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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Space Radiation Effects on SiC Power Device Reliability

Heavy-ion radiation can result in silicon carbide power device degradation and/or catastrophic failure. Test procedures and data interpretation must consider the impact that heavy-ion induced off-state leakage current increases will have on subsequent single-event effect susceptibility and testability. On orbit, reliable performance in the presence of increased off-state leakage currents due to cumulative ion-induced non-catastrophic single-event effects must be assured over the mission lifetime. This work presents a large body of heavy-ion test data for different diode, power MOSFET, and JFET devices. Susceptibility to single-event effects is compared between SiC and Si power devices. Initial recommendations on heavy-ion radiation test methods for silicon carbide power devices are made and radiation hardness assurance is discussed with the goal of moving one step closer to reliably getting this technology off the ground into a broad array of spacecraft and instruments that will benefit from its unique capabilities.

diode↗
NASA NTRS1998

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Neudeck, Philip G.↗
NASA NTRS1996

Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes

SiC-based high temperature power devices are being developed for aerospace systems which will require high reliability. One behavior crucial to power device reliability. To date, it has necessarily been assumed to date is that the breakdown behavior of SiC pn junctions will be similar to highly reliable silicon-based pn junctions. Challenging this assumption, we report the observation of anomalous unreliable reverse breakdown behavior in moderately doped (2-3 x 10(exp 17) cm(exp -3)) small-area 4H- and 6H-SiC pn junction diodes at temperatures ranging from 298 K (25 C) to 873 K (600 C). We propose a mechanism in which carrier emission from un-ionized dopants and deep level defects leads to this unstable behavior. The fundamental instability mechanism is applicable to all wide bandgap semiconductors whose dopants are significantly un-ionized at typical device operating temperatures.

Neudeck, Philip G.↗
NASA NTRS2015

Proof-of-Concept Experiments on a Gallium-Based Ignitron for Pulsed Power Applications

Ignitrons are electrical switching devices that operate at switching times that are on the order of microseconds, can conduct high currents of thousands of amps, and are capable of holding off tens of thousands of volts between pulses. They consist of a liquid metal pool within an evacuated tube that serves both the cathode and the source of atoms and electrons for an arc discharge. Facing the liquid metal pool is an anode suspended above the cathode, with a smaller ignitor electrode tip located just above the surface of the cathode. The ignitron can be charged to significant voltages, with a potential difference of thousands of volts between anode and cathode. When an ignition pulse is delivered from the ignitor electrode to the cathode, a small amount of the liquid metal is vaporized and subsequently ionized, with the high voltage between the anode and cathode causing the gas to bridge the gap between the two electrodes. The electrons and ions move rapidly towards the anode and cathode, respectively, with the ions liberating still more atoms from the liquid metal cathode surface as a high-current plasma arc discharge is rapidly established. This arc continues in a self-sustaining fashion until the potential difference between the anode and cathode drops below some critical value. Ignitrons have been used in a variety of pulsed power applications, including the railroad industry, industrial chemical processing, and high-power arc welding. In addition, they might prove useful in terrestrial power grid applications, serving as high-current fault switches, quickly shunting dangerous high-current or high-voltage spikes safely to ground. The motivation for this work stemmed from the fact that high-power, high-reliability, pulsed power devices like the ignitron have been used for ground testing in-space pulsed electric thruster technologies, and the continued use of ignitrons could prove advantageous to the future development and testing of such thrusters. Previous ignitron designs have used mercury as the liquid metal cathode, owing to its presence as a liquid at room temperatures and a vapor pressure of 10 Pa (75 mtorr) at room temperature. While these are favorable properties, there are obvious environmental and personal safety concerns with the storage, handling, and use of mercury and its compounds. The purpose of the present work was to fabricate and test an ignitron that used as its cathode an alternate liquid metal that was safe to handle and store. To that end, an ignitron test article that used liquid gallium as the cathode material was developed and tested. Gallium is a metal that has a melting temperature of 29.76 C, which is slightly above room temperature, and a boiling point of over 2,300 C at atmospheric pressure. This property makes gallium the element with the largest relative difference between melting and boiling points. Gallium has a limited role in biology, and when ingested, it will be subsequently processed by the body and expelled rather than accumulating to toxic levels. The next section of this Technical Memorandum (TM) provides background information on the development of mercury-based ignitrons, which serves as the starting point for the development of the gallium-based variant. Afterwards, the experimental hardware and setup used in proof-of-concept testing of a basic gallium ignitron are presented. Experimental data, consisting of discharge voltage and current waveforms as well as high-speed imaging of the gallium arc discharge in the gallium ignitron test article, are presented to demonstrate the efficacy of the concept. Discussion of the data and suggestions on improvements for future iterations of the design are presented in the final two sections of this TM.

Ali, H. K.↗
NASA NTRS1983

Free-piston stirling engine endurance test program

The Free-Piston Stirling Engine (FPSE) has the potential to be a long-lived, highly reliable, power conversion device attractive for many product applications such as space, residential, or remote-site power. The purpose of endurance testing the FPSE is to demonstrate its potential for long life. The endurance program was directed at obtaining 1000 operational hours under various test conditions: low power, full stroke, duty cycle, and stop/start. Critical performance parameters were measured to note any change and/or trend. Inspections were conducted to measure and compare critical seal/bearing clearance. The engine performed well throughout the program, completing the 1000 hours. Hardware inspection, including the critical clearances, showed no significant change in hardware or clearance dimensions. The performance parameters did not exhibit any increasing or decreasing trends. The test program confirms the potential for long-life FPSE applications. Additional testing is planned to increase the test hours to 10,000.

Dochat, G.↗
NASA NTRS1985

Free-piston Stirling engine/linear alternator 1000-hour endurance test

The Free Piston Stirling Engine (FPSE) has the potential to be a long lived, highly reliable, power conversion device attractive for many product applications such as space, residential or remote site power. The purpose of endurance testing the FPSE was to demonstrate its potential for long life. The endurance program was directed at obtaining 1000 operational hours under various test conditions: low power, full stroke, duty cycle and stop/start. Critical performance parameters were measured to note any change and/or trend. Inspections were conducted to measure and compare critical seal/bearing clearances. The engine performed well throughout the program, completing more than 1100 hours. Hardware inspection, including the critical clearances, showed no significant change in hardware or clearance dimensions. The performance parameters did not exhibit any increasing or decreasing trends. The test program confirms the potential for long life FPSE applications.

Rauch, J.↗
NASA NTRS2004

Review of Computational Stirling Analysis Methods

Nuclear thermal to electric power conversion carries the promise of longer duration missions and higher scientific data transmission rates back to Earth for both Mars rovers and deep space missions. A free-piston Stirling convertor is a candidate technology that is considered an efficient and reliable power conversion device for such purposes. While already very efficient, it is believed that better Stirling engines can be developed if the losses inherent its current designs could be better understood. However, they are difficult to instrument and so efforts are underway to simulate a complete Stirling engine numerically. This has only recently been attempted and a review of the methods leading up to and including such computational analysis is presented. And finally it is proposed that the quality and depth of Stirling loss understanding may be improved by utilizing the higher fidelity and efficiency of recently developed numerical methods. One such method, the Ultra HI-Fl technique is presented in detail.

Dyson, Rodger W.↗
NASA NTRS2004

How to Overcome Numerical Challenges to Modeling Stirling Engines

Nuclear thermal to electric power conversion carries the promise of longer duration missions and higher scientific data transmission rates back to Earth for a range of missions, including both Mars rovers and deep space missions. A free-piston Stirling convertor is a candidate technology that is considered an efficient and reliable power conversion device for such purposes. While already very efficient, it is believed that better Stirling engines can be developed if the losses inherent in current designs could be better understood. However, they are difficult to instrument and so efforts are underway to simulate a complete Stirling engine numerically. This has only recently been attempted and a review of the methods leading up to and including such computational analysis is presented. And finally it is proposed that the quality and depth of Stirling loss understanding may be improved by utilizing the higher fidelity and efficiency of recently developed numerical methods. One such method, the Ultra HI-FI technique is presented in detail.

Dyson, Rodger W.↗
NASA NTRS1996

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

Neudeck, Philip G.↗
NASA NTRS2002

Power-Efficient, High-Current-Density, Long-Life Thermionic Cathode Developed for Microwave Amplifier Applications

A power-efficient, miniature, easily manufactured, reservoir-type barium-dispenser thermionic cathode has been developed that offers the significant advantages of simultaneous high electron-emission current density (>2 A/sq cm) and very long life (>100,000 hr of continuous operation) when compared with the commonly used impregnated-type barium-dispenser cathodes. Important applications of this cathode are a wide variety of microwave and millimeter-wave vacuum electronic devices, where high output power and reliability (long life) are essential. We also expect it to enable the practical development of higher purveyance electron guns for lower voltage and more reliable device operation. The low cathode heater power and reduced size and mass are expected to be particularly beneficial in traveling-wave-tube amplifiers (TWTA's) for space communications, where future NASA mission requirements include smaller onboard spacecraft systems, higher data transmission rates (high frequency and output power) and greater electrical efficiency.

Wintucky, Edwin G.↗
NASA NTRS1979

The impact of rare earth cobalt permanent magnets on electromechanical device design

Specific motor designs which employ rare earth cobalt magnets are discussed with special emphasis on their unique properties and magnetic field geometry. In addition to performance improvements and power savings, high reliability devices are attainable. Both the mechanism and systems engineering should be aware of the new performance levels which are currently becoming available as a result of the rare earth cobalt magnets.

Fisher, R. L.↗
NASA NTRSDate not supplied

Power System Redundancy Design Trends for All-Electric eVTOL Quadrotors

Electrical vertical takeoff and landing (eVTOL) vehicles promise to enable a variety of new local and intraregional air transport missions. However, there are significant challenges that must be solved to enable their use. One challenge is the relatively low reliability of power components (e.g. motors, power electronic devices, and batteries). No clear development path to create reliable eVTOL power systems has been articulated in the literature, though it is generally assumed redundancy is part of the solution. This work proposes an analysis process to examine the redundancy design space and select mass optimal designs for eVTOL power systems. The process is applied to a six passenger quadrotor vehicle, and results are used to highlight redundancy design trends for this class of vehicle. This process and associated data can help vehicle designers more effectively develop eVTOLs that meet reliability requirements.

Electric vertical takeoff and landing↗
NASA NTRSDate not supplied

Power System Redundancy Design Trends for All-Electric eVTOL Quadrotors

Electrical vertical takeoff and landing (eVTOL) vehicles promise to enable a variety of new local and intraregional air transport missions. However, there are significant challenges that must be solved to enable their use. One challenge is the relatively low reliability of power components (e.g. motors, power electronic devices, and batteries). No clear development path to create reliable eVTOL power systems has been articulated in the literature, though it is generally assumed redundancy is part of the solution. This work proposes an analysis process to examine the redundancy design space and select mass optimal designs for eVTOL power systems. The process is applied to a six passenger quadrotor vehicle, and results are used to highlight redundancy design trends for this class of vehicle. This process and associated data can help vehicle designers more effectively develop eVTOLs that meet reliability requirements.

Electric vertical takeoff and landing↗
NASA NTRS2017

Remotely Powered Reconfigurable Receiver for Extreme Sensing Platforms

Unmanned space programs are currently used to enable scientists to explore and research the furthest reaches of outer space. Systems and methods for low power communication devices in accordance with embodiments of the invention are disclosed, describing a wide variety of low power communication devices capable of remotely collecting, processing, and transmitting data from outer space in order to further mankind's goal of exploring the cosmos. Many embodiments of the invention include a Flash-based FPGA, an energy-harvesting power supply module, a sensor module, and a radio module. By utilizing technologies that withstand the harsh environment of outer space, more reliable low power communication devices can be deployed, enhancing the quality and longevity of the low power communication devices, enabling more data to be gathered and aiding in the exploration of outer space.

Sheldon, Douglas J.↗
NASA NTRS2000

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

Kuczmarski, Maria A.↗
NASA NTRS1984

The 20 GHz solid state transmitter design, impatt diode development and reliability assessment

A single drift gallium arsenide (GaAs) Schottky barrier IMPATT diode and related components were developed. The IMPATT diode reliability was assessed. A proof of concept solid state transmitter design and a technology assessment study were performed. The transmitter design utilizes technology which, upon implementation, will demonstrate readiness for development of a POC model within the 1982 time frame and will provide an information base for flight hardware capable of deployment in a 1985 to 1990 demonstrational 30/20 GHz satellite communication system. Life test data for Schottky barrier GaAs diodes and grown junction GaAs diodes are described. The results demonstrate the viability of GaAs IMPATTs as high performance, reliable RF power sources which, based on the recommendation made herein, will surpass device reliability requirements consistent with a ten year spaceborne solid state power amplifier mission.

Picone, S.↗
NASA NTRS2001

Electronic Components and Systems for Cryogenic Space Applications

Electronic components and systems capable of operation at cryogenic temperatures are anticipated in many future NASA space missions such as deep space probes and planetary surface exploration. For example, an unheated interplanetary probe launched to explore the rings of Saturn would reach an average temperature near Saturn of about - 183 C. In addition to surviving the deep space harsh environment, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing payload development and launch costs. Terrestrial applications where components and systems must operate in low temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation system, and arctic exploration. An on-going research and development program at the NASA Glenn Research Center focuses on the development of reliable electronic devices and efficient power systems capable of surviving in low temperature environments. An overview of the program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained from in-house component testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Patterson, R. L.↗