Sheath structure in a plasma diode
Sheath structure of plasma diode using kinetic theory model of plasma-sheath transition
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Sheath structure of plasma diode using kinetic theory model of plasma-sheath transition
Mercury or cadmium seeding effects on performance of cesium plasma diodes, obtaining plasma electron temperature from mathematical model
Elastic collisions in simulating one-dimensional plasma diodes on computer
Large amplitude oscillations with frequencies corresponding to ion transit times in thermal cesium plasma diodes with parallel plane construction
Direct current characteristic of cesium plasma diode - calculation method using computer program for computation of space charge equation
Cs plasma thermionic diode, using Penning effect for ionization rate increase via Hg or Cd seeding
Hg and Cd seeded Ce plasma wide-spaced diode without external light source investigated for Penning effect on diode performance
Mobility of positive ions of charge exchange collisions
Microscopic understanding of limitations of semi-classical phenomenological model of emitter surface of thermionic energy converter
Alternating current generation by plasma diode
Randomization of electron energies in one- dimensional thermionic converter by computer methods
Electric power system utilizing thermionic plasma diodes in parallel and heat pipes as cathodes
Electron-neutral elastic collisions in computer simulation of one-dimensional plasma diodes
It is known that the current of emitted electrons flowing through a plasma can saturate upon formation of a potential well adjacent to the cathode (the “space charge effect”). Here, we demonstrate another saturation mechanism that will often set a more restrictive limit on the global current. When “backflow saturation” occurs, the cathode sheath weakens to allow emitted electrons that already entered the plasma to backflow to the cathode. This effect could not be captured by studies modelling the cathode sheath by itself because its origin is coupled to processes in the interior plasma and anode sheath. By modeling a full plasma diode, we show that depending on conditions the global current can be limited in four ways; by backflow alone, by space charge alone, by both mechanisms in a stable cooperative form, or by both in a competing oscillatory form. Published by the American Physical Society 2025
Here, we report the characterization of microgap breakdown with perturbations from a metal rod floating between anode and cathode electrodes. The effects of the metal rod on the electric field distribution and the field enhancement factor are evaluated by numerical simulation and the conformal mapping method, and they indicate that the field emission regime is not reached. The breakdown voltages in the Townsend discharge regime are determined based on the voltage–current characteristics, which are obtained from two-dimensional fluid simulations. It is found that the breakdown characteristics can be significantly modulated by the floating metal rod, and the breakdown curve (breakdown voltage vs the net gap distance) is no longer U-shaped, which deviates from the conventional Paschen's law. The underlying physical mechanisms are related to the electric field enhancement, curved breakdown path, and nonuniform ion flux caused by the electric shielding effect. The results provide insights into breakdown characteristics in microscale discharges, which may promote conventional investigation of simplified clean gaps toward more complex conditions (e.g., with floating microparticles) in miniaturized plasma devices.
Current ringing in an Inductive Pulsed Plasma Thruster (IPPT) can lead to reduced energy efficiency, excess heating, and wear on circuit components such as capacitors and solid state devices. Clamping off the current using a fast turn-off power diode is an effective way to reduce current ringing and increase energy efficiency. A diode with a shorter reverse recovery time will allow the least amount of current to ring back through the circuit, as well as minimize switching losses. The reverse recovery response of a new 5.8 kilovolt SiC PiN diode from Cree, Inc. in the IPPT plasma drive circuit is investigated using a physicsbased Simulink model, and compared with that of a 5SDF 02D6004 5.5 kilovolt fast-switching Si diode from ABB. Parameter extraction was carried out for each diode using both datasheet specifications and experimental waveforms, in order to most accurately adapt the model to the specific device. Further experimental data will be discussed using a flat-plate IPPT developed at NASA Marshall Space Flight Center and used to verify the simulation results. A final quantitative measure of circuit efficiency will be described for both the Si and SiC diode configuration.
Coherent high-frequency oscillations near the electron plasma frequency are generated by electrodes with positive dc bias immersed in a uniform Maxwellian afterglow plasma. The instability occurs at the sheath-plasma resonance and is driven by a negative RF sheath resistance associated with the electron inertia in the diodelike electron-rich sheath. With increasing dc bias, i.e., electron transit time, the instability exhibits a hard threshold, downward frequency pulling, line broadening, and copious harmonics. The fundamental instability is a bounded oscillation caused by wave evanescence, but the harmonics are radiated as electromagnetic waves from the electrodes acting like antennas. Wavelength and polarization measurements confirm the emission process. Electromagnetic waves are excited by electrodes of various geometries (planes, cylinders, spheres), which excludes other radiation mechanisms such as orbitrons or beam-plasma instabilities. The line-broadening mechanism has been identified as a frequency modulation via the electron transit time by dynamic ions. Ion oscillations at the sheath edge give rise to burstlike RF emissions. These laboratory observations of a new instability are important for antennas in space plasmas, generation of coherent beams with diodes, and plasma diagnostics.