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Rapid Annealing Of Amorphous Hydrogenated Carbon
Report describes experiments to determine effects of rapid annealing on films of amorphous hydrogenated carbon. Study represents first efforts to provide information for applications of a-C:H films where rapid thermal processing required. Major finding, annealing causes abrupt increase in absorption and concomitant decrease in optical band gap. Most of change occurs during first 20 s, continues during longer annealing times. Extend of change increases with annealing temperature. Researchers hypothesize abrupt initial change caused by loss of hydrogen, while gradual subsequent change due to polymerization of remaining carbon into crystallites or sheets of graphite. Optical band gaps of unannealed specimens on silicon substrates lower than those of specimens on quartz substrates.
Rapid, interface-driven domain orientation in bottlebrush diblock copolymer films during thermal annealing
Thick (>20 μm) films of bottlebrush block copolymers self-assemble within minutes of thermal annealing between hard interfaces. Photonic properties are modified by thickness-dependent gradients of grain size and orientation between the surface and bulk.
p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing
We demonstrate p-type activation of GaN doped by Mg ion implantation, and in situ during metalorganic chemical vapor deposition through sequential short-duration gyrotron microwave heating cycles at temperatures of 1200–1350 °C. GaN is implanted with 1019 cm−3 Mg ions, capped with AlN, and annealed under 3 MPa N2 overpressure in 5 s heating cycles for less than 60 s total using a high-power gyrotron microwave heating source. Through I–V characterization, photoluminescence spectroscopy, and Raman spectroscopy, we study the evolution of electrical properties, optically active point defects, and material strain in response to implantation and annealing. For Mg-implanted samples, increasing annealing temperature is characterized by an increase in the PL substitutional Mg-related peak (UVL) relative to the shallow-donor vacancy-related peak (GL2). Through comparison of implanted and in situ doped samples, it is demonstrated that the origin of compensating VN lies primarily in implantation rather than degradation from the annealing process. Transmission line measurements and diode I–V measurements show a sheet resistance of 1083 kΩ/□ and a hole concentration of 1.23 × 1015 cm−3, respectively, in the Mg-implanted material annealed at 1350 °C. We conclude that temperature-cycled gyrotron annealing at 1350 °C decreases implant-induced compensating point defects and activates Mg to obtain selective p-type conduction.
Fabrication of flexible perovskite solar cells via rapid thermal annealing
Adaptability, lightweight, and low cost of materials make flexible perovskite solar cells essential for the perovskite technology to breach commercial photovoltaic markets. Roll-to-roll manufacturing has great potential for high-throughput perovskite manufacturing; however, conventional annealing methods are not capable of producing flexible perovskite solar cells at scale. Conventional methods are time consuming and may compromise functionality of flexible substrates under tension. Here, we introduce a bladecoated perovskite thin film on flexible ITO-coated PET annealed via rapid thermal annealing (RTA) that reduces post-deposition processing time from ~150 s to ~14 s. As a result, performance was not sacrificed for scalability as a perovskite solar cell was produced with a power conversion efficiency (PCE) of 14.58%.
Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs
A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.
Rapid thermal annealing of indium phosphide compound semiconductors
The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.
Precursor Engineering of All-Inorganic Perovskite Absorber and Rapid Photonic Annealing for Large-Area Highly Stable Perovskite Solar Modules
Currently the all-inorganic perovskites were prepared by toxic dimethylformamide (DMF) as a main solvent, and small-area PSCs were prepared by a simple spin-coating method followed by lengthy thermal annealing. All these issues limited the commercialization of these PSCs. Therefore, it is necessary to develop an eco-friendly all-inorganic perovskite ink that can be coated over large areas at low temperatures followed by rapid annealing for the scale-up manufacturing with high compatibility to the industrial scale sheet-to-sheet or roll-to-roll processes.
Efficient Perovskite Solar Cells Achieved via Rapid Photonic Annealing of all Stacking Layers: Unveiling the Crystallization Energy Window
In this study, we report high-performance perovksite solar cells (PSCs) with rapid photonic annealing (RPA) of all stacking layers, enabled by ultraviolet (UV) light-emitting diode (LED) sources, to replace lengthy and energy-intensive thermal annealing (TA). The UV-LED annealing technique allows for layer-specific annealing, where the selected light source provides a precise UV wavelength for maximizing the amount of light absorption by the target layer. The disparity in optical absorption between the target layer and the underlying films allows the stack of the underlying films to remain relatively unaffected, making this process ideal for heating sensitive substrates. Along with a systematic investigation into the layer-specific annealing mechanism of RPA, the results demonstrated that this UV-LED-based photonic annealing of all stacking layers (7 s for perovskite absorber) can produce PSCs with the power conversion efficiency (PCE) of over 23%, the highest reported among optically annealed PSCs. Moreover, the RPA device retains over 80% of the initial PCE over 1000 h under continuous 1 sun illumination at 55 °C and 30%–60% relative humidity (RH), while TA control device drops to 50% of its initial efficiency. Furthermore, these findings represent significant strides toward achieving rapid, cost-effective, and scalable manufacturing of commercial perovskite photovoltaics (PV).
Scalable manufacturing of quantum light emitters in silicon under rapid thermal annealing
Quantum light sources play a fundamental role in quantum technologies ranging from quantum networking to quantum sensing and computation. The development of these technologies requires scalable platforms, and the recent discovery of quantum light sources in silicon represents an exciting and promising prospect for scalability. The usual process for creating color centers in silicon involves carbon implantation into silicon, followed by rapid thermal annealing. However, the dependence of critical optical properties, such as the inhomogeneous broadening, the density, and the signal-to-background ratio, on centers implantation steps is poorly understood. We investigate the role of rapid thermal annealing on the dynamic of the formation of single color centers in silicon. We find that the density and the inhomogeneous broadening greatly depend on the annealing time. We attribute the observations to nanoscale thermal processes occurring around single centers and leading to local strain fluctuations. Our experimental observation is supported by theoretical modeling based on first principles calculations. The results indicate that annealing is currently the main step limiting the scalable manufacturing of color centers in silicon.
In Situ Characterization of Ferroelectric HfO 2 During Rapid Thermal Annealing
Thermal annealing is critical in governing the phase distribution, and ultimately the electrical properties, of ferroelectric hafnium oxide films. In particular, rapid thermal annealing (RTA) has been shown to favor the formation of ferroelectric crystal phases, but the dynamic behavior of the film over the course of the anneal is not well understood. Herein, synchrotron X-ray diffraction is used to characterize the phase distribution of HfO 2 films deposited by atomic layer deposition (ALD) in situ during RTA, revealing complex phase transformations occurring on the scale of seconds. All samples investigated here transform into a nonmonoclinic phase, which is required for ferroelectric films. However, this phase often converts into the more stable monoclinic phase as annealing proceeds. The kinetic barrier to the transformation to the monoclinic phase during heating is higher than 1 eV f.u. -1 In this work, the initial crystallization into the ferroelectric phase and relatively high barrier to transformation to the nonferroelectric phase suggests that careful control of the thermal annealing profile can greatly increase the ferroelectric fraction of the film. By using a fast ramp rate and a short annealing time above the ferroelectric crystallization temperature, the remanent polarization of a pure HfO 2 film can be increased more than twofold.
Fabrication of Flexible Perovskite Solar Cells via Rapid Thermal Annealing
Adaptability, lightweight, and low cost of materials make flexible perovskite solar cells essential for the perovskite technology to breach commercial photovoltaic market. Roll-to-roll manufacturing has great potential for high-throughput perovskite manufacturing; however, conventional annealing methods are not capable of producing flexible perovskite solar cells at scale. Rapid thermal annealing (RTA), a radiative method, is utilized on roll-to-roll lines within many different industries and has shown promising potential for perovskite annealing. Here, we introduce a blade-coated perovskite thin film on flexible ITO-coated PET annealed via RTA that reduces post-deposition processing time from ~150 seconds to ~14 seconds. Performance was not sacrificed for scalability as a perovskite solar cell was produced with a power conversion efficiency (PCE) of 14.58%.
Raman scattering from rapid thermally annealed tungsten silicide
Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.
Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing
In this work, the evolution of structural, optical and optoelectronic properties of coherently strained Ge 0.883 Sn 0.117 /Ge multiple quantum wells (MQWs) grown by molecular beam epitaxy under rapid thermal annealing (RTA) is systematically investigated. The MQW structure remains fully-strained state with RTA at 400 °C or below and disrupts at higher annealing temperatures due to Sn segregation and interdiffusion of Ge and Sn atoms. The GeSn well layers exhibit the strongest absorption in 2.0–2.4 μm after annealing at 400 °C and become transparent above 1.8 μm after RTA at 600 °C or beyond due to serve Sn segregation. Owing to improved crystal quality after RTA at 400 °C, the dark current of the fabricated metal-semiconductor-metal photodetector is effectively lowered by more than two times. Additionally, the responsivities at 1.55 and 2.0 μm are improved by 4.15 and 3.78 folds, respectively, compared to those of the as-grown sample. Here, the results can be an insightful guidance for the development of high-performance short-wave infrared photonic devices based on Sn-containing group-IV low-dimensional structures.
Rapid Selective Annealing of Cu Thin Films on Si Using Microwaves
A major goal of the semiconductor indurstry is to lower the processing temperatures needed for interconnects in silicon integrated circuits. Typical rapid thermal annealing processes heat the film as well as the substrate, creating device problems.
Antimony nitride discovered by theoretical structure prediction, rapid thermal annealing, and in situ X-ray diffraction
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The potential of quantum annealing for rapid solution structure identification
Abstract The recent emergence of novel computational devices, such as quantum computers, coherent Ising machines, and digital annealers presents new opportunities for hardware-accelerated hybrid optimization algorithms. Unfortunately, demonstrations of unquestionable performance gains leveraging novel hardware platforms have faced significant obstacles. One key challenge is understanding the algorithmic properties that distinguish such devices from established optimization approaches. Through the careful design of contrived optimization tasks, this work provides new insights into the computation properties of quantum annealing and suggests that this model has the potential to quickly identify the structure of high-quality solutions. A meticulous comparison to a variety of algorithms spanning both complete and local search suggests that quantum annealing’s performance on the proposed optimization tasks is distinct. This result provides new insights into the time scales and types of optimization problems where quantum annealing has the potential to provide notable performance gains over established optimization algorithms and suggests the development of hybrid algorithms that combine the best features of quantum annealing and state-of-the-art classical approaches.
The Potential of Quantum Annealing for Rapid Solution Structure Identification [Slides]
This presentation covers a framework for categorizing heuristics including neighborhood size, iterated local search, and performance metrics. The question, "How does Quantum Annealing stack up?" is addressed through Random with Fields (RANF-1), Biased Ferromagnet (BFM), and Corrupted Biased Ferromagnet (CBFM). Concluding thoughts are then given.