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Radiative recombination coefficients for all Fe ions are calculated by use of the Milne relation of detailed balance. Analytic fits are made to the dielectronic recombination rates computed by Jacobs (1977) and the Burgess general formula (1965). Higher level rates are treated hydrogenically by a quantum defect method based on the energies of the levels. Recombination coefficients for Fe I to Fe 26 are listed.
The ion-electron recombination coefficients for the lithium-like ions C IV, O VI, Ne VIII, Si XII and Ar XVI are computed by the bottleneck method of Byron et al. (1962). In this method, the minimum rate of transitions down the ladder of energy level is taken as the limiting recombination rate, and the particular energy level corresponding to the minimum transition rate is found. The partial collisional radiative recombination coefficient is obtained in terms of the equilibrium population, the rate of collisional de-excitation, the mean radiative transition probability from the bottleneck level and the total transition probability from a level above the bottleneck level to all levels below it. The full collisional-radiative recombination is then obtained by the addition of the values of the radiative recombination coefficient and the three-body recombination coefficient to the ground level. Results of the calculation are shown to be in good agreement with those of Drawin and Emard (1975) for the case of hydrogen. It is also noted that the process of dielectronic recombination, which is not accounted for here, may be significant at lower densities.
Recombination coefficient of the nighttime f-layer
Effective recombination coefficient in lower ionosphere determined from charged particle spectra obtained by rocket sounding in Canada
The collisional-radiative ionization and recombination coefficients are shown to be expressible in terms of the 'total probability', from initial level i to final level j, which excludes intermediate returns to the initial level. Applications are made to three-level and four-level systems to illustrate the method of calculation and compare with an approximation currently used.
Low density limit to three body ionic recombination coefficients in various gases
Recombination coefficient of nighttime F-region from incoherent scatter measurements
Three-body collisional recombination coefficients calculated for cesium and argon atomic ions, assessing Gryzinski cross sections
Measurement of night-time oxygen recombination coefficients in the f layer
Meteoritic dust particle effect on steady state distribution of electrons and ions in lower ionosphere, deriving expression for recombination coefficient from auroral radio absorption data
Effect of meteoritic dust on steady-state distribution of electrons and ions in lower atmosphere - effective recombination coefficient in D layer
Differential carrier lifetime measurements were performed on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different QW indium compositions as well as with and without doped barriers. Mg-doped p-type and Si-doped n-type barriers close to the QW were used to reduce the net internal electric field in the QW, thereby improving the electron–hole wavefunction overlap on the LEDs. LEDs with doped barriers show short lifetimes and low carrier densities in the active region compared to the reference LEDs. The recombination coefficients in the ABC model were estimated based on the carrier lifetime and quantum efficiency measurements. The improvement in the radiative coefficients in the LEDs with doped barriers coupled with the blueshift of the emission wavelengths indeed indicates an enhancement in wavefunction overlap and a reduction of quantum confined Stark effect as a result of the reduced internal electric field. However, doped barriers also introduce non-radiative recombination centers and thereby increase the Shockley–Read–Hall (SRH) coefficient, although the increment is less for LEDs with high indium composition QWs. As a result, at high indium composition (22%), LEDs with doped barriers outperform the reference LEDs even though the trend is reversed for LEDs with lower indium composition (13.5%). In conclusion, despite the trade-off of higher SRH coefficients, doped barriers are shown to be effective in reducing the internal electric field and increasing the recombination coefficients.
Recombination coefficient of nighttime f-layer
Bound-bound and bound-free radiative transition probabilities, as well as radiative recombination coefficients of the ion C IV, are computed with a semi-empirical polarization potential method. The nonhydrogenic probabilities and coefficients are given for all bound states of the ion up to the principal quantum number n = 7.
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NO dissociative-recombination rate coefficient temperature dependence, assuming constant transition probability at potential crossing