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Results for “RADIATION RESISTANCE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Reassembled nanoprecipitates resisting radiation

Outstanding resistance to destructive radiation damage in structural alloys is realized by ultra-high-density reversible nanoprecipitate inclusions, and the improvement is attributed to the reordering process of low-misfit superlattices in highly supersaturated matrices.

36 MATERIALS SCIENCE↗
NASA NTRS1972

Radiation resistance of a baffled beam.

The radiation resistance of a beam is theoretically determined from the total acoustic power radiated into the farfield. The beam is supported in an infinite baffle, with both hinged and clamped supports considered. Asymptotic solutions are derived for frequencies well below the critical frequency. Curves, covering the entire frequency range between the low- and high-frequency asymptotic solutions, are obtained through numerical integration for the first ten modes of beams with various width-to-length ratios. For frequencies well below the critical frequency, the ratio of the radiation resistance of a beam clamped at each end to that of a beam hinged at each end is 0.851 for the first mode, 0.711 for the second mode, and asymptotically approaches 2 as the mode number tends to infinity. For both hinged and clamped supports, the radiation resistance of all modes increases with the beam width-to-length ratio.

Wallace, C. E.↗
NASA NTRS1972

Radiation resistance of a rectangular panel.

The radiation resistance corresponding to the natural modes of a finite rectangular panel is theoretically determined from the total energy radiated to the farfield. The panel is assumed to be simply supported in an infinite baffle. Asymptotic solutions for the low-frequency region are derived, and curves covering the entire frequency range for various mode shapes and aspect ratios are obtained through numerical integration. When the ratio of the acoustic wavenumber to the panel wavenumber is a constant much less than unity, the radiation resistance for all modes is a minimum if the intranodal area (the area between adjacent node lines) is square, and increases with the aspect ratio of the intranodal area.

Wallace, C. E.↗
NASA NTRS1988

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

Weinberg, I.↗
NASA NTRS1988

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

The radiation resistance of ITO/InP cells processed by dc magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistances significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectrosocpy, and determinations of surface conductivity type are used to investigate the configuration of the ITO/InP cells. It is concluded that these latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

Weinberg, I.↗
NASA NTRS2011

Radiation-Resistant Hybrid Lotus Effect for Achieving Photoelectrocatalytic Self-Cleaning Anticontamination Coatings

An experiment involving radiation-resistant hydrophobic coatings is planned for space exposure and experimental testing on the International Space Station (ISS) in 2011. The Lotus biocide coatings are designed for supporting space exploration missions. This innovation is an antibacterial, anti-contamination, and self-cleaning coating that uses nano-sized semiconductor semimetal oxides to neutralize biological pathogens and toxic chemicals, as well as to mitigate dust accumulation (see figure). The Lotus biocide coating is thin (approximately microns thick), lightweight, and the biocide properties will not degrade with time or exposure to biological or chemical agents. The biocide is stimulated chemically (stoichiometric reaction) through exposure to light (photocatalysis), or by an applied electric field (electrocatalysis). The hydrophobic coating samples underwent preliminary high-energy proton and alpha-ray (helium ion) irradiations at the Lawrence Berkeley National Laboratory 88" cyclotron and demonstrated excellent radiation resistance for a portion of the Galactic Cosmic Ray (GRC) and Solar Proton spectrum. The samples will undergo additional post-flight studies when returned to Earth to affirm further the radiation resistance properties of the space exposed coatings.

Taylor, Edward W.↗
NASA NTRS1984

Increased radiation resistance in lithium-counterdoped silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells are found to exhibit significantly increased radiation resistance to 1-MeV electron irradiation when compared to boron-doped n(+)p silicon solar cells. In addition to improved radiation resistance, considerable damage recovery by annealing is observed in the counterdoped cells at T less than or equal to 100 C. Deep level transient spectroscopy measurements are used to identify the defect whose removal results in the low-temperature aneal. It is suggested that the increased radiation resistance of the counterdoped cells is primarily due to interaction of the lithium with interstitial oxygen.

Weinberg, I.↗