Paraelectric-resonance spectroscopy.
Paraelectric resonance spectroscopy on KCl, using bistable dipole model
Estle, T. L.↗
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Effect of internal strains on the paraelectric resonance of Li /plus/ in KCl
Li positive ions in KCl crystals, investigating internal strains effect on paraelectric resonance spectra
Dischler, B.↗
Paraelectric gas flow accelerator
A substrate is configured with first and second sets of electrodes, where the second set of electrodes is positioned asymmetrically between the first set of electrodes. When a RF voltage is applied to the electrodes sufficient to generate a discharge plasma (e.g., a one-atmosphere uniform glow discharge plasma) in the gas adjacent to the substrate, the asymmetry in the electrode configuration results in force being applied to the active species in the plasma and in turn to the neutral background gas. Depending on the relative orientation of the electrodes to the gas, the present invention can be used to accelerate or decelerate the gas. The present invention has many potential applications, including increasing or decreasing aerodynamic drag or turbulence, and controlling the flow of active and/or neutral species for such uses as flow separation, altering heat flow, plasma cleaning, sterilization, deposition, etching, or alteration in wettability, printability, and/or adhesion.
Sherman, Daniel M.↗
Low frequency dielectric relaxation in boracites
In order to elucidate the nature of the imperfections which adversely affect pyroelectric processes in boracites, the thermal and dispersive characteristics of the low frequency dielectric response in iron-iodide boracite (Fe3B7O13I) and copper-chloride boracite (Cu3B7O13Cl) have been investigated. These characteristics were measured as a function of crystallographic orientation and applied field in both the ferroelectric and paraelectric states. The low frequency dielectric relaxation of 100 line oriented multi-domain copper-chloride boracite clearly indicates the dipole nature of the lattice imperfections. The activation energies calculated from a noninteracting Debye model, are 0.53 eV in the ferroelectric phase and 0.10 eV in the paraelectric phase.
Kim, Q.↗
Thin-Film Ferro Electric-Coupled Microstripline Phase Shifters With Reduced Device Hysteresis
This work deals with the performance of coupled microstripline phase shifters (CMPS) fabricated using BaxSr 1 -xTiO 3 (BST) ferroelectric thin films. The CMPS were fabricated using commercially available pulsed laser deposition BST films with Ba:Sr ratios of 30:70 and 20:80. Microwave characterization of these CMPS was performed at upper Kuband frequencies, particularly at frequencies near 16 and 18 GHz. X-ray diffraction studies indicate that the 30:70 films exhibit almost a 1:1 ratio between the in-plane and out-of-plane lattice parameters, suggesting that their cubics create strain -free films suitable for producing CMPS devices with reduced hysteresis in the paraelectric state. The quality of performance of the CMPS was studied based on their relative phase shift and insertion loss within the DC bias range of 0 to 400 V (i.e., E-field ranges within 0 to 53 V/micron). The performance of the CMPS was tested as a function of temperature to investigate their operation in the paraelectric, as well as in the ferroelectric, state (i.e., above and below the Curie temperature, respectively). The novel behavior discussed here is based on the experimental observation of the CMPS. This behavior, observed for the aforementioned cation ratio, highlights the relevance of good crystalline structure for high-quality CMPS.
Miranda, Felix A.↗
Phonons, electrons, and protons in ferroelectric materials.
Phonons, electrons and protons in ferro- paraelectrics and hydrogen bonded ferroelectrics, examining higher frequency optical and lower frequency dielectric properties
Silverman, B. D.↗
Electrocaloric effect in potassium dihydrogen phosphate.
Electrocaloric effect from 78-130 K on crystalline potassium dihydrogen phosphate, showing quadratic dependence on applied field /and polarization/ in paraelectric phase
Wiseman, G. G.↗
Long-wavelength optical phonons and phase transitions in SbSI
Optical phonons and temperature dependent phase transitions in paraelectric antimony and ferroelectric sulfoiodide semiconductors, using polarized IR and Raman spectra measurements
Agrawal, D. K.↗
Raman scattering in antiferroelectric ammonium dihydrogen arsenate
Light scattering measurements of the Raman active modes of vibration in the range from 10 to 4000 per cm are reported for the paraelectric phase of NH4H2AsO4 in the temperature range from 220 to 295 K. Through examination of these spectra the protonic, transverse optic, internal, and O-H-O valence vibrations are identified, their symmetries are determined.
Leung, R. C.↗
Performing spectroscopic and specific heat studies of improper ferroelectrics
The results of infrared measurements on Ni-Br, Cu-Cl, and Fe-I boracite improper ferroelectrics and far infrared measurements of Ni-Br boracite are presented. The boracites have the general formula X3B7O3Y, where X = divalent metal and Y = halogen. They undergo a first order phase transition from a high temperature paraelectric phase with cubic symmetry to a ferroelectric phase with orthorhombic symmetry. The boracites are "improper ferroelectrics" since the spontaneous polarization is not the primary order parameter in the cubic-orthorhombic phase transition. Current understanding of these materials is that the primary order parameter is associated with a doubly degenerate zone-boundary phonon in the cubic phase. The degenerate critical modes become homogeneous and split into the A sub 1 and A sub 2 modes in the orthorhombic phase, doubling the volume of the primitive cell. An harmonic coupling between the softing A sub 1 and a low frequency A sub 1 optic mode induces a spontaneous polarization as a secondary effect in the ferroelectric phase. This secondary non-critical nature of the ferroelectric mode earns these materials the "improper" title and is responsible for their unique properties and high figure of merit in detector use.
Coleman, L. B.↗
Raman study of the improper ferroelectric phase transition in iron iodine boracite
The reduction in the dielectric anomaly near the phase transition temperature in improper ferroelectrics suggests that this behavior may be exploited to significantly enhance the figure-of-merit for pyroelectric infrared detection. This reduction is associated with a decoupling of the thermal and dielectric responses which, in turn, reflects the unusual nature of the lattice instability at the phase transition. In order to elucidate the characteristics of the phonon behavior connected with the lattice instability, Raman scattering of Fe3B7O13I has been examined in both the paraelectric and ferroelectric phases. The results of this study as well as results from earlier measurements on other boracites, provides insight into the nature of the mode softening.
Kim, Q.↗
Boundary Layer Flow Control with a One Atmosphere Uniform Glow Discharge Surface Plasma
Low speed wind tunnel data have been acquired for planar panels covered by a uniform, glow-discharge surface plasma in atmospheric pressure air known as the One Atmosphere Uniform Glow Discharge Plasma (OAUGDP). Streamwise and spanwise arrays of flush, plasma-generating surface electrodes have been studied in laminar, transitional, and fully turbulent boundary layer flow. Plasma between symmetric streamwise electrode strips caused large increases in panel drag, whereas asymmetric spanwise electrode configurations produced a significant thrust. Smoke wire flow visualization and mean velocity diagnostics show the primary cause of the phenomena to be a combination of mass transport and vortical structures induced by strong paraelectric ElectroHydroDynamic (EHD) body forces on the flow.
J Reece Roth↗
Characterization of (Ba(0.5)Sr(0.5)) TiO3 Thin Films for Ku-Band Phase Shifters
The microstructural properties of (Ba(0.5)Sr(0.5)TiO3) (BSTO) thin films (300, 700, and 1400 nm thick) deposited on LaAlO3 (LAO) substrates were characterized using high-resolution x-ray diffractometry. Film crystallinity was the parameter that most directly influenced tunability, and we observed that a) the crystalline quality was highest in the thinnest film and progressively degraded with increasing film thickness; and b) strain at the film/substrate interface was completely relieved via dislocation formation. Paraelectric films such as BSTO offer an attractive means of incorporating low-cost phase shifter circuitry into beam-steerable reflectarray antennas.
Mueller, Carl H.↗
Tunable Dielectric Materials and Devices for Broadband Wireless Communications
Wireless and satellite communications are a rapidly growing industries which are slated for explosive growth into emerging countries as well as countries with advanced economies. The dominant trend in wireless communication systems is towards broadband applications such as multimedia file transfer, video transmission and Internet access. These applications require much higher data transmission rates than those currently used for voice transmission applications. To achieve these higher data rates, substantially larger bandwidths and higher carrier frequencies are required. A key roadblock to implementing these systems at K-band (18-26.5 GHz) and Ka-band (26.5-40 GHz) is the need to develop hardware which meets the requirements for high data rate transmission in a cost effective manner. In this chapter, we report on the status of tunable dielectric thin films for devices, such as resonators, filters, phased array antennas, and tunable oscillators, which utilize nonlinear tuning in the control elements. Paraelectric materials such as Barium Strontium Titanate ((Ba, Sr)TiO3) have dielectric constants which can be tuned by varying the magnitude of the electric field across the material. Therefore, these materials can be used to control the frequency and/or phase response of various devices such as electronically steerable phased array antennas, oscillators, and filters. Currently, tunable dielectric devices are being developed for applications which require high tunability, low loss, and good RF power-handling capabilities at microwave and millimeter-wave frequencies. These properties are strongly impacted by film microstructure and device design, and considerable developmental work is still required. However, in the last several years enormous progress has occurred in this field, validating the potential of tunable dielectric technology for broadband wireless communication applications. In this chapter we summarize how film processing techniques, microwave test configurations, and prototype devices have combined to drive the field to its current stage of development.
Mueller, Carl H.↗
Perovskite Superlattices as Tunable Microwave Devices
Experiments have shown that superlattices that comprise alternating epitaxial layers of dissimilar paraelectric perovskites can exhibit large changes in permittivity with the application of electric fields. The superlattices are potentially useful as electrically tunable dielectric components of such microwave devices as filters and phase shifters. The present superlattice approach differs fundamentally from the prior use of homogeneous, isotropic mixtures of base materials and dopants. A superlattice can comprise layers of two or more perovskites in any suitable sequence (e.g., ABAB..., ABCDABCD..., ABACABACA...). Even though a single layer of one of the perovskites by itself is not tunable, the compositions and sequence of the layers can be chosen so that (1) the superlattice exhibits low microwave loss and (2) the interfacial interaction between at least two of the perovskites in the superlattice renders either the entire superlattice or else at least one of the perovskites tunable.
Christen, H. M.↗
Effects of Dopant on Depoling Temperature in Modified BiScO3 - PbTiO3
In recent years there has been a renewed interest for high temperature piezoelectrics for both terrestrial and aerospace applications. These applications are limited in part by the operating temperature, which is usually taken as one half of the Curie temperature (Tc), and is 200C for one of the most widely used commercial piezoelectrics, Pb(Zr,Ti)O3 (PZT). In an effort to increase Tc, subsequent research into high temperature Bi(BB)O3 PbTiO3 piezoelectrics led to the discovery of the morphotropic phase boundary (MPB) in the high-Tc BiScO3 PbTiO3 (BS-PT) system with a Tc of 460C and a d33 of 460 pmV. The Tc marks the ferroelectric to paraelectric phase transformation and while, in general, a phase transformation leads to thermal depoling in piezoelectrics with low or moderate Tcs, for high Tc piezoelectrics thermally assisted dipole rotation can lead to randomization of domains at temperatures below Tc. It becomes necessary to determine the depoling temperature (Td) which dictates the actual working temperature range. By doping for Sc and Ti the Td can be shifted while maintaining similar electromechanical properties as a function of temperature. The effect of this B-site doping on depoling temperature has been explored through the characterization of microstructure and weakhigh field measurements.
Actuator↗