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Effect of proton irradiation on anatase TiO 2 nanotube anodes for lithium-ion batteries
The role of defects in the charge transfer and transport properties of electrode materials for lithium-ion batteries has recently garnered increased interest. It is widely known that ion irradiation promotes the formation of defects within a crystalline solid. Within all ion species used for irradiation, protons are expected to create primarily simple Frenkel pair point defects without significantly changing the stoichiometry of the damaged region of the target material. This work investigates the effect of proton irradiation at varying temperatures on the electrochemical properties of anatase TiO 2 nanotube (TiO2-NT) electrode for lithium-ion battery applications. Anatase TiO 2 -NTs are irradiated at both room temperature (25 °C) and 250 °C and compared with non-irradiated control specimens. Characterization by Raman spectroscopy and XRD suggests that the irradiation at both temperatures does not alter the long-range order of the nanotubes. Yet, high-resolution TEM reveals that defect clusters are formed upon irradiation and increase in size with increasing temperature. Both irradiated samples exhibit increased capacity and enhanced rate capability compared with the non-irradiated control, which can be explained by increased storage sites as well as improved Li + diffusivity due to the presence of irradiation-induced defects. This study presents a unique perspective on pathways to engineer functional nanostructured electrode materials by tailoring irradiation conditions.
Doubling the critical current density of high temperature superconducting coated conductors through proton irradiation
The in-field critical current of commercial YBa{sub 2}Cu{sub 3}O{sub 7} coated conductors can be substantially enhanced by post-fabrication irradiation with 4 MeV protons. Irradiation to a fluence of 8 × 10{sup 16} p/cm{sup 2} induces a near doubling of the critical current in fields of 6 T || c at a temperature of 27 K, a field and temperature range of interest for applications, such as rotating machinery. A mixed pinning landscape of preexisting precipitates and twin boundaries and small, finely dispersed irradiation induced defects may account for the improved vortex pinning in high magnetic fields. Our data indicate that there is significant head-room for further enhancements.
Measurement of thermal conductivity in proton irradiated silicon
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Microstructure and microchemistry study of irradiation-induced precipitates in proton irradiated ZrNb alloys
Proton irradiation induced Nb redistribution in Zr-xNb alloys (x = 0.4, 0.5, 1.0 wt%) has been investigated using scanning transmission electron microscopy/energy dispersive X-ray spectroscopy (STEM/EDS). Zr-xNb alloys are mainly composed of Zr matrix, native Zr–Nb–Fe phases, and β-Nb precipitates. After 2 MeV proton irradiation at 350 °C, a decrease of Nb content in native precipitates, as well as irradiation-induced precipitation of Nb-rich platelets (135 69 nm long and 27 12 nm wide) were found. Nb-rich platelets and Zr matrix form the Burgers orientation relationship, [$1\bar{1}1$]//[$2\bar{1}\bar{1}0$] and (011)//(0002). The platelets were found to be mostly coherent with the matrix with a few dislocations near the ends of the precipitate. The coherent strain field has been measured in the matrix and platelets by the 4D-STEM technique. Here, the growth of Nb-rich platelets is mainly driven by coherency and dislocation-induced strain fields. Irradiation may both enhance the diffusion and induce segregation of interstitial Nb to the ends of the irradiation induced platelets, further facilitating their growth.
Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale+? RFSoC Field-Programmable Gate Array under Proton Irradiation.
Abstract not provided.
2.6MeV proton irradiation effects on the surface integrity of depleted UO2
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Anisotropic upper critical field of pristine and proton-irradiated single crystals of the magnetically ordered superconductor RbEuFe{sub 4}As{sub 4
We present a study of the upper critical field H-c2 of pristine and proton-irradiated RbEuFe4As4 crystals in pulsed magnetic fields of up to 65 T. The data for H-c2 reveal pronounced downwards curvature, particularly for the in-plane field orientation, and a superconducting anisotropy that decreases with decreasing temperature. These features are indicative of Pauli paramagnetic limiting. For the interpretation of these data, we use a model of a clean single-band superconductor with an open Fermi surface in the shape of a warped cylinder, which takes into account Zeeman spin splitting. Fits to the data reveal that the in-plane upper critical field is Pauli paramagnetic limited, while the out-of-plane upper critical field is orbitally limited and that the orbital and paramagnetic fields have opposite anisotropies. A consequence of this particular combination is the unusual inversion of the anisotropy H-c2(ab) < H-c2(c) of the irradiated sample at temperatures below 10 K. The fits also yield an in-plane Maki parameter alpha(110)(M) approximate to 2.6 exceeding the critical value for the formation of the Fulde-Ferrell-Larkin-Ovchinnikov state. Nevertheless, the current measurements did not reveal direct evidence for the occurrence of this state.
Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN [Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial n-GaN]
Here, inherent advantages of wide bandgap materials make GaN-based devices attractive for power electronics and applications in radiation environments. Recent advances in the availability of wafer-scale, bulk GaN substrates have enabled the production of high quality, low defect density GaN devices, but fundamental studies of carrier transport and radiation hardness in such devices are lacking. Here, we report measurements of the hole diffusion length in low threading dislocation density (TDD), homoepitaxial n-GaN, and high TDD heteroepitaxial n-GaN Schottky diodes before and after irradiation with 2.5 MeV protons at fluences of 4–6 × 10 13 protons/cm 2 . We also characterize the specimens before and after irradiation using electron beam-induced-current (EBIC) imaging, cathodoluminescence, deep level optical spectroscopy (DLOS), steady-state photocapacitance, and lighted capacitance-voltage (LCV) techniques. We observe a substantial reduction in the hole diffusion length following irradiation (50%–55%) and the introduction of electrically active defects which could be attributed to gallium vacancies and associated complexes (V Ga -related), carbon impurities (C-related), and gallium interstitials (Ga i ). EBIC imaging suggests long-range migration and clustering of radiation-induced point defects over distances of ~500 nm, which suggests mobile Ga i . Following irradiation, DLOS and LCV reveal the introduction of a prominent optical energy level at 1.9 eV below the conduction band edge, consistent with the introduction of Ga i .
X-ray diffraction studies of 145 MeV proton-irradiated AlBeMet 162
Not Available
Correlation of a Bipolar-Transistor-Based Neutron Displacement Damage Sensor Methodology with Proton Irradiations
For this research, a bipolar-transistor-based sensor technique has been used to compare silicon displacement damage from known and unknown neutron energy spectra generated in nuclear reactor and high-energy-density physics environments. The technique has been shown to yield 1-MeV(Si) equivalent neutron fluence measurements comparable to traditional neutron activation dosimetry. This study significantly extends previous results by evaluating three types of bipolar devices utilized as displacement damage sensors at a nuclear research reactor and at a Pelletron particle accelerator. Ionizing dose effects are compensated for via comparisons with 10-keV x-ray and/or cobalt-60 gamma ray irradiations. Non-ionizing energy loss calculations adequately approximate the correlations between particle-device responses and provide evidence for the use of one particle type to screen the sensitivity of the other.
Proton irradiated graphite grades for a long baseline neutrino facility experiment
In search of a low-Z pion production target for the Long Baseline Neutrino Facility (LBNF) of the Deep Underground Neutrino Experiment (DUNE) four graphite grades were irradiated with protons in the energy range of 140–180 MeV, to peak fluence of ~6.1×10 20 p/cm 2 and irradiation temperatures between 120–200 °C. The test array included POCO ZXF-5Q, Toyo-Tanso IG 430, Carbone-Lorraine 2020 and SGL R7650 grades of graphite. Irradiation was performed at the Brookhaven Linear Isotope Producer. Postirradiation analyses were performed with the objective of (a) comparing their response under the postulated irradiation conditions to guide a graphite grade selection for use as a pion target and (b) understanding changes in physical and mechanical properties as well as microstructure that occurred as a result of the achieved fluence and in particular at this low-temperature regime where pion graphite targets are expected to operate. A further goal of the postirradiation evaluation was to establish a proton-neutron correlation damage on graphite that will allow for the use of a wealth of available neutron-based damage data in proton-based studies and applications. Macroscopic postirradiation analyses as well as energy dispersive x-ray diffraction of 200 KeV x rays at the NSLS synchrotron of Brookhaven National Laboratory were employed. The macroscopic analyses revealed differences in the physical and strength properties of the four grades with behavior however under proton irradiation that qualitatively agrees with that reported for graphite under neutrons for the same low temperature regime and in particular the increase of thermal expansion, strength and Young’s modulus. The proton fluence level of ~10 20 cm -2 where strength reaches a maximum before it begins to decrease at higher fluences has been identified and it agrees with neutron-induced changes. X-ray diffraction analyses of the proton irradiated graphite revealed for the first time the similarity in microstructural graphite behavior to that under neutron irradiation and the agreement between the fluence threshold of ~5×10 20 cm -2 where the graphite lattice undergoes a dramatic change. The confirmed similarity in behavior and agreement in threshold fluences for proton and neutron irradiation effects on graphite reported for the first time in this study will enable the safe utilization of the wealth of neutron irradiation data on graphite that extends to much higher fluences and different temperature regimes by the proton accelerator community searching for multi-MW graphite targets.
Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots
In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p{sup +}n diodes with embedded ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiated with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. These defects correspond to electron traps previously identified in GaAs. In addition, a 0.53 eV electron trap and a 0.14 eV hole trap are found in the QD layers before proton irradiation. It is shown that these native traps are also unaffected by irradiation. The nature of the 0.14 eV hole trap is thought to be Ga-vacancies in the GaP strain balancing layers.
Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage
The effect of proton irradiation on the off-state drain breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was studied by irradiating protons from the backside of the samples through via holes fabricated directly under the active area of the HEMTs. There was no degradation of drain current nor enhancement of off-state drain voltage breakdown voltage observed for HEMTs irradiated with 275 keV protons, for which the defects created by the proton irradiation were intentionally placed in the GaN buffer. HEMTs with defects positioned in the 2 dimensional electron gas channel region and AlGaN barrier using 330 keV protons not only showed degradation of both drain current and extrinsic transconductance but also exhibited an improvement of the off-state drain breakdown voltage. Finite-element simulations showed the enhancement of the latter were due to a reduction in electric field strength at the gate edges by introduction of charged defects.
Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation
The effect of proton irradiation on the electrical characteristics of high-voltage (3 kV) 4H-SiC junction diodes is studied. The diodes are irradiated through a 10-μm-thick Ni mask. The proton energy and the irradiation dose are 2.8 MeV and 4 × 10{sup 11} cm{sup –2}, respectively. After irradiation, the forward differential resistance of the diodes increased by ~35%, the reverse-recovery charge decreased by a factor of ~3, and the nature of the reverse recovery became “hard.”.