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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

PANTHER: A Programmable Architecture for Neural Network Training Harnessing Energy-Efficient ReRAM

The wide adoption of deep neural networks has been accompanied by ever-increasing energy and performance demands due to the expensive nature of training them. Additionally, numerous special-purpose architectures have been proposed to accelerate training: both digital and hybrid digital-analog using resistive RAM (ReRAM) crossbars. ReRAM-based accelerators have demonstrated the effectiveness of ReRAM crossbars at performing matrix-vector multiplication operations that are prevalent in training. However, they still suffer from inefficiency due to the use of serial reads and writes for performing the weight gradient and update step. A few works have demonstrated the possibility of performing outer products in crossbars, which can be used to realize the weight gradient and update step without the use of serial reads and writes. However, these works have been limited to low precision operations which are not sufficient for typical training workloads. Moreover, they have been confined to a limited set of training algorithms for fully-connected layers only. To address these limitations, we propose a bit-slicing technique for enhancing the precision of ReRAM-based outer products, which is substantially different from bit-slicing for matrix-vector multiplication only. We incorporate this technique into a crossbar architecture with three variants catered to different training algorithms. To evaluate our design on different types of layers in neural networks (fully-connected, convolutional, etc.) and training algorithms, we develop PANTHER, an ISA-programmable training accelerator with compiler support. Our design can also be integrated into other accelerators in the literature to enhance their efficiency. Our evaluation shows that PANTHER achieves up to 8.02×, 54.21×, and 103× energy reductions as well as 7.16×, 4.02×, and 16× execution time reductions compared to digital accelerators, ReRAM-based accelerators, and GPUs, respectively.

42 ENGINEERING↗
DOE OSTI2025

ReSpike: A Co-Design Framework for Evaluating SNNs on ReRAM-Based Neuromorphic Processors

With Moore’s law approaching its end, traditional von Neumann architectures are struggling to keep up with the exceeding performance and memory requirements of artificial intelligence and machine learning algorithms. Unconventional computing approaches such as neuromorphic computing that leverage spiking neural networks (SNNs) to perform computation are gaining traction and seek the paradigm shift necessary to sustain the increasing demands of modern applications. Novel memory technologies, such as resistive RAM (ReRAM), employ a crossbar architecture that possesses the inherent capability of efficiently computing vector-matrix multiplication—a dominant operation in SNNs. The prospect of naturally mapping SNNs to the crossbar structures provides a unique opportunity for achieving a high-performance, power-efficient neuromorphic system. In this work, we present ReSpike, which is a new framework, behavioral simulator, and architectural design based on ReRAM crossbar architectures, enabling modeling and co-design to achieve efficient execution of SNNs. We drive this co-design forward by quantifying the impact that ReRAM cell nonidealities have on the corresponding accuracy of an SNN application.

Asifuzzaman, Kazi [ORNL] (ORCID:0000000240044791)↗
DOE OSTI2020

3D-ReG: A 3D ReRAM-based Heterogeneous Architecture for Training Deep Neural Networks

Deep neural network (DNN) models are being expanded to a broader range of applications. The computational capability of traditional hardware platforms cannot accommodate the growth of model complexity. Among recent technologies to accelerate DNN, resistive memory (ReRAM)-based processing-in-memory (PIM) emerged as a promising solution for DNN inference due to its high efficiency for matrix-based computation. We face two major technical challenges in extending the use of ReRAM-based accelerators for training: (1) full-precision data is essential in back-propagation; (2) the need to support both feed-forward and back-propagation aggravates the data-movement burden. We propose a heterogeneous architecture named as 3D-ReG, which leverages full-precision GPU to ensure training accuracy and low-overhead 3D integration to provide low-cost data movements. Moreover, we introduce conservative and aggressive task-mapping schemes, which partition the computation phases in different ways to balance execution efficiency and training accuracy. We evaluate 3D-ReG implemented with two 3D integration technologies, through-silicon vias (TSVs) and monolithic inter-tier vias (MIVs), and compare them with GPU-only and PIM-only counterparts. Various GPU-only platforms using two main-memory technologies (DRAM, ReRAM) and three interconnect technologies (2D, TSV, MIV) are evaluated as well. Experimental results show that 3D-ReG can achieve on average 5.64× training speedup and 3.56× higher energy efficiency compared with the GPU with DRAM as main memory, at the cost of 0.05%–3.39% accuracy drop. We define a new metric, gain-loss ratio (GLR), which quantitatively evaluates the capability of a DNN training hardware in terms of the model accuracy and hardware efficiency. The results of our comparison show that the aggressive task-mapping scheme on MIV-based 3D-ReG outperforms the other methods.

Computer Science↗
DOE OSTI2023

SwitchX : Gmin-Gmax Switching for Energy-efficient and Robust Implementation of Binarized Neural Networks on ReRAM Xbars

Memristive crossbars can efficiently implement Binarized Neural Networks (BNNs) wherein the weights are stored in high-resistance states (HRS) and low-resistance states (LRS) of the synapses. We propose SwitchX mapping of BNN weights onto ReRAM crossbars such that the impact of crossbar non-idealities, that lead to degradation in computational accuracy, are minimized. Essentially, SwitchX maps the binary weights in such a manner that a crossbar instance comprises of more HRS than LRS synapses. We find BNNs mapped onto crossbars with SwitchX to exhibit better robustness against adversarial attacks than the standard crossbar mapped BNNs, the baseline. Finally, we combine SwitchX with state-aware training (that further increases the feasibility of HRS states during weight mapping) to boost the robustness of a BNN on hardware. We find that this approach yields stronger defense against adversarial attacks than adversarial training, a state-of the-art software defense. We perform experiments on a VGG16 BNN with benchmark datasets (CIFAR-10, CIFAR-100 and TinyImagenet) and use Fast Gradient Sign Method (ϵ = 0.05 to 0.3) and Projected Gradient Descent (ϵ = $\frac{2}{255}$ to $\frac{32}{255}$, α = $\frac{2}{255}$) adversarial attacks. We show that SwitchX combined with state-aware training can yield upto ~35% improvements in clean accuracy and ~6–16% in adversarial accuracies against conventional BNNs. Furthermore, an important by-product of SwitchX mapping is increased crossbar power savings, owing to an increased proportion of HRS synapses, which is furthered with state-aware training. We obtain upto ~21–22% savings in crossbar power consumption for state-aware trained BNN mapped via SwitchX on 16 × 16 and 32 × 32 crossbars using the CIFAR-10 and CIFAR-100 datasets.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2026

PowerMappeR: Power-Optimized Mapping of SNNs onto ReRAM Crossbars coupled via Packet-Switched NoCs

Many recent efforts in developing hardware-accelerated spiking neural networks (SNNs) are characterized by deep co-design between algorithms, architectures, and devices. Architectural advances overcome device constraints by coupling together many small resistive-RAM (ReRAM) crossbars via a network-on-chip (NoC) for neuromorphic component operation. Concurrently, improved SNN training methods increase accuracy and structural sparsity in networks despite growing problem sizes. Finally, compilers leverage these attributes to minimize area and inter-crossbar communication while mapping large SNNs to sophisticated architectures. However, for compiler-driven co-design to realize increasingly complex and profitable optimizations, a compile-time view of power consumption is critical. We present PowerMappeR to express and optimize over mapping-, architecture-, and device-specific power consumption information. By modeling the dynamic power of well-established components, we develop an integer linear programming (ILP)-based, encoding-agnostic, parametric power estimation model. Using this model, we demonstrate practical improvements in area and inter-crossbar communication by 0%–9.5% and 1.4%–5.1%, respectively. We also limit hotspot formation during optimization, achieving comparable or better results in targeted metrics with up to 96.4%–97.1% restriction of hotspot magnitude. Finally, we introduce profile-guided formulations to reduce worst-case and expected-case hotspot magnitude by 40.7%–69.5% and 40.6%–56.3%, respectively. Optimizing worst-case hotspot magnitude incidentally improves expected-case magnitude by 10.85%–33.45%. Reciprocally, optimizing expected-case magnitude incidentally improves worst-case magnitude by 4.33%–39.87%. Validation against hardware simulators confirms that PowerMappeR can decrease dynamic power consumption by 12.6%–27.3%.

Pohl, Devin [ORNL] (ORCID:0009000040149027)↗
DOE OSTI2024

Ligand Substituent Effects on the Electronic Properties of Lindqvist‐Type Polyoxometalate Multi‐Level‐Switches in the Gas Phase, Solution and on Surfaces

Abstract Although the intrinsic electronic properties of polyoxometalates (POMs) can be greatly influenced by modifying them with organic substituents, their resistive switching behavior on surfaces dependent on the organic substituents remains largely unexplored. In this work, we assessed the importance of electron‐withdrawing and electron‐donating ligand substituents on the material properties of a series of hybrid Lindqvist‐type hexavanadates TBA 2 [V 6 O 13 ((OCH 2 ) 3 CCH 2 OH) 2 ] (TBA 2 V 6 ‐OH), TBA 2 [V 6 O 13 ((OCH 2 ) 3 CMe) 2 ] (TBA 2 V 6 ‐Me), TBA 2 [V 6 O 13 ((OCH 2 ) 3 CNHCOCH 2 Cl) 2 ] (TBA 2 V 6 ‐Cl), and TBA 2 [V 6 O 13 ((OCH 2 ) 3 CNHCOCH 2 ‐OOCC 10 H 15 ) 2 ] (TBA 2 V 6 ‐Ad) as potential resistive random‐access memory (ReRAM) components. Compared to their redox behavior in solution, changing the ligand substituents on surfaces results in no significant effect on the potential and, thus, no effect on the resistance steps in the current‐voltage profiles. However, while the current‐voltage characteristics do not change, the peripheral metal‐free substituents in the trisalkoxide framework of Lindqvist‐type hexavanadate molecules influence the adsorption and switching stability of these POMs on gold. This work highlights the noticeable differences between hexavanadate's redox properties in solution (which follow the trend observed in the gas phase) and hexavanadate's resistive switching properties on conducting surfaces. Importantly, their multi‐state switching behavior is not significantly altered by the different type of substituent at the periphery of the trisalkoxo ligands.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging

Inspired by biological neuromorphic computing, artificial neural networks based on crossbar arrays of bilayer tantalum oxide memristors have shown to be promising alternatives to conventional complementary metal-oxide-semiconductor (CMOS) architectures. In order to understand the driving mechanism in these oxide systems, tantalum oxide films are resistively switched by conductive atomic force microscopy (C-AFM), and subsequently imaged by kelvin probe force microscopy (KPFM) and spatially resolved time-of-flight secondary ion mass spectrometry (ToF-SIMS). These workflows enable induction and analysis of the resistive switching mechanism as well as control over the resistively switched region of the film. In this work it is shown that the resistive switching mechanism is driven by both current and electric field effects. Reversible oxygen motion is enabled by applying low (<1 V) electric fields, while high electric fields generate irreversible breakdown of the material (>1 V). Fully understanding oxygen motion and electrical effects in bilayer oxide memristor systems is a fundamental step toward the adoption of memristors as a neuromorphic computing technology.

36 MATERIALS SCIENCE↗