Single-Event Effect Performance of a Commercial ReRAM
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFI.
ReRAM↗
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Single-Event Effect Response of a Commercial ReRAM
We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in peripheral circuits, including the sense amplifier.
commercial-off-the-shelf (COT)↗
Total Ionizing Dose Test Report for the MB85AS4MT ReRAM
This is a Total Ionizing Dose (TID) test report for the Fujitsu Semiconductor MB85AS4MT Resistive Random Access Memory (ReRAM).
Total Ionizing Dose (TID)↗
Reliability Characterization of TaOx-Based Commercial ReRAM in Combination with Radiation
We present reliability data combined with total dose gamma radiation for one of the first commercially available resistive memory devices. These Tantalum Oxide (TaOX)-based resistive memory chips demonstrate operation in dynamic program and erase testing up to ~130 Krad(Si) of 60Co gamma dose. In static and unbiased conditions, the stored data in the memory cells were able to withstand up to 50Mrad(Si) of exposure. The access circuitry, though, seemed less robust to gamma radiation and was able to operate only up to a total dose of 3Mrad(Si). Post exposure reliability as indicated by endurance, cycling error rate, and data retention tests showed no detectable impact from the combination with prior gamma irradiation. Overall, the total dose radiation tolerance of the commercial TaOx-based resistive memory chip appears to be higher than flash memory chips and in agreement with prior tests conducted with single cell resistive memories.
total ionizing dose↗