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Traditional circuit analysis defines the power gain of an oscillator to be finite, since there is an output without an input. By defining power gain as the ratio of output power to input power, however, finite power gain can be characterized. Several simple circuit equations which can be used to find power gain in an oscillator circuit are presented and discussed.
In this paper we present first, the results of a study conducted to investigate the microwave performance of a wideband (25-31 GHz) GaN MMIC distributed high power amplifier (HPA). Second, we compare and contrast the above performance with that of an alternate architecture that relies on two HPAs to provide contiguous 25-31 GHz coverage. The two HPAs operate across 25-28 GHz and 27-31 GHz, respectively, and can be switched in and out depending on the need at any given time. The parameters investigated includes the output power, gain, power added efficiency, bandwidth, RMS error vector magnitude for offset-QPSK, 8PSK, 16APSK, and 32 APSK waveforms, 3rd-order intermodulation distortion products, noise figure, and single sideband phase noise.
The feasibility of Ka-band GaN-on-SiC MMIC based balanced power amplifier for science data downlinks from NASA’s lunar mission assets in space is investigated. The balanced amplifier combines the RF output power from two power amplifiers using a rectangular waveguide based 3-dB hybrid coupler. The investigation includes characterizing the balanced amplifier for the overall RF output power, Gain, power added efficiency, RMS error vector magnitude for offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, 3rd order intermodulation products, and noise figure. The balanced amplifier has high output RF power and good linearity and can support high data rate downlinks from the surface and vicinity of the Moon to Earth.
A cognitive radio on a future NASA near-Earth spacecraft will be capable of sensing its environment and dynamically adapting its operating parameters to provide the desired SATCOM service to the mission. A key component that can enable this type of operation is a high-power amplifier (HPA) that resides on the radio platform. In this paper, we present the RF performance characteristics of a Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added efficiency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rd-order intermodulation distortion (IMD) products, spectrum, spectral regrowth, noise figure (NF), and phase noise. The data presented indicates that the HPA meets NTIA, military, and commercial spectral mask requirements. In addition, we discuss the benefits offered by the above performance characteristics toward the design and implementation of a cognitive radio platform. Furthermore, as examples, we discuss three potential use cases that apply artificial intelligence (AI) and machine learning (ML) techniques and exploit the performance characteristics discussed above to provide a knowledge-based cognitive radio platform design for SATCOM. Thus, cognitive radios with performance flexibility can enable roaming and provide seamless interoperability autonomously in the future between NASA, commercial, and other space networks owned by U.S. government agencies.
A cognitive radio on a future NASA near-Earth spacecraft will be capable of sensing its environment and dynamically adapting its operating parameters to provide the desired SATCOM service to the mission. A key component that can enable this type of operation is a high-power amplifier (HPA) that resides on the radio platform. In this report, we present the RF performance characteristics of a Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added efficiency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rdorder intermodulation distortion (IMD) products, spectrum, spectral regrowth, noise figure (NF), phase noise, and group delay. The data presented indicates that the HPA meets NTIA, military, and commercial spectral mask requirements. In addition, we discuss the benefits offered by the above performance characteristics toward the design and implementation of a cognitive radio platform. Furthermore, as examples, we discuss three potential use cases that apply artificial intelligence (AI) and machine learning (ML) techniques and exploit the performance characteristics discussed above to provide a knowledge-based cognitive radio platform design for SATCOM. Thus, cognitive radios with performance flexibility can enable roaming and provide seamless interoperability autonomously in the future between NASA, commercial, and other space networks owned by U.S. government agencies.
The paper demonstrates a spectrally efficient Ka-band GaN MMIC based high-power amplifier (HPA) that uses a waveguide 4-port magic-tee as a 2-way power combiner to combine the output from two lower power amplifier circuits. The paper presents for the prototype HPA the measured output power, gain, power added efficiency, error vector magnitude for Offset-QPSK, 8PSK, 16APSK, 32APSK, and 16QAM waveforms, waveform spectrum, and out-of-band spectral regrowth. The HPA is intended for establishing a direct communication link between assets on the lunar surface/orbit and Earth.
Output power and gain saturation characteristics for high speed flowing gas molecular lasers, discussing electrically excited fluid mixing carbon dioxide laser
Power gain in spacecraft power supply obtained by switching off digital computer system
Depletion-mode InGaAs microwave power MISFETs with 1-micron gate lengths and up to 1-mm gate widths have been fabricated using an ion-implantation process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The dc I-V characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W with a corresponding power gain and power-added efficiency of 4.3 dB and 38 percent, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, output power stability within 1.2 percent over 24 h of continuous operation was achieved. In addition, a drain current drift of 4 percent over 10,000 sec was obtained.
The output power from a single gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) power amplifier (PA) chip is limited to few watts. To achieve higher power, the output from several chips have to be combined. In this paper we present, the results of a study conducted to investigate a 2-way power combiner to combine the output power from two GaN MMIC based high power amplifier (HPA) chips The parameters investigated includes the power combiner characteristics, individual GaN MMIC based HPA output power, gain, and power added efficiency, and the overall performance of the combined amplifier.
This paper presents experimental and theoretical studies of the small signal gain and the radiant power for one configuration of CO2 gasdynamic lasers to define the optimum-gas temperature, pressure and gas compositions for the gain and the laser power. The laser was operated with two gas mixtures (CO2-N2-He and CO2-N2-H2O) at temperatures of 800-2200 deg K, pressures of 2-16 atm, and a wide range of gas compositions. For this laser optimum gas temperatures were roughly 1500-1600 deg K for gain and more than 2200 deg K for power. It was found that the gasdynamic laser would not oscillate for He or H2O concentrations of less than 10% and 1%, respectively. The various kinetic processes for establishing gain and the various laser cavity parameters that determine laser power were examined. The theories were assessed for their ability to predict gain and power. In most cases, the gain theory gave excellent quantitative results whereas the power theory gave only qualitative results. Laser power of nearly 2 kw was obtained.
The power gain and thrust for plasma engines available by unreeling 10 km of insulated Al wire from a spacecraft are investigated. The wire, unreeling in the vertical, would cut the earth's magnetic field lines, thereby generating 20 kW of power in the wire. A drag loss of 20.4 kJ/sec would reduce the power gain to 18.7 kW, an efficiency of 92 percent. Thicker wires could push the power gain to 1 MW at 95 percent efficiency. Conductive 'balloons' at the ends of the tether would function as ionospheric 'brushes' to complete the circuit. Reversing the IXB force by employing on-board stored power would drive the tether current against the induced voltage, providing a 1 N thrust for 8 kW of energy consumed, which could be supplied by solar panels during the day portion of orbit. The equivalent thrust by conventional stationkeeping means would consume 8000 kg of propellant/yr. Techniques for stabilizing the tether in the presence of variable magnetic fields are discussed.
Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3).
This program was to develop a ruggedized transistor capable of meeting the following CW objectives at 2.3 gigahertz: a power output of 20 watts, a power gain of 6 db, and an efficiency of 40 percent. Devices developed produced the following CW performance at 2.3 gigahertz: a power output of 23 watts, a power gain of 7.7 db, and an efficiently of 40.0 percent. This performance was achieved with an eight-cell TA8407 transistor design having the following modifications: a thin pellet, high-frequency diffusion, high-level emitter ballasting, an optimized emitter-bonding configuration for uniform power sharing, and a package that provides for some internal matching through the use of distributed line techniques.
The use of a quantitative analysis of the dominant source of relaxation in ruby spin systems to make predictions of key maser amplifier parameters is described. The spin-lattice Hamiltonian which describes the interaction of the electron spins with the thermal vibrations of the surrounding lattice is obtained from the literature. Taking into account the vibrational anisotropy of ruby, Fermi's rule is used to calculate the spin transition rates between the maser energy levels. The spin population rate equations are solved for the spin transition relaxation times, and a comparison with previous calculations is made. Predictions of ruby gain, inversion ratio, and noise temperature as a function of physical temperature are made for 8.4-GHz and 32-GHz maser pumping schemes. The theory predicts that ruby oriented at 90 deg will have approximately 50 percent higher gain in dB and slightly lower noise temperature than a 54.7-deg ruby at 32 GHz (assuming pump saturation). A specific calculation relating pump power to inversion ratio is given for a single channel of the 32-GHz reflected wave maser.
A simple co-design example in a reduced parameter space is presented for an oscillating flap device. Initially, the WEC geometry and mass properties are considered along with drivetrain gear ratio, inertia, motor constant and stiffness under both PI and optimal control. This parameter space is reduced to those to which performance is most sensitive for a fixed geometry. The gear ratio, drivetrain stiffness, and flap mass are found to be the most impactful design criteria as they can create orders of magnitude variations in power performance. The performance of the optimized system is compared with several sub-optimal variants in terms of electrical and mechanical power capture, transmission coefficients, and transducer power gain. Notably, though substantial power capture improvements are demonstrated when an optimal controller is employed, this power capture remains sensitive to appropriate selections of drivetrain and flap design parameters, implying that control co-design procedures remain necessary for high-performing WECs. Furthermore, a number of practical caveats and extensions to the presented co-design methodology are suggested, including the characterization of system static friction, especially in the presence of high gear ratios.
Variable-gain power regulator is used to maintain constant load voltage. There are two feedback loops. One is tied directly with regulator to feed error voltage, which is sum of reference and load voltages. Second loop is tied with reactor, where output current of thermionic fuel elements is fed back to signal generator.
The SNS junctions were limited to having gold (n) layers of less than 3000 A in order to avoid having the tin (S) films become normal under the influence of the signal current in the gold. The gold layer was alloyed with 10 wt% copper to shorten its electronic mean free path, increasing the tin layer critical current while decreasing the Josephson critical current. It was also found that a previously reported anomalous voltage shift in the presence of I2 is caused by the tin being driven normal. After deposition, the samples were transferred to a conventional cryostat to provide better thermal contact to the films. This reduction of heating in the films produced more linear I-V characteristics and a change in the constant voltage current gain. In order to achieve power gain the SNS device must be operated at lower temperatures were the effects of fluctuations are less and be constructed such that the input resistance is much reduced and the dynamic output resistance increased. A geometry is proposed using a more sophisticated evaporator.