Search NASA⌕ Search

SEARCH · Search NASA

Results for “Pixel Array”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

High density pixel array

A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.

Wiener-Avnear, Eliezer↗
NASA NTRS2003

High density pixel array and laser micro-milling method for fabricating array

A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.

Wiener-Avnear, Eliezer↗
NASA NTRS2012

Development of Kilo-Pixel Arrays of Transition-Edge Sensors for X-Ray Spectroscopy

We are developing kilo-pixel arrays of transition-edge sensor (TES) microcalorimeters for future X-ray astronomy observatories or for use in laboratory astrophysics applications. For example, Athena/XMS (currently under study by the european space agency) would require a close-packed 32x32 pixel array on a 250-micron pitch with < 3.0 eV full-width-half-maximum energy resolution at 6 keV and at count-rates of up to 50 counts/pixel/second. We present characterization of 32x32 arrays. These detectors will be readout using state of the art SQUID based time-domain multiplexing (TDM). We will also present the latest results in integrating these detectors and the TDM readout technology into a 16 row x N column field-able instrument.

Adams, J. S.↗
NASA NTRS2018

The Impact of Transition Edge Sensor Design on Achievable Performance Uniformity of Kilo-Pixel Arrays

Future astronomy missions using x-ray transition-edge sensor (TES) microcalorimeters, such as X-IFU on Athena, will require large arrays of 1000s of pixels fabricated on a single wafer. To wire out so many pixels the current array designs have pixels with different rotational orientations. Fabrication is done in multiple layers and so, dependent on method, there is potential for spatial misalignment between layers. Because of the variation of orientation of pixels, misalignment may not impact each pixel equally. This has the potential to degrade the achievable uniformity of performance across an array. How well aligned do different layers need to be? How does sensitivity to misalignment depend on choice of pixel design?

Wakeham, Nicholas↗
NASA NTRS2003

Characterization of a 2-mm thick, 16x16 Cadmium-Zinc-Telluride Pixel Array

The detector under study is a 2-mm-thick, 16x16 Cadmium-Zinc-Telluride pixel array with a pixel pitch of 300 microns and inter-pixel gap of 50 microns. This detector is a precursor to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation. In addition, we discuss electric field modeling for this specific detector geometry and the role this mapping will play in terms of charge sharing and charge loss in the detector.

Gaskin, Jessica↗
NASA NTRS1995

Solid-state image sensor with focal-plane digital photon-counting pixel array

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

Fossum, Eric R.↗
NASA NTRS2007

Alternative Optimizations of X-ray TES Arrays: Soft X-rays, High Count Rates, and Mixed-Pixel Arrays

We are developing arrays of superconducting transition-edge sensors (TES) for imaging spectroscopy telescopes such as the XMS on Constellation-X. While our primary focus has been on arrays that meet the XMS requirements (of which, foremost, is an energy resolution of 2.5 eV at 6 keV and a bandpass from approx. 0.3 keV to 12 keV), we have also investigated other optimizations that might be used to extend the XMS capabilities. In one of these optimizations, improved resolution below 1 keV is achieved by reducing the heat capacity. Such pixels can be based on our XMS-style TES's with the separate absorbers omitted. These pixels can added to an array with broadband response either as a separate array or interspersed, depending on other factors that include telescope design and science requirements. In one version of this approach, we have designed and fabricated a composite array of low-energy and broad-band pixels to provide high spectral resolving power over a broader energy bandpass than could be obtained with a single TES design. The array consists of alternating pixels with and without overhanging absorbers. To explore optimizations for higher count rates, we are also optimizing the design and operating temperature of pixels that are coupled to a solid substrate. We will present the performance of these variations and discuss other optimizations that could be used to enhance the XMS or enable other astrophysics experiments.

Kilbourne, C. A.↗
NASA NTRS1997

Smart-Pixel Array Processors Based on Optimal Cellular Neural Networks for Space Sensor Applications

A smart-pixel cellular neural network (CNN) with hardware annealing capability, digitally programmable synaptic weights, and multisensor parallel interface has been under development for advanced space sensor applications. The smart-pixel CNN architecture is a programmable multi-dimensional array of optoelectronic neurons which are locally connected with their local neurons and associated active-pixel sensors. Integration of the neuroprocessor in each processor node of a scalable multiprocessor system offers orders-of-magnitude computing performance enhancements for on-board real-time intelligent multisensor processing and control tasks of advanced small satellites. The smart-pixel CNN operation theory, architecture, design and implementation, and system applications are investigated in detail. The VLSI (Very Large Scale Integration) implementation feasibility was illustrated by a prototype smart-pixel 5x5 neuroprocessor array chip of active dimensions 1380 micron x 746 micron in a 2-micron CMOS technology.

Fang, Wai-Chi↗
NASA NTRS2006

Electromagnetic Properties of Filled, Pixellated Arrays

Filled arrays of bolometers are currently being employed for use in astronomy from the far-infrared through millimeter parts of the electromagnetic spectrum. Because of the large range of wavelengths for which this is applicable, the number of modes supported by a bolometric pixel will vary according to specific application. Withington et al. (2003) have built a formalism for treating the electromagnetic properties of such bolometers by propagating the second order statistical properties of the radiation through a canonical optical system. In this work, we use this formalism to construct beam pattern images of square pixels for various ratios of p/lambda where p is the pixel size and lambda is the wavelength. In the low mode limit, the diffraction effects cause the beam pattern to be circular with a quadrupole dependence of Stokes Q and U. High mode cases approach the geometric limit. The polarization in these cases can be seen to trace the pixel edges. The effective size of the beam has a direct impact on the inter-pixel coupling and sets the number of independent detectors in an astronomical focal plane. This technique illustrates and quantifies the relationship between pixel size and angular resolution limits for a given wavelength and telescope. This is especially true in the limit of low p/lambda. In this case, the diffraction due to pixelization is non-negligible for the calculation of the overall angular resolution of the telescope. In addition, for instruments that are polarization sensitive, this method also provides a quantitative method for determining the contribution of the instrument to the measured polarization.

Chuss, David T.↗
NASA NTRS1983

Accuracy of measurement of star images on a pixel array

Algorithms are developed for predicting the accuracy with which the brightness of a star can be determined from its image on a digital detector array, as a function of the brightness of the background. The assumption is made that a known profile is being fitted by least squares. The two profiles used correspond to ST images and to ground-based observations. The first result is an approximate rule of thumb for equivalent noise area. More rigorous results are then given in tabular form. The size of the pixels, relative to the image size, is taken into account. Astronometric accuracy is also discussed briefly; the error, relative to image size, is very similar to the photometric error relative to brightness.

King, I. R.↗
NASA NTRS1997

Solid-state Image Sensor with Focal-plane Digital Photon-counting Pixel Array

A solid-state focal-plane imaging system comprises an NxN array of high gain. low-noise unit cells. each unit cell being connected to a different one of photovoltaic detector diodes, one for each unit cell, interspersed in the array for ultra low level image detection and a plurality of digital counters coupled to the outputs of the unit cell by a multiplexer(either a separate counter for each unit cell or a row of N of counters time shared with N rows of digital counters). Each unit cell includes two self-biasing cascode amplifiers in cascade for a high charge-to-voltage conversion gain (greater than 1mV/e(-)) and an electronic switch to reset input capacitance to a reference potential in order to be able to discriminate detection of an incident photon by the photoelectron (e(-))generated in the detector diode at the input of the first cascode amplifier in order to count incident photons individually in a digital counter connected to the output of the second cascade amplifier. Reseting the input capacitance and initiating self-biasing of the amplifiers occurs every clock cycle of an integratng period to enable ultralow light level image detection by the may of photovoltaic detector diodes under such ultralow light level conditions that the photon flux will statistically provide only a single photon at a time incident on anyone detector diode during any clock cycle.

Fossum, Eric R.↗
NASA NTRS1999

Active pixel sensor array with multiresolution readout

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

Fossum, Eric R.↗
NASA NTRS2013

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

Seshadri, Suresh↗
NASA NTRS2017

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

Seshadri, Suresh↗
NASA NTRS2002

Charge Sharing and Charge Loss in a Cadmium-Zinc-Telluride Fine-Pixel Detector Array

Because of its high atomic number, room temperature operation, low noise, and high spatial resolution a Cadmium-Zinc-Telluride (CZT) multi-pixel detector is ideal for hard x-ray astrophysical observation. As part of on-going research at MSFC (Marshall Space Flight Center) to develop multi-pixel CdZnTe detectors for this purpose, we have measured charge sharing and charge loss for a 4x4 (750micron pitch), lmm thick pixel array and modeled these results using a Monte-Carlo simulation. This model was then used to predict the amount of charge sharing for a much finer pixel array (with a 300micron pitch). Future work will enable us to compare the simulated results for the finer array to measured values.

Gaskin, J. A.↗
NASA NTRS2003

Charge Loss and Charge Sharing Measurements for Two Different Pixelated Cadmium-Zinc-Telluride Detectors

As part of ongoing research at Marshall Space Flight Center, Cadmium-Zinc- Telluride (CdZnTe) pixilated detectors are being developed for use at the focal plane of the High Energy Replicated Optics (HERO) telescope. HERO requires a 64x64 pixel array with a spatial resolution of around 200 microns (with a 6m focal length) and high energy resolution (< 2% at 60keV). We are currently testing smaller arrays as a necessary first step towards this goal. In this presentation, we compare charge sharing and charge loss measurements between two devices that differ both electronically and geometrically. The first device consists of a 1-mm-thick piece of CdZnTe that is sputtered with a 4x4 array of pixels with pixel pitch of 750 microns (inter-pixel gap is 100 microns). The signal is read out using discrete ultra-low-noise preamplifiers, one for each of the 16 pixels. The second detector consists of a 2-mm-thick piece of CdZnTe that is sputtered with a 16x16 array of pixels with a pixel pitch of 300 microns (inter-pixel gap is 50 microns). Instead of using discrete preamplifiers, the crystal is bonded to an ASIC that provides all of the front-end electronics to each of the 256 pixels. what degree the bias voltage (i.e. the electric field) and hence the drift and diffusion coefficients affect our measurements. Further, we compare the measured results with simulated results and discuss to

Gaskin, Jessica↗
NASA NTRS2000

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Kim, Q.↗