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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1964

Plasma Thermionic Diodes

Randomization of electron energies in one- dimensional thermionic converter by computer methods

ELECTRON ENERGY↗
NASA NTRS2014

Modeling and Simulation of a 5.8kV SiC PiN Diode for Inductive Pulsed Plasma Thruster Applications

Current ringing in an Inductive Pulsed Plasma Thruster (IPPT) can lead to reduced energy efficiency, excess heating, and wear on circuit components such as capacitors and solid state devices. Clamping off the current using a fast turn-off power diode is an effective way to reduce current ringing and increase energy efficiency. A diode with a shorter reverse recovery time will allow the least amount of current to ring back through the circuit, as well as minimize switching losses. The reverse recovery response of a new 5.8 kilovolt SiC PiN diode from Cree, Inc. in the IPPT plasma drive circuit is investigated using a physicsbased Simulink model, and compared with that of a 5SDF 02D6004 5.5 kilovolt fast-switching Si diode from ABB. Parameter extraction was carried out for each diode using both datasheet specifications and experimental waveforms, in order to most accurately adapt the model to the specific device. Further experimental data will be discussed using a flat-plate IPPT developed at NASA Marshall Space Flight Center and used to verify the simulation results. A final quantitative measure of circuit efficiency will be described for both the Si and SiC diode configuration.

Toftul, Alexandra↗
NASA NTRS1989

High-frequency instability of the sheath-plasma resonance

Coherent high-frequency oscillations near the electron plasma frequency are generated by electrodes with positive dc bias immersed in a uniform Maxwellian afterglow plasma. The instability occurs at the sheath-plasma resonance and is driven by a negative RF sheath resistance associated with the electron inertia in the diodelike electron-rich sheath. With increasing dc bias, i.e., electron transit time, the instability exhibits a hard threshold, downward frequency pulling, line broadening, and copious harmonics. The fundamental instability is a bounded oscillation caused by wave evanescence, but the harmonics are radiated as electromagnetic waves from the electrodes acting like antennas. Wavelength and polarization measurements confirm the emission process. Electromagnetic waves are excited by electrodes of various geometries (planes, cylinders, spheres), which excludes other radiation mechanisms such as orbitrons or beam-plasma instabilities. The line-broadening mechanism has been identified as a frequency modulation via the electron transit time by dynamic ions. Ion oscillations at the sheath edge give rise to burstlike RF emissions. These laboratory observations of a new instability are important for antennas in space plasmas, generation of coherent beams with diodes, and plasma diagnostics.

Stenzel, R. L.↗
NASA NTRS2013

Monitoring Temperature in High Enthalpy Arc-heated Plasma Flows using Tunable Diode Laser Absorption Spectroscopy

A tunable diode laser sensor was designed for in situ monitoring of temperature in the arc heater of the NASA Ames IHF arcjet facility (60 MW). An external cavity diode laser was used to generate light at 777.2 nm and laser absorption used to monitor the population of electronically excited oxygen atoms in an air plasma flow. Under the assumption of thermochemical equilibrium, time-resolved temperature measurements were obtained on four lines-of-sight, which enabled evaluation of the temperature uniformity in the plasma column for different arcjet operating conditions.

Martin, Marcel Nations↗
NASA NTRS2014

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency,eta(sub r), defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30%. The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle

Toftul, Alexandra↗