipsometry measurements performed in lieu of optical absorption reveals the presence of Ce3+ ions associated with oxygen vacancies. This work lays the foundation for a coupled approach that considers a multimodal characterization of microstructures to guide and validate complex defect evolution models.

Chauhan, Vinay S.↗
DOE OSTI2019

Density functional theory study of the point defect energetics in y- LiAlO2, Li2ZrO3 and Li2TiO3 materials

The defect energetics in y-LiAlO2, Li2 TiO3, and Li2ZrO3 materials used in tritium-producing burnable absorber rods and fusion solid breeder applications was investigated using density functional theory calculations. A comprehensive analysis of the charged defects was performed for cation and anion vacancies, interstitials, antisite defects, and 3H interstitial and substitutional defects to understand the defect structures at different charge states and their stability as a function of the electron chemical potential across the electronic band gap of crystals at operating temperature and oxygen partial pressure conditions. Through investigation of the local bonding configurations and projected electronic density of states of the 3H related charged defects, including 3H interstitial (3Hint), 3Hint bound with an oxygen interstitial, and substitutional 3H defects on the Li, O, and M (M¼ Al, Ti, and Zr) sites (3HLi, 3HO, and 3HM), the 3H states of these defects were distinguished, i.e. triton (3Hþ), neutral 3H (3H0), and tritide (3H-). The two stable 3H related defects under the Li2O-LiOH rich condition at T ¼ 1000 K, between P(O2) ¼ 10^-5 and 10^-25 atm were found to be 3H interstitial (3Hint) with charge of þ1 and neutral 3HLi (substitutional 3H on the Li site) in g-LiAlO2, Li2ZrO3, and Li2TiO3 materials. For Li2TiO3, the stability of the 3HO with charge of þ1 and 3HM with charge of 3 becomes comparable to that of 3Hint atm at P(O2) ¼ 1025 atm. Overall, our results indicate the energy cost to form the stable 3H defect species (3Hint with charge of þ1 and neutral 3HLi) in g-LiAlO2 material are higher than those of Li2TiO3 and Li2ZrO3 materials at T ¼ 1000 K, between P(O2) ¼ 10^-5 and 10^-25 atm. Interactions between the point defects and the 3H species as a function of the electron chemical potential across the band gap of the materials were also examined. All the three materials exhibit strong interactions between the 3Hint and the O vacancy, Li vacancy, and O interstitial defects with the strongest interactions found in the case of y-LiAlO2 phase, indicating a higher tendency to trap 3H at such point defects in y-LiAlO2.

Charged defect analysis, Tritium-producing burnabl↗
DOE OSTI2014

Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4} devices

We investigate point defects in the buffer layers CdS and ZnS that may arise from intermixing with Cu(In,Ga)(S,Se){sub 2} (CIGS) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical behavior of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities in the buffer. We find that In and Ga substituted on the cation site act as shallow donors in CdS and tend to enhance the prevailing n-type conductivity at the interface facilitated by Cd incorporation in CIGS, whereas they are deep donors in ZnS and will be less effective dopants. Substitutional In and Ga can favorably form complexes with cation vacancies (A-centers) which may contribute to the “red kink” effect observed in some CIGS-based devices. For CZTS absorbers, we find that Zn and Sn defects substituting on the buffer cation site are electrically inactive in n-type buffers and will not supplement the donor doping at the interface as in CIGS/CdS or ZnS devices. Sn may also preferentially incorporate on the S site as a deep acceptor in n-type ZnS, which suggests possible concerns with absorber-related interfacial compensation in CZTS devices with ZnS-derived buffers. Cu, Na, and K impurities are found to all have the same qualitative behavior, most favorably acting as compensating acceptors when substituting on the cation site. Our results suggest one beneficial role of K and Na incorporation in CIGS or CZTS devices is the partial passivation of vacancy-related centers in CdS and ZnS buffers, rendering them less effective interfacial hole traps and recombination centers.

36 MATERIALS SCIENCE↗