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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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11 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Transformer coupled toroidal wave-heated remote plasma sources operating in Ar/NF 3 mixtures

Remote plasmas are used in semiconductor device manufacturing as sources of radicals for chamber cleaning and isotropic etching. In these applications, large fluxes of neutral radicals (e.g. F, O, Cl, H) are desired with there being negligible fluxes of potentially damaging ions and photons. One remote plasma source (RPS) design employs toroidal, transformer coupling using ferrite cores to dissociate high flows of moderately high pressure (up to several Torr) electronegative gases. In this paper, results are discussed from a computational investigation of moderate pressure, toroidal transformer coupled RPS sustained in Ar and Ar/NF 3 mixtures. Operation of the RPS in 1 Torr (133 Pa) of argon with a power of 1.0 kW at 0.5 MHz and a single core produces a continuous toroidal plasma loop with current continuity being maintained dominantly by conduction current. Operation with dual cores introduces azimuthal asymmetries with local maxima in plasma density. Current continuity is maintained by a mix of conduction and displacement current. Operation in NF 3 for the same conditions produces essentially complete NF 3 dissociation. Electron depletion as a result of dissociative attachment of NF 3 and NF x fragments significantly alters the discharge topology, confining the electron density to the downstream portion of the source where the NFx density has been lowered by this dissociation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. I. Plasma source and critical fluxes

Highly selective plasma etching of silicon nitride (Si 3 N 4 ), while not etching silicon dioxide (SiO 2 ), is a critical step in the fabrication of microelectronics devices. In many applications, this etching must be damage-free and isotropic, which then motivates the use of remote plasmas where the reactants interacting with the substrate are dominantly neutral species. In this paper and Paper II, mechanisms for highly selective Si 3 N 4 etching in remote plasmas are discussed based on results from experiments and simulations. It has been shown experimentally that high Si 3 N 4 /SiO 2 etch selectivity (≈380) can be achieved in the downstream effluent of an NF 3 /N 2 /O 2 /H 2 plasma. The authors found that H2 plays a principal role in the reaction mechanism as Si 3 N 4 /SiO 2 selectivity shows a sharp maximum as a function of the H2 flow rate. Based on this observation, and measured densities of F-atoms and H2 in the process chamber, a mechanism of selective Si 3 N 4 /SiO 2 etching is proposed in which HF molecules in vibrationally excited states accelerate etching reactions. A reaction mechanism for NF 3 /N 2 /O 2 /H 2 plasmas and its afterglow was developed to computationally determine the species densities and fluxes on the wafer level, validated by comparing with experimentally measured F-atom and H 2 densities. The calculated species densities and fluxes were used as input to an analytical model of Si 3 N 4 and SiO 2 etching based on the results of quantum chemistry simulations. This paper presents experimental results (etching data and species densities), the reaction mechanism for NF 3 /N 2 /O 2 /H 2 plasmas, and the results of simulations of gas phase chemistry. Quantum chemistry simulations of elementary etching reactions, description of the analytical model of Si 3 N 4 and SiO 2 etching, calculations of the etch rates, and Si 3 N 4 and SiO 2 selectivity with this model are presented in Paper II.

42 ENGINEERING↗
DOE OSTI2020

Etching of Si 3 N 4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

An etching system based on the interaction of electrons extracted from a direct current (DC) hollow-cathode (HC) Ar plasma and injected towards a Si3N4 covered silicon substrate located in the downstream reactive environment created by an additional remote CF 4 /O 2 plasma source was developed and evaluated. By controlling the properties of the injected beam electrons, this approach allows to deliver energy to a surface functionalized by exposure to reactive species, and initiate surface etching. The energy of the primary beam electrons is controlled by the acceleration voltage relative to the HC discharge. Ar atoms flow from the high-pressure HC discharge into the low pressure downstream reactive environment in the process chamber. For an acceleration voltage greater than the ionization potential of Ar and/or process gas species, the energetic primary beam electrons produce a secondary plasma in the process chamber, and can also cause additional dissociation. We have characterized the properties of the secondary plasma and also surface etching of Si 3 N 4 as a function of process parameters, including acceleration voltage (0-80 V), discharge current of the HC discharge (1-2 A), pressure (3.5-20 mTorr), source to substrate distance (1.5 to 5 cm), and feed gas composition (20% and 80% O2 in CF 4 /O 2 ). The electron energy probability function (EEPF) measured with a Langmuir probe about 2.5 cm below the extraction ring suggests several major groups of electrons for this situation, including high energy primary beam electrons with an energy that varies as the acceleration voltage is changed and low energy electrons produced by beam electron-induced ionization of the Ar gas in the process chamber. When a remote CF 4 /O 2 plasma is additionally coupled to the process chamber, Si 3 N 4 surfaces can be functionalized, and by varying the energy of the beam electrons, Si 3 N 4 etching can be induced by electron-neutral synergy effect with plasma-surface interaction. For conditions without beam electron injection, the remote plasma etching rate (ER) of Si 3 N 4 depends strongly on the O 2 concentration in the CF 4 /O 2 processing gas mixture and can be suppressed for O 2 -rich process conditions by the formation of a SiONF passivation layer on the Si 3 N 4 surface. The combination of the HC electron beam source with the remote plasma source (HCEB-RP) makes it possible to induce Si 3 N 4 etching for O 2 -rich remote plasma conditions where remote plasma by itself produces negligible Si 3 N 4 etching. The electron enhanced etching of Si 3 N 4 depends strongly on O 2 /CF 4 mixing ratio reflecting changing arrival rates of O and F species at the surface. Optical emission spectroscopy was used to estimate the ratio of gas phase F and O densities and found to be controlled by the gas mixing ratio and independent of HC EB operating conditions. At this time the detailed sequence of events operative in the etching mechanism is unclear. While the increase of the electron energy is ultimately responsible for initiating surface etching, at present we cannot rule out a role of ions from the simultaneously produced secondary plasma in plasma surface interaction mechanisms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Compact, portable, laser induced fluorescence diagnostic for laboratory plasma sources

As diagnostic groups are increasingly called upon to participate in experimental campaigns at remote facilities, there is a need to develop portable versions of plasma diagnostic systems. One such diagnostic is laser induced fluorescence (LIF). Here, we describe a portable LIF apparatus that eliminates the need for an optical table, beam splitters, and an optical chopper. All of the light exiting the laser system is coupled through optical fibers to the experiment and housekeeping diagnostics. Here, the collected light is coupled through an optical fiber as well. A key feature is modulation of the tapered amplifier current instead of physical modulation of the laser output. Using this portable LIF system, measurements of ion temperature, ion flow, and relative metastable ion density are reported for two different remote experiments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si 3 N 4 and Si etching

A material etching system was developed by combining beam electron injection from a direct current (DC) hollow-cathode (HC) electron source with the downstream reactive environment of a remote CF 4 /O 2 low temperature plasma. The energy of the injected beam electrons is controlled using an acceleration electrode biased positively relative to the HC Argon discharge. For an acceleration voltage greater than the ionization potential of Ar, the extracted primary electrons can produce a secondary plasma in the process chamber. We characterized the properties of the secondary plasma by performing Langmuir probe measurements of the electron energy probability function (EEPF) 2.5 cm below the extraction ring. The data indicate the existence of two major groups of electrons, including electrons with a primary beam electron energy which varies as the acceleration voltage is varied, along with low energy electrons produced by ionization of the Ar gas atoms in the process chamber by the injected beam electrons. When combining the HC Ar beam electron with a remote CF 4 /O 2 electron cyclotron wave resonance (ECWR) plasma, the EEPF of both the low energy plasma electron and beam electron components decreases. Additionally, we studied surface etching of Si3N4 and poly-crystalline Si (poly-Si) thin films as a function of process parameters, including the acceleration voltage (0-70 V), discharge current of the HC discharge (1-2 A), pressure (2- 100 mTorr), source to substrate distance (2.5 to 5 cm), and feed gas composition (with or without CF 4 /O 2 ). The direction of the incident beam electrons was perpendicular to the surface. Si 3 N 4 and poly-crystalline silicon etching are seen and indicate an electronneutral synergy effect. No/little remote plasma spontaneous etching was observed for the conditions used in this study, and the etching is confined to the substrate area irradiated by the injected beam electrons. The electron etched Si 3 N 4 surface etching rate profile distribution is confined within a ~30 mm diameter circle, which is slightly broader than the area for which poly-Si etching is seen, and coincides closely with the spatial profile of beam electrons as determined by the Langmuir probe measurements. The magnitude of poly-Si etching rate is by a factor of two times smaller than the Si 3 N 4 etching rate. In this paper, we discuss possible explanations of the data and the role of surface charging.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

First data and preliminary experimental results from a new Doppler backscattering system on the MAST-U spherical tokamak

Abstract A new Doppler backscattering (DBS) system, consisting of Q-band and V-band, has been installed and achieved its first data on the MAST-U spherical tokamak. The Q-band and V-band have separate microwave source systems, but share the same optical front-end components. The Q-band and V-band sources simultaneously generate eight (34, 36, 38, 40, 42, 44, 46 and 48 GHz) and seven (52.5, 55, 57.5, 60, 62.5, 65 and 67.5 GHz) fixed frequency probe beams, respectively. These frequencies provide a large range of radial positions from the low-field-side edge plasma to the core, and possibly to the high-field-side edge, depending on the plasma conditions. The quasi-optical system consists of a remotely-tunable polarizer, a focusing lens and a remotely-steerable mirror. By steering the mirror, the system provides remote control of the probed density fluctuation wavenumber, and allow the launch angle to match the magnetic field. The range of accessible turbulence wavenumbers (k θ ) is reasonably large with normalized wavenumberk θ ρ s ranging from <0.5 to 9. The first data acquired by this DBS system is validated by comparing with the data from the other DBS system on MAST-U (introduced in ref. [21]). An example of measuring the velocity profile spanning from the edge to the center in a high-density plasma is presented, indicating the robust capabilities of the integrated Q-band and V-band DBS systems.

Instruments & Instrumentation↗
DOE OSTI2025

Remote detection of radioactive material using a short-pulse CO 2 laser

Detection of radioactive material at distances greater than the radiated particle range is an important goal with applications in areas such as national defense and disaster response. Here, we demonstrate avalanche-breakdown-based remote detection of a 3.6 mCi α-particle source at a standoff distance of 10 m, using 70 ps, long-wave infrared (λ = 9.2 µm) CO 2 laser pulses. This is ∼10 times longer than our previous results using a mid-IR laser. The primary detection method is direct backscatter from microplasmas generated in the laser focal volume. The backscatter signal is amplified as it propagates back through the CO 2 laser chain, enhancing sensitivity by >100 times. Here we also characterize breakdown plasmas with fluorescence imaging, and present a simple model to estimate backscattered signals as a function of the seed density profile in the laser focal volume. All of this is achieved with a relatively long-drive laser focal geometry (f/200) that is readily scalable to >100 m.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Wave and Particle Analysis of Z-Mode and O-Mode Emission in the Jovian Inner Magnetosphere

We report some of the most intense Z-mode and O-mode observations obtained by the Juno spacecraft while in orbit about Jupiter in a low to mid-latitude region near the inner edge of the Io torus. We have been able to estimate the density of the plasma in this region based on the lower frequency cutoff of the observed Z-mode emission. The results are compatible with the electron density measurements of the Jovian Auroral Distributions Experiment (JADE), on board the Juno spacecraft, if we account for unmeasured cold plasma. Direction-finding measurements indicate that the Z- and O-mode emission have distinct source regions. We have also used the measured phase space density of the JADE and the Jupiter energetic particle detector instruments to calculate estimated local growth rates of the observed O-mode and Z-mode emission assuming a loss cone instability and quasilinear analysis. The results suggest the emissions were observed near, but not within, a source region, and the free energy source is consistent with a loss cone. We have thus carried out the quasilinear wave analysis of the assumed remote Z- and O-mode wave growths. It is shown that the remotely generated waves, propagated through an inhomogeneous medium to the satellite location, may account for the observed wave characteristics. The importance of Z-mode in accelerating electrons in the inner Jovian magnetosphere makes these new wave mode confirmations at Jupiter of particular interest.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2022

Development of Laser-Induced Breakdown Spectroscopy for the Californium-252 Supply Program

Calibration-free–laser-induced breakdown spectroscopy (CF-LIBS) is suggested as an alternative to traditional LIBS because it does not rely on calibration curves and instead relies on previously reported parameters called transition probabilities. Transition probabilities are fundamental parameters that describe the probability a specific transition from an upper energy to a lower energy will occur. These values act as internal calibrations and allow concentrations to be calculated based on the plasma temperature and electron density, which can be determined from Saha-Boltzmann methods. CF-LIBS provides the ability to perform elemental concentration estimations on samples without the need for chemical dilutions and only nanograms of material are ablated into the plasma. These benefits can be applied remotely inside hot cells, glove boxes, and radiation hoods through optical fibers. This report summarizes recent efforts to develop CF-LIBS methods for future applications within Oak Ridge National Laboratory’s radioisotope production portfolio, such as the Cf-252 Supply Program. Summaries are provided for the developed Python scripts for data analysis and two studies employing these programs to determine unreported transition probabilities of relevant lanthanides. Additionally, a review of fiber-delivered LIBS and a discussion of a LIBS fiber probe design are provided.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2021

Laser-induced fluorescence of filament-produced plasmas

Self-guided ultrafast laser filaments are a promising method for laser beam delivery and plasma generation for standoff and remote detection of elements and isotopes via filament-induced breakdown spectroscopy (FIBS). Yet, there are several challenges associated with the practical application of FIBS, including delivery of sufficient laser energy at the target for generating plasma with a copious amount of emission signals for obtaining a high signal-to-noise ratio. Here, in this study, we use laser-induced fluorescence (LIF) to boost the emission signal and reduce self-reversal in the spectral profiles. Ultrafast laser filaments were used to produce plasmas from an Al 6061 alloy target at various standoff distances from 1 to 10 m. For LIF emission enhancement, a narrow linewidth continuous-wave laser was used in resonance with a 394.40 nm Al I resonant transition, and the emission signal was monitored from the directly coupled transition at 396.15 nm. Emission signal features of Al I are significantly enhanced by resonant excitation. In addition, LIF of filament ablation plumes reduces the self-reversal features seen in the thermally excited spectral profiles. Time-resolved two-dimensional fluorescence spectroscopy was performed for evaluating the optical saturation effects, which are found to be non-negligible due to high Al atomic densities in the filament-produced plasmas.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

The spherical tokamak advanced reactor (STAR) fusion power plant design

Scientific and technical advancements have been made that improve fusion’s prospects to provide a new energy source, showing enhanced plasma confinement conditions with plasma temperatures reaching or exceeding 100 million degrees. Overshadowing this progress is the challenge involved in developing an economically viable fusion power plant design. Many proposed next-step DEMO and pilot plant designs are extensions of existing physics-focused experimental devices defined to understand and control plasma operations to achieve and sustain a fusion reaction. Transitioning scientific and technical advancements into a functional power plant requires a dedicated focus on architectural designs that integrate diverse technologies, while optimizing physics conditions, with a focus on economic viability. This holistic approach is essential in turning the promise of fusion energy into a reality. The Spherical Tokamak Advanced Reactor (STAR) is a fusion power plant conceptual design with the architectural focus that strives to balance physics, engineering, and cost considerations. In conclusion, it has been set up to introduce relevant physics, engineering and concept features that an intermediate pilot plant might follow, with the goal of meeting system performances and economic requirements that lead to a commercially competitive fusion power plant.

Blanket segmentation↗