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We demonstrate a silicon photonic integrated circuit fabricated through the CMOS manufacturing process, which features a bidirectionally pumped microring to achieve over 116 high-fidelity polarization entangled channels covering the entire optical C+L-band for flex-grid entanglement distribution.
Recent advances in cold atom interferometry with optical and magnetic atom guides have set the stage for quantum inertial sensors capable of operating in dynamic environments. In this work, we present three key innovations—evanescent-field (EF) atom guides, optical nanofiber testbeds, and membrane-waveguide photonic integrated circuit (PIC) platforms—to advance EF-guided atom interferometry. First, we demonstrate EF atom guides on optical nanofiber testbeds, which serve as performance benchmarks for our membrane-waveguide PIC platforms. Second, we achieve low-power ( ~ 5 mW) guiding of freely moving, laser-cooled 133 Cs atoms in two-color, traveling-wave EF optical dipole traps at the novel, heat-efficient magic wavelengths of 793 and 937 nm (i.e., “793/937-nm EF atom guides”). Concurrently, we design and fabricate membrane-waveguide PIC platforms for these EF atom guides; in our prior work, we showed that these structures safely accommodate 4–6 times the required optical trap power under vacuum and enable dense cold atom generation via magneto-optical trapping in the vicinity of the optical wavguide for efficient loading. Third, we verify preserved atomic coherence via microwave fields and EF-coupled Doppler-free Raman beams; to our knowledge, this is the first report of coherence fringes driven by co-propagating EF-coupled Raman beams with only 150 nW of total optical power. By providing a direct comparison between optical nanofiber testbeds and membrane-waveguide PIC platforms, our results lay critical groundwork for the on-chip realization of EF-guided atom interferometry and the development of fully integrated, compact, lightweight, and low-power quantum accelerometers and gyroscopes.
Nuclear weapon component assessment tests at the Z Machine rely on accurate X-ray yield measurements for model validation, design and analysis of component survivability, and source optimization. Yield measurement devices currently used do not provide the requisite certainty to enable accurate and efficient data analysis of test results, which leads to an increase in Z-shots required for evaluation, longer device development times, and higher operation costs. Additionally, current X-ray flux detectors lack high temporal resolution at the tails. Similarly, shock measurement techniques used for component assessment often lack the ability to spatially resolve wave behavior thereby limiting the ability to measure shock propagation dynamics needed to design the next generation of ND components. Here we present the development of a photonic micro-calorimeter and shock sensor consisting of meter-long waveguide spirals that are optomechanically coupled to X-ray absorbing layers to characterize yield and shock propagation at nanosecond timescales.
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Photonic integrated circuits incorporating intersubband transitions are ideal for mid-infrared and terahertz nanophotonics. However, the design of epitaxies has long been inhibited by two factors: the modest predictivity of ab initio theory and the absence of absolute intersubband gain and loss measurements under operating conditions. Existing measurements either yield inaccurate gain profiles or do not accurately assess dependence on frequency, bias, and temperature. Here, we present a delay-resolved absolute-referencing method for accurate gain evaluation without these limitations, addressing a long-standing challenge. By creating a photonic circuit that allows broadband pulses to traverse different lengths of a gain medium, we measure the absolute transmission of intersubband structures. Gain profiles match theoretical predictions at lower temperatures, with gain and dispersion clamping after lasing, and faster-than-expected degradation occurs at higher temperatures. Our approach provides a precise experimental evaluation of temperature-dependent gain performance and gives insight into optimizing temperature performance and frequency comb designs.
To reach the next level benefits of photonic integrated circuits (PICs), the Integrated Photonic Systems Roadmap-International describes the necessity of either heterogeneous or hybrid integration of light sources [1]. A new approach for hybrid integration is Photonic Wire Bonding where 3D nanolithography is used to pattern a polymer waveguide that connects light sources to PIC waveguides. The waveguides resemble electrical wire bonds and essentially do the same as their electrical counterpart for packaging photonic chips together. In order to reap the full benefits of a photonic wire bonds, the light source must be carefully packaged. In this work I seek to expand RIT’s photonic packaging capability by establishing a packaging process to integrate light sources, specifically an Indium Phosphide distributed feedback lasers and a reflective semiconductor optical amplifiers, directly onto a photonic integrated circuits. Another necessary requirement for PIC packaging is densely integrated electrical connectivity. In this thesis I developed a fine pitch flip chip interconnect technique demonstrated using gold stud bumps in conjunction with micro-dispensed solder paste. This work opens the door to high density photonic flip chip applications. The micro-dispensed solder paste dots having diameters 50-125 µm are currently being tested at a pitch of 150 µm . The gold stud bumps are formed with 1mil gold wire creating bumps with a diameter of 40-60 µm depending on specific parameter values. These capabilities will allow RIT to assemble and test novel photonic integrated devices, cutting down on the time and cost associated with third party assembly and tests facilities. Thereby keeping RIT at the forefront of photonic research.
Integration of phase change material (PCM) with photonic integrated circuits can transform large-scale photonic systems by providing non-volatile control over phase and amplitude. The next generation of commercial silicon photonic processes can benefit from the addition of PCM to enable ultra-low power, highly reconfigurable, and compact photonic integrated circuits for large-scale applications. Despite all the advantages of PCM-based photonics, today’s commercial foundries do not provide them in their silicon photonic processes yet. We demonstrate the first-ever electrically programmable PCM device that is monolithically post-processed in a commercial foundry silicon photonics process using a few fabrication steps and coarse-resolution photolithography. These devices achieved 1.4 dB/μm of amplitude switching contrast using a thin layer of 12.5 nm GeSbTe in this work. We have also characterized the reconfiguration speed as well as repeatability of these devices over 20,000 switching cycles. Our solution enables non-volatile photonic VLSI systems that can be fabricated at low cost and high reliability in a commercial foundry process, paving the way for the development of non-volatile programmable photonic integrated circuits for a variety of emerging applications.
A seamless chip-to-world photonic interface enables broad advancements in optical ranging, display, communication, computation and quantum information science. The ideal solution enables two-dimensional scanning of a diffraction-limited beam from anywhere on a photonic integrated circuit to a large number of resolvable spots. Current beam-scanning technologies are limited by a fundamental trade-off: photonic-integrated-circuits with diffractive optics offer scalability but have poor mode quality, whereas inertially limited micromechanical scanners provide high-quality beams but lack scalable integration. Here we report a photonic ski-jump—a nanoscale waveguide monolithically integrated on a piezoelectric cantilever—to overcome these limitations. It passively curls ~90° out-of-plane within a less-than-0.1 mm 2 footprint, emits a submicrometre, broadband diffraction-limited beam, and exhibits kilohertz-rate mechanical resonances with quality factors of over 10,000. Fabricated in a volume complementary metal–oxide–semiconductor (CMOS) foundry, our device enables scalable two-dimensional beam scanning. Driven on-resonance at CMOS-level voltages, it achieves a footprint-adjusted spot rate of 68.6 mega spots s –1 mm–², exceeding state-of-the-art micro-electro-mechanical systems mirrors by more than 50-fold, which is sufficient for one million pixels at 100 Hz from an approximately 1.5 mm diameter footprint. We demonstrate full-colour image and video projection, and single-photon initialization and readout from silicon vacancy centres in diamond. Finally, by demonstrating uniformity across a 64 ski-jump array, we establish a pathway to achieving greater than one gigaspot resolution at kilohertz rates within a sub-5-cm-diameter footprint, creating a seamless optical pipeline between integrated photonic processors and the free-space world.
Abstract Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300 mm foundry process. With this platform, we achieve single-photon emission via resonance fluorescence and scalable emission wavelength tunability. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries.
Final Scientific/Technical Report for DOE Award DE-SC0019581, “TTDAQ: A Continuous Flow, Timing and Trigger DAQ System.” The report summarizes Telluric Labs’ Phase II STTR work developing silicon-photonic building blocks for a software-defined, continuous-flow, trigger-less data acquisition system for next-generation high-energy and nuclear-physics detectors. The project focused on radiation-hard photonic integrated circuits, remote optical illumination, dense wavelength-division multiplexing, and a differential microring-resonator transceiver architecture designed to improve high-speed optical link stability and bandwidth. The report describes project objectives, technical accomplishments, AIM Photonics tape-outs, bench characterization, radiation-hardness testing, deferred integration work, and potential applications beyond physics readout.
Integrated quantum photonics holds significant promise for scalable photonic quantum information processing, quantum repeaters, and quantum networks, but its development is hindered by the mismatch between materials hosting high-quality quantum emitters and those compatible with mature photonic technologies. Heterogeneous integration offers a potential solution to this challenge, yet practical implementations have been limited by inevitable insertion losses at material interfaces. Here, we present a self-aligned heterogeneous quantum photonic integration approach that enables near-unity coupling efficiency at the interface. To showcase our approach, we demonstrate Purcell enhancement of a silicon vacancy (SiV) center in diamond induced by a heterogeneous photonic crystal cavity defined by titanium dioxide (TiO 2 ), as well as optical spin control and readout via a TiO 2 photonic circuit. We further show that, when combined with inverse photonic design, our approach enables efficient and broadband collection of single photons from a color center into a heterogeneous waveguide. Our approach is not restricted to SiV centers or TiO 2 ; it has the potential to be broadly applied to integrate diverse solid-state quantum emitters with thin-film photonic devices where conformal deposition is possible. Together, these results establish a practical route to scalable quantum photonic integrated circuits that combine high-quality quantum emitters with technologically mature photonic platforms.
The laser system is the most complex component of a light-pulse atom interferometer (LPAI), controlling frequencies and intensities of multiple laser beams to configure quantum gravity and inertial sensors. Its main functions include cold-atom generation, state preparation, state-selective detection, and generating a coherent two-photon process for the light-pulse sequence. To achieve substantial miniaturization and ruggedization, we integrate key laser system functions onto a photonic integrated circuit. Our study focuses on a high-performance silicon photonic suppressed-carrier single-sideband (SC-SSB) modulator at 1560 nanometers, capable of dynamic frequency shifting within the LPAI. By independently controlling radio frequency (RF) channels, we achieve 30-decibel carrier suppression and unprecedented 47.8-decibel sideband suppression at peak conversion efficiency of –6.846 decibels (20.7%). We investigate imbalances in both amplitudes and phases between the RF signals. Using this modulator, we demonstrate cold-atom generation, state-selective detection, and atom interferometer fringes to estimate gravitational acceleration, g ≈ 9.77 ± 0.01 meters per second squared, in a rubidium ( 87 Rb) atom system.
Ultra-violet (UV) and near-UV wavelengths are necessary for many important optical transitions for quantum technologies and various sensing mechanisms for biological and chemical detection. However, all well-known photonic platforms have excessively high losses in the UV, which has prevented photonic integrated circuits (PICs) being used to address these and other important application spaces. Photonic waveguides using low-loss alumina cores and silicon dioxide cladding have emerged as a promising solution because of alumina’s large optical bandgap and the high quality of films enabled by atomic layer deposition. These properties allow passive, low-loss waveguide operation down to at least 266 nm using multimode widths. However, to the best of our knowledge, active alumina PICs have only been realized using thermo-optic tuning, which precludes switching speeds shorter than approximately 100 microseconds, high circuit densities, and cryogenically compatible operation. Here, we introduce a CMOS-fabricated, piezo-optomechanical PIC platform using alumina waveguides and piezoelectric aluminum nitride strain actuators. The platform allows for sub-microsecond switching times, high circuit densities, and cryogenic operation which is desired in many UV PIC applications. We demonstrate a high-performance, reconfigurable optical filter operating at wavelengths as low as 320 nm. The filter has a 6-nanosecond switching time, a loaded linewidth of 3.3 GHz, tuning rate of 28 V/linewidth, and a hold power of less than 20 nW at one linewidth detuning. This work establishes the foundations for a new class of CMOS-fabricated, rapidly reconfigurable, and low-power UV photonic circuits compatible with wavelengths as low as 225 nm.
The Galton board is a desktop probability machine traditionally used to visualize the principles of statistical physics from classical particles. Here, we demonstrate a photonic Galton board that enables on-chip observation of statistics from single-photon interference. The photonic Galton board consists of a directional coupler matrix terminated by an array of superconducting nanowire detectors to provide spatiotemporal resolution. This design also allows for photon-number-resolving capability, making it suitable for high-speed photon counting. Our results demonstrate the compatibility between single-photon detector array and photonic integrated circuits, paving the way for implementing on-chip large-scale quantum optics experiments and photonic quantum computing.
We showcase a fully on-chip CMOS-fabricated silicon photonic integrated circuit employing a bidirectionally pumped microring and polarization splitter-rotators tailored for the generation of broadband (>9 THz), high-fidelity (90–98%) polarization-entangled photons. Spanning the optical C+L-band and producing over 116 frequency-bin pairs on a 38.4-GHz-spaced grid, this source is ideal for flex-grid wavelength-multiplexed entanglement distribution in multiuser networks.
We present a flexible, scalable, and low-noise design scheme for coupling free-space light into a silicon-on-insulator (SOI) electronic-photonic integrated circuit. The proposed scheme utilizes arrays of grating couplers with compact, inverse-designed power combining networks to couple a distributed optical collection area to a single output waveguide, forming a photonic antenna. Fabrication density compliance is maintained regardless of the antenna size, and the collection area can be scaled while maintaining a fixed noise floor. Using experimental grating array antennas fabricated in the GF45CLO platform, we demonstrate up to a 6.7× increase in the signal-to-noise ratio (SNR) of a lens-less monolithic free-space photonic receiver using a 4×4 grating array.
Photonic integrated circuits (PICs) are vital for developing affordable, high-performance optoelectronic devices that can be manufactured at an industrial scale, driving innovation and efficiency in various applications. Optical loss of modes in thin film waveguides and devices is a critical measure of their performance. Thin film growth, lithography, masking, and etching processes are imperfect processes that introduce significant sidewall and top-surface roughness and cause dominating optical losses in waveguides and photonic structures. This roughness, as perturbations couple light from guided to far-field radiation modes, leads to scattering losses that can be estimated from theoretical models. Typically, with UV-based lithography, sidewall roughness is significantly larger than wafer-top surface roughness. Atomic force microscopy (AFM) imaging measurement gives a 3D and high-resolution roughness profile, but the measurement is inconvenient, costly, and unscalable for large-scale PICs and at wafer-scale. Here, we evaluate the sidewall roughness profile based on 2D high-resolution scanning electron microscope (SEM) imaging. We characterized the loss on two homemade nitride and oxide films on 3-inch silicon wafers with 12 waveguide devices on each and correlated the scattering loss estimated from a 2D image-based sidewall profile and theoretical Payne model. The lowest loss of guided fundamental transverse electric (TE 0 ) mode is found at 0.075 dB/cm at 633 nm across 24 devices, a record at visible wavelength. Our work shows 100% success (edge continuity span exceeding 95% of image width/height) in edge detection in image processing of all images to estimate autocorrelation function and optical mode loss. These demonstrations offer valuable insights into waveguide sidewall roughness and a comparison of experimental and 2D SEM image processing based loss estimations with applications in loss characterization at wafer-scale PICs.
Si photonics has made rapid progress in research and commercialization in the past two decades. While it started with electronic–photonic integration on Si to overcome the interconnect bottleneck in data communications, Si photonics has now greatly expanded into optical sensing, light detection and ranging (LiDAR), optical computing, and microwave/RF photonics applications. From an applied physics point of view, this perspective discusses novel materials and integration schemes of active Si photonics devices for a broad range of applications in data communications, spectrally extended complementary metal–oxide–semiconductor (CMOS) image sensing, as well as 3D imaging for LiDAR systems. We also present a brief outlook of future synergy between Si photonic integrated circuits and Si CMOS image sensors toward ultrahigh capacity optical I/O, ultrafast imaging systems, and ultrahigh sensitivity lab-on-chip molecular biosensing.