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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Quantum geometry in quantum materials

Quantum geometry, characterized by the quantum geometric tensor, plays a central role in diverse physical phenomena in quantum materials. This pedagogical review introduces the concept and highlights its implications across multiple domains, including optical responses, Landau levels, fractional Chern insulators, superfluid weight, spin stiffness, exciton condensates, and electronphonon coupling. By integrating these topics, we emphasize the broad significance of quantum geometry in understanding emergent behaviors in quantum systems and conclude with an outlook on open questions and future directions.

Condensed-matter physics↗
DOE OSTI2025

Quantum geometry embedded in unitarity of evolution: Revealing its impacts as geometric oscillation and dephasing in spin resonance and crystal bands

Quantum Hall effects provide intuitive ways of revealing the topology in crystals, i.e., each quantized “step” represents a distinct topological state. Here, we seek a counterpart for “visualizing” quantum geometry, which is a broader concept. Here we show how geometry emerges in quantum as an intrinsic consequence of unitary evolution, composing a framework compatible with quantum metric and independent of specific details or approximations, suggesting quantum geometry may have widespread applicability. Indeed, we exemplify geometric observables, such as oscillation, dephasing, in magnetic resonance or band driving scenarios. Anomalies, supported by both analytic and numerical solutions, underscore the advantages of adopting a geometric perspective, potentially yielding distinguishable experimental signatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Probing electromagnetic nonreciprocity with quantum geometry of photonic states

Reciprocal and nonreciprocal effects in dielectric and magnetic materials provide crucial information about the microscopic properties of electrons. However, experimentally distinguishing the two has proven to be challenging, especially when the associated effects are extremely small. To this end, we propose a contactless detection using a cross-cavity device where a material of interest is placed at its center. We show that the optical properties of the material, such as Kerr and Faraday rotation, or birefringence, manifest in the coupling between the cavity's electromagnetic modes and in the shift of their resonant frequencies. By calculating the dynamics of a geometrical photonic state, we formulate a measurement protocol based on the quantum metric and quantum process tomography that isolates the individual components of the material's complex refractive index and minimizes the quantum mechanical Cramér-Rao bound on the variance of the associated parameter estimation. Our approach is expected to be applicable across a broad spectrum of experimental platforms including Fock states in optical cavities, or coherent states in microwave and THz resonators. Published by the American Physical Society 2025

Petrides, Ioannis (ORCID:0000000174842444)↗
DOE OSTI2025

Higher Vortexability: Zero-Field Realization of Higher Landau Levels

The rise of moiré materials has led to experimental realizations of integer and FCIs in small or vanishing magnetic fields. At the same time, a set of minimal conditions sufficient to guarantee an Abelian fractional state in a flat band were identified, namely “ideal" or “vortexable" quantum geometry. Such vortexable bands share essential features with the LLL, while excluding the need for more fine-tuned aspects such as flat Berry curvature. A natural and important generalization is to ask if such conditions can be extended to capture the quantum geometry of higher Landau levels, particularly the first (1LL), where non-Abelian states at ν = 1/2, 2/5 are known to be competitive. The possibility of realizing these states at zero magnetic field, and perhaps even more exotic ones, could become a reality if we could identify the essential structure of the 1LL in Chern bands. In this work, we introduce a precise definition of 1LL quantum geometry, along with a figure of merit that measures how closely a given band approaches the 1LL. Furthermore, periodically strained Bernal graphene is shown to realize such a 1LL structure even in zero magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Unconventional Fractional Phases in Multiband Vortexable Systems

We study topological flat bands with distinct features that deviate from conventional Landau level behavior. We show that even in the ideal quantum geometry limit, moiré flat band systems can exhibit physical phenomena fundamentally different from Landau levels without lattices. In particular, we find new fractional quantum Hall states emerging from multiband vortexable systems, where multiple exactly flat bands appear at the Fermi energy. While the set of bands as a whole exhibits ideal quantum geometry, individual bands separately lose vortexability, and thus making them very different from a stack of Landau levels. At certain filling fractions, we find fractional states whose Hall conductivity deviates from the filling factor. Through careful numerical and analytical studies, we rule out all known mechanisms—such as fractional quantum Hall crystals or separate filling of trivial and topological bands—as possible explanations. Leveraging the exact solvability of vortexable systems, we use analytic Bloch wave functions to uncover the origin of these new fractional states, which arises from the commensurability between the moiré unit cell and the magnetic unit cell of an emergent effective magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Discovery of an Intrinsic Antiferromagnetic Semiconductor EuSc 2 Te 4 With Magnetism‐Driven Nonlinear Transport

Magnetic topological materials have recently emerged as a promising platform for studying quantum geometry by the nonlinear transport in thin film devices. In this work, an antiferromagnetic (AFM) semiconductor EuSc₂Te₄ as the first bulk crystal that exhibits quantum geometry-driven nonlinear transport is reported. This material crystallizes into an orthorhombic lattice with AFM order below 5.2 K and a bandgap of less than 50 meV. The calculated band structure aligns with the angle-resolved photoemission spectroscopy spectrum. The AFM order preserves combined space-time inversion symmetry but breaks both spatial inversion and time-reversal symmetry, leading to the nonlinear Hall effect (NLHE). Nonlinear Hall voltage measured in bulk crystals appears at zero field, peaks near the spin-flop transition as the field increases, and then diminishes as the spin moments align into a ferromagnetic order. This field dependence, along with the scaling analysis of the nonlinear Hall conductivity, suggests that the NLHE of EuSc₂Te₄ involves contributions from quantum metric, in addition to extrinsic contributions, such as spin scattering and junction effects. Furthermore, this NLHE is found to have the functionality of broadband frequency mixing, indicating its potential applications in electronics. This work reveals a new avenue for studying magnetism-induced nonlinear transport in magnetic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Transverse photoresistivity from photothermal current deflection in metal films

Quantum geometry in centrosymmetric systems has motivated the search for photocurrent responses beyond second order. In particular, electric field-induced nonlinear responses may also enable intrinsic polarization-sensitive optical detectors. Despite numerous efforts, clear methods are still needed to remove experimental artifacts, separating intrinsic from extrinsic effects, and disentangling linear responses from their higher-order counterparts. Here, we provide a systematic study of fabrication and measurement techniques to remove external artifacts in photoelectronic responses. This reveals a previously hidden photothermoelectric response in the transverse photoresistivity of symmetric thin films of simple metals. We identify its origin in thermal gradients producing current deflection and determine the device design and measurement parameters to minimize extrinsic effects that arise in photoinduced electronic responses.

Bolometric effect↗
DOE OSTI2025

Microscopic signatures of topology in twisted MoTe 2

In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to various topological states of matter. The non-trivial band topology of twisted MoTe 2 , which is responsible for its fractional quantum anomalous Hall states, is predicted to arise from a skyrmion lattice texture in the layer pseudospin of the electronic wavefunctions. Tracing the layer polarization of wavefunctions within the moiré unit cell can, thus, offer insights into the band topology. Here we measure the out-of-plane component of the layer-pseudospin skyrmion textures of twisted MoTe 2 using scanning tunnelling microscopy and spectroscopy. We do this by simultaneously visualizing the moiré lattice structure and the spatial localization of its electronic states. We find that the wavefunctions associated with the topological flat bands exhibit a spatially dependent layer polarization within the moiré unit cell, in agreement with our theoretical modelling. Furthermore, our work enables future local probe studies of the intertwined correlated and topological states arising in gate-tunable devices.

Electronic properties and materials↗
DOE OSTI2024

Accessing bands with extended quantum metric in kagome Cs 2 Ni 3 S 4 through soft chemical processing

Flat bands that do not merely arise from weak interactions can produce exotic physical properties, such as superconductivity or correlated many-body effects. The quantum metric can differentiate whether flat bands will result in correlated physics or are merely dangling bonds. A potential avenue for achieving correlated flat bands involves leveraging geometrical constraints within specific lattice structures, such as the kagome lattice; however, materials are often more complex. In these cases, quantum geometry becomes a powerful indicator of the nature of bands with small dispersions. We present a simple, soft-chemical processing route to access a flat band with an extended quantum metric below the Fermi level. By oxidizing Ni-kagome material Cs 2 Ni 3 S 4 to CsNi 3 S 4 , we see a two orders of magnitude drop in the room temperature resistance. However, CsNi 3 S 4 is still insulating, with no evidence of a phase transition. Using experimental data, density functional theory calculations, and symmetry analysis, our results suggest the emergence of a correlated insulating state of unknown origin.

Science & Technology - Other Topics↗
DOE OSTI2025

Fractional quantization in insulators from Hall to Chern

The discovery of the integer and fractional quantum Hall effects naturally prompted the question of whether these effects can be realized without a magnetic field. Answering this is fundamentally important and requires a synthesis of the concepts of band topology, quantum geometry and electronic correlations. Here we summarize the basic concepts of both fractional Chern and fractional topological insulators and illustrate them with the theoretical lattice models that support the flat Chern bands in which the states were first predicted. We then examine their experimental realizations in twisted bilayer transition metal dichalcogenides and moiré rhombohedral few-layer graphene. Here, we also discuss the future challenges and opportunities in this research field.

Quantum Hall↗
DOE OSTI2024

Topological flat bands in a family of multilayer graphene moiré lattices

Moiré materials host a wealth of intertwined correlated and topological states of matter, all arising from flat electronic bands with nontrivial quantum geometry. A prominent example is the family of alternating-twist magic-angle graphene stacks, which exhibit symmetry-broken states at rational fillings of the moiré band and superconductivity close to half filling. Here, we introduce a second family of twisted graphene multilayers made up of twisted sheets of M- and N-layer Bernal-stacked graphene flakes. Calculations indicate that applying an electric displacement field isolates a flat and topological moiré conduction band that is primarily localized to a single graphene sheet below the moiré interface. Phenomenologically, the result is a striking similarity in the hierarchies of symmetry-broken phases across this family of twisted graphene multilayers. Our results show that this family of structures offers promising new opportunities for the discovery of exotic new correlated and topological phenomena, enabled by using the layer number to fine tune the flat moiré band and its screening environment.

Electronic properties and materials↗
DOE OSTI2025

Robust supermoiré pattern in large-angle single-twist bilayers

Forming long-wavelength moiré superlattices in van der Waals bilayers that have a small-angle twist between the two layers has been a key approach for creating moiré flat bands. However, for small twist angles, strong lattice reconstruction creates domain walls and other forms of disorder in the moiré pattern, posing considerable challenges for engineering such platforms. At large twist angles, the lattices are more rigid, but it is difficult to produce flat bands in shorter-wavelength moiré superlattices. Here, in this study, we introduce an approach for tailoring robust supermoiré structures in bilayers of transition-metal dichalcogenides using only a single twist near a commensurate angle. Structurally, we show the spontaneous formation of a periodic arrangement of three inequivalent commensurate moiré stackings, where the angle deviation from the commensurate angle determines the periodicity. Electronically, we reveal a large set of van Hove singularities that indicate strong band hybridization, leading to flat bands near the valence band maximum. Our study extends the study of the interplay among band topology, quantum geometry and moiré superconductivity to the large twist angle regime.

electronic properties and materials↗
DOE OSTI2025

Moiré-driven topological electronic crystals in twisted graphene

In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially filled band can break continuous translational symmetry and time-reversal symmetry spontaneously, resulting in a type of topological electron crystal known as an anomalous Hall crystal. Here we report signatures of a generalized version of the anomalous Hall crystal in twisted bilayer–trilayer graphene, whose formation is driven by the moiré potential. The crystal forms at a band filling of one electron per four moiré unit cells (ν = 1/4) and quadruples the unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and it can be switched reversibly between +1 and −1 by electric and magnetic fields. Several other topological electronic crystals arise in a modest magnetic field, originating from ν = 1/3, 1/2, 2/3 and 3/2. As a result, the quantum geometry of the interaction-modified bands is likely to be very different from that of the original parent band, which enables possible future discoveries of correlation-driven topological phenomena.

Electronic properties and materials↗
DOE OSTI2024

Semi-Dirac Fermions in a Topological Metal

Topological semimetals with massless Dirac and Weyl fermions represent the forefront of quantum materials research. In two dimensions, a peculiar class of fermions that are massless in one direction and massive in the perpendicular direction was predicted 16 years ago. These highly exotic quasiparticles—the semi-Dirac fermions—ignited intense theoretical and experimental interest but remain undetected. Using magneto-optical spectroscopy, we demonstrate the defining feature of semi-Dirac fermions— B 2 / 3 scaling of Landau levels—in a prototypical nodal-line metal ZrSiS. In topological metals, including ZrSiS, nodal lines extend the band degeneracies from isolated points to lines, loops, or even chains in the momentum space. With calculations and theoretical modeling, we pinpoint the observed semi-Dirac spectrum to the crossing points of nodal lines in ZrSiS. Crossing nodal lines exhibit a continuum absorption spectrum but with singularities that scale as B 2 / 3 at the crossing. Our work sheds light on the hidden quasiparticles emerging from the intricate topology of crossing nodal lines and highlights the potential to explore quantum geometry with linear optical responses. Published by the American Physical Society 2024

Shao, Yinming (ORCID:0000000228910028)↗
DOE OSTI2025

Topological Magneto-optics in the Noncoplanar Antiferromagnet Co 1/3 ⁢NbS 2 : Imaging and Writing Chiral Magnetic Domains

Despite its tiny net magnetization, the antiferromagnetic (AFM) van der Waals material Co 1/3 ⁢NbS 2 exhibits a large transverse Hall conductivity 𝜎 𝑥⁢𝑦 even at zero applied magnetic field, which arises, as recently shown, from the topological nature of its noncoplanar “tetrahedral” AFM order. Here, this triple-𝐪 magnetic order can be regarded as the short-length-scale limit of a magnetic skyrmion lattice and has an intrinsic spin chirality. Here, we show, using optical wavelengths spanning the ultraviolet to infrared (400–1000 nm), that magnetic circular dichroism provides an incisive optical probe of the topological AFM order in Co 1/3 ⁢NbS 2 . Measurements as a continuous function of photon energy are directly compared with first-principles calculations, revealing the influence of the underlying quantum geometry on optical conductivity. Leveraging the power and flexibility of optical methods, we use scanning magnetic circular dichroism microscopy to directly image chiral AFM domains and demonstrate writing of chiral AFM domains.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗