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Rare earth alloys spin disorder resistivity in crystalline electric field absence and presence
Collection of reports describes experimental metallurgical studies of nickel aluminide alloys made by rapid-solidification powder-metallurgy process. Process incorporates ultrafine dispersions of hard, stable refractory compounds and rare-earth oxides into alloys. Effects of dispersoids on high-temperature mechanical properties (flow stress, and compressive and tensile creep) of alloys investigated. Results indicate specific additives result in improved strength and ductility.
Computer simulations of a two dimensional lattice of magnetic dipoles are performed on the Connection Machine. The lattice is a discrete model for thin films of amorphous rare-earth transition metal alloys, which have application as the storage media in erasable optical data storage systems. In these simulations, the dipoles follow the dynamic Landau-Lifshitz-Gilbert equation under the influence of an effective field arising from local anisotropy, near-neighbor exchange, classical dipole-dipole interactions, and an externally applied field. Various sources of coercivity, such as defects and/or inhomogeneities in the lattice, are introduced and the subsequent motion of domain walls in response to external fields is investigated.
The surface oxidation processes of thin films of magneto-optic materials, such as the rare-earth transition metal alloys have been studied, starting in ultrahigh vacuum environments, using surface analysis techniques, as a way of modeling the oxidation processes which occur at the base of a defect in an overcoated material, at the instant of exposure to ambient environments. Materials examined have included FeTbCo alloys, as well as those same materials with low percentages of added elements, such a Ta, and their reactivities to both O2 and H2O compared with materials such as thin Fe films coated with ultrathin adlayers of Ti. The surface oxidation pathways for these materials is reviewed, and XPS data presented which indicates the type of oxides formed, and a critical region of Ta concentration which provides optimum protection.
Previous studies and surveys on availability of domestic reserves have shown that chromium is a most critical element within the U.S. metal industry. More precisely, the bulk of chromium is consumed in the production of stainless steels, specifically Type 304 stainless steel (304SS) which contains 18% Cr. The present paper deals with means of reducing chromium in commercial stainless steels by substituting more abundant or less expensive elements with the intent of maintaining the properties of 304SS. The discussion focuses on some of the oxidation and corrosion properties of new substitute stainless steels with only 12% Cr, which represents a potential saving of 33% of the chromium consumed in the production of 304SS. The alloying elements substituted for Cr in 304SS are selected according to their potential for protective oxide formation during high-temperature oxidation; these are Al, Si, Ti, Y, and misch metal which is 99.7% rare-earth metals containing 50 to 55% cerium. Other alloying elements to impart corrosion resistance are Mn, Mo, and V.
The old concept of using the wake of a spacecraft to obtain an ultrahigh vacuum is revisited with a somewhat different emphasis. Since it is possible to configure a wake shield so that a surface of interest does not subtend any walls that could become contaminated, it appears that it should be possible to achieve a contamination-free, ultrahigh vacuum capability with infinite pumping speed even in the presence of high heat loads and moderate gas loads. With the new interest in developing thin films with precision controlled synthetic microstructures such as superlattices, mixed metal oxide high temperature superconductors, rare-earth magneto-optical devices, and nano-crystalline alloys, the ability to work with a variety of different materials without cross contamination should be of significance. This paper analyzes the performance of the conceptual design for a Space Ultravacuum Research Facility (SURF), both in a Shuttle-attached mode and as a free-flyer. It is shown that even in the Shuttle-attached mode, it should be possible to obtain vacuum levels equivalent to 10 to the -10 Torr with O and N2 as the primary constituents. This should be sufficient to demonstrate the feasibility of the concept, particularly the infinite pumping speed and virtual elimination of contamination aspects. As a free-flyer the SURF will be limited primarily by the gas load associated with the process being performed. For chemical beam epitaxy (CBE) it is shown that equivalent vacuum levels of 10 to the -14 Torr should be possible at 300 km.
Report reviews current research in thermoelectric materials with view towards development of materials of greater energy-conversion efficiency. Emphasis on effort to understand and manipulate microstructure to increase thermoelectric figure of merit, Z. Thermoelectric properties of three broad categories of materials discussed. First category includes alloys of group IV elements like silicon and germanium. Second category is rare-earth chalcogenides. Third category includes narrow-band semiconductors, especially boron carbides.
Yttrium scavenging of impurities in tungsten and molybdenum
Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. ZT approx. 1 is not a theoretical limitation although, experimentally, values in excess of one were not achieved. Work has continued with emphasis on higher temperature energy conversion. A number of promising materials have been discovered in which it appears that ZT 1 is realizable. These materials are divided into two classes: (1) the rare-earth chalcogenides which behave as itinerant highly-degenerate n-type semiconductors at room-temperature, and (2) the boron-rich borides, which exhibit p-type small-polaronic hopping conductivity.
Theoretical work of two decades ago adequately explained the transport behavior and effectively guided the development of thermoelectric materials of high conversion efficiencies of conventional semiconductors (e.g., SiGe alloys). The more significant contributions involved the estimaiation of optimum doping concentrations, the reduction of thermal conductivity by solid solution doping and the development of a variety of materials with ZT approx. 1 in the temperature range 300 K to 1200 K. ZT approx. 1 is not a theoretical limitation although, experimentally, values in excess of one were not achieved. Work has continued with emphasis on higher temperature energy conversion. A number of promising materials have been discovered in which it appears that ZT 1 is realizable. These materials are divided into two classes: (1) the rare-earth chalcogenides which behave as itinerant highly-degenerate n-type semiconductors at room-temperature, and (2) the boron-rich borides, which exhibit p-type small-polaronic hopping conductivity.
Scavenging oxygen and nitrogen from tungsten and molybdenum with rare earths
Crystal structure influence on friction, wear, and metal-transfer characteristics of rare earth metals in vacuum
Exact calculation of indirect exchange interaction isotropic and nonisotropic terms in rare earth metals, with free electron model for conduction band