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Results for “Quantum transport”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Disordered quantum transport in quantum anomalous Hall insulator-superconductor junctions

In this work we numerically studied disordered quantum transport in a quantum anomalous Hall insulator-superconductor junction based on the effective edge model approach. In particular, we focus on the parameter regime with the mean-free path due to elastic scattering much smaller than the sample size and superconductor coherence length, and discuss disordered transport behavior in the presence of different numbers of chiral edge modes, as well as nonchiral metallic modes. Our numerical results demonstrate that the presence of multiple chiral edge modes or nonchiral metallic modes will lead to a strong Andreev conversion, giving rise to half-electron half-hole transmission through the junction structure, in sharp contrast to the suppression of Andreev conversion in the single chiral edge mode case. Finally, our results suggest the importance of additional transport modes in the quantum anomalous Hall insulator-superconductor junction and will guide future transport measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Few-mode and anisotropic quantum transport in InSb nanoribbons using an all-van der Waals material-based gate

High-quality electrostatic gating is a fundamental ingredient for successful semiconducting device physics, and a key element of realizing clean quantum transport. Inspired by the widespread improvement of transport quality when two-dimensional van der Waals (vdW) materials are gated exclusively by other vdW materials, we have developed a method for gating non-vdW materials with an all-vdW gate stack, consisting of a hexagonal boron nitride dielectric layer and a few-layer graphite gate electrode. We demonstrate this gating approach on MOVPE-grown InSb nanoribbons (NRs), a novel variant of the InSb nanowire, with a flattened cross-section. In our all-vdW gated NR devices we observe conductance features that are reproducible and have low- to near-zero gate hysteresis. We also report quantized conductance, which persists to lower magnetic fields and longer channel lengths than typical InSb nanowire devices reported to date. Additionally, we observe level splitting that is highly anisotropic in an applied magnetic field, which we attribute to the ribbon cross-section. The performance of our devices is consistent with the reduced disorder expected from the all-vdW gating scheme, and marks the first report of ballistic, few-modes quantum transport in a non-vdW material with an all-vdW gate. Our results establish all-vdW gating as a promising approach for high-quality gating of non-vdW materials for quantum transport, which is in principle applicable generically, beyond InSb systems. In addition, the work showcases the specific potential of all-vdW gate/InSb NR devices for enabling clean quantum devices that may be relevant for spintronics and topological superconductivity studies.

InSb↗
DOE OSTI2019

Signatures of Quantum Transport Steps in Bi{sub 2}Se{sub 3} Single Crystal

We report signatures of quantum magneto transport steps in a Bi{sub 2}Se{sub 3} single crystal. The Bi{sub 2}Se{sub 3} crystal is grown by self-flux method through solid-state reaction. Details of its structural analysis along with physical properties in terms of low temperature and high field transport, thermal (heat capacity), Raman, X-ray photo electron and angle resolved photo electron spectroscopy were reported earlier (J. Sup. Novel. Mag. 30, 2031 2017). In a present short letter, we show the details of its 2 K and up to 14 Tesla magneto transport, exhibiting quantum transport (QT) like steps above say 11 Tesla field. The possible QT steps cannot be modelled with the SdH (Shubnikov-de Haas) or other possible quantum oscillations. The observed QT like steps are possibly the result of the mixed out-of-plane R{sub xy}(H) and in-plane R{sub xx}(H) contributions from the misaligned [00l] planes of the studied crystal and this may happen with other studied topological insulator (TI) crystals as well. Our careful assessment of crystal XRD data shows the same.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Quantum transport response of topological hinge modes

Electronic topological phases are typified by the conducting surface states that exist on the boundary of an insulating three-dimensional bulk. While the transport response of the two-dimensional surface states has been studied, the quantum response of the one-dimensional hinge modes has not been demonstrated. Here we provide evidence for quantum transport in gapless topological hinge states existing within the insulating bulk and surface energy gaps in the intrinsic topological insulator α-Bi 4 Br 4 . Our magnetoresistance measurements reveal pronounced Aharonov–Bohm oscillations that are periodic in h/e (where h denotes Planck’s constant and e is the electron charge). The observed periodicity evinces quantum interference of electrons circumnavigating around the hinges. We also demonstrate that the h/e oscillations evolve as a function of magnetic field orientation, following the interference paths along the hinge modes that are allowed by topology and symmetry. Furthermore, our findings reveal the quantum transport response of topological hinge modes with both topological nature and quantum coherence, which can eventually be applied to the development of efficient topological electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Spin-orbit enabled quantum transport channels in a two-hole double quantum dot

We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map out the complete spectra of the two-hole system. By performing measurements in both source-drain voltage directions, at different detunings and magnetic fields, we carry out quantitative fitting to a Hubbard two-site model accounting for the tunnel coupling to the leads and the spin-flip relaxation process. We extract the singlet-triplet gap and the magnetic field corresponding to the singlet-triplet transition in the double-hole ground state. Additionally, at the singlet-triplet transition we find a resonant enhancement (in the blockaded direction) and suppression of current (in the conduction direction). The current enhancement stems from the multiple resonance of two-hole levels, opening several conduction channels at once. The current suppression arises from the quantum interference of spin-conserving and spin-flipping tunneling processes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Quantum transport properties of monolayer graphene with antidot lattice

Quantum transport properties in monolayer graphene are sensitive to structural modifications. In this work we find that the introduction of a hexagonal lattice of antidots has a wide impact on weak localization and Shubnikov-de Haas (SdH) oscillation of graphene. The antidot lattice reduces both phase coherence and intervalley scattering length. Remarkably, even with softened intervalley scattering, i.e., the phase-breaking time is shorter than intervalley scattering time, coherence between time reversed states remains adequate to retain weak localization, an offbeat and rarely reported occurrence. Whereas SdH oscillation is boosted by the antidot lattice, the amplitude of the SdH signal rises rapidly with the increasing antidot radius. But both effective mass and carrier density are reduced in a larger antidot lattice. A bandgap of ~10 meV is opened. The antidot lattice is an effective dopant-free way to manipulate electronic properties in graphene.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Quasiballistic quantum transport through Ge/Si core/shell nanowires

We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry–Pérot interference patterns as well as conductance plateaus at integer multiples of 2e 2 /h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Landé g-factors. Ballistic effects are observed in nanowires with silicon shell thickness of 1–3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic sub-band-resolved transport.

42 ENGINEERING↗
DOE OSTI2017

Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi 2

Relativistic fermions in topological quantum materials are characterized by linear energy–momentum dispersion near band crossing points. Under magnetic fields, relativistic fermions acquire Berry phase of π in cyclotron motion, leading to a zeroth Landau level (LL) at the crossing point, a signature unique to relativistic fermions. Here we report the unusual interlayer quantum transport behavior resulting from the zeroth LL mode observed in the time reversal symmetry breaking type II Weyl semimetal YbMnBi2. The interlayer magnetoresistivity and Hall conductivity of this material are found to exhibit surprising angular dependences under high fields, which can be well fitted by a model, which considers the interlayer quantum tunneling transport of the zeroth LL's Weyl fermions. Our results shed light on the unusual role of zeroth LLl mode in transport.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1989

Inhibition of quantum transport due to 'scars' of unstable periodic orbits

A new quantum mechanism for the suppression of chaotic ionization of highly excited hydrogen atoms explains the appearance of anomalously stable states in the microwave ionization experiments of Koch et al. A novel phase-space representation of the perturbed wave functions reveals that the inhibition of quantum transport is due to the selective excitation of wave functions that are highly localized near unstable periodic orbits in the chaotic classical phase space. The 'scarred' wave functions provide a new basis for the quantum description of a variety of classically chaotic systems.

Jensen, R. V.↗
DOE OSTI2018

Locality Bound for Dissipative Quantum Transport

We prove an upper bound on the diffusivity of a dissipative, local, and translation invariant quantum Markovian spin system: D ≤ D 0 + (αv LRτ + βξ)v C . Here vLR is the Lieb-Robinson velocity, vC is a velocity defined by the current operator, τ is the decoherence time, ξ is the range of interactions, D0 is a decoherence-induced microscopic diffusivity, and α and β are precisely defined dimensionless coefficients. The bound constrains quantum transport by quantities that can either be obtained from the microscopic interactions (D 0 , v LR , v C , ξ) or else determined from independent local nontransport measurements (τ, α, β). We illustrate the general result with the case of a spin-half XXZ chain with on-site dephasing. Furthermore, our result generalizes the Lieb-Robinson bound to constrain the sub-ballistic diffusion of conserved densities in a dissipative setting.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Quantum Transport and Non-Hermiticity on Flat-Band Lattices

We investigate quantum transport in a flat-band lattice induced in a twisted cross-stitch lattice with Hermitian or non-Hermitian potentials, with a combination of parity and time-reversal symmetry invariant. In the given system, the transmission probability demonstrates a resonant behavior on the real part of the energy bands. Both of the potentials break the parity symmetry, which lifts the degeneracy of the flat and dispersive bands. In addition, non-Hermiticity conserving PT-symmetry induces a transition between the unbroken and broken PT-symmetric phases through exceptional points in momentum space. Characteristics of non-Hermitian and Hermitian bandgaps are distinguishable: The non-Hermitian bandgap is induced by separation toward complex energy, while the Hermitian bandgap is caused by the expelling of available states into real energy. Deviation of the two bandgaps follows as a function of the quartic power of the induced potential. It is notable that non-Hermiticity plays an important role in the mechanism of generating a bandgap distinguishable from a Hermitian bandgap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Signature of nodal topology in nonlinear quantum transport across junctions in Weyl and multi-Weyl semimetals

We investigate quantum transport through a rectangular potential barrier in Weyl semimetals (WSMs) and multi-Weyl semimetals (MSMs), within the framework of Landauer-Büttiker formalism. Here, our study uncovers the role of nodal topology imprinted in the electric current and the shot noise. We find that, in contrast to the finite odd-order conductance and noise power, the even-order contributions vanish at the nodes. Additionally, depending on the topological charge ($J$), the linear conductance ($G_1$) scales with the Fermi energy ($E_F$) as $G^{E_F>U}_{1}$ $∝$ $E^{2/J}_{F}$, $U$ being the barrier height. We demonstrate that the $E_F$ dependence of the second-order conductance and shot noise power could quite remarkably distinguish an MSM from a WSM depending on the band topology, and may induce several smoking gun experiments in nanostructures made out of WSMs and MSMs. Analyzing shot noise and Fano factor, we show that the transport across the rectangular barrier follows the sub-Poissonian statistics. Interestingly, we obtain universal values of Fano factor at the nodes unique to their topological charges. The universality for a fixed $J$, however, indicates that only a fixed number of open channels participate in the transport through evanescent waves at the nodes. The proposed results can serve as a potential diagnostic tool to identify different topological systems in experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Probing and Understanding the Spatial and Energy Distributions of Plasmonic Hot Carriers via Single-Molecule Quantum Transport

The generation of hot carriers in plasmonic nanostructures offers new transformative opportunities for a range of applications, including solar energy harvesting, photochemistry, and photodetection. To better understand such phenomena, this project aims to develop an experimental approach to study and understand hot carrier distributions in photoexcited plasmonic nanostructures. The developed experimental approach, combining scanning probe-based single-molecule quantum transport measurements with plasmonic excitation methods, leverages nanoscopic single molecules as quantum energy filters to selectively access hot carriers in a variety of plasmonic nanostructures. This report summarizes the key outcomes, impacts, and lessons learned in the first two years of the project. Over the past two years, important progress was made in achieving the project's goals, including the development of the scanning probe-based experimental platform, fabrication of plasmonic nanostructures, and design and synthesis of the desired molecular candidates. Insights from this research will pave the path toward the development of technologies that will improve the way we harvest solar energy and drive chemical reactions and ultimately help transition the U.S. to a clean and sustainable society.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

Hofstadter butterfly and quantum transport benchmarks in PVA-exfoliated graphene heterostructures

Polymer exposure during van der Waals heterostructure fabrication is widely regarded as compromising the integrity of the electronic system required for hosting emergent quantum physics. This assumption has persisted largely because electronic benchmarking of heterostructures from polymer-exposed graphene has remained limited to only foundational transport metrics, such as mobility and charge inhomogeneity. Here, we challenge this assumption by establishing that graphene heterostructures produced by polyvinyl alcohol (PVA)-assisted exfoliation and encapsulated in hexagonal boron nitride using elevated-temperature lamination satisfy demanding quantum transport benchmarks. Beyond exhibiting ultra-high mobility and ballistic transport, these heterostructures yield quantum scattering times comparable to the best polymer-free devices. Most demanding of all, moiré superlattices from PVA-exposed graphene exhibit Hofstadter butterfly spectra, confirming spatially uniform interlayer coupling across the device area. These results establish that PVA exposure is compatible with low-disorder electronic systems, relaxing the trade-off between scalable fabrication and low-disorder quantum transport. This study motivates further development of polymer-assisted assembly with engineered residue-removal protocols.

36 MATERIALS SCIENCE↗