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The Radiation Tolerant Displays project aims to develop a reference design for a display system that can withstand and mitigate the effects of radiation in deep space. Radiation Tolerant Displays seeks to deliver on this goal through a collaboration across industry and agency and by building upon the Mars Campaign Office’s (MCO) Project Polaris Radiation Tolerant Displays effort.
Space is the operating environment of a multitude of systems that our society is heavily reliant on today, however, maintaining operability there necessitates special consideration of the electronic systems' tolerance of space radiation. Electronic systems are critically dependent on the electronic properties of their semiconductor components, which are modified by space radiation with an adverse impact on the space system performance. What innate property allows some semiconductors to sustain little damage while others accumulate defects rapidly with dose is poorly understood, which limits the extent to which radiation tolerance can be implemented as a design criterion. Here, to gain insight into what properties are drivers of semiconductor radiation tolerance, the first step is to generate a dataset of the relative radiation tolerance of a broad sampling of semiconductors. To accomplish this, Rutherford backscatter channeling experiments are used to compare the displaced lattice atom buildup in InAs, InP, GaP, GaN, ZnO, MgO, and Si as a function of stepwise alpha particle dose. With this experimental information on radiation-induced incorporation of interstitial defects in hand, hybrid density functional theory electron densities (and their derived quantities) are calculated and their gradient and Laplacian are evaluated to obtain key fundamental information about the interactions in each material. It is shown that simple, undifferentiated values (which are typically used to describe bond strength) are insufficient to predict radiation tolerance. Instead, the curvature of the electron density at bond critical points provides a measure of radiation tolerance consistent with the experimental results obtained. This curvature and associated forces surrounding bond critical points have the potential to disfavor the localization of displaced lattice atoms at these points, favoring their diffusion toward perfect lattice positions. With this criterion to predict radiation tolerance, simple density functional theory simulations can be conducted on potential new materials to gain insight into how they may operate in demanding high radiation environments.
This test report provides the results of radiation tolerance robustness testing that was performed on samples of robotic components and an ultrasonic guided wave air-slot sensor that represent components/sub-systems of the Robotic Air-slot Volumetric Inspection System (RAVIS) that has been engineered for volumetric inspection of Hanford tank bottom plates via under-tank refractory pad air-slots. The specific components tested for 1) functionality during active irradiation and 2) tolerance to cumulative radiation dose (until failure or upon reaching a cumulative dose test limit) were: • four samples each of a printed circuit board (PCB) and direct current (DC) motor, which are robotic components, and • 26 ultrasonic piezoelectric elements (samples) inside an air-slot sensor. The robotic components are part of the RAVIS air-slot inspection crawler drive control system that is responsible for remote communication with and actuation of the air-slot inspection crawler. The failure of either of these components during under-tank deployment would require manual retrieval via the crawler’s tether, which risks damage to the robot/refractory/tank. Preemptive replacement of the components at appropriately conservative dose/time intervals informed by failure dose would reduce the likelihood of under-tank failure. The components were included in radiation tolerance testing to quantify their failure doses to inform replacement intervals. The air-slot sensor is responsible for collecting ultrasonic inspection data (scan images) for the tank bottom plates during under-tank deployment. Compromised signal quality due to elevated noise levels caused by gamma radiation would compromise inspection performance. The air-slot sensor was included in radiation tolerance testing to quantify the impact of active irradiation on sensor signal quality. The irradiation and in-situ functional tests of the PCBs, DC motors and air-slot sensor took place in June and July 2020 at the Pacific Northwest National Laboratory. Testing was performed at a gamma dose rate near 300 rad/hr., which, in the absence of under-tank dose rate data, has been conservatively estimated to be the upper-bound dose rate beneath the primary tanks at Hanford. Irradiation took place at elevated temperatures of 150-200°F to determine failure doses that reflect the compounding effects of gamma radiation and heat. The test results revealed: • The DC motors can tolerate being actively irradiated at the high dose rate at 200°F and can tolerate a cumulative dose of 300,000 rad, that which would be incurred after 5 years of service at the 300 rad/hr dose rate. The component therefore meets minimum and preferred radiation tolerance and lifecycle requirements for robotic components. • The air-slot sensor can tolerate being actively irradiated at the high dose rate at 150°F and can tolerate a cumulative dose of 60,000 rad, that which would be incurred after 1 year of service at the 300 rad/hr dose rate. The sensor therefore meets minimum radiation tolerance and lifecycle requirements. • The PCB can tolerate being actively irradiated at the high dose rate, but can only tolerate a cumulative dose of 19,000 rad at 150-200°F. The PCB does not meet minimum radiation tolerance and lifecycle requirements; however, because the component is considered replaceable, it can be replaced before a cumulative dose of 19,000 rad is reached, determined through either monitoring with a dosimeter or scheduled time intervals that are calculated based on conservative estimates of under-tank dose rates.
Space Electronics needs Radiation Tolerance or hardness to withstand the harsh space environment: high-energy particles can change the state of the electronics or puncture transistors making them disfunctional. This viewgraph document reviews the use of CMOS Ultra Low Power Radiation Tolerant circuits for NASA's electronic requirements.
The Radiation Tolerant, FPGA-based SmallSat Computer System (RadSat) computing platform exploits a commercial off-the-shelf (COTS) Field Programmable Gate Array (FPGA) with real-time partial reconfiguration to provide increased performance, power efficiency and radiation tolerance at a fraction of the cost of existing radiation hardened computing solutions. This technology is ideal for small spacecraft that require state-of-the-art on-board processing in harsh radiation environments but where using radiation hardened processors is cost prohibitive.
Current and future near-Earth and deep space exploration programs and space defense programs require the development of robust intra-spacecraft serial data transfer electronics that must be reconfigurable, fault-tolerant, and have the ability to operate effectively for long periods of time in harsh environmental conditions. Existing data transfer systems based on state-of-the-art serial data transfer protocols or passive backplanes are slow, power-hungry, and poorly reconfigurable. They provide limited expandability and poor tolerance to radiation effects and total ionizing dose (TID) in particular, which presents harmful threats to modern submicron electronics. This novel approach is based on a standard library of differential cells tolerant to TID, and patented, multi-level serial interface architecture that ensures the reliable operation of serial interconnects without application of a data-strobe or other encoding techniques. This proprietary, high-speed differential interface presents a lowpower solution fully compatible with the SpaceWire (SW) protocol. It replaces a dual data-strobe link with two identical independent data channels, thus improving the system s tolerance to harsh environments through additional double redundancy. Each channel incorporates an automatic line integrity control circuitry that delivers error signals in case of broken or shorted lines.
The Radiation Tolerant Intelligent Memory Stack (RTIMS), suitable for both geostationary and low earth orbit missions, has been developed. The memory module is fully functional and undergoing environmental and radiation characterization. A self-contained flight-like module is expected to be completed in 2006. RTIMS provides reconfigurable circuitry and 2 gigabits of error corrected or 1 gigabit of triple redundant digital memory in a small package. RTIMS utilizes circuit stacking of heterogeneous components and radiation shielding technologies. A reprogrammable field programmable gate array (FPGA), six synchronous dynamic random access memories, linear regulator, and the radiation mitigation circuitries are stacked into a module of 42.7mm x 42.7mm x 13.00mm. Triple module redundancy, current limiting, configuration scrubbing, and single event function interrupt detection are employed to mitigate radiation effects. The mitigation techniques significantly simplify system design. RTIMS is well suited for deployment in real-time data processing, reconfigurable computing, and memory intensive applications.
The growth of advanced energy technologies for power generation is enabled by the design, development, and integration of structural materials that can withstand extreme environments, such as high temperatures, radiation damage, and corrosion. High-entropy alloys (HEAs) are a class of structural materials in which suitable chemical elements in four or more numbers are mixed to typically produce single-phase concentrated solid solution alloys (CSAs). Many of these alloys exhibit good radiation tolerance like limited void swelling and hardening up to relatively medium radiation doses (tens of displacements per atom (dpa)); however, at higher radiation damage levels (>50 dpa), some HEAs suffer from considerable void swelling limiting their near-term acceptance for advanced nuclear reactor concepts. In this study, we developed a HEA containing a high density of Cu-rich nanoprecipitates distributed in the HEA matrix. The Cu-added HEA, NiCoFeCrCu 0.12 , shows excellent void swelling resistance and negligible radiation-induced hardening upon irradiation up to high radiation doses (i.e., higher than 100 dpa). The void swelling resistance of the alloy is measured to be significantly better than NiCoFeCr CSA and austenitic stainless steels. Density functional theory simulations predict lower vacancy and interstitial formation energies at the coherent interfaces between Cu-rich nanoprecipitates and the HEA matrix. The alloy maintained a high sink strength achieved via nanoprecipitates and the coherent interface with the matrix at a high radiation dose (~50 dpa). From our experiments and simulations, the effective recombination of radiation-produced vacancies and interstitials at the coherent interfaces of the nanoprecipitates is suggested to be the critical mechanism responsible for the radiation tolerance of the alloy. Furthermore, the materials design strategy based on incorporating a high density of interfaces can be applied to high-entropy alloy systems to improve their radiation tolerance.
With the great demand for high radiation tolerant materials for advanced nuclear energy technologies, Fe-Cr alloys are at the forefront with long standing validated performance. Yet, the real mechanism behind their high radiation resistance is in question and understanding the effect of varying Cr percentage is a grand challenge limiting further improvements. Here we applied depth resolved atomic scale probe of defects to uncover the real mechanism on how Cr improves radiation resistance and explain the controversial impact of increasing Cr percentage. By combining depth-resolved positron annihilation lifetime spectroscopy and Doppler broadening spectroscopy we investigated the effect of Cr alloying on the formation and evolution of atomic size clusters induced by ion irradiation in Fe. We also used atom probe tomography to investigate the possible presence of Cr clusters or a’ phase with high Cr composition. The study reveals that the well-known resistance to radiation in Fe-Cr alloys arises from the stabilization of vacancy clusters around Cr atoms which act as sinks for radiation-induced defects. Thus, Cr atoms do not provide a direct sink for interstitials; rather defect complexes for that consist of Cr atoms and vacancies in turn act as sinks for irradiation-induced vacancies and interstitials. Most importantly, we find that lower amounts of Cr create smaller, uniformly distributed defect clusters that act as efficient sinks for radiation damage, but larger quantities of Cr form a defect structure that is less homogenous in size and spatial distribution, resulting in less efficient damage recombination. No evidence of phase a’ was found before or after irradiation, which indicates that it does not contribute to the observed radiation tolerance.
The acute radiation syndrome in man is clinically bounded by death at high dose levels and by the prodromal syndrome of untoward physiological effects at minimal levels of clinically effective exposure. As in lower animals, man experiences principally three acute modes of death from radiation exposure (Bond et al., 1965). These are known collectively as the lethal radiation syndromes: central nervous system death, gastrointestinal death, and hematopoietic death. The effect of multiple exposure on lethality, the effect of multiple exposure on hematopoietic recovery, and quantitative aspects of cell and tissue repair are discussed.
This paper discusses the in-situ characterization tools designed to assess radiation tolerance and elemental migration in perovskite materials. With the increasing use of perovskites in various technological applications, understanding their response to radiation exposure is paramount. Ion Beam Induced Charge (IBIC) emerges as a powerful tool for investigating the radiation tolerance of perovskites at the microscale. By employing focused ion beams, IBIC allows for the spatial mapping of charge carriers, offering insights into the material's electronic response to radiation-induced defects. This technique enables researchers to pinpoint areas of enhanced or suppressed charge collection, providing valuable information on the perovskite's intrinsic properties under irradiation. Rutherford Backscattering Spectrometry (RBS) complements the study by offering a quantitative analysis of elemental migration in perovskite materials. Through the precise measurement of backscattered ions, RBS provides a detailed understanding of the elemental composition and distribution within the perovskite lattice after radiation exposure. The integration of IBIC and RBS techniques in in-situ experiments enhances the comprehensive characterization of radiation effects on perovskites.
Extensive radiation testing of vertical junction (VJ) solar cells demonstrated a radiation tolerance better than both planar silicon cells and at least one type of (AlGa)As-GaAs cell. Due to tradeoffs between short circuit current and open circuit voltage, the end of life (10 to the 16th power 1 MeV electrons/sq cm) maximum power point is nearly independent of bulk resistivity between 2 and 10 ohm cm, increases slightly with increasing wafer thickness between 3 and 11 mils, and increases slightly with increasing groove depth between 1 and 3 mils.
Research work in the providing radiation tolerant electronics to NASA and the commercial sector is reported herein. There are four major sections to this report: (1) Special purpose VLSI technology section discusses the status of the VLSI projects as well as the new background technologies that have been developed; (2) Lossless data compression results provide the background and direction of new data compression pursued under this grant; (3) Commercial technology transfer presents an itemization of the commercial technology transfer; and (4) Delivery of VLSI to the Government is a solution and progress report that shows how the Government and Government contractors are gaining access to the technology that has been developed by the MRC.
Results of clinical studies of radiation effects on man are used to evaluate space radiation hazards encountered during manned space travel. Considered are effects of photons as well as of mixed fission neutrons and gamma irradiations in establishing body radiosensitivity and tolerance levels. Upper and lower dose-response-time relations for acute radiation syndromes in patients indicate that man is more than sufficiently radioresistant to make the risks of an early radiation effect during one short space mission intangibly small in relation to the other nonradiation risks involved.
A document discusses power converters suitable for space use that meet the DSCC MIL-PRF-38534 Appendix G radiation hardness level P classification. A method for qualifying commercially produced electronic parts for DC-DC converters per the Defense Supply Center Columbus (DSCC) radiation hardened assurance requirements was developed. Development and compliance testing of standard hybrid converters suitable for space use were completed for missions with total dose radiation requirements of up to 30 kRad. This innovation provides the same overall performance as standard hybrid converters, but includes assurance of radiation- tolerant design through components and design compliance testing. This availability of design-certified radiation-tolerant converters can significantly reduce total cost and delivery time for power converters for space applications that fit the appropriate DSCC classification (30 kRad).
MAB phases are a new class of layered ternary materials that have already shown a number of outstanding properties. Here, we investigate defect evolution and radiation tolerance of two MAB phases, MoAlB and Fe 2 AlB 2 , using a combination of experimental characterization and first-principles calculations. We find that Fe 2 AlB 2 is more tolerant to radiation-induced amorphization than MoAlB, both at 150 °C and at 300 °C. The results can be explained by the fact that the Mo Frenkel pair is unstable in MoAlB and as a result, irradiated MoAlB is expected to have a significant concentration of Mo Al antisites, which are difficult to anneal even at 300 °C. We find that the tolerance to radiation-induced amorphization of MAB phases is lower than in MAX phases, but it is comparable to that of SiC. However, MAB phases do not show radiation-induced cracking which is observed in MAX phases under the same irradiation conditions. This research suggests that MAB phases might be a promising class of materials for applications that involve radiation.
The radiation tolerance of the following three low resistivity, high voltage silicon solar cells was investigated: (1) the COMSAT MSD (multi-step diffused) cell, (2) the MinMIS cell, and (3) the MIND cell. A description of these solar cells is given along with drawings of their configurations. The diffusion length damage coefficients for the cells were calculated and presented. Solar cell spectral response was also discussed. Cells of the MinMIS type were judged to be unsuitable for use in the space radiation environment.
We measured the radiation tolerance of commercially available diamonds grown by the Chemical Vapor Deposition process by measuring the charge created by a 120 GeV hadron beam in a 50 μm pitch strip detector fabricated on each diamond sample before and after irradiation. We irradiated one group of samples with 70 MeV protons, a second group of samples with fast reactor neutrons (defined as energy greater than 0.1 MeV), and a third group of samples with 200 MeV pions, in steps, to (8.8±0.9) × 1015 protons/cm2, (1.43±0.14) × 1016 neutrons/cm2, and (6.5±1.4) × 1014 pions/cm2, respectively. By observing the charge induced due to the separation of electron–hole pairs created by the passage of the hadron beam through each sample, on an event-by-event basis, as a function of irradiation fluence, we conclude all datasets can be described by a first-order damage equation and independently calculate the damage constant for 70 MeV protons, fast reactor neutrons, and 200 MeV pions. We find the damage constant for diamond irradiated with 70 MeV protons to be 1.62±0.07(stat)±0.16(syst)× 10−18 cm2/(p μm), the damage constant for diamond irradiated with fast reactor neutrons to be 2.65±0.13(stat)±0.18(syst)× 10−18 cm2/(n μm), and the damage constant for diamond irradiated with 200 MeV pions to be 2.0±0.2(stat)±0.5(syst)× 10−18 cm2/(π μm). The damage constants from this measurement were analyzed together with our previously published 24 GeV proton irradiation and 800 MeV proton irradiation damage constant data to derive the first comprehensive set of relative damage constants for Chemical Vapor Deposition diamond. We find 70 MeV protons are 2.60 ± 0.29 times more damaging than 24 GeV protons, fast reactor neutrons are 4.3 ± 0.4 times more damaging than 24 GeV protons, and 200 MeV pions are 3.2 ± 0.8 more damaging than 24 GeV protons. We also observe the measured data can be described by a universal damage curve for all proton, neutron, and pion irradiations we performed of Chemical Vapor Deposition diamond. Finally, we confirm the spatial uniformity of the collected charge increases with fluence for polycrystalline Chemical Vapor Deposition diamond, and this effect can also be described by a universal curve.