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At least 19 records

Polarons in Anisotropic Energy Bands

Calculation of polaron properties in anisotropic energy bands, and results for electron on spheroidal energy surface interacting with optical phonons

Kahn, A. H.

Polarons in anisotropic energy bands.

Polaron coupling approximation applied to electron-longitudinal optical phonon interaction on spheroidal energy band surface of strontium titanate

Kahn, A. H.

Lattice Distortion, Polaron Conduction, and Jahn-Teller Effect on teh Magnetoresistance of La(sub 0.7)Ca(sub 0.5)CoO(sub 3) Epitaxial Films

In summary, we have investigated the role of lattice distortion, polaron conduction and Jahn-Teller coupling in the occurrence of the colossal negative magnetoresistance in perovskite oxides. We conclude that larger lattice distortion gives rise to larger zero-field resistivity and larger magnitude of negative magnetoresistance.

colossal negative magnetoresistance CMR lattice di

Correlation of the Lattice Distortion and Polaron Conduction with the Physical Properties of La (sub 0.7)Ca(sub 0.3)MnO(sub 3) and La(sub 0.5)Ca(sub 0.5)CoO(sub 3) Epitaxial Films

The effects of lattice distortion on the physical properties of La (sub 0.7)Ca(sub 0.3)MnO(sub 3) and La(sub 0.5)Ca(sub 0.5)CoO(sub 3) films are investigated. Our results suggest that larger substrate-induced lattice distortion gives rise to larger zero-field resistivity and larger negative magnetoresistance.

lattice distortion epitaxial films lattice polaron

Effects of Lattice Distortion and Jahn-Teller Coupling on the Magnetoresistance of La(sub 0.7)Ca(sub 0.3)MnO(sub 3) and La(sub 0.5)Ca(sub 0.5)CoO(sub 3) Epitaxial Films

Studies of La(sub 0.7)Ca(sub 0.3)MnO(sub 3) epitaxial films on substrates with a range of lattice constants reveal two dominant contributions to the occurence of colossal negative magnetoresistance (CMR) in these manganites:...We therefore suggest that lattice polaron conduction associated with Jahn-Teller coupling is essential for the occurence of CMR, and that lattice distortion further enhances the CMR effect in the manganites.

lattice distortion epitaxial films lattice polaron

Refractory materials for high-temperature thermoelectric energy conversion

Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. ZT approx. 1 is not a theoretical limitation although, experimentally, values in excess of one were not achieved. Work has continued with emphasis on higher temperature energy conversion. A number of promising materials have been discovered in which it appears that ZT 1 is realizable. These materials are divided into two classes: (1) the rare-earth chalcogenides which behave as itinerant highly-degenerate n-type semiconductors at room-temperature, and (2) the boron-rich borides, which exhibit p-type small-polaronic hopping conductivity.

Wood, C.

Conduction mechanism in boron carbide

Electrical conductivity, Seebeck-coefficient, and Hall-effect measurements have been made on single-phase boron carbides, B(1-x)C(x), in the compositional range from 0.1 to 0.2 X, and between room temperature and 1273 K. The results indicate that the predominant conduction mechanism is small-polaron hopping between carbon atoms at geometrically inequivalent sites.

Wood, C.

Refractory materials for high-temperature thermoelectric energy conversion

Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimaiation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. ZT approx. 1 is not a theoretical limitation although, experimentally, values in excess of one were not achieved. Work has continued with emphasis on higher temperature energy conversion. A number of promising materials have been discovered in which it appears that ZT 1 is realizable. These materials are divided into two classes: (1) the rare-earth chalcogenides which behave as itinerant highly-degenerate n-type semiconductors at room-temperature, and (2) the boron-rich borides, which exhibit p-type small-polaronic hopping conductivity.

Wood, C.

Electronic transport properties of hot-pressed B6Si

Measurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300 K to -1300 K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.

Wood, C.

Charge transfer polarisation wave and carrier pairing in the high T(sub c) copper oxides

The High T(sub c) oxides are highly polarizable materials and are charge transfer insulators. The charge transfer polarization wave formalism is developed in these oxides. The dispersion relationships due to long range dipole-dipole interaction of a charge transfer dipole lattice are obtained in 3-D and 2-D. These are high frequency bosons and their coupling with carriers is weak and antiadiabatic in nature. As a result, the mass renormalization of the carriers is negligible in complete contrast to conventional electron-phonon interaction, that give polarons and bipolarons. Both bound and superconducting pairing is discussed for a model Hamiltonian valid in the antiadiabatic regime, both in 3-D and 2-D. The stability of the charge transfer dipole lattice has interesting consequences that are discussed.

Chakraverty, B. K.

The mechanism of high-T(sub c) superconductivity due to bound hole mediators: Relationship to ferroelectricity

The mediation by bound holes creating Cooper pairing in high T(sub c) superconductors has its origin in charge transfer excitations on the multivalence cation (virtual excitions) and in bound excitions or polarizations associated with the oxygen 2p electrons. These phenomena are produced and/or enhanced by a high internal electric field which is itself created by virtue of the unique crystal structures and polyhedral building blocks of high T(sub c) materials. The polarizations which can create oxygen holes (in addition to excitions) may be due to simply the internal electric field or to polaronic and electron-deficient bond behavior. This gives rise to two energy-dependent oxygen bands near the Fermi level. The magnitude and direction of the internal electric fields were calculated for Y1Ba2Cu3O(7-delta) (1-2-3) and show strong z-direction fields at the Cu(2), O2, and O3 sites and an even stronger -z direction field at the O4 site. The field calculations also show why electrical conductivity in the 1-2-3 material is essentially in the base plane of the CuO5 pyramid (the CuO2 plane).

Vezzoli, G. C.

Spin bipolaron in the framework of emery model for high-T(sub c) copper oxide superconductors

The high-T(sub c) oxide compounds discovered recently exhibit a number of interesting physical properties. Two-dimensional antiferromagnetic spin order has been observed in these materials at the oxygen deficiency. This fact can be explained by strong correlation of the spins, situated on Cu sites in the conducting planes of the oxide superconductors. The doping or the oxygen deficiency lead to the occurrence of holes, occupying the oxygen p-orbitals according to the Emery model. At the small hole concentration they can move along the antiferromagnetic lattice of spins, localized on Cu sites. Researchers consider the two holes situation and describe in what way their behavior depends on the antiferromagnetic exchange interation J. It is known that in the framework of Hubbard model with strong on-site Coulomb repulsion, a single hole can form a spin polaron of the large radius. It is reasonable to admit that two holes with parallel spins (triplet) form the spin bipolaron complex owing to the hole excitations' capability to polarize Cu spin surroundings. Such an excitation was considered in the phenomenological way. Here the problem is discussed on the basis of the microscopic approach in the framework of the variational principle. A special kind of wave function is used for such a purpose. The wave function is constructed by generalizing the trial functions proposed in over two holes excitation situation (triplet) and then the region of spin bipolaron existance in the framework of Emery model is studied. In this model the Hamiltonian can be easily rewritten by forming the oxygen states transforming as the irreducible representations of the group D(sub 4).

Golub, A. A.

Temperature dependence of the transient photoconductive response in stretched trans-polyacetylene films with below-gap excitation

The temperature dependence of the picosecond photocurrent with below-gap excitation (1.06 microns) has been measured for a highly oriented form of transpolyacetylene. The one-dimensional picosecond photocurrent is independent of temperature. The three-dimensional picosecond photocurrent is temperature dependent with an activation energy of 63 meV. These results demonstrate the photoproduction of nonlinear charged carriers (solitons and polarons) at energies that are below the principal interband absorption edge.

Walser, A. D.