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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

RF Properties of Epitaxial Lift-Off HEMT Devices

Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.

Young, Paul G.↗
NASA NTRS1982

Some properties of RF sputtered hafnium nitride coatings

Hafnium nitride coatings were deposited by reactive RF sputtering from a hafnium target in nitrogen and argon gas mixtures. The rate of deposition, composition, electrical resistivity and complex index of refraction were investigated as a function of target substrate distance and the fraction nitrogen, (fN2) in the sputtering atmosphere. The relative composition of the coatings is independent on fN2 for values above 0.1. The electric resistivity of the hafnium nitride films changes over 8 orders of magnitude when fN2 changes from 0.10 to 0.85. The index of refraction is almost constant at 2.8(1-0.3i) up to fN2 = 0.40 then decreases to 2.1(1 - 0.01i) for higher values of fN2.

Aron, P. R.↗
DOE OSTI2024

Microscopic examination of rf-cavity-quality niobium films through local nonlinear microwave response

The performance of superconducting radio-frequency (SRF) cavities is sometimes limited by local defects. To investigate the rf properties of these local defects, especially those that nucleate rf magnetic vortices, a near-field magnetic microwave microscope is employed. Local third-harmonic response ( P 3 f ) and its temperature dependence and rf power dependence are measured for one Nb / Cu film grown by direct current magnetron sputtering (DCMS) and six Nb / Cu films grown by high-power impulse magnetron sputtering (HiPIMS) with systematic variation of deposition conditions. Five out of the six HiPIMS Nb / Cu films show a strong third-harmonic response that is likely coming from rf vortex nucleation due to a low- T c surface defect with a transition temperature between 6.3 and 6.8 K, suggesting that this defect is a generic feature of air-exposed HiPIMS Nb / Cu films. A phenomenological model of surface-defect grain boundaries hosting a low- T c impurity phase is introduced and studied with time-dependent Ginzburg-Landau (TDGL) simulations of probe-sample interaction to better understand the measured third-harmonic response. The simulation results show that the third-harmonic response of rf vortex nucleation caused by surface defects exhibits the same general features as the data, including peaks in third-harmonic response with temperature, and their shift and broadening with higher microwave amplitude. We find that the parameters of the phenomenological model (the density of surface defects that nucleate rf vortices and the depth an rf vortex travels through these surface defects) vary systematically with film deposition conditions. From the point of view of these two properties, the Nb / Cu film that is most effective at reducing the nucleation of rf vortices associated with surface defects can be identified. Published by the American Physical Society 2024

Wang, Chung-Yang (ORCID:0000000184299633)↗
DOE OSTI2024

Radio Frequency Properties of a 3D Printed Klystron Circuit

The manufacturing of active RF devices like klystrons is dominated by expensive and time-consuming cycles of machining and brazing. In this article, we characterize the RF properties of X-band klystron cavities and an integrated circuit manufactured with a novel additive manufacturing process. Parts are 3D printed in 316 L stainless steel with direct metal laser sintering, electroplated in copper, and brazed in one simple braze cycle. Stand-alone test cavities and integrated circuit cavities were measured throughout the manufacturing process. The un-tuned cavity frequency varies by less than 5% of the intended frequency, and Q factors reach above 1200. A tuning study was performed, and unoptimized tuning pins achieved a tuning range of 138 MHz without compromising Q. Klystron system performance was simulated with as-built cavity parameters and realistic tuning. Together, these results show promise that this process can be used to cheaply and quickly manufacture a new generation of highly integrated high power vacuum devices.

3D printing↗
DOE OSTI2026

Detectors and beam monitors based on wide bandgap semiconductors at cryogenic temperatures

Wide-bandgap semiconductors, such as single-crystal diamond and sapphire, can be used to measure the flux of passing particles through a particle-induced conductivity effect. We recently demonstrated a diamond-based, electrodeless electron beam halo monitor. This monitor utilized a thin diamond blade placed within an open, high-quality microwave resonator. The blade partially intercepted the beam and changes in the RF properties of the resonator were used to infer beam parameters. To enhance the sensitivity of our semiconductor sensors, we propose two new techniques: (1) biasing the semiconductor sensor to support avalanche multiplication of free carriers, and (2) operating at cryogenic temperatures to reduce intrinsic semiconductor losses and increase the mobility of induced carriers. These techniques are applicable not only to particle beam diagnostics but also to the detection of various types of ionizing radiation.

Accelerator Physics↗
NASA NTRS1988

New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

Source record↗
DOE OSTI2024

Trapping and actively transporting single particles of arbitrary properties in low-pressure rf plasmas with and without a magnetic field

We report the experimental realization of optical trapping and controlled manipulations of single particles of arbitrary properties, e.g., nano- to micrometer in size, transparent spheres to strongly light absorbing nonspherical particles, in low-pressure rf plasmas. First, we show optical trapping and transport of single particles in an unmagnetized rf plasma. Then, we show similar observations in a weakly magnetized rf plasma. This is the first demonstration of actively transporting (pushing and pulling) light-absorbing, nonspherical single particles in plasmas. The result suggests that optically trapped, actively controlled, single plasma dust particles (not limited to those externally sampled spheres) could be an in situ micro-probe for dusty plasma and magnetized dusty plasma diagnostics.

Physics↗
NASA NTRS1983

Design of low loss helix circuits for interference fitted and brazed circuits

The RF loss properties and thermal capability of brazed helix circuits and interference fitted circuits were evaluated. The objective was to produce design circuits with minimum RF loss and maximum heat transfer. These circuits were to be designed to operate at 10 kV and at 20 GHz using a gamma a approximately equal to 1.0. This represents a circuit diameter of only 0.75 millimeters. The fabrication of this size circuit and the 0.48 millimeter high support rods required considerable refinements in the assembly techniques and fixtures used on lower frequency circuits. The transition from the helices to the waveguide was designed and the circuits were matched from 20 to 40 GHz since the helix design is a broad band circuit and at a gamma a of 1.0 will operate over this band. The loss measurement was a transmission measurement and therefore had two such transitions. This resulting double-ended match required tuning elements to achieve the broad band match and external E-H tuners at each end to optimize the match for each frequency where the loss measurement was made. The test method used was a substitution method where the test fixture was replaced by a calibrated attenuator.

Jacquez, A.↗
NASA NTRS1982

RF sputtered silicon and hafnium nitrides: Properties and adhesion to 440C stainless steel

Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or - 100 kg/sq mm was measured for hafnium nitride and 3900 + or - 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

Grill, A.↗
NASA NTRS1983

RF-sputtered silicon and hafnium nitrides - Properties and adhesion to 440C stainless steel

Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or 100 kg/sq mm was measured for hafnium nitride and 3900 + or 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

Grill, A.↗
DOE OSTI2023

Multi-Line Superconducting Waveguides Based on YBCO-on-Kapton Technology

Coplanar (with the ground) and stripline 25 cm long waveguides are manufactured from the YBCO-Kapton material. The waveguides are intended as the key components of a scalable signal delivery for large quantum computing systems and detectors. The waveguide is coupled with an integrated power divider that replaces the standard attenuator. The divider is designed to return most of the power to the previous thermalization stage. The method is projected to reduce the active dissipation by ≈10. We investigate the effect of internal strain in YBCO layer on the device's mechanical stability. Here, we show that adhesives with high stiffness are essential for the reliability of YBCO-Kapton devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Meter-scale High-temperature Superconducting RF Waveguides with Integrated Filters and Attenuators

Here, we report the performance of coplanar, multifilament waveguides manufactured from crystalline films of a well-known HTS compound, YBCO, transferred to a low-loss dielectric substrate, such as E-Kapton. The coplanar two-line waveguide delivers low cross-talk, below 20 dB level, and low attenuation, below 4 dB/m at 6 GHz, 77 K. Controlled-impedance 50 Ω waveguides would require a method for reliable patterning narrow, less than 100-micron wide, YBCO traces over a meter length. We report a lithography-etching approach that minimizes the difference in the etching rate of YBCO and the metallization layers of Ag and Cu. An array of metalized vias isolates the traces. We describe the via metallization process that is not damaging to YBCO and compatible with dense, 2 mm period, arrays of vias.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Optimization of Nb 3 Sn sputtering on SRF structures

Superconducting radiofrequency (SRF) cavities are the key technology to compact, high-efficiency, and cost-effective CW SRF accelerators. Further improvements in the efficiency can be realized by using novel materials such as Nb 3 Sn coated on the inner surface of SRF cavities. The Nb 3 Sn coatings enable cavity operation at 4 K, where the Nb 3 Sn coated cavities are already very efficient and have high intrinsic quality factors. Advances in Nb3Sn coatings on the inner surface of SRF cavities showed the potential for this material to significantly cut the capital and operating costs of SRF accelerators. Several approaches have been and are being investigated for coating SRF cavities with Nb 3 Sn. Magnetron sputtering is a versatile technique in that it has been shown to produce Nb 3 Sn films on flat Nb target in a single phase and a precisely controlled thickness, low defect levels, and a favorable morphology. Deposition of Nb 3 Sn films on SRF cavities have also shown promising RF superconducting properties. However, sputter coating of Nb 3 Sn on SRF cavities requires further development to be used in accelerators.

43 PARTICLE ACCELERATORS↗
NASA NTRS1973

Theoretical and experimental investigations of collective microwave phenomena in solids

Methods of generating microwave shear waves efficiently were studied. A new technique of mode conversion from a longitudinal wave to a shear wave was investigated and virtually 100% conversion efficiency could be obtained. Several aspects of Gunn oscillators were studied. One involved the detailed study of domains in Gunn oscillators using long samples of bulk gallium arsenide. Several new techniques were devised for measuring the properties of the domains. A fundamental theory of the efficiency of a Gunn oscillator was worked out. A computer program was devised to study the transient effect of domains passing through Gunn diodes. Some of the first planar epitaxial Gunn oscillators were made using liquid epitaxial material grown by liquid phase techniques on semi-insulating substrate. A new theory which predicted the properties of RF signals propagating in a thin film layer of GaAs was developed. The theory of the operation of a traveling wave amplifier is described.

Kino, G. S.↗
NASA NTRS1985

Dielectric properties of 'diamondlike' carbon prepared by RF plasma deposition

Metal-carbon-metal structures were fabricated using either gold or aluminum evaporated electrodes and RF plasma (methane) deposited 'diamondlike' carbon films. Alternating-current conductance and capacitance versus voltage and frequency (10 Hz to 13 MHz) data were taken to determine the dielectric properties of these films. Conductance versus frequency data fit a generalized power law, consistent with both dc and hopping conduction components. The capacitance versus frequency data are well matched to the conductance versus frequency data, as predicted by a Kramers-Kronig analysis. The dielectric loss tangent is nearly constant at 0.5 to 1.0 percent over the frequency range from 1 to 100 kHz. The dc resistivity is above 10 to the 13th ohm cm, and the dc breakdown strength is above 8 x 10 to the 6th V/cm is properly prepared samples.

Lamb, J. D.↗
NASA NTRS1982

Photovoltaic properties of ferroelectric BaTiO3 thin films RF sputter deposited on silicon

Ferroelectric thin films of BaTiO3 have been successfully deposited on n-type silicon substrates at temperatures above 500 C by RF sputtering in an O2/Ar atmosphere. Analysis by X-ray diffraction patterns show that films deposited at room temperature are amorphous. At temperatures above 500 C, crystalline BaTiO3 films with a tetragonal structure are obtained. The polarization-electric field (P-E) hysteresis loops and a broad peak in the dielectric constant versus temperature curve at Curie point indicate that the RF sputtered BaTiO3 films are ferroelectric. An anomalous photovoltaic effect is observed in these thin films which is related to the remanent polarization of the material. The results on open-circuit and short-circuit measurements provide an important basis for a better understanding of the role of photovoltaic field, photovoltaic current, and the pyroelectric properties in photoferroelectric domain switching.

Dharmadhikari, V. S.↗