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Results for “Radiation-hard electronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis.

Buehler, M. G.↗

Uranium Doped Gallium Nitride Epitaxial Thin Films

Gallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid-state lighting and high-power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping of most of the elements of the periodic table, but the actinides remain unexplored. Molecular beam epitaxy is used to demonstrate uranium doping of GaN single crystals. High structural quality of the host matrix is maintained despite partial elemental segregation of the uranium dopant into 1D structures at the levels presented here. Electronic transport measurements reveal relatively high conductivity, which persists down to cryogenic temperature and is characterized by the formation of narrow gaps in the electronic band structures very close to the Fermi level. Photoluminescence measurements reveal that the U-doped GaN exhibits optical behavior similar to that of the GaN substrate. The addition of actinide materials to a non-centrosymmetric, optically active, radiation-hard, and electronically tunable host matrix opens a world of possibilities for investigating and leveraging elements with high electron correlations in the pursuit of novel devices.

36 - MATERIALS SCIENCE↗

The AMACStar ASIC for the HL-LHC ATLAS ITk Strip detector: design, verification, testing, and quality assurance

For the high-luminosity upgrade to the LHC (HL-LHC), the ATLAS detector at CERN requires an all-new inner detector, the Inner Tracker (ITk). The ITk Strip subdetector is made up of silicon modules, which include three types of radiation-hard ASICs. One of these is the Autonomous Monitor and Control (AMAC). The AMAC is manufactured by Global Foundries using 130 nm CMOS8RF DM technology and is approximately 3 by 5 mm in size. This ASIC autonomously monitors the temperatures, voltages, and currents in the module components while controlling critical values in order to prevent these quantities from reaching dangerous levels. The final design, AMACStar, was verified, tested, and ensured to perform all necessary functions. A quality control procedure using an in-house probe station set-up was developed in order to ensure that every individual chip on each wafer of AMACStars required by the ITk Strip project met performance requirements. The average per wafer yield of usable AMACStars is 92.33%, exceeding the design-specific 90% yield estimated for project costing. This estimate was based on actual yields for similar designs in this process.

Analogue electronic circuits↗

A radiation-hardened star scanner for spacecraft guidance and control

A star scanner for the Galileo Project is described. Because it must function in the intense Jupiter radiation field, which consists primarily of high-energy electrons and protons, this star scanner is designed with radiation-hardness as a prime objective. The optics and the multiplier phototube are specially designed to minimize fluorescence and Cerenkov effects, and the electronic components to minimize ionization and displacement damage. The star-scanner layout provides maximum shielding for the optics and phototube. Test results predict successful operation in the expected Jovian radiation environment.

Birnbaum, M. M.↗

GaAs VLSI for aerospace electronics

Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

Larue, G.↗

Light-powered end-to-end neutron detection and imaging with an edge-deployed optical AI chip

Neutron detection is widely used in many applications including nuclear physics, nuclear energy, nuclear technologies and nuclear safeguards. Developing an end-to-end neutron detection and imaging workflow paves way towards fully automated processes for many applications. We implemented an automated workflow for neutron detection experiments which use a solid state image sensor to capture neutron hits as a digital image. We deploy the workflow to an edge-based optical neural network (ONN) to increase the radiation-hardness and lifetime of neutron detection instruments. We present a two-stage neural network framework for detection of neutrons at sub-pixel resolution. The first stage uses a region proposal network to efficiently detect and extract neutron hits from the input camera image. The second stage feeds the extracted hits into a fully connected neural network to predict the sub-pixel hit position. The performance of the two-stage framework is evaluated using the edge-based ONN. The results show that we can achieve above 96% neutron detection accuracy as well as sub-pixel and sub-micron position resolution, while enjoying the advantages of the ONN hardware including radiation-hardness, low energy consumption and high computing speed for integrated edge camera and hardware deployment, when compared with electronic counterparts.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

The Galileo attitude and articulation control system - A radiation-hard, high precision, state-of-the-art control system

The Galileo mission and spacecraft, consisting of a Jupiter-orbiter and an atmospheric entry probe, are discussed. Components will include: magnetometers and plasma-wave antennas on a boom, high-gain antenna, probe vehicle, two different bus electronics packages, and a radioisotope thermoelectric generator. Instruments, investigators and objectives are tabulated for both probe science and orbiter science investigations. Requirements in the design of the attitude and articulation control system are very stringent because of the complex dynamics, flexible body effects, the need for autonomy, and the severe radiation environment in the Jupiter nighborhood. Galileo was intended to be ready for launch via Space Shuttle in May of 1986.

Stephenson, R. Rhoads↗

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Li, S. B.↗

A radiation-hard, low-background multiplexer design for spacecraft imager applications

A possible multiplexer design for the focal plane for the Cassini Visible and Infrared Mapping Spectrometer (VIMS) is reviewed. The instrument's requirements for the multiplexed array are summarized. The VIMS instrument has a modest radiation-hardness requirement due to the trajectory and planetary environments in which the instrument will be required to operate. The total ionizing dose hardness requirement is a few tens of kilorads. A thin-gate oxide of a few hundred angstroms thickness is to be used. Field hardness is to be achieved by guard bands or hardened dielectric isolation. The design is argued to meet the low-noise and radiation-hardness required for imaging at Saturn. The design is versatile enough to provide double-correlated and double-uncorrelated sampling, which is accomplished in the signal processing electronics outside the focal plane.

Staller, Craig↗

Electron lithography STAR design guidelines. Part 2: The design of a STAR for space applications

The STAR design system developed by NASA enables any user with a logic diagram to design a semicustom digital MOS integrated circuit. The system is comprised of a library of standard logic cells and computr programs to place, route, and display designs implemented with cells from the library. Also described is the development of a radiation-hard array designed for the STAR system. The design is based on the CMOS silicon gate technology developed by SANDIA National Laboratories. The design rules used are given as well as the model parameters developed for the basic array element. Library cells of the CMOS metal gate and CMOS silicon gate technologies were simulated using SPICE, and the results are shown and compared.

Trotter, J. D.↗

Crystal Calorimetry for Charged Lepton Flavor Violation Searches

The Mu2e experiment at Fermilab aims to search for Charged Lepton Flavor Violation (CLFV) through the coherent conversion of a muon into an electron in the field of an aluminum nucleus. This process, highly suppressed in the Standard Model, would clearly indicate new physics if observed. A crucial component of Mu2e is its electromagnetic calorimeter, which enhances the identification and measurement of conversion electrons. The calorimeter consists of two disks of undoped CsI crystals read out by custom-designed SiPMs and fast front-end electronics. This paper presents an overview of the calorimeter’s design, its custom SiPM technology, the readout and data acquisition system, and the results from commissioning tests.Building on the experience from Mu2e, the proposed Mu2e-II upgrade aims to enhance further the experiment’s sensitivity by an order of magnitude. This requires significant advancements in calorimeter technology, particularly in crystal materials and photodetector performance. Studies on BaF$_2$ and LYSO crystals, as well as the development of radiation-hard Silicon Photomultipliers (SiPMs), are currently underway. Test beam results demonstrate promising improvements in energy resolution and timing capabilities, ensuring the feasibility of next-generation calorimetry solutions for Mu2e-II.

Atanov, N. [Dubna, JINR]↗

Development of a radiation-hard photomultiplier tube

In a radiation-hard photomultiplier tube (PMT) such as has been developed for stabilization of the Galileo spacecraft as it goes through the Jovian high energy radiation belts, the primary effects of high energy electron and proton radiation that must be resisted are the production of fluorescence and Cerenkov emission. The present PMT envelope is ceramic rather than glass, and employs a special, electron-focusing design which will collect, accelerate and amplify electrons only from desired photocathode areas. Tests in a Co-60 radiation facility have shown that the radiation-hard PMT produces less than 2.5 percent of the radiation noise of a standard PMT.

Birnbaum, M. M.↗

The CMS Phase-2 Fast Beam Condition Monitor prototype test with beam

The Fast Beam Condition Monitor (FBCM) is a standalone luminometer for the High Luminosity LHC (HL-LHC) program of the CMS Experiment at CERN. The detector is under development and features a new, radiation-hard, front-end application-specific integrated circuit (ASIC) designed for beam monitoring applications. The achieved timing resolution of a few nanoseconds enables the measurement of both the luminosity and the beam-induced background. The ASIC, called FBCM23, features six channels with adjustable shaping times, enabling in-field fine-tuning. Each ASIC channel outputs a single binary asynchronous signal encoding time-of-arrival and time-over-threshold information. The FBCM is based on silicon-pad sensors, with two sensor designs presently being considered. This paper presents the results of tests of the FBCM detector prototype using both types of silicon sensors with hadron, muon, and electron beams. Irradiated FBCM23 ASICs and silicon-pad sensors were also tested to simulate the expected conditions near the end of the detector's lifetime in the HL-LHC radiation environment. Based on test results, direct bonding between the sensor and ASIC was chosen, and an optimal bias voltage and ASIC threshold for FBCM operation were proposed. The current design of the front-end test board was validated following the beam test and is now being used for the first front-end module, which is expected to be produced in summer 2025. These results represent a major step forward in validating the FBCM concept, first version of the firmware and establishing a reliable design path for the final detector.

Beam-line instrumentation (beam position and profi↗

Development of Advanced, Radiation Resistant, Optical-based Detector Technology for Future Experiments.

The primary objective of this project has been to advance the design of high-performance electromagnetic (EM) calorimeters for future particle physics experiments, to identify and measure the timing, position and energy of electrons, positrons and gamma rays, particularly in high-luminosity environments with intense radiation and pileup conditions. To meet such challenges, the proposed research has focused on the development of ultra-compact, radiation-hard calorimeter modules, to provide excellent timing, spatial, and energy resolution. The work aligns with the DOE’s Basic Research Needs (BRN) for High Energy Physics (HEP) Instrumentation and the research team contributes actively to the Coordinating Panel on Advanced Detectors (CPAD) RDC9 calorimetry collaboration in the USA and the European Committee on Future Accelerators (ECFA) DRD-CALO calorimetry collaboration at CERN, the European Laboratory for Particle Physics located in Geneva, Switzerland. The research builds on the RADiCAL (radiation-hard, ultra-compact) modular sampling calorimeter approach, developed by the research team, which employs dense and very bright optical materials such as LYSO:Ce scintillator plates that are interleaved with very dense tungsten plates to minimize detector size while optimizing performance. The modules are comparable in size to a human index finger, dimensionally 14 mm x 14 mm in cross section and 135 mm in length. And despite the small size, the structure is capable of providing excellent timing and energy resolution. This is facilitated through the use of specialized quartz capillaries filled with wavelength-shifting filaments, positioned at various depths along the length of a module, to collect and guide light signals to silicon photomultipliers (SiPMs) which detect and convert the optical signals to electronic signals for analysis. The primary goals of this project have been: (1) Achieve a timing resolution to σ t ≤ 30 ps for high-energy electrons and photons, important for their association with specific events produced in colliding-beam experiments and for the detection of decays-in-flight of long-lived particles. The project has achieved this goal in beam tests of a single RADiCAL module at CERN, during which a timing resolution of σ t = 27 ps was measured for electrons of energy E = 150 GeV. Based upon a mathematical fit to the data measured over a broad energy range from low energy to high energy, a resolution of σ t ≤ 18 ps has been estimated for electrons of very high (TeV) energy. From these measurements and with further expected technical improvements, the timing resolution should reach σ t ≤ 10 ps, important for searches for discovery physics in upcoming and future experiments. (2) Achieve an energy resolution of σ E / E ≤ 10% / $\sqrt{E}$. The project has yet to achieve this goal, but is close to it, having measured a value of σ E / E ≤ 15.9% / $\sqrt{E}$ using a modular array. Ultimately, the resolution goal is expected to be reached by adjustments to material thicknesses within the modules, which will improve the sampling fraction to measure more precisely the shower energy for lower energy particles. The versatility of the modular RADiCAL approach enables the testing of advanced materials, photosensors and electronics, developed in collaboration with CPAD RDC and ECFA DRD-CALO groups. The structure can distinguish electrons, positrons and gamma rays from hadrons and muons and beam-induced backgrounds, making it a valuable tool in a variety of detector environments, including future circular colliders (FCC-ee, FCC-hh) proposed for the European Laboratory for Particle Physics (CERN), the muon-collider proposed for Fermi National Accelerator Laboratory (Fermilab), and searches for new physics in beam-dump, fixed target and forward-physics experiments. And, while designed with particle physics applications in mind, the technologies developed in this project have the potential for application more broadly in particle and nuclear physics, materials science, and medical physics, underscoring the far-reaching potential of this line of instrumentation research and development.

47 OTHER INSTRUMENTATION↗

Upgrades of the ATLAS zero degree calorimeter system for Run 3 at the Large Hadron Collider

Experimental studies of ultra-relativistic heavy ion collisions at the Large Hadron Collider (LHC) depend crucially on Zero Degree Calorimeters (ZDCs) that measure neutrons produced at near-beam rapidity in nucleus-nucleus collisions. In hadronic nuclear collisions these neutrons are mainly spectator neutrons, those that do not scatter from opposing nucleons during the collision. As a result, the ZDCs provide a vital probe of heavy ion collision geometry. The ZDCs are also essential in the study of ultra-peripheral collisions that are initiated by photons associated with the electric fields of one or both nuclei. Coherent photon emission typically leaves the photon emitter intact, making the observation of no ZDC signal, on one or both sides, a tag of such processes. The ATLAS ZDCs, built prior to Run 1, were substantially upgraded for LHC Run 3. The primary upgrades included replacement of the quartz Cherenkov radiator with H_2-doped fused silica rods; installation of fast air-core signal cables between the ZDC and the ATLAS USA15 cavern; a new LED-based calibration system; and new electronics implemented for readout and fully-digital triggering. The ZDCs were also augmented with new “Reaction Plane Detectors” (RPDs) designed to measure the transverse centroid of multi-neutron showers to allow event-by-event reconstruction of the directed-flow plane in nuclear collisions. The Run 3 ZDC detectors, including the RPDs, are described in detail with emphasis on aspects that are new for Run 3.

43 PARTICLE ACCELERATORS↗

Study of factors determining the radiation sensitivity of quartz crystal oscillators (A0189)

The correlation between defect cluster concentrations observed for different grades of quartz examined by transmission electron microscopy (TEM) and the electrical stability of quartz resonators exposed to complex radiation in an orbital LDEF was determined. It is demonstrated that the technique TEM provides a powerful method for studying the effect of radiation on crystalline quartz. Two factors suggest that the observed clusters may be responsible for the radiation-induced frequency drift and acoustic absorption effects associated with irradiated quartz resonators: (1) the clusters are expected to be very effective in modifying the piezoelectric properties of quartz because of the large strain fields associated with them; (2) both phenomena appear to be sensitive to the impurity concentration. It is suggested that TEM can be used to classify grades of quartz according to their suitability for use in radiation-hard resonators. This technique may identify the impurities that are responsible and thereby effect an improvement in the stability of quartz oscillators.

Venables, J. D.↗

Design of high-efficiency, radiation-hard, GaInP/GaAs solar cells

In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.

Kurtz, Sarah R.↗

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells are being made on silicon (Si) wafers (InP/Si) to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers compared to InP or germanium (Ge) wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. InP/Si cells have higher absolute efficiency after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells. In this work, base electron diffusion lengths in the N/P cell are extracted from measured AM0 short-circuit photocurrent at various irradiation levels out to an equivalent 1 MeV fluence of 1017 1 MeV electrons/sq cm for a 1 sq cm 12% BOL InP/Si cell. These values are then checked for consistency by comparing measured Voc data with a theoretical Voc model that includes a dark current term that depends on the extracted diffusion lengths.

Wojtczuk, Steven↗