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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact

Carrier selective passivated contacts composed of thin oxide, n + polycrystalline Si and metal on top of a n-Si absorber can significantly lower the recombination current density (J orear ≤8 fA/cm 2 ) under the contact while providing excellent specific contact resistance (5–10 mΩ-cm 2 ); 25.1% efficient small area cells with photolithography front contacts on boron doped selective emitter and Fz wafers have been achieved by Fraunhofer ISE using their tunnel oxide passivated contact (TOPCon) approach. This paper shows a methodology to model such passivated contact cells using Sentaurus device model, which involves replacing the TOPCon region by carrier selective electron and hole recombination velocities to match the measured J orear of the TOPCon region as well as all the light IV values of the cell. We first validated the methodology by modeling a 24.9% reference cell. The model was then extended to assess the efficiency potential of large area TOPCon cells on commercial grade n-type Cz material with screen-printed front contacts. To use realistic input parameters, a 21% n-type PERT cell was fabricated on Cz wafer (5 Ω-cm, 1.5-ms lifetime). Modeling showed that the cell efficiency will improve to only 21.6% if the back of this cell is replaced by the above TOPCon, and the performance is limited by the homogenous emitter. Efficiency was then modeled to improve to 22.6% with the implementation of selective emitter (150/20 Ω/sq). Lastly, it is shown that screen printing of 40-µm-wide lines and improved bulk material (10 Ω-cm, 3-ms lifetime) can raise the single side TOPCon Cz cell efficiency to 23.2%.

14 SOLAR ENERGY↗
DOE OSTI2016

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

Screen printing allows for direct conversion of thermoelectric nanocrystals into flexible energy harvesters and coolers. However, obtaining flexible thermoelectric materials with high figure of merit ZT through printing is an exacting challenge due to the difficulties to synthesize high-performance thermoelectric inks and the poor density and electrical conductivity of the printed films. Here, we demonstrate high-performance flexible films and devices by screen printing bismuth telluride based nanocrystal inks synthesized using a microwave-stimulated wet-chemical method. Thermoelectric films of several tens of microns thickness were screen printed onto a flexible polyimide substrate followed by cold compaction and sintering. The n-type films demonstrate a peak ZT of 0.43 along with superior flexibility, which is among the highest reported ZT values in flexible thermoelectric materials. A flexible thermoelectric device fabricated using the printed films produces a high power density of 4.1 mW/cm 2 with 60°C temperature difference between the hot side and cold side. In conclusion, the highly scalable and low cost process to fabricate flexible thermoelectric materials and devices demonstrated here opens up many opportunities to transform thermoelectric energy harvesting and cooling applications.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Low-Cost, Screen-Printed Silver Metal Complex Inks for Silicon Heterojunction Solar Cells

Screen printing using metal particle pastes, the current photovoltaic industry metallization standard, provides fast and reliable metal grids for silicon solar cells. Recently, metal complex or reactive metal inks are attracting research interest due to their significantly low cost and higher performance compared to traditional nanoparticle silver pastes. In this work, we demonstrate, for the first time, screen-printed high-efficiency silicon heterojunction solar cells metallized by silver metal complex inks on industrial G1-size (158.75 x 158.75 mm2) wafers. We demonstrate screen-printed Ag metal complex ink grid patterns with continuous fingers ~100-120 ..mu..m wide. The printed Ag grid is very thin (~1 ..mu..m), which is an order of magnitude thinner than the current ~20-30 ..mu..m fingers printed with low-temperature nanoparticle-based pastes. Double printing allows silicon heterojunction devices with efficiencies >20%. This is the highest efficiency so far, to our knowledge, of industrial solar cell precursors using this metallization technology. Simulation results suggested that increasing the thickness of the metal film does not significantly improve efficiency due to the dense, highly conductive films. So, a single print of ~1 ..mu..m finger would be enough to produce cells that perform similarly to a ~20 ..mu..m thick nanoparticle paste printed cells. Additionally, solar cells printed on G1 wafers with silver metal complex ink required more than 10 times less silver (~0.03 g) compared to those using silver/copper nanoparticle paste (~0.4 g of Ag). These results indicate that metal complex inks are a very promising replacement for silver nanoparticle pastes for industrial-scale metallization in an age of resource scarcity and high costs of noble metals.

14 SOLAR ENERGY↗
DOE OSTI2016

A Water-Based Silver-Nanowire Screen-Print Ink for the Fabrication of Stretchable Conductors and Wearable Thin-Film Transistors

Silver nanowire is a very promising material for fabricating compliant conductors which are essential for stretchable/wearable electronic devices. Screen printing is a cost-effective and scalable technology to fabricate large-area thin film coatings with modest pattern resolution. The biggest challenge to prepare a screen printable silver nanowire ink stems from the low viscosity of silver nanowire dispersions and that the addition of a thickening agent could dramatically increase the inter-nanowire contact resistance in the resulting coating. Herein, we report the synthesis of a water-based silver nanowire ink, which was formulated with low solid contents, high viscosity at 0.1 s -1 shear rate, and appropriate rheological behavior suitable for screen printing. Silver nanowire coating patterns were screen printed with uniform sharp edges, ~50 μm resolution, and electrical conductivity as high as 4.67 × 10 4 S cm -1 . The screen printed silver nanowires were then used to fabricate a composite conductor that retained a conductivity greater than 10,000 S cm -1 under 70% tensile strain. Fully printed and stretchable/wearable thin-film transistor arrays were also fabricated by employing the screen printed composite conductor as the source, drain, and gate, drop cast semiconducting carbon nanotubes as the channel, and a dielectric elastomer. The 10 × 6 thin-film transistor arrays had a fabrication yield of 91.7%, average mobility of 33.8 ± 3.7 cm 2 V -1 s -1 , ON/OFF ratio ~1000, and remained stable during 1,000 cycles of wearing on and peeling off a glass tube with 5 mm diameter.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2015

Screen printed silver top electrode for efficient inverted organic solar cells

Highlights: • Screen printing of silver pattern. • X-ray diffraction pattern confirmed the face centered cubic structure of silver. • Uniform surface morphology of silver pattern with sheet resistance of 0.06 Ω/sq. • The power conversion efficiency of fabricated solar cell is found to be 2.58%. - Abstract: The present work is mainly focused on replacement of the vacuum process for top electrode fabrication in organic solar cells. Silver top electrode deposited through solution based screen printing on pre-deposited polymeric thin film. The solution based printing technology provides uniform top electrode without damaging the underlying organic layers. The surface crystallinity and surface morphology of silver top electrode are examined through X-ray diffraction, field-emission scanning electron microscope and atomic force microscope. The purity of silver is examined through X-ray energy dispersive spectroscopy. The top electrode exhibits face centered cubic structure with homogeneous morphology. The sheet resistance of top electrode is found to be 0.06 Ω/sq and an average pattern thickness of ∼15 μm. The power conversion efficiency is 2.58%. Our work demonstrates that the solution based screen printing is a significant role in the replacement of vacuum process for the fabrication of top electrode in organic solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Multiplexed Anodic Stripping Voltammetry Detection of Heavy Metals in Water Using Nanocomposites Modified Screen-Printed Electrodes Integrated With a 3D-Printed Flow Cell

In this study, we present multiplexed anodic stripping voltammetry (ASV) detection of heavy metal ions (HMIs)—As(III), Cd(II), and Pb(II)—using a homemade electrochemical cell consisting of dual working, reference and counter screen-printed electrodes (SPE) on polyimide substrate integrated with a 3D-printed flow cell. Working and counter electrodes were fabricated by the screen-printing of graphite paste while the Ag/AgCl paste was screen-printed as a reference electrode (Ag/AgCl quasi-reference electrode). The working electrodes were modified with (BiO) 2 CO 3 -reduced graphene oxide (rGO)-Nafion [(BiO) 2 CO 3 -rGO-Nafion] and Fe 3 O 4 magnetic nanoparticles (Fe 3 O 4 MNPs) decorated Au nanoparticles (AuNPs)-ionic liquid (IL) (Fe 3 O 4 -Au-IL) nanocomposites separately to enhance HMIs sensing. Electrochemical detection was achieved using square wave ASV technique. The desired structure of the flow electrochemical cell was optimized by the computational fluid dynamic (CFD). Different experimental parameters for stripping analysis of HMIs were optimized including deposition time, deposition potential and flow rate. The linear range of calibration curves with the sensing nanocomposites modified SPE for the three metal ions was from 0–50 μg/L. The limits of detection (S/N = 3) were estimated to be 2.4 μg/L for As(III), 1.2 μg/L for Pb(II) and 0.8 μg/L for Cd(II). Furthermore, the homemade flow anodic stripping sensor platform was used to detect HMIs in simulated river water with a 95–101% recovery, indicating high selectivity and accuracy and great potential for applicability even in complex matrices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

High Seebeck Coefficient from Screen-Printed Colloidal PbSe Nanocrystals Thin Film

Thin-film thermoelectrics (TEs) with a thickness of a few microns present an attractive opportunity to power the internet of things (IoT). Here, we propose screen printing as an industry-relevant technology to fabricate TE thin films from colloidal PbSe quantum dots (QDs). Monodisperse 13 nm-sized PbSe QDs with spherical morphology were synthesized through a straightforward heating-up method. The cubic-phase PbSe QDs with homogeneous chemical composition allowed the formulation of a novel ink to fabricate 2 μm-thick thin films through robust screen printing followed by rapid annealing. A maximum Seebeck coefficient of 561 μV K -1 was obtained at 143 °C and the highest electrical conductivity of 123 S m -1 was reached at 197 °C. Power factor calculations resulted in a maximum value of 2.47 × 10 -5 W m -1 K -2 at 143 °C. To the best of our knowledge, the observed Seebeck coefficient value is the highest reported for TE thin films fabricated by screen printing. Thus, this study highlights that increased Seebeck coefficients can be obtained by using QD building blocks owing to quantum confinement.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Investigating the effect of screen-printed structured graphite electrodes with low tortuosity for high-capacity and fast-charging lithium-ion batteries

A flexible screen-printed graphite electrode was fabricated as an anode for developing fast-charging lithium-ion batteries with low tortuosity. A homogenous anode ink was prepared by mixing graphite as the active material, carbon black (C45) as the conductive additive, and polyvinylidene fluoride (PVDF) as the binder in N-Methyl-2-pyrrolidone (NMP) solvent. The ink was deposited on a flexible copper foil via a stainless-steel screen consisting of an array of pores, that act as secondary pore networks (SPNs), using the screen-printing process. Lithium-ion battery half-cells were assembled using the printed graphite anode, lithium metal foil as the counter electrode, and 1.2 M lithium hexafluorophosphate (LiPF 6 ) in ethyl carbonate: ethyl methyl carbonate (EC: EMC = 3:7) as the electrolyte. The effect of SPNs on the cell performance was investigated by performing formation, rate and cycling tests on the assembled cells, at different C-rates. It was observed that the cells consisting of SPNs with a pore size of 100 μm and edge-to-edge distance of 100 μm between the pores exhibited significantly higher specific capacities of 168 and 129 mAh/g when compared to reference cells without SPNs, which had capacities of 120 and 85 mAh/g, at high C-rates of 4 C and 6 C, respectively. The cells with SPNs also demonstrated excellent cycling performance with ~ 95% capacity retention after 100 cycles at 2 C.

Fast charging lithium-ion battery↗
DOE OSTI2018

Screen printing large-area organometal halide perovskite thin films for efficient photodetectors

Highlights: • A stable paste with perovskite precursor was produced out. • Screen printing was proposed to fabricate perovskite thin films. • The perovskite photodetectors with symmetric architectures show reasonable performance with high photocurrent and fast response. - Abstract: Organometal halide perovskites have demonstrated excellent features compared to conventional optoelectronic materials. To date, the perovskite films have generally been fabricated by either spin coating or vapor deposition. However, both methods cannot simultaneously meet large scale and low cost of production. Here, a simple, low-cost and high-throughput strategy was proposed to fabricate perovskite thin films, which were further applied in photodetectors. First, lead compound nanoparticles were synthesized by a solvent precipitation method, then a paste with the lead compound nanoparticles was screen printed to form PbO films involving calcination, and next the PbO films directly reacted with CH{sub 3}NH{sub 3}I solution to convert into CH{sub 3}NH{sub 3}PbI{sub 3} films. The CH{sub 3}NH{sub 3}PbI{sub 3} films consisted of micron crystals, whose sizes can be effectively controlled by adjusting CH{sub 3}NH{sub 3}I concentration. Furthermore, the CH{sub 3}NH{sub 3}PbI{sub 3} films were applied in photodetectors, which showed good performance with high sensitivity and fast response.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1989

Screen-Printed YBa2Cu3O7-x Films On Alumina

Superconducting films made in relatively simple process. Thick films of YBa2Cu3O7-x superconductor deposited on highly-polished alumina substrates by screen printing. In addition to simplicity, screen-printing technique offers advantage that patterns for electronic and microwave circuits and devices printed directly, without additional etching steps.

Bansal, Narottam P.↗
NASA NTRS1992

Screen printed Y and Bi-based superconductors

High T(sub c) superconducting thick film was prepared by screen printing process. Y-based (YBa2Cu3O(7 - x)) superconducting thick films were printed on 211/Al2O3, SNT/Al2O3, and YSZ substrates. Because of poor adhesion of the superconducting thick films to 211/Al2O3 and SNT/Al2O3 substrates, relatively low T(sub c) and J(sub c) values were obtained from the films printed on these substrates. Critical temperatures of YBa2Cu3O(7 - x) thick films deposited on 211/Al2O3 and SNT/Al2O3 substrates were about 80 K. The critical current densities of these films were less than 2 A/cm(exp 2). Higher T(sub c) and J(sub c) films were printed on the YSZ substrates; T(sub c) = 86.4 K and J(sub c) = 50.4 A/cm(exp 2). Multiple lead samples were also prepared on the YSZ substrates. These showed lower T(sub c) and J(sub c) values than plain samples. The heat treatment conditions of the multiple lead samples are still under investigation. Bi-based superconductor thick films have been obtained so far. Improving the superconducting properties of the BSCCO screen printed thick films will be emphasized in future work.

Haertling, Gene H.↗
DOE OSTI2020

Design, Optimization, and In-Depth Understanding of Front and Rear Junction Screen-Printed Double-Side Passivated Contacts Solar Cells

In this work, detailed numerical modeling is performed for front junction (FJ) and rear junction (RJ) n-type Si solar cells with screen-printed double-side poly-Si based tunnel oxide passivated contacts (TOPCon). Fundamental understanding of both structures is crucial to explore factors that limit the efficiency potential of the two designs. By investigating several key parameters such as front poly sheet resistance and thickness, bulk material properties, and carrier transport in our simulation model, we determine and explain why RJ cells outperform FJ cells. Our findings reveal that FJ suffers from present technological limitations of p-poly based passivated contacts, namely, i) large recombination observed in textured p-TOPCon emitter and ii) low solid solubility and hole mobility in boron-doped poly-Si resulting in very high sheet resistance of front p-poly layers which must be made thin to reduce absorption losses. In contrast, RJ desensitized the cell efficiency to front sheet resistance allowing application of ultra-thin front n-poly layers and is therefore ideally suited for double-side TOPCon cells. Lastly, we have developed a roadmap for efficiency projections of commercial-type screen-printed RJ and FJ topologies reaching ~24% and >22.5% efficiencies respectively, quantifying and explaining the impact of technological innovations on the performance of each design.

14 SOLAR ENERGY↗
NASA NTRS1977

Automated fabrication of back surface field silicon solar cells with screen printed wraparound contacts

The development of a process for fabricating 2 x 4 cm back surface field silicon solar cells having screen printed wraparound contacts is described. This process was specifically designed to be amenable for incorporation into the automated nonvacuum production line. Techniques were developed to permit the use of screen printing for producing improved back surface field structures, wraparound dielectric layers, and wraparound contacts. The optimized process sequence was then used to produce 1852 finished cells. Tests indicated an average conversion efficiency of 11% at AMO and 28 C, with an average degradation of maximum power output of 1.5% after boiling water immersion or thermal shock cycling. Contact adherence was satisfactory after these tests, as well as long term storage at high temperature and high humidity.

Thornhill, J. W.↗
DOE OSTI2017

High-efficiency selective boron emitter formed by wet chemical etch-back for n -type screen-printed Si solar cells

Front metal contact induced recombination and resistance are major efficiency limiting factors of large-area screen-printed n-type front junction Si solar cells with homogeneous emitter and tunnel oxide passivated back contact (TOPCON). Here, this paper shows the development of a selective boron emitter (p + /p ++ ) formed by a screen-printed resist masking and wet chemical etch-back process, which first grows a porous Si layer and subsequently removes it. Various wet-chemical solutions for forming porous Si layer are investigated. An industrial compatible process with sodium nitrite (NaNO 2 ) catalyst is developed to uniformly etch-back the ~47 Ω/ atmospheric pressure chemical vapor deposited heavily doped boron emitter to ~135 Ω/ by growing a 320 nm porous Si layer within 3 min and subsequently removing it. After etching back, the boron emitter was subjected to a thermal oxidation to lower the surface concentration and the emitter saturation current density J 0e . Various etched-back emitters were evaluated by measuring J 0e on symmetric test structures with atomic layer deposited aluminum oxide (Al 2 O 3 ) passivation. Very low J 0e of 21, 14, and 9 fA/cm 2 were obtained for the 120, 150, and 180 Ω/ etched-back emitters, respectively. A solar cell with a selective emitter (65/180 Ω/ ) formed by this etch-back technology and with an Al/Ag contact on the front and TOPCON on the back gave an open-circuit voltage (V oc ) of 682.8 mV and efficiency of 21.04% on n-type Czochralski Si wafer. Finally, this demonstrates the potential of this technology for next generation high-efficiency industrial n-type Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2016

Effect of sintering temperatures and screen printing types on TiO{sub 2} layers in DSSC applications

Dye-Sensitized Solar Cell (DSSC) is a candidate solar cell, which has a big potential in the future due to its eco-friendly material. This research is conducted to study the effect of sintering temperature and the type of screen-printing toward the characteristics of TiO{sub 2} layer as a working electrode in DSSC. TiO{sub 2} layers were fabricated using a screen-printing method with a mesh size of T-49, T-55, and T-61. TiO{sub 2} layers were sintered at temperatures of 600°C and 650°C for 60 min. DSSC structure was composed of TiO{sub 2} as semiconductors, ruthenium complex as dyes, and carbon as counter electrodes. The morphology of TiO{sub 2} layer was observed by using Nikon E2 Digital Camera Microscopy. The efficiencies of DSSC were calculated from the I-V curves. The highest efficiency is 0.015% at TiO{sub 2} layer fabricated with screen type T-61 and at a sintering temperature of 650°C.

14 SOLAR ENERGY↗
NASA NTRS1980

Screen printing technology applied to silicon solar cell fabrication

The process for producing space qualified solar cells in both the conventional and wraparound configuration using screen printing techniques was investigated. Process modifications were chosen that could be easily automated or mechanized. Work was accomplished to optimize the tradeoffs associated with gridline spacing, gridline definition and junction depth. An extensive search for possible front contact metallization was completed. The back surface field structures along with the screen printed back contacts were optimized to produce open circuit voltages of at least an average of 600 millivolts. After all intended modifications on the process sequence were accomplished, the cells were exhaustively tested. Electrical tests at AMO and 28 C were made before and after boiling water immersion, thermal shock, and storage under conditions of high temperature and high humidity.

Thornhill, J. W.↗