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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Radial radio frequency (RF) electron guns

Radial radio frequency (RF) electron guns and radial RF electron gun systems are provided that are capable of generating an electron beam that can propagate either radially inward, towards the axis of a cylinder, or radially outward from the axis. A beam source capable of generating a radially inwardly propagating electron beam, while perhaps not particularly useful as a source for a higher-energy accelerator, offers potential advantages for materials processing, as the geometry allows irradiation from all sides of an enclosed material flow with a single structure. Other potential applications include, but are not limited to, atmospheric plasma generation, radiation damage testing, and possibly, novel electron lens-type devices for hadron accelerators.

Lewellen, John↗

Turbulent Model of Crab Nebula Radiation

We construct a turbulent model of the Crab Nebula's nonthermal emission. The present model resolves a number of long-standing problems of the Kennel–Coroniti model: (i) the sigma problem, (ii) the hard spectrum of radio electrons, (iii) the high peak energy of gamma-ray flares, (iv) and the spatial evolution of the infrared (IR) emission. The Nebula contains two populations of injected particles: Component-I, accelerated at the wind termination shock via the Fermi-I mechanism; and Component-II, accelerated in reconnecting turbulence in highly magnetized (σ >> 1) plasma in the central part of the Crab Nebula. The reconnecting turbulence in Component-II extends from radio to gamma-rays: it accelerates radio electrons with a hard spectrum, destroys the large-scale magnetic flux (and thus resolves the sigma problem), and occasionally produces gamma-ray flares (from the largest-scale reconnection events). The model reproduces the broadband spectrum of the Crab Nebula, from low-frequency synchrotron emission in radio to inverse-Compton emission at TeV energies, as well as the spatially resolved evolution of the spectral indices in the IR and optical bands.

79 ASTRONOMY AND ASTROPHYSICS↗

Application of a radial radio-frequency electron gun to waste treatment

Electron-beam irradiation has been shown to be a clean, efficient, and effective technique for treating a variety of contaminants in a variety of media. In particular, the ionizing radiation produced by an electron beam can effectively decontaminate wastewater and aid in removing harmful chemicals from industrial flue gas. In this paper, we investigate a novel technique for waste treatment using an electron-beam system in which an (approximately) annular beam converges radially into the treatment volume. We provide preliminary system-level analysis of the design of a radial electron gun, and we discuss hypothetical system constructs in which a radial electron gun is used for treatment of flue gas and wastewater. We derive dose uniformity, throughput rates, and other important treatment parameters for each application. Our results suggest that a lower-energy system with a large-radius cylindrical treatment volume is preferable for flue gas treatment, whereas a higher-energy system with an annular treatment volume is better-suited for wastewater treatment.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

Epitaxy of Beta-Ga2O3 on Highly-Offcut (Greater than 10 Degrees) Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction.1 These films show step-flow growth from (-201) step-edges and high electron mobility. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (4.8 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe 100% reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3.

36 MATERIALS SCIENCE↗

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗

Experimental Demonstration of Hadron Beam Cooling Using Radio-Frequency Accelerated Electron Bunches

Cooling of beams of gold ions using electron bunches accelerated with radio-frequency systems was recently experimentally demonstrated in the Relativistic Heavy Ion Collider at Brookhaven National Laboratory. Such an approach is new and opens the possibility of using this technique at higher energies than possible with electrostatic acceleration of electron beams. The challenges of this approach include generation of electron beams suitable for cooling, delivery of electron bunches of the required quality to the cooling sections without degradation of beam angular divergence and energy spread, achieving the required small angles between electron and ion trajectories in the cooling sections, precise velocity matching between the two beams, high-current operation of the electron accelerator, as well as several physics effects related to bunched-beam cooling. Here we report on the first demonstration of cooling hadron beams using this new approach.

43 PARTICLE ACCELERATORS↗

Interpreting Crab Nebula’s synchrotron spectrum: two acceleration mechanisms

ABSTRACT We outline a model of the Crab pulsar wind nebula with two different populations of synchrotron emitting particles, arising from two different acceleration mechanisms: (i) Component-I due to Fermi-I acceleration at the equatorial portion of the termination shock, with particle spectral index pI ≈ 2.2 above the injection break corresponding to γwindσwind ∼ 105, peaking in the ultraviolet (UV, γwind ∼ 102 is the bulk Lorentz factor of the wind, σwind ∼ 103 is wind magnetization); and (ii) Component-II due to acceleration at reconnection layers in the bulk of the turbulent Nebula, with particle index pII ≈ 1.6. The model requires relatively slow but highly magnetized wind. For both components, the overall cooling break is in the infrared at ∼0.01 eV, so that the Component-I is in the fast cooling regime (cooling frequency below the peak frequency). In the optical band, Component-I produces emission with the cooling spectral index of αo ≈ 0.5, softening towards the edges due to radiative losses. Above the cooling break, in the optical, UV, and X-rays, Component-I mostly overwhelms Component-II. We hypothesize that acceleration at large-scale current sheets in the turbulent nebula (Component-II) extends to the synchrotron burn-off limit of ϵs ∼ 100 MeV. Thus in our model acceleration in turbulent reconnection (Component-II) can produce both hard radio spectra and occasional gamma-ray flares. This model may be applicable to a broader class of high-energy astrophysical objects, like active galactic nuclei and gamma-ray burst jets, where often radio electrons form a different population from the high-energy electrons.

79 ASTRONOMY AND ASTROPHYSICS↗

Electron dynamics in radio frequency magnetron sputtering argon discharges with a dielectric target

Abstract We demonstrate a self-consistent and complete description of electron dynamics in a typical electropositive radio frequency magnetron sputtering (RFMS) argon discharge with a dielectric target. The electron dynamics, including the electron power absorption dynamics in one radio frequency (RF) period, is studied via a fully kinetic 2d3v particle-in-cell/Monte Carlo collision (PIC/MCC) electrostatic simulation. The interplay between the fundamental plasma parameters is analyzed through their spatiotemporal dynamics. Due to the influence of magnetic trap on the electron transport, a spatially dependent charging that perturbs the electric potential is observed on the dielectric target surface, resulting in a spatially dependent ion energy distribution along the target surface. The E × B drift-to-discharge current ratio is in approximate agreement with Bohm diffusion. The electron power absorption can be primarily decoupled into the positive Ohmic power absorption in the bulk plasma region and the negative pressure-induced power absorption near the target surface. Ohmic power absorption is the dominant electron power absorption mechanism, mostly contributed by the azimuthal electron current. The power absorption due to electron inertial effects is negligible on time-average. Both the maximum power absorption and dissipation of electrons appear in the bulk plasma region during the second half of the RF period, implying a strong electron trapping in magnetron discharges. The contribution of secondary electrons is negligible under typical RFMS discharge conditions.

Physics↗

PART 2: Initial Beam Dynamics Results of an Integrated and Compact 1.3 GHZ Superconducting Radio Frequency (SRF) Electron Source

This paper is the continuation of a technical paper which is called “Detailed Electromagnetic Design of an Integrated and Compact 1.3 GHz Superconducting Radio Frequency (SRF) Electron Source” [1]. In the previous paper, we examined if a promising RF electromagnetic design of the gun and cathode region could be achieved. Further, we examined if this gun region could be fully integrated, in terms of the electromagnetic RF design, with the rest of the accelerator, keeping in mind the overall goal of compactness and reduction of duplicative infrastructure commonly associated with separated function electron guns and structures. While we convinced ourselves thus far that the RF electromagnetic design of our concept is feasible, we also needed to perform particle tracking to assess the beam properties through the entire system, understand and remediate any beam loss. For this step, we examined the cathode region and analyzed the gating process of the thermionic cathode, as losses would most likely be attributed to releasing electrons into the accelerating structure during an unfavorable phase window.

43 PARTICLE ACCELERATORS↗

SLAC Microresonator Radio Frequency (SMuRF) Electronics for Read Out of Frequency-Division-Multiplexed Cryogenic Sensors

Large arrays of cryogenic sensors for various imaging applications ranging across x-ray, gamma-ray, cosmic microwave background, mm/sub-mm, as well as particle detection increasingly rely on superconducting microresonators for high multiplexing factors. These microresonators take the form of microwave SQUIDs that couple to transition-edge sensors or microwave kinetic inductance detectors. In principle, such arrays can be read out with vastly scalable software-defined radio using suitable FPGAs, ADCs and DACs. In this work, we share plans and show initial results for SLAC Microresonator Radio Frequency (SMuRF) electronics, a next-generation control and readout system for superconducting microresonators. SMuRF electronics are unique in their implementation of specialized algorithms for closed-loop tone tracking, which consists of fast feedback and feedforward to each resonator’s excitation parameters based on transmission measurements. Closed-loop tone tracking enables improved system linearity, a significant increase in sensor count per readout line, and the possibility of overcoupled resonator designs for enhanced dynamic range. Low-bandwidth prototype electronics were used to demonstrate closed-loop tone tracking on twelve 300-kHz-wide microwave SQUID resonators, spaced at ~ 6 MHz with center frequencies ~ 5–6 GHz. We achieve multi-kHz tracking bandwidth and demonstrate that the noise floor of the electronics is subdominant to the noise intrinsic in the multiplexer.

47 OTHER INSTRUMENTATION↗

Part 1: Detailed Electromagnetic Design of an Integrated and Compact 1.3 GHZ Superconducting Radio Frequency (SRF) Electron

There exists a need for compact, reliable, high-power electron sources for applications including those in water treatment, basic science, defense, and security. There also exists a need for compact electron-beam based light and power sources of various power levels and at different frequencies (mm-wave to gamma rays) for applications also in the fields of basic science, industry, and defense and security. Today’s examples of high-average-power electron sources are neither very compact nor highly efficient. The same may be said for many of the electron-beam based light sources operated worldwide for myriad of applications. Recent breakthroughs in superconducting (SC) materials technology, radio-frequency (RF) power systems, specialized cathodes, and RF cavity designs offer ways to overcome the above-mentioned shortcomings. In this report, all these new features are integrated in a comprehensive design into one promising concept for a compact superconducting RF (SRF) high-average power electron linear accelerator. This design is capable of 5-50 kW average electron beam power and continuous wave operation with the corresponding electron beam energy up to 10 MeV.

43 PARTICLE ACCELERATORS↗

Suprathermal electron transport studies in radio-frequency-heated tokamak plasmas

This contribution reports on the study of suprathermal electron radial transport enhancement in the presence of electron-heating radio-frequency waves, such as electron-cyclotron waves or lower-hybrid waves. Since suprathermal electrons emit hard X-rays from Bremsstrahlung, experimental data from hard X-ray measurements are used to follow their dynamics. In particular, electron-cyclotron power modulation experiments performed in TCV show that this transport depends on the total electron-cyclotron power. These results are corroborated by experimentally constrained Fokker-Planck simulations [J. Cazabonne et al, Plasma Phys. Control. Fusion 65, 104001 (2023)]. Similar experiments have been performed in WEST with lower-hybrid waves, and are reported for the first time. Preliminary analyses show potential evidence of suprathermal electron transport, but no clear dependence on wave power nor photon energy at this stage.

Cazabonne, Jean [CEA, IRFM, Saint Paul Lez Durance↗

Frontiers in the Application of RF Vacuum Electronics

The application of radio frequency (RF) vacuum electronics for the betterment of the human condition began soon after the invention of the first vacuum tubes in the 1920s and has not stopped since. Today, microwave vacuum devices are powering important applications in health treatment, material and biological science, wireless communication-terrestrial and space, Earth environment remote sensing, and the promise of safe, reliable, and inexhaustible energy. This article highlights some of the exciting application frontiers of vacuum electronics.

42 ENGINEERING↗

Electron Transport Properties of Al x Ga 1 – x N / Ga N Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations

High-electron-mobility transistors (HEMTs) based on Al x Ga 1–x N/GaN heterostructures have great potential for applications in power electronics and radio frequency applications. Operating under large bias and electric fields, hot electrons are present in the channel where they can activate preexisting benign defects that cause scattering or carrier trapping, resulting in device degradation, such as threshold-voltage shifts and transconductance degradation. We report a comprehensive investigation of the electron transport properties of wurtzite-phase GaN and AlN and of an Al 0.25 Ga 0.75 N/GaN HEMT by solving the Boltzmann transport equation with a synchronous ensemble Monte Carlo technique and employing first-principles electronic properties, including the full energy bands, phonon dispersions, and electron-phonon scattering rates. We find that, for electron collisions with the highest-energy optical phonon mode, nonpolar scattering by optical phonons contributes comparable to polar scattering. Polar scattering with acoustic phonons, that is, piezoelectric scattering, is found to be as important as the polar scattering with optical phonons for low-energy electrons at room temperature. Here, we compare the calculated high-field transport characteristics of bulk GaN with previously reported results. We also calculate the nonpolar acoustic deformation potential, nonpolar optical deformation potential, and high-field transport characteristics of bulk AlN. We find that inclusion of piezoelectric scattering results in a low-field electron mobility of approximately 450cm 2 /(V s), which is very close to the experimental value. Simulation results are presented for an Al 0.25 Ga 0.75 N/GaN HEMT, including electric field, average carrier kinetic energy, and drift velocity in the channel. Finally, we present the carrier energy distribution function in the conducting channel, which is key to accurately determine hot-carrier-caused device degradation and identify possible routes to an improved device design.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

IGR J18249−3243: a new GeV-emitting FR II and the emerging population of high-energy radio galaxies

ABSTRACT The advent of new all-sky radio surveys such as the VLA Sky Survey and the Rapid ASKAP Continuum Survey, performed with the latest generation radio telescopes, is opening new possibilities on the classification and study of extragalactic γ-ray sources, specially the underrepresented ones like radio galaxies. In particular, the enhanced sensitivity (sub-mJy level) and resolution (a few arcsec) provides a better morphological and spectral classification. In this work, we present the reclassification of a Fermi/Large Area Telescope (LAT) source as a new Fanaroff–Riley II radio galaxy from the International Gamma-Ray Astrophysics Laboratory sample found to emit at GeV energies. Through a broad-band spectral fitting from radio to γ-ray, we find that the commonly invoked jet contribution is not sufficient to account for the observed γ-ray flux. Our modelling suggests that the observed emission could mainly originate in the lobes (rather than in the radio core) by inverse Compton scattering of radio-emitting electrons off the ambient photon fields. In addition, we cross-correlated the latest generation radio surveys with a list of Fermi/LAT candidate misaligned AGN from the literature, finding four new radio galaxies with a double-lobed morphology. Additional four objects could be classified as such thanks to previous studies in the literature, for a total of nine new radio galaxies with GeV emission presented in this work. We foresee that further objects of this class might be found in the near future with the advent of the Square Kilometer Array, populating the GeV sky.

Bruni, G. (ORCID:0000000251826289)↗

Towards advanced polarized electron sources

Polarized electrons play an important role in high-energy and nuclear physics, and their properties have also been exploited in ultrafast electron microscopy. Currently, gallium arsenide crystals illuminated by circular polarized infrared laser light are commonly used for generating polarized electrons. However, the achievable accelerating voltage and the gradient of these electrostatic sources limit the beam quality and quantity. A solution could be to combine gallium arsenide photocathodes with radio-frequency electron guns, which are capable of accelerating beams with significantly higher gradients and voltage. Here we report the successful operation of a gallium arsenide photocathode in a superconducting radio-frequency gun. Our findings are relevant for future sources of polarized electrons.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗