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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗
DOE OSTI2023

Results from the First Field Test of a Ruggedized Continuous Holdup Monitor

A first field test of the inexpensive and ruggedized online holdup monitor under development at the US Department of Energy’s Oak Ridge National Laboratory (ORNL) was performed in September of 2023 with highly successful results. ORNL staff collaborated with personnel at the National Fuel Services (NFS) to place two battery-powered detector units at the facility, one on a fuel processing line and the other on a HEPA filter. Both units collected gamma-ray counts per second, temperature, humidity, and battery power data every 5 s seconds over the course of 19 days. Analyzed results from the measurements were discussed with NFS personnel after the units were removed. Vendor feedback on the units was overwhelmingly positive with an expressed desire to deploy finished units at the facility and an open invitation for testing future prototypes.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

( Invited ) Ruggedness of SiC and GaN Power Transistors in Switching Based Tests

Currently, a spectrum of reliability tests are being performed by both device manufacturers and end users. Many of these qualification tests are operated within the device safe-operating-area (SOA), however, the devices often undergo dynamic events in many converter applications that can exceed the SOA boundaries. This paper presents our recent work on quantifying the out-of-SOA robustness of GaN power high-electron-mobility transistors (HEMTs) and SiC power MOSFETs by switching based tests. The unclamped inductive switching stresses are applied to p-gate GaN HEMTs to evaluate their surge-energy and overvoltage robustness. The continuous, hard-switching, turn-off stresses are applied to SiC MOSFETs to evaluate their overvoltage switching robustness. As a result, both experiments demonstrate the robustness of SiC and GaN devices under out-of-SOA switching events, and the physics of degradation and failure are understood.

42 ENGINEERING↗
DOE OSTI2026

Ruggedized Acoustic Tool for High-Temperature Wellbore Integrity Evaluation in Harsh Geothermal Environments [Slides]

This presentation covers the development of a high-temperature well integrity evaluation tool that (1) can operate in high-temperature EGS boreholes to provide consistent, high-resolution evaluation information, (2) can operate without active cooling or substantial mitigation of borehole conditions, and (3) can provide high-fidelity data to adequately characterize conditions that may present safety hazards, risk to the environment, and efficacy of wellbore construction for long-term operation.

15 GEOTHERMAL ENERGY↗
DOE OSTI2021

The Shortwave Spectral Radiometer for Atmospheric Science: Capabilities and Applications from the ARM User Facility

Industry advances have greatly reduced the cost and size of ground-based shortwave (SW) sensors for the ultraviolet, visible, and near-infrared spectral ranges that make up the solar spectrum, while simultaneously increasing their ruggedness, reliability, and calibration accuracy needed for outdoor operation. These sensors and collocated meteorological equipment are an important part of the U.S. Department of Energy (DOE) Atmospheric Radiation Measurement (ARM) User Facility, which has supported parallel integrated measurements of atmospheric and surface properties for more than two decades at fixed and mobile sites around the world. The versatile capability of these ground-based measurements includes 1) rich spectral information required for retrieving cloud and aerosol microphysical properties, such as cloud phase, cloud particle size, and aerosol size distributions, and 2) high temporal resolution needed for capturing fast evolution of cloud microphysical properties in response to rapid changes in meteorological conditions. Here we describe examples of how ARM's spectral radiation measurements are being used to improve understanding of the complex processes governing microphysical, optical, and radiative properties of clouds and aerosol.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2025

Electric Drive Technologies Consortium (EDTC)/ Cost competitive, high-Performance, highly Reliable (CPR) Power Devices on 4H-SiC (Final Report)

4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.

42 ENGINEERING↗
DOE OSTI2023

A heat flux sensor leveraging the transverse Seebeck effect in elemental antimony

Certain configurations of anisotropic single crystal materials can generate a thermoelectric voltage orthogonal to an induced temperature gradient. This phenomenon is known as the Transverse Seebeck Effect (TSE) and can be leveraged to fabricate simple and robust heat flux sensors. Only a small number of materials have been considered as TSE-based transducers and, among these, few have been developed into sensors with ruggedization against chemical and mechanical degradation. Here, we report on the fabrication and characterization of a rugged TSE-based heat flux sensor using prismatic antimony single crystals. The heat flux sensor was tested under static and dynamic heating scenarios. The sensor has a linear responsivity of 16.8 µV/(W/cm2) to heat fluxes spanning more than two orders of magnitude and a time constant of 4.4 s. The sensor’s response to localized heating, probed with a laser scanning technique, validated that the transduction mechanism is primarily the TSE by ruling out a sizable contribution from the conventional Seebeck effect. Finite element analysis corroborated that components used in the sensor package are the primary determinants of the time constant and the decrement of the responsivity from its theoretical maximum. Design principles that may be applied to elicit a faster transient response or higher responsivity are proposed. Furthermore, the results establish single crystal antimony as a promising transducer material for heat flux measurement systems and demonstrate potential effects of ruggedization on sensor performance.

36 MATERIALS SCIENCE↗
DOE OSTI2021

SD-WAN Evaluation Criteria for a Defense Information Systems Network Expeditionary Customer Edge

The Defense Information Systems Agency (DISA) has identified a service provision gap midway between the capacity and capability of a Defense Information Systems Network (DISN) transport Edge Points of Presence (POP) and U.S. Department of Defense (DoD) Enterprise Classified Travel Kit (DECTK). Some deployed force 100-user Tactical Operations Centers are in field locations far removed from the DISN transport core, in challenging environmental conditions with limitations on space, weight, power, and cooling for network equipment. As part of a multi-phase project, Pacific Northwest National Laboratory (PNNL) will gather and analyze requirements, design, develop, prototype, and test a miniaturized and ruggedized DISN Customer Edge POP scaled to support approximately 100 users in a field Tactical Operations Center. An Expeditionary Customer Edge (ECE) will be more suitable for field deployment than a DISN transport Edge POP, using ruggedized hardware and network function virtualization (NFV) to operate in challenging field environmental conditions, plus reduce weight, power, and cooling requirements. A key enabling technology for ECE is Software Defined Wide Area Networking (SD-WAN). This document provides: • A brief overview of SD-WAN use cases and how they apply to ECE • How SD-WAN technology compares to existing networks like DISN that use Optical Transport Networking (OTN) and Multiprotocol Label Switching (MPLS) • SD-WAN functional requirements relevant to ECE • A description of an ECE Virtual Prototype, including simulated wide area network paths and a DISN-representative implementation of MPLS, in Cisco Modeling Labs • Detailed network flow walkthroughs • Evaluation criteria based on ECE-relevant SD-WAN functional requirements Finally, an appendix provides an informal evaluation of Speedify—a commercial retail Virtual Private Network service—against the ECE SD-WAN evaluation criteria.

42 ENGINEERING↗
DOE OSTI2021

Cloud Droplet Measurement System for the ARM Tethered Balloon System (TBS) Field Campaign Report

The Mesa Photonics' cloud droplet measurement system (CDMS) performs in situ measurement of droplet size distribution and droplet number density in clouds. These characteristics are important cloud microphysical properties that are critical input parameters for atmospheric models and are also useful for proper calibration and validation of performance of other atmospheric measurement instrumentation. This small campaign was the first project (out of two) that involved integration of the CDMS into the U.S. Department of Energy (DOE) Atmospheric Radiation Measurement (ARM) user facility’s tethered balloon system (TBS) and its initial testing at the ARM Southern Great Plains (SGP) atmospheric observatory. The follow-up campaign (AFC07016) involved testing of the CDMS under relevant conditions at the third ARM Mobile Facility (AMF3) at Oliktok Point, Alaska and making in situ measurements in clouds. The goal of this small field campaign was to deploy the CDMS on the ARM TBS, demonstrate its integrity and compatibility with the TBS, and test the wireless telecommunication system in preparation for subsequent in-cloud measurements at ARM’s North Slope of Alaska (NSA) observatory at Utqiagvik (formerly Barrow). The specific technical objectives included: (1) Integration of the Mesa Photonics' CDMS into the ARM TBS, (2) testing of the wireless telecommunication system of the CDMS, (3) evaluating the data acquisition software and image processing algorithms especially under high-background-illumination conditions, and (4) testing the ruggedness of the instrument's optical alignment and other performance characteristics. All objectives have been successfully met. The mounting hardware was designed and built mostly at Sandia National Laboratories (SNL), which allowed reliable mounting of the CDMS on the TBS and co-locating the CDMS with other instruments. The field tests were performed by the principal investigator (PI) in collaboration with the TBS operational crew led by D. Dexheimer. The field testing demonstrated good compatibility of the CDMS with the TBS. During the TBS flights, the crew did not experience any operational issues with the CDMS. The instrument demonstrated reliable operational characteristics, including sufficient battery life and good thermal management. The wireless telecommunication system has been successfully tested at TBS flight altitudes of up to 1000 m. During all flights, the CDMS raw data were wirelessly transmitted to the ground station and processed in real time. The ruggedness of the instrument's optical alignment was evaluated by performing calibration of the CDMS (using Mesa Photonics' fixed-size monodisperse droplet generator) before and after the campaign. The calibration was stable within the instrument's measurement precision. In summary, the campaign demonstrated good compatibility of the Mesa Photonics' CDMS with the ARM TBS. The flight tests confirmed the mechanical integrity of the CDMS and stability of its optical layout, as well as reliability of the wireless telecommunication system. Successful completion of this campaign provided a solid basis for the next campaign (AFC07016, November 2020), that involved testing of the CDMS during in-cloud TBS flights at AMF3 at Oliktok Point.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2021

True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching

This work studies the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching. The dynamic BV measured in the hard switching circuits is over 1.4 kV, being 450 V higher than the static BV measured in the quasi-static I-V sweep. The device can survive at least 1 million hard-switching overvoltage pulses with 1.33 kV peak overvoltage (~95% dynamic BV). Recoverable device parametric shifts are observed after the 1-million pulses, featuring small reductions in threshold voltage and on-resistance. These shifts are different from the ones after the hard-switching pulses without overvoltage and are attributable to the trapping of the holes produced in impact ionization. Furthermore, these results suggest that the BV and overvoltage margin of GaN HEMTs in practical power switching can be significantly underestimated using the static BV. Index Terms— GaN, HEMT, power electronics, hard switching, breakdown voltage, overvoltage, ruggedness, reliability.

42 ENGINEERING↗
DOE OSTI2025

Non-traditional stable isotope measurements using laser desorption Orbitrap mass spectrometry: Implications for planetary missions.

Isotopic fractionation recorded in planetary materials provides insights into physical, chemical, and/or potential biological processes occurring on Solar System bodies. As we enter into the next decades of planetary exploration, the crucial information revealed by isotopic compositions of rocky and icy samples mandates that next generation spaceflight instrumentation possess the capability to measure isotope ratios in situ with sufficient precision/accuracy to distinguish between such processes. Here, in addition to identifying and fingerprinting complex organic materials with high accuracy and ultrahigh mass resolutions, laser desorption Orbitrap™ mass spectrometry (LD-O-MS) has the capability to determine the elemental and isotopic composition of solid planetary materials such as rock, regolith, organics, ice, etc. Here, we use a space-qualified LD-O-MS instrument comprising a 266 nm ultraviolet (UV) laser and Orbitrap mass analyzer ruggedized for planetary applications to investigate the stable isotopic composition of Ti and Zn metal plates. Based on the isotopic analyses, we constrain the performance of the CORALS instrument to sub per mille (‰) level accuracy and precision for Ti and at the per mille (‰) level for Zn. An LD-O-MS instrument is a versatile instrument capable of measuring isotopic composition of a variety of planetary samples and would constitute a critical instrument in the exploration of various planetary bodies including but not limited to Moon, Mars, Enceladus and other ocean or icy worlds, Ceres and other asteroids, and comets, thereby answering several high-priority questions pertaining to the formation and evolution of our Solar System.

58 GEOSCIENCES↗
DOE OSTI2024

A Deep Learning-Driven Sampling Technique to Explore the Phase Space of an RNA Stem-Loop

The folding and unfolding of RNA stem-loops are critical biological processes; however, their computational studies are often hampered by the ruggedness of their folding landscape, necessitating long simulation times at the atomistic scale. Here, we adapted DeepDriveMD (DDMD), an advanced deep learning-driven sampling technique originally developed for protein folding, to address the challenges of RNA stem-loop folding. Although tempering- and order parameter-based techniques are commonly used for similar rare-event problems, the computational costs or the need for a priori knowledge about the system often present a challenge in their effective use. DDMD overcomes these challenges by adaptively learning from an ensemble of running MD simulations using generic contact maps as the raw input. DeepDriveMD enables on-the-fly learning of a low-dimensional latent representation and guides the simulation toward the undersampled regions while optimizing the resources to explore the relevant parts of the phase space. We showed that DDMD estimates the free energy landscape of the RNA stem-loop reasonably well at room temperature. Our simulation framework runs at a constant temperature without external biasing potential, hence preserving the information on transition rates, with a computational cost much lower than that of the simulations performed with external biasing potentials. Here, we also introduced a reweighting strategy for obtaining unbiased free energy surfaces and presented a qualitative analysis of the latent space. This analysis showed that the latent space captures the relevant slow degrees of freedom for the RNA folding problem of interest. Finally, throughout the manuscript, we outlined how different parameters are selected and optimized to adapt DDMD for this system. We believe this compendium of decision-making processes will help new users adapt this technique for the rare-event sampling problems of their interest.

Gupta, Ayush↗