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Results for “Pinning effect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Spin pinning effect to reconstructed oxyhydroxide layer on ferromagnetic oxides for enhanced water oxidation

Producing hydrogen by water electrolysis suffers from the kinetic barriers in the oxygen evolution reaction (OER) that limits the overall efficiency. With spin-dependent kinetics in OER, to manipulate the spin ordering of ferromagnetic OER catalysts (e.g., by magnetization) can reduce the kinetic barrier. However, most active OER catalysts are not ferromagnetic, which makes the spin manipulation challenging. In this work, we report a strategy with spin pinning effect to make the spins in paramagnetic oxyhydroxides more aligned for higher intrinsic OER activity. The spin pinning effect is established in oxideFM/oxyhydroxide interface which is realized by a controlled surface reconstruction of ferromagnetic oxides. Under spin pinning, simple magnetization further increases the spin alignment and thus the OER activity, which validates the spin effect in rate-limiting OER step. The spin polarization in OER highly relies on oxyl radicals (O∙) created by 1 st dehydrogenation to reduce the barrier for subsequent O-O coupling.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

In Situ Visualization of the Pinning Effect of Planar Defects on Li Ion Insertion

Longevity of Li ion batteries strongly depends on the interaction of transporting Li ions in electrode crystals with defects. However, detailed interactions between the Li ion flux and structural defects in the host crystal remain obscure due to the transient nature of such interactions. Here, by in situ transmission electron microscopy and density function theory calculations, we reveal how the diffusion pathways and transport kinetics of a Li ion can be affected by planar defects in a tungsten trioxide lattice. We uncover that changes in charge distribution and lattice spacing along the planar defects disrupt the continuity of ion conduction channels and dramatically increase the energy barrier of Li diffusion, thus, arresting Li ions at the defect sites and twisting the lithiation front. In conclusion, the atomic-scale understanding holds critical implications for rational interface design in solid-state batteries and solid oxide fuel cells.

25 ENERGY STORAGE↗
NASA NTRS1987

The effects of pin elasticity, clearance, and friction on the stresses in a pin-loaded orthotropic plate

The effects of pin elasticity, clearance, and friction on the stresses in a pin loaded orthotropic plate are studied. The effects are studied by posing the problem as a planar contact elasticity problem, the pin and the plate being two elastic bodies which interact through contact. Coulomb friction is assumed, the pin loads the plate in one of its principal material directions, and the plate is infinite in extent. A collocation scheme and interaction, in conjunction with a complex variable series solution, are used to obtain numerical results. The contact region between the plate and pin is unknown and must be solved for as part of the solution. The same is true of the region of friction induced no slip. Two pin stiffnesses, two clearance levels, two friction levels and two laminates, a (0/+ or - 45/90)s and a (02/+ or - 45)s, are studied. The effects of pin elasticity, clearance, and friction on the load capacity of the plate are assessed by comparing the load capacity of the plate with the capacity when the pin is rigid, perfectly fitting, and frictionless.

Hyer, M. W.↗
DOE OSTI2021

Modeling discontinuous dynamic recrystallization containing second phase particles in magnesium alloys utilizing phase field method

Pre-existing second phase particles can induce particle stimulated nucleation (PSN) and pinning effect on grain boundaries during DRX process of magnesium alloys. The interaction among pinning effect, PSN mechanism and strain-induced grain boundary migration (SIBM) nucleation mechanism imposes challenge in quantitative study of microstructure evolution. A phase field model that describes discontinuous dynamic recrystallization process considering second phase particles (PF-DDRX-SP) which mainly distribute along grain boundaries is developed. The second phase order parameter with diffusion interface is introduced to the free energy function. With considering the pinning effect of second phase particles on grain boundaries, the grain boundary energy couples the interaction between second phase and grains. The effect of second phase on dislocation density evolution is considered in the model, and the PSN and SIBM mechanism are both executed by limiting the nucleation position to the grain boundary and the second phase interface. For the validation, the initial topology consistent with initial microstructure is applied to the simulation of DRX kinetics and flow behavior of AZ80 magnesium alloy, and great reliability and accuracy of developed model is indicated. Furthermore, through the model, the microstructure evolution with different particle size and with different volume fraction of round particle during DRX process were simulated. Finally, the results show that particles with higher dispersion reduce the number of DRX nuclei, which indicate that second phase particles suppress the nucleation at grain boundaries because of the pinning effect. More importantly, the proposed model could also quantitatively predict the relationships between the parameters of second phase particles and DRX behaviors, and enable to optimize the initial second phase structure in a uniform grain structure during thermomechanical process.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Stress analysis of the compact specimen including the effects of pin loading

An improved method of boundary collocation was applied to the two-dimensional stress analysis of the compact specimen. The effects of the pin-loaded holes on stress-intensity factors and crack-opening displacements were investigated for various crack-length-to-specimen-width ratios, hole locations, and internal loadings. The stress-intensity factors for the 'standard' compact specimen under plane-stress or plane-strain conditions were found to be within 1 percent of the stress-intensity factors reported in the ASTM Test for Plane-Strain Fracture Toughness of Metallic Materials (E 399-72) over a range of crack-length-to-specimen-width ratios of 0.4 to 0.7. However, for crack-length-to-specimen-width ratios less than 0.4, the pin-load holes (which were not previously accounted for) had a significant effect on stress intensity and crack-opening displacements.

Newman, J. C., Jr.↗
DOE OSTI2021

Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current, and temperature. The as-grown and regrown diodes, with and without surface treatment, have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S I , dependence on the current was S I ~ I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10 –18 –10 –16 cm 2 /Hz (f = 10 Hz) at the current density J = 1 A/cm 2 at room temperature. The noise temperature dependences at different currents revealed peaks at T = 375–400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. Here, we argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode

A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant atoms, such as B, P, Al, and N. Medium and high voltage devices with deep junctions can be fabricated using this system. Lattice strain introduced by the implantation process needs to be recovered and dopant atoms activated by appropriate annealing process as the device performance is strongly associated with the extent of recovery of the lattice. Using Synchrotron X-ray Rocking Curve Topography (SXRCT) and Reciprocal Space Mapping (RSM), the strain induced by high energy implantation of Al and N in 4H-SiC in different patterns are measured and mapped. It is observed that the strain levels correlate with the total fluence levels. PiN diodes fabricated on these implanted wafers were then annealed at temperatures ranging from 1700 °C to 2000 °C for 60 min. The SXRCT and RSM analysis of the annealed samples suggests that for the same annealing duration, higher temperature leads to better lattice recovery.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Features of relaxation modes in soft magnetic metallic glasses and their correlation with magnetic ordering

Although the anneal-induced relaxation process of Fe-based metallic glasses has been widely reported, there is a lack of a systematic description of the relaxation modes of atoms. Here, in this work, the relaxation modes of FeSiBPC metallic glasses and their relationship with magnetic ordering have been investigated. A two-stage relaxation behavior has been observed, and the pinning effect of Curie temperature is found in the first stage. The short-range ordering involved in the β relaxation in the first stage is confined and facilitated by magnetic ordering. It causes a smaller E β compared to that of non-magnetic metallic glasses. In the second stage, the pinning effect disappears. It is mainly the medium-range rearrangements involved in α relaxation that begins to yield the influence on magnetic ordering. This work uncovers the inner magnet-influenced β relaxation in Fe-based metallic glasses and provides insights into the interaction between structural arrangement during relaxation and magnetic ordering.

36 MATERIALS SCIENCE↗
NASA NTRS2002

Effect of Pin Tool Shape on Metal Flow During Friction Stir Welding

It has been shown that metal moves behind the rotating Friction Stir Pin Tool in two separate currents or streams. One current, mostly on the advancing side, enters a zone of material that rotates with the pin tool for one or more revolutions and eventually is abandoned behind the pin tool in crescent-shaped pieces. The other current, largely on the retreating side of the pin tool is moved by a wiping process to the back of the pin tool and fills in between the pieces of the rotational zone that have been shed by the rotational zone. This process was studied by using a faying surface copper trace to clarify the metal flow. Welds were made with pin tools having various thread pitches. Decreasing the thread pitch causes the large scale top-to-bottorn flow to break up into multiple vortices along the pin and an unthreaded pin tool provides insufficient vertical motion for there to be a stable rotational zone and flow of material via the rotational zone is not possible leading to porosity on the advancing side of the weld.

McClure, J. C.↗
NASA NTRS2009

Investigating the Effects of Pin Tool Design on Friction Stir Welded Ti-6Al-4V

Friction stir welding (FSWing), a solid state joining technique, uses a non-consumable rotating pin tool to thermomechanically join materials. Heating of the weldment caused by friction and deformation is a function of the interaction between the pin tool and the work piece. Therefore, the geometry of the pin tool is in part responsible for the resulting microstructure and mechanical properties. In this study microwave sintered tungsten carbide (WC) pin tools with tapers and flats were used to FSW Ti-6Al-4V. Transverse sections of welds were mechanically tested, and the microstructure was characterized using optical microscopy (OM) and scanning election microscopy (SEM). X-ray diffraction (XRD) and electron back-scatter diffraction (EBSD) were used to characterize the texture within the welds produced from the different pin tool designs.

Rubisoff, H. A.↗
NASA NTRS1982

Length to diameter ratio and row number effects in short pin fin heat transfer

The relative effects of pin length to diameter ratio and of pin row geometry on the heat transfer from pin fins, was determined. Array averaged heat transfer coefficients on pin and endwall surfaces were measured for two configurations of staggered arrays of short pin fins (length to diameter ratio of 4). One configuration contained eight streamwise rows of pins, while the other contained only four rows. Results showed that both the 8-row and the 4-row configurations for an L sub p/D of 4, exhibit higher heat transfer than in similar tests on shorter pin fns (L sub p/D of 1/2 and 2). It was also found that for this L sub p/D ratio, the array averaged heat transfer was slightly higher with eight rows of staggered pins than with only four rows.

Brigham, B. A.↗
NASA NTRS1984

Length to diameter ratio and row number effects in short pin fin heat transfer

The relative effects of pin length to diameter ratio and of pin row geometry on the heat transfer from pin fins, was determined. Array averaged heat transfer coefficients on pin and endwall surfaces were measured for two configurations of staggered arrays of short pin fins (length to diameter ratio of 4). One configuration contained eight streamwise rows of pins, while the other contained only four rows. Results showed that both the 8-row and the 4-row configurations for an L sub p/D of 4, exhibit higher heat transfer than in similar tests on shorter pin fins (L sub p/D of 1/2 and 2). It was also found that for this L sub p/D ratio, the array averaged heat transfer was slightly higher with eight rows of staggered pins than with only four rows. Previously announced in STAR as N83-14431

Brigham, B. A.↗
DOE OSTI2022

Coupled effect of Cr and Al on interactions between a prismatic interstitial dislocation loop and an edge dislocation line in Fe-Cr-Al alloy

Segregation of alloying elements to a prismatic dislocation loop under irradiation is an important phenomenon in understanding the role of loops in radiation effects in alloys. In this work, various segregation sequences of Cr and Al atoms to a $\langle$100$\rangle$ and a 1/2 $\langle$111$\rangle$ prismatic dislocation loop in a Fe-Cr-Al alloy are explored using molecular dynamics method and ab initio energy calculation. Here, the results reveal that Cr can readily segregate to the loops while Al atoms cannot by themselves, but the segregated Cr atoms are able to promote Al segregation at the loops, defined as a coupled segregation of Cr and Al. After interacting with Cr and Al, a previously mobile 1/2 $\langle$111$\rangle$ loop becomes sessile. Al segregation through the coupled segregation process can further affect the pinning behavior of a dislocation loop to an edge dislocation motion. By varying the Al fraction in the segregated solutes, a nonlinear dependence of the pinning effect on dislocation motion is determined. At lower fractions, the pinning strength increases with the increasing Al fraction until Al fraction reaches a critical value of about 19%, above which the pinning strength decreases with further increase of Al fraction. All these results suggest that, in addition to the effect of Al on the surface resistance to oxidation, Al effect on the dislocation loop behavior is important to optimize the composition of Fe-Cr-Al alloys for their applications in accident tolerant fuel concepts.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Skyrmion dynamics and transverse mobility: skyrmion Hall angle reversal on 2D periodic substrates with dc and biharmonic ac drives

Here we numerically examine the dynamics of a skyrmion interacting with a two-dimensional periodic substrate under dc and biharmonic ac drives. We show that the Magnus force of the skyrmion produces circular orbits that can resonate with the ac drive and the periodicity of the substrate to create quantized motion both parallel and perpendicular to the dc drive. The skyrmion Hall angle exhibits a series of increasing and/or decreasing steps along with strongly fluctuating regimes. In the phase locked regimes, the skyrmion Hall angle is constant and the skyrmion motion consists of periodic orbits encircling an integer number of obstacles per every or every other ac drive cycle. We also observe phases in which the skyrmion moves at 90° with respect to the driving direction even in the presence of damping, a phenomenon called absolute transverse mobility that can exhibit reentrance as a function of dc drive. When the biharmonic ac drives have different amplitudes in the two directions, we find regimes in which the skyrmion Hall angle shows a sign reversal from positive to negative, as well as a reentrant pinning effect in which the skyrmion is mobile at low drives but becomes pinned at higher drives. These behaviors arise due to the combination of the Magnus force with the periodic motion of the skyrmions, which produce Shapiro steps, directional locking, and ratchet effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Manipulating ferroelectric behaviors via electron-beam induced crystalline defects

Ferroelectric nanoplates are attractive for applications in nanoelectronic devices. Defect engineering has been an effective way to control and manipulate ferroelectric properties in nanoscale devices. Defects can act as pinning centers for ferroelectric domain wall motion, altering the switching properties and domain dynamics of ferroelectrics. However, there is a lack of detailed investigation on the interactions between defects and domain walls in ferroelectric nanoplates due to the limitation of previous characterization techniques, which impedes the development of defect engineering in ferroelectric nanodevices. In this study, we applied in situ biasing transmission electron microscopy to explore how dislocation loops, which were judiciously introduced into barium titanate nanoplates via electron beam irradiation, affect the motion of ferroelectric domain walls. The results show that the motion was dramatically suppressed by these localized defects, because of the local strain fields induced by the defects. Additionally, the pinning effect can be further enhanced by multiple domain walls embedded with defect arrays. These results indicate the possibility of manipulating domain switching in ferroelectric nanoplates via the electron beam.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

In Situ Observation of Ion Migration in a Ferroelectric Ionic Conductor Rb-KTP during Thermal Annealing

Ion exchange in Rb-doped KTiOPO 4 has facilitated significant advancements in ferroelectric domain engineering, yet understanding the underlying mechanisms remains in its infancy. We perform time-of-flight secondary ion mass spectrometry analysis on multiple periodically ion-exchanged and periodically poled Rb-doped KTiOPO 4 samples under different temperatures and annealing durations. The results are compared between annealing in air, which involved ex situ annealing before periodic poling, and vacuum annealing conducted in situ after periodic poling. The Rb + diffusion profile after periodic ion exchange forms a tooth-shaped pattern. We show that in situ annealing causes a surface pinning effect on the nonpolar face, limiting Rb + migration along the polar axis at the surface. Once the pinned layer is removed through milling, the underlying Rb + diffusion is distinctively different from the surface. Additionally, the rate of Rb + diffusion during in situ annealing is linear, while the periodic domain structures remain stable after annealing. These results contribute to understanding the ionic diffusion process in a ferroelectric ionic conductor and using ion exchange to tailor the linear and nonlinear properties of KTiOPO 4 .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Vortex guidance and transport in channeled pinning arrays

Here, we numerically examine vortices interacting with pinning arrays where a portion of the pinning sites have been removed in order to create coexisting regions of strong and weak pinning. The region without pinning sites acts as an easy-flow channel. For driving in different directions with respect to the channel, we observe distinct types of vortex flow. When the drive is parallel to the channel, the flow first occurs in the pin free region followed by a secondary depinning transition in the pinned region. At high vortex densities there is also an intermediate plastic flow phase due to the coupling between the weak and strong pinning regions. For driving applied perpendicular to the channel, we observe a jammed phase in which vortices accumulate on the boundary of the pinned region due to the vortex-vortex repulsion, while at higher drives the vortices begin to flow through the pinning array. For driving at an angle to the channel, depending on the filling we observe a drive-induced reentrant pinning effect as well as negative differential mobility which occurs when vortices move from the unpinned to the pinned portion of the sample.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe 2 Nanosheet-Based Channels: Implications for Field-Effect Transistors

We report the fabrication of ohmic van der Waals (vdW) contacts to nearly intrinsic WSe 2 nanosheet-based channels in field-effect transistors (FETs) using degenerately p-doped MoS2 (p + -MoS2) as a contact metal. We demonstrate that accumulation-type ohmic contacts and the high device performance are achievable without electrostatically gating the drain/source contact regions despite the nearly intrinsic nature of WSe 2 . Back-gated WSe 2 FETs with p + -MoS 2 bottom contacts (which screen the back-gate electric field in the drain/source regions) exhibit linear output characteristics, a high on/off ratio of 10 8 , and a high two-terminal field-effect mobility up to ~200 cm2 V –1 s –1 at room temperature. Our theoretical modeling reveals that the p + -MoS 2 /WSe 2 vdW junction behaves like a metal/semiconductor ohmic contact signified by a vanishingly thin space-charge region of ~1 nm on the p + -MoS 2 side and a substantial accumulation layer of free holes on the WSe 2 side, which is further verified by additional temperature-dependent and dual-gated measurements of WSe 2 FETs. We attribute the formation of accumulation-type ohmic contacts free of a Schottky barrier to the near absence of Fermi-level pinning at the vdW interface and the work function of p + -MoS 2 being larger than the ionization energy of WSe 2 . This study represents an important step toward achieving low-resistance ohmic contacts to two-dimensional (2D) semiconductors by eliminating the Fermi-level pinning effects, which is expected to have significant implications for next-generation 2D semiconductor-based nanoelectronics.

36 MATERIALS SCIENCE↗