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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The performance of the double-pulsed CuCl laser is improved by a decrease in the inductance of the dissociation pulse circuit. Higher efficiency is obtained due to a larger ground-state copper atom population and lower optimum dissociation energy.
Circuit technique uses a signal diode as a series current-pass element. Technique is applied to the design of a biased amplifier circuit and a nanosecond-pulse stretcher circuit.
Pulse shaper circuit exhibits low power dissipation, self setting, and easy triggering. It is basically a magnetic one-shot multivibrator consisting of two blocking oscillators and an inhibit circuit.
Gamma ray telescope design and operation including low power fast pulse transistor circuit techniques
Base-triggered avalanche transistor circuit used in a Marx bank pulser configuration provides voltage multiplication with nanosecond rise-time. The avalanche-mode transistors replace conventional spark gaps in the Marx bank. The delay time from an input signal to the output signal to the output is typically 6 nanoseconds.
Circuit was developed which can stretch pulses in 50- to 3200-ns range to make them acceptable for pulse-height analyzers. Circuit uses high-speed wide-band amplifier, does not need excessive frequency compensation, and can handle pulses one-tenth of width normally required by pulse analyzers.
Pulse-sequencing circuit uses only shift register and Exclusive-OR gates. Circuit also serves as date-transition edge detector (for rising or falling edges). It is used in sample-and-hold, analog-to-digital conversion sequence control, multiphase clock logic, precise delay control computer control logic, edge detectors, other timing applications, and provides simple means to generate timing and control signals for data transfer, addressing, or mode control in microprocessors and minicomputers.
Circuit generates an output pulse of fixed width from a variable width input pulse. The circuit consists of a tunnel diode in parallel with an inductance driven by a constant current generator. It is used for pulsed communication equipment design.
Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).
Variations of tunnel diode pulse generator circuits
A pulse-stretching circuit added to a conventional NOR gate circuit detects a preselected state and produces a pulse that the pulse stretcher maintains for a long enough period to reset all counter stages.
Simple circuit that uses a single transistor to accomplish capacitor storage followed by common-base switching supplies a pulse voltage, higher than that normally available from emitter-follower circuits, to drive a 100-watt transmitter.
RC transistor circuit to indicate each pulse of pulse train and occurrence of nth pulse
Pulse counting circuit with an extra chain of flip-flops, delay lines, and gates computes the sum of the squares of the pulse sequences. A pulse train and the sum of the squares of the pulses are simultaneously completed.
Circuit generates a pulse of high interval stability with a complexity level considerably below systems of comparable stability. This circuit is being used as a linear frequency discriminator in the signal conditioner of the Apollo command module.
Counter includes one section which counts the first several pulses, and a second section which counts pulses from a clock between the beginning of a sampling interval and the receipt of the first pulse by the circuit. The number of clock pulses indicates receipt time of the first pulse.
Digital data handling circuits for pulse amplifiers
Narrower, impedence-matched pulses initiate stabler electric discharges for gas lasers. Discharges are more efficient, more compact, capable of high repetition rate, and less expensive than conventional electron-beam apparatus, but gas tends to break down and form localized arcs. Pulse-shaping circuit compresses width of high-voltage pulses from relatively-slow rise-time voltage generator and gradually grades circuit impedance from inherent high impedance of generator to low impedence of gas.