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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

RF Properties of Epitaxial Lift-Off HEMT Devices

Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.

Young, Paul G.↗
NASA NTRS1982

Some properties of RF sputtered hafnium nitride coatings

Hafnium nitride coatings were deposited by reactive RF sputtering from a hafnium target in nitrogen and argon gas mixtures. The rate of deposition, composition, electrical resistivity and complex index of refraction were investigated as a function of target substrate distance and the fraction nitrogen, (fN2) in the sputtering atmosphere. The relative composition of the coatings is independent on fN2 for values above 0.1. The electric resistivity of the hafnium nitride films changes over 8 orders of magnitude when fN2 changes from 0.10 to 0.85. The index of refraction is almost constant at 2.8(1-0.3i) up to fN2 = 0.40 then decreases to 2.1(1 - 0.01i) for higher values of fN2.

Aron, P. R.↗
NASA NTRS1988

New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

Source record↗
NASA NTRS1983

Design of low loss helix circuits for interference fitted and brazed circuits

The RF loss properties and thermal capability of brazed helix circuits and interference fitted circuits were evaluated. The objective was to produce design circuits with minimum RF loss and maximum heat transfer. These circuits were to be designed to operate at 10 kV and at 20 GHz using a gamma a approximately equal to 1.0. This represents a circuit diameter of only 0.75 millimeters. The fabrication of this size circuit and the 0.48 millimeter high support rods required considerable refinements in the assembly techniques and fixtures used on lower frequency circuits. The transition from the helices to the waveguide was designed and the circuits were matched from 20 to 40 GHz since the helix design is a broad band circuit and at a gamma a of 1.0 will operate over this band. The loss measurement was a transmission measurement and therefore had two such transitions. This resulting double-ended match required tuning elements to achieve the broad band match and external E-H tuners at each end to optimize the match for each frequency where the loss measurement was made. The test method used was a substitution method where the test fixture was replaced by a calibrated attenuator.

Jacquez, A.↗
NASA NTRS1982

RF sputtered silicon and hafnium nitrides: Properties and adhesion to 440C stainless steel

Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or - 100 kg/sq mm was measured for hafnium nitride and 3900 + or - 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

Grill, A.↗
NASA NTRS1983

RF-sputtered silicon and hafnium nitrides - Properties and adhesion to 440C stainless steel

Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or 100 kg/sq mm was measured for hafnium nitride and 3900 + or 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

Grill, A.↗
NASA NTRS1973

Theoretical and experimental investigations of collective microwave phenomena in solids

Methods of generating microwave shear waves efficiently were studied. A new technique of mode conversion from a longitudinal wave to a shear wave was investigated and virtually 100% conversion efficiency could be obtained. Several aspects of Gunn oscillators were studied. One involved the detailed study of domains in Gunn oscillators using long samples of bulk gallium arsenide. Several new techniques were devised for measuring the properties of the domains. A fundamental theory of the efficiency of a Gunn oscillator was worked out. A computer program was devised to study the transient effect of domains passing through Gunn diodes. Some of the first planar epitaxial Gunn oscillators were made using liquid epitaxial material grown by liquid phase techniques on semi-insulating substrate. A new theory which predicted the properties of RF signals propagating in a thin film layer of GaAs was developed. The theory of the operation of a traveling wave amplifier is described.

Kino, G. S.↗
NASA NTRS1985

Dielectric properties of 'diamondlike' carbon prepared by RF plasma deposition

Metal-carbon-metal structures were fabricated using either gold or aluminum evaporated electrodes and RF plasma (methane) deposited 'diamondlike' carbon films. Alternating-current conductance and capacitance versus voltage and frequency (10 Hz to 13 MHz) data were taken to determine the dielectric properties of these films. Conductance versus frequency data fit a generalized power law, consistent with both dc and hopping conduction components. The capacitance versus frequency data are well matched to the conductance versus frequency data, as predicted by a Kramers-Kronig analysis. The dielectric loss tangent is nearly constant at 0.5 to 1.0 percent over the frequency range from 1 to 100 kHz. The dc resistivity is above 10 to the 13th ohm cm, and the dc breakdown strength is above 8 x 10 to the 6th V/cm is properly prepared samples.

Lamb, J. D.↗
NASA NTRS1982

Photovoltaic properties of ferroelectric BaTiO3 thin films RF sputter deposited on silicon

Ferroelectric thin films of BaTiO3 have been successfully deposited on n-type silicon substrates at temperatures above 500 C by RF sputtering in an O2/Ar atmosphere. Analysis by X-ray diffraction patterns show that films deposited at room temperature are amorphous. At temperatures above 500 C, crystalline BaTiO3 films with a tetragonal structure are obtained. The polarization-electric field (P-E) hysteresis loops and a broad peak in the dielectric constant versus temperature curve at Curie point indicate that the RF sputtered BaTiO3 films are ferroelectric. An anomalous photovoltaic effect is observed in these thin films which is related to the remanent polarization of the material. The results on open-circuit and short-circuit measurements provide an important basis for a better understanding of the role of photovoltaic field, photovoltaic current, and the pyroelectric properties in photoferroelectric domain switching.

Dharmadhikari, V. S.↗
NASA NTRS2012

Radar Scattering and Block Size Properties of Lunar Crater Ejecta From Mini-RF and LROC NAC Data

A major objective of the Mini-RF experiment is to distinguish lunar surfaces that may contain water/ice deposits [1,2]. Better understanding of the backscattering properties of craters of varying age and size is crucial for interpreting data received from the Mini-RF. The Mini-RF transmits a circularly polarized RF electromagnetic energy and coherently receives orthogonal linear polarization echoes [1]. The Mini- RF maps in two separate bands ( =12.6 and 4.5 cm) at a high resolution mode of 30 m/pixel [1]. Given the variables mentioned, the four stokes parameters are reconstructed. The Circular Polarization Ratio (CPR) is calculated for the purposes of understanding subsurface and surface roughness. The CPR is determined from reflections acquired from the ratio of power of the transmitted radio wave in same sense to the reflected radio wave in the opposite sense [1]. Ice in the permanently shadowed regions (PSRs) would be transparent to radar, but the inclusions of materials and imperfections would cause the radio wave to reflect multiple times [3], enhancing the number of same sense reflections and increasing the CPR. In addition, ice also displays the coherent backscatter opposition effect (CBOE), an interferrometric addition of same sense backscatter that further increases the CPR of ice targets [7]. High CPR values also correlate to multiple reflections and are typically associated with very rough surfaces [3]. The average dry lunar surface has a CPR in the range of 0.2-0.4 at 48deg incidence [3]. The purpose of this study is to begin to quantify degrees of surface wavelength-scale roughness with CPR and to understand how such surface roughness is created and gradually destroyed by erosion on the lunar surface. Another goal is to identify and isolate the possible causes of high CPR within the shadowed areas of anomalous polar craters [3]. All the studied craters are non-polar, so that we can see into their interiors in NAC images. The idea is to understand what controls blockiness in these craters so that we can rule out rocks (and rule in ice) for the anomalous polar dark ones [3].

Spudis, P. D.↗
NASA NTRS1969

Phase multiplying electronic scanning array

Scanning array was designed with properties of low RF loss and phase control. The array consists of a series of special waveguides, hybrids made up of two variable reactance branch arms for input signals, an edge slot for the difference port, and a sum arm for the unradiated signal.

Seaton, A. F.↗
NASA NTRS2002

Improved equivalent circuit for twin slot terahertz receivers

Series-fed coplanar waveguide embedding circuits are being developed for terahertz mixers using, in particular, submicron-sized superconducting devices, such as hot electron bolometers as the nonlinear element. Although these mixers show promising performance, they usually also show a considerable downward shift in the center frequency, when compared with simulations obtained by using simplified models. This makes it very difficult to design low-noise mixers for a given THz frequency. This shiftis principally caused by parasitics due to the extremely small details (in terms of wavelength) of the device, and by the electrical properties of the RF choke filter in the DC/IF line. In this paper, we present an improved equivalent network model of such mixer circuits which agrees with measured results at THz frequencies and we propose a new set of THz bolometric mixers that have been fabricated and are currently being tested.

HEB slot antennas CPW↗
NASA NTRS1983

Advanced earth observation spacecraft computer-aided design software: Technical, user and programmer guide

The IDEAS computer of NASA is a tool for interactive preliminary design and analysis of LSS (Large Space System). Nine analysis modules were either modified or created. These modules include the capabilities of automatic model generation, model mass properties calculation, model area calculation, nonkinematic deployment modeling, rigid-body controls analysis, RF performance prediction, subsystem properties definition, and EOS science sensor selection. For each module, a section is provided that contains technical information, user instructions, and programmer documentation.

Farrell, C. E.↗
NASA NTRS2024

Electrical Properties of Lunar Environment Used for Predicting Lunar RF Propagation Characteristics

This contribution treats the lunar propagation environment as a three region medium: lunar exosphere, lunar regolith, and lunar bedrocks. Then it provides models for predicting the electromagnetic characteristics of each region. The electromagnetic characteristics could be electric characteristics represented by the complex relative permittivity, or magnetic characteristics represented by the complex relative permeability or both electric and magnetic characteristics. The lunar exosphere and the lunar bedrocks have only electric characteristics. The lunar regolith has both electric and magnetic characteristics. The complex relative permittivity models for lunar regolith are mapping of the corresponding models for Earth surface components reported in ITU-R P. 527-6. The complex relative permittivity prediction model of lunar exosphere is expressed in terms of a plasma frequency similar to the ordinary wave critical frequency in the corresponding model for the ionosphere. Based on this fascicle the following can be concluded for the frequency bands of 390 MHz and above: • The lunar exosphere can be treated as a free space, • The lunar regolith can be considered as non-magnetic, • The regolith complex relative permittivity has no temperature dependence, • The real part of the regolith complex relative permittivity depends only on regolith bulk density and it has no frequency dependence, and • The variation of regolith complex relative permittivity with regolith depth should be taken into consideration. Moreover, at frequencies of 2400 MHz and above, the lunar regolith can be treated as a uniform medium with complex relative permittivity equal to the corresponding complex relative permittivity at the regolith surface.

Electrical Permittivity↗