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Highly cascaded first-order sapphire optical fiber Bragg gratings fabricated by a femtosecond laser
This Letter reports an innovative technique for fabricating large-scale, highly cascaded first-order sapphire optical fiber Bragg gratings (FBGs) using a femtosecond laser-assisted point-by-point inscription method. For the first time, to the best of our knowledge, this study successfully demonstrates a distributed array of 10 FBGs within highly multimode sapphire crystal fiber, made possible by employing a high-power laser technique to generate larger reflectors with a Gaussian intensity profile. These first-order FBGs offer advantages such as enhanced reflectivity, shorter fabrication time, and simplified spectral characteristics, making them easier to interpret compared with high-order FBGs. The FBGs’ resilience and effectiveness are analyzed by subjecting them to temperature tests, proving their capacity for accurate temperature monitoring up to 1500°C—a testament to their suitability for harsh environments. This novel approach broadens the scope for sensing and communication applications in sapphire fibers, particularly under challenging conditions. The novelty of our work lies in successfully overcoming the limitations of previous designs by integrating a cascade of 10 FBGs in sapphire fibers, thereby enhancing multiplexing capabilities, minimizing overlapping of FBG peaks, and ensuring reliable temperature monitoring in industries and applications with thermal gradients.
Ti : sapphire laser synchronised with femtosecond Yb pump laser via nonlinear pulse coupling in Ti : sapphire active medium
A laser system utilising the method of synchronous pumping of a Ti : sapphire laser by a high-power femtosecond Yb{sup 3+}-doped laser is described. The pulse repetition rate of the Ti : sapphire laser is successfully locked to the repetition rate of the Yb laser for more than 6 hours without the use of any additional electronics. The measured timing jitter is shown to be less than 1 fs. A simple qualitative model addressing the synchronisation mechanism utilising the cross-phase modulation of oscillation and pump pulses within a Ti : sapphire active medium is proposed. Output parameters of the Ti : sapphire laser as functions of its cavity length are discussed in terms of this model. (paper)
On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures
A method for the production of high-quality radiation-resistant silicon-on-sapphire structures through the fabrication of a layer of nanopores in sapphire by helium ion implantation, i.e., by creating charge-carrier recombination centers, is proposed. In this case, the quality of the silicon layer is simultaneously improved. The problem of the thermal stability of the pores is discussed with the aim of analyzing the possibility of producing a microcircuit on the resultant modified silicon-on-sapphire sample. The layer of pores possesses a large total surface area and, hence, decreases the lifetime of charge carriers generated during irradiation of the operating microcircuit. This effect reduces the charge at the silicon-sapphire interface and improves radiation resistance.
Response to “Comment on ‘Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate’ ” [J. Appl. Phys. 112, 016101 (2012)]
Welander is correct about the misidentified crystal-directions in the top-view sapphire lattice (Fig. 4 [Zhao et al., J. Appl. Phys. 110, 033523 (2011)]). He is also correct about the misorientation of the pole figures in Fig. 4. In Fig. 1 of this response, we have corrected these errors. Perhaps because of these errors, Welander misconstrued our discussion of the Nbcrystal growth as claiming a new 3D registry. That was not our intention. Rather, we wished to highlight the role of energetic condensation that drives low-defect crystal growth by a combination of non-equilibrium sub-plantation that disturbs the substrate lattice and thermal annealing that annihilates defects and promotes large-grain crystal growth.
Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide
Bonding of an element comprising sapphire, ruby or blue sapphire to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide is discussed. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.
Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide
An element comprising sapphire, ruby or blue sapphire can be bonded to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.
Three-photon resonance ionization of atomic Mn in a hot-cavity laser ion source using Ti:sapphire lasers
Three-photon resonance ionization of atomic manganese (Mn) in a hot-cavity ion source using Ti:sapphire lasers has been demonstrated. Three-step ionization schemes employing different intermediate levels and Rydberg or autoionizing (AI) states in the final ionization step are established. Strong AI resonances were observed via the 3d 5 4s5s f 6 S 5/2 level at 49 415.35 cm -1 , while Rydberg transitions were reached from the 3d 5 4s4d e 6 D 9/2,7/2,5/2 levels at around 47 210 cm -1 . Analyses of the strong Rydberg transitions associated with the 3d 5 4s4d e 6 D 7/2 lower level indicate that they belong to the dipole-allowed 4d→nf 6 F° 9/2,7/2,5/2 series converging to the 3d 5 4s 7 S 3 ground state of Mn II. From this series, an ionization potential of 59 959.56 ± 0.01 cm -1 is obtained for Mn. At high ion source temperatures the semi-forbidden 4d→nf 8 F° 9/2,7/2,5/2 series was also observed. The overall ionization efficiency for Mn has been measured to be about 0.9% when using the strong AI transition in the third excitation step and 0.3% when employing an intense Rydberg transition. Ultimately, our experimental data indicate that the ionization efficiency was limited by the interaction of Mn atoms with ion source materials at high temperatures.
Plasma-Assisted Epitaxy of Piezoelectric Sc x Al 1-x N Films on Sapphire for Use in Harsh-Environment Microwave Acoustic Sensors
The Sc x Al 1-x N wurtzite structure has been shown theoretically and experimentally to exhibit significantly higher piezoelectric coupling compared to pure AlN. In this work, a plasma-assisted epitaxial growth method has been used to synthesize epitaxial (0002) Sc x Al 1-x N films on c-sapphire substrates from x = 0.07 to 0.30 by co-evaporating high-purity Sc and Al sources in the presence of a nitrogen plasma generated by an RF plasma source. Epitaxial Sc x Al 1-x N films with highly oriented (0002) grains and in-plane registry were produced on c-sapphire substrates that were pre-exposed to the nitrogen plasma to form an oxynitride seed layer. Growth of Sc x Al 1-x N films was carried out at 930°C under both metal-rich and N-rich conditions using precisely controlled Sc, Al, and N-plasma fluxes. Metal-rich depositions yielded non-(0002)-oriented Sc x Al 1-x N grains and intermetallic ScAl grains. Nitrogen-rich growth with a Sc/Al flux ratio of 1/3 produced the best (0002) epitaxy as determined by x-ray diffraction analysis. Surface acoustic wave resonator (SAWR) devices were fabricated from 500-nm-thick Sc x Al 1-x N and AlN films to extract their electromechanical coupling coefficients, k 2 . As the Sc concentration in the films increases, the degree of (0002) epitaxy is reduced, yet the value of k 2 increases becasue there is more Sc in the wurzite lattice despite the decreased level of (0002) grain alignment. As a result, the use of a 10-nm-thick Si x N y capping layer on top of the Sc x Al 1-x N films aids in preventing etching during SAWR device photolithography and also helps hinder film oxidation up to 800°C.
The surface chemistry of sapphire-c: A literature review and a study on various factors influencing its IEP
Abstract not provided
Eutectic bonding of sapphire to sapphire
Eutectic mixture of aluminum oxide and zirconium oxide provides new bonding technique for sapphires and rubies. Technique effectively reduces possibility of contamination. Bonding material is aluminum oxide and zirconium oxide mixture that matches coefficient of thermal expansion of sapphire.
Controlling the structure and ferroic properties of strained epitaxial NiTiO3 thin films on sapphire by post-deposition annealing
Ferroelectrically induced weak ferromagnetism had been predicted earlier in compounds MTiO3 (M = Fe, Mn, Ni) with the LiNbO3-type structure. In order to stabilize this metastable structure by oxide heteroepitaxy, we attempted to grow epitaxial NiTiO3 films on the nonpolar, non-magnetic substrate Al2O3 by pulsed laser deposition. Given the structural imperfections of the as-deposited films arising from the large lattice mismatch, which resulted in weak ferroic ordering, we investigated the effect of post-synthesis annealing on the films’ properties. Our structural data from x-ray diffraction and electron microscopy suggest that the crystalline quality of the NiTiO3 films was greatly improved by annealing the films at 600-1000 oC for 8 hours, with new phase formation along the interface at 1000 oC. Our physical property characterization indicates increased ferromagnetism and polarization after 600 oC, but a change in the magnetic state to likely ferrimagnetism, and a loss of polarization after the 1000 oC treatment. Our results suggest that the ferroic domain properties of the NiTiO3 films can be favorably altered by post-synthesis heat treatment at the proper temperature to manipulate interfacial strain and enhance the multiferroic properties. Improvement in the ferroic properties can be explained by a combination of crystallite growth, interfacial strain relief, and thermodynamic phase stability arguments. At the same time, exceeding temperatures may drive the system to a thermodynamically more favored crystalline order, and eventually to phase segregation and decomposition.
Sapphire evolution of the vicinal (0001) sapphire surface upon annealing in air
The evolution of a terrace-step nanostructure (TSN) on the sapphire (0001) surface misoriented by an angle of 0.1° with respect to the (101̄0) plane was observed by atomic force microscopy (AFM) at temperatures from 1273 to 1673 K. It was established that, with an increase in the annealing temperature to 1373 K, the step height attains 0.44 nm at a distance of 220 nm between steps; i.e., heating by 100 K doubles these parameters. In this case, the relief periodicity is retained. Rapid cooling of the substrate to 973 K leads to partial freezing of the surface structure, which makes it possible to observe the transition from one TSN to another. It was established that two steps coalescence upon annealing to 1373 K toward the (101̄0) plane, which has the lowest rigidity and, consequently, the lowest atomic density. The coalescence of two steps at a specified temperature is completed at a sufficiently large distance between the steps, at which their interaction energy is negligible. Upon further annealing of the samples above 1373 K, the steps overgrow to 1 nm; however, their periodicity is broken in this case.
Effect of Charging Electron Exposure on 1064nm Transmission through Bare Sapphire Optics and SiO2 over HfO2 AR-coated Sapphire Optics
Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.
Effect of Charging Electron Exposure on 1064nm Transmission Through Bare Sapphire Optics and SiO2 over HfO2 AR-Coated Sapphire Optics
Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.
Epitaxial growth and improved electronic properties of (Bi 1-x Sb x ) 2 Te 3 thin films grown on sapphire (0001) substrates: The influence of Sb content and the annealing
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Hydrogen bonding and molecular orientations across thin water films on sapphire
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