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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Sr(Ag 1− x Li x ) 2 Se 2 and [Sr 3 Se 2 ][(Ag 1− x Li x ) 2 Se 2 ] Tunable Direct Band Gap Semiconductors

Abstract Synthesizing solids in molten fluxes enables the rapid diffusion of soluble species at temperatures lower than in solid‐state reactions, leading to crystal formation of kinetically stable compounds. In this study, we demonstrate the effectiveness of mixed hydroxide and halide fluxes in synthesizing complex Sr/Ag/Se in mixed LiOH/LiCl. We have accessed a series of two‐dimensional Sr(Ag 1− x Li x ) 2 Se 2 layered phases. With increased LiOH/LiCl ratio or reaction temperature, Li partially substituted Ag to form solid solutions of Sr(Ag 1− x Li x ) 2 Se 2 with x up to 0.45. In addition, a new type of intergrowth compound [Sr 3 Se 2 ][(Ag 1− x Li x ) 2 Se 2 ] was synthesized upon further reaction of Sr(Ag 1− x Li x ) 2 Se 2 with SrSe. Both Sr(Ag 1− x Li x ) 2 Se 2 and [Sr 3 Se 2 ][(Ag 1− x Li x ) 2 Se 2 ] exhibit a direct band gap, which increases with increasing Li substitution ( x ). Therefore, the band gap of Sr(Ag 1− x Li x ) 2 Se 2 can be precisely tuned via fine‐tuning x that is controlled by only the flux ratio and temperature.

Zhou, Xiuquan↗
DOE OSTI2023

Sr(Ag 1-x Li x ) 2 Se 2 and [Sr 3 Se 2 ][(Ag 1-x Li x ) 2 Se 2 ] Tunable Direct Band Gap Semiconductors

Synthesizing solids in molten fluxes enables the rapid diffusion of soluble species at temperatures lower than in solid-state reactions, leading to crystal formation of kinetically stable compounds. Here, in this study, we demonstrate the effectiveness of mixed hydroxide and halide fluxes in synthesizing complex Sr/Ag/Se in mixed LiOH/LiCl. We have accessed a series of two-dimensional Sr(Ag 1-x Li x ) 2 Se 2 layered phases. With increased LiOH/LiCl ratio or reaction temperature, Li partially substituted Ag to form solid solutions of Sr(Ag 1-x Li x ) 2 Se 2 with x up to 0.45. In addition, a new type of intergrowth compound [Sr 3 Se 2 ][(Ag 1-x Li x ) 2 Se 2 ] was synthesized upon further reaction of Sr(Ag 1-x Li x ) 2 Se 2 with SrSe. Both Sr(Ag 1-x Li x ) 2 Se 2 and [Sr 3 Se 2 ][(Ag 1-x Li x ) 2 Se 2 ] exhibit a direct band gap, which increases with increasing Li substitution (x). Therefore, the band gap of Sr(Ag 1-x Li x ) 2 Se 2 can be precisely tuned via fine-tuning x that is controlled by only the flux ratio and temperature.

2D materials↗
DOE OSTI2025

Hydrazine-free precursor for solution-processed all-inorganic Se and Se 1− x Te x photovoltaics

Selenium (Se) has reemerged as a promising absorber material for indoor and tandem photovoltaics (PVs), and its alloys with Te (Se 1−x Te x ) offer a widely tunable bandgap. Solution processing of this materials system offers a route to low-cost fabrication. However, solution processing of Se has, thus far, only used hydrazine, which is an extremely hazardous solvent. In this work, we prepare and isolate propylammonium poly-Se and poly-Se–Te precursors from a safer thiol-amine solvent system. We formulate molecular inks by dissolving the precursor in dimethylformamide (DMF) with a monoethanolamine (EA) additive and process high-quality Se and Se 1−x Te x films with bandgaps ranging from 1.20 eV to 1.86 eV. We fabricate PVs from these films using TiO 2 and MoO 3 charge transport layers (CTLs) to achieve power conversion efficiencies as high as 2.73% for Se and 2.33% for Se 0.7 Te 0.3 under solar simulation. Se devices show excellent stability with no degradation after 1 month in air, enabled by the excellent stability of Se and the use of inorganic CTLs. This work represents an important step towards low-cost solution-phase processing of Se and Se 1−x Te x alloys for PVs and photodetectors with low toxicity and high bandgap tunability.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Flux-Assisted Boron Chalcogen Mixture (BCM) Method for Synthesizing Mixed Chalcogenide Semiconductors (AkRE 2 Si 2 Se x S 8– x and CaRE 2 Si 2 Se 8 ) ( Ak = Ca and Sr; RE = La, Ce, Pr, Nd, and Sm): Investigation of Their Magnetic and Optical Properties

We report a detailed structural analysis of a series of ten quaternary rare-earth-containing seleno-thiosilicates AkRE 2 Si 2 Se x S 8-x and selenosilicates, CaRE 2 Si 2 Se 8 (Ak = Ca and Sr; RE = La, Ce, Pr, Nd, and Sm). Single crystals were obtained by using the flux-assisted boron chalcogen mixture (BCM) method and single crystal X-ray diffraction was used to determine their structures. All members of the AkRE 2 Si 2 Se x S 8-x and CaRE 2 Si 2 Se 8 series crystallize in the space group R$\bar{3}$c (space group number 167) of the trigonal crystal system. The single-crystal X-ray diffraction analysis revealed a strong preference for Se/S atoms to occupy one vs. the other of the two available sites. Polycrystalline samples were used for magnetic susceptibility and UV–visible diffuse reflectance measurements. Magnetic measurements show that CaCe₂Si₂Se₁.₇₃S₆.₂₇ and CaNd₂Si₂Se₂.₅S₅.₅ are paramagnetic with negative Weiss constants (θ = –60.1 and –26.2). Diffuse reflectance analysis gives optical band gaps of 2.7(1) eV (CaLa₂Si₂Se₂.₃₈S₅.₆₂), 2.2(1) eV (CaCe₂Si₂Se₁.₇₃S₆.₂₇), 2.5(1) eV (CaNd₂Si₂Se₂.₅S₅.₅), and 2.0(1) eV (CaCe₂Si₂Se₈), consistent with density functional theory calculations. By partially or fully replacing S sites with Se it was possible to achieve band gap tuning. Photoluminescence behavior was also investigated for CaCe 2 Si 2 Se 1.73 S 6.27 via irradiation with 375 nm ultraviolet light.

BCM method↗
DOE OSTI2022

Carrier Mobility Modulation in Cu 2 Se Composites Using Coherent Cu 4 TiSe 4 Inclusions Leads to Enhanced Thermoelectric Performance

Carrier transport engineering in bulk semiconductors using inclusion phases often results in the deterioration of carrier mobility (μ) owing to enhanced carrier scattering at phase boundaries. Here, we show by leveraging the temperature-induced structural transition between the α-Cu 2 Se and β-Cu 2 Se polymorphs that the incorporation of Cu 4 TiSe 4 inclusions within the Cu 2 Se matrix results in a gradual large drop in the carrier mobility at temperatures below 400 K (α-Cu 2 Se), whereas the carrier mobility remains unchanged at higher temperatures, where the β-Cu 2 Se polymorph dominates. The sharp discrepancy in the electronic transport within the α-Cu 2 Se and β-Cu 2 Se matrices is associated with the formation of incoherent α-Cu 2 Se/Cu 4 TiSe 4 interfaces, owing to the difference in their atomic structures and lattice parameters, which results in enhanced carrier scattering. In contrast, the similarity of the Se sublattices between β-Cu 2 Se and Cu 4 TiSe 4 gives rise to coherent phase boundaries and good band alignment, which promote carrier transport across the interfaces. Interestingly, the different cation arrangements in Cu 4 TiSe 4 and β-Cu 2 Se contribute to enhanced phonon scattering at the interfaces, which leads to a reduction in the lattice thermal conductivity. The large reduction in the total thermal conductivity while preserving the high power factor of β-Cu 2 Se in the (1–x)Cu 2 Se/(x)Cu 4 TiSe 4 composites results in an improved ZT of 1.2 at 850 K, with an average ZT of 0.84 (500–850 K) for the composite with x = 0.01. Furthermore, this work highlights the importance of structural similarity between the matrix and inclusions when designing thermoelectric materials with improved energy conversion efficiency.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Surface Conversion of Single-Crystal Bi 2 Se 3 to β-In 2 Se 3

In this work, we demonstrate that the surface layers of single-crystal layered-2D Bi 2 Se 3 can be converted to layered-2D rhombohedral ß-In 2 Se 3 by annealing under a trimethylindium (TMIn) flux. Samples were prepared in a metalorganic chemical vapor deposition (MOCVD) chamber, then transferred under vacuum to a surface analysis chamber for analysis with low-energy electron diffraction (LEED) and Auger electron spectroscopy. Additional ex situ characterization included x-ray diffraction, transmission-electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS) elemental mapping, and Raman spectroscopy. The resulting single-crystal ß-In 2 Se 3 adopts the rhombohedral crystal structure (space group R-3m) and orientation of the underlying Bi 2 Se 3 , and the excess Bi atoms generated by this process create an underlying region of Bi-rich Bi x Se y . Due to the difference in bandgap between Bi 2 Se 3 and In 2 Se 3 , this conversion reaction presents a pathway to lateral heterojunctions if only selected regions are converted by masking the surface to spatially define the TMIn exposure. The conversion may also have implications for heteroepitaxy, because the in-plane lattice constants of Bi 2 Se 3 and In 2 Se 3 (0001) surfaces match those of InP and GaAs (111), respectively, and the natural cleavage planes of a layered-2D crystal facilitate substrate removal and reuse.

14 SOLAR ENERGY↗
DOE OSTI2024

A Recipe for a Great Meal: A Benchtop Route from Elemental Se to Superior Thermoelectric β-Ag 2 Se

The low-temperature modification of β-Ag 2 Se has proven to be useful as a near-room-temperature thermoelectric material. Over the past years, research has been devoted to interstitial, vacancy, and substitutional doping into the parent β-Ag 2 Se structure, aiming at tuning the material’s charge and heat transport properties to enhance thermoelectric performance. The transformation of β-Ag 2 Se into α-Ag 2 Se at ~134 °C and the low solubility of dopants are the main obstacles for the doping approach. Herein, we report a facile, safe, scalable, and cost-effective benchtop approach to successfully produce metal-doped β-Ag 2 Se. The doped materials display a remarkable enhancement of thermoelectric performance with a record-high peak zT of 1.30 at 120 °C and an average zT of ~1.15 in the 25–120 °C range for 0.2 at. % Zn-doped Ag 2 Se. The enhancement in zT is attributed to point defects created by Zn doping into Ag vacancies/interstitials, which enhances the scattering of phonons and tunes the charge carrier properties, leading to the significant suppression of thermal conductivity. In conclusion, the simplicity of the synthetic method developed herein and the high performance of the final products provide an avenue to produce high-quality Ag 2 Se-based thermoelectric materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Oxygen Management to Avoid Photo-Inactive Cd(S,Se) for Efficient Cd(Se,Te) Solar Cells

Our previous work has demonstrated that the formation of a penternary cadmium chalcogenide Cd(O,S,Se,Te) region can significantly reduce the front interface recombination in Cd(Se,Te)-based thin-film solar cells. In this work, we have shown that oxygen management during the device fabrication is crucial to form this region. While both the CdS and CdSe layer depositions and the postdeposition CdCl2 treatment should be conducted in the presence of oxygen, the CdTe deposition should be conducted in an oxygen-free atmosphere. Improper oxygen management leads to low device performance due to the formation of a photoinactive Cd(S,Se) region and reduced absorber quality. Additionally, we investigated the carrier transport and collection properties in devices with photoinactive Cd(S,Se) and photoactive Cd(O,S,Se,Te) at the front interface to gain comprehensive understanding of the mechanisms that resulted in improved efficiencies approaching 20%.

CdTe deposition↗
DOE OSTI2022

As–Se Pentagonal Linkers to Induce Chirality and Polarity in Mixed-Valent Fe–Se Tetrahedral Chains Resulting in Hidden Magnetic Ordering

A novel mixed-valent hybrid chiral and polar compound, Fe 7 As 3 Se 12 (en) 6 (H 2 O), has been synthesized by a single-step solvothermal method. The crystal structure consists of 1D [Fe 5 Se 9 ] chains connected via [As 3 Se 2 ]–Se pentagonal linkers and charge-balancing interstitial [Fe(en) 3 ] 2+ complexes (en = ethylenediamine). Neutron powder diffraction verified that interstitial water molecules participate in the crystal packing. Magnetic polarizability of the produced compound was confirmed by X-ray magnetic circular dichroism (XMCD) spectroscopy. X-ray absorption spectroscopy (XAS) and 57 Fe Mössbauer spectroscopy showed the presence of mixed-valent Fe 2+ /Fe 3+ in the Fe–Se chains. Magnetic susceptibility measurements reveal strong antiferromagnetic nearest neighbor interactions within the chains with no apparent magnetic ordering down to 2 K. Hidden short-range magnetic ordering below 70 K was found by 57 Fe Mössbauer spectroscopy, showing that a fraction of the Fe 3+ /Fe 2+ in the chains are magnetically ordered. Nevertheless, complete magnetic ordering is not achieved even at 6 K. Analysis of XAS spectra demonstrates that the fraction of Fe 3+ in the chain increases with decreasing temperature. Computational analysis points out several competing ferrimagnetic ordered models within a single chain. Here, this competition, together with variation in the Fe oxidation state and additional weak intrachain interactions, is hypothesized to prevent long-range magnetic ordering.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Optimization of the Growth of the Van der Waals Materials Bi 2 Se 3 and (Bi 0.5 In 0.5 ) 2 Se 3 by Molecular Beam Epitaxy

The naturally existing chalcogenide Bi 2 Se 3 is topologically nontrivial due to the band inversion caused by the strong spin-orbit coupling inside the bulk of the material. Here, the surface states are spin polarized, protected by the time-inversion symmetry, and thus robust to the scattering caused by nonmagnetic defects. A high-purity topological insulator thin film can be easily grown via molecular beam epitaxy (MBE) on various substrates to enable novel electronics, optics, and spintronics applications. However, the unique surface state properties have historically been limited by the film quality, which is evaluated by crystallinity, surface morphology, and transport data. Here we propose and investigate different MBE growth strategies to improve the quality of Bi 2 Se 3 thin films grown by MBE. Based on the surface passivation status, we have classified the substrates into two categories, self-passivated or unpassivated, and determine the optimal growth mechanisms on the representative sapphire and GaAs, respectively. For Bi 2 Se 3 on GaAs, the surface passivation status determines the dominant growth mechanism. In the end, growths of the topological trivial insulator (Bi 0.5 In 0.5 ) 2 Se 3 (BIS) on GaAs are investigated following the protocols proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Li2[SeC2Se] · 2 NH3: A Crystalline Ammoniate with a-Se-C=C-Se- Dianion

Reaction of Li2C2 with elemental selenium in a molar ratio of 1:2 in liquid ammonia led to the formation of the ammoniate Li2[SeC2Se] ? 2 NH3. Its crystal structure was solved and refined from high-resolution synchrotron powder diffraction data (P21/c, Z = 4). It contains the ?Se-C?C-Se? anion, unprecedented in a crystalline material, whose existence was corroborated by IR/Raman spectra and electronic-structure theory, showing an almost perfect agreement with calculated spectra. Elaborated magnetic-bottle and velocity-map imaging photoelectron spectroscopic investigations show that the ?Se-C?C-Se? radical anion can be transferred to the gas phase, where it was analyzed by NIPE (Negative Ion Photoelectron) and VMI (Velocity-Map Imaging) spectra, which correlate nicely with simulated spectra based on 2?u ? 3Sg – and 2?u ?1Sg + transitions including spin-orbit couplings

Hetzert, Marc↗
DOE OSTI2021

Crystal Structure of Colloidally Prepared Metastable Ag 2 Se Nanocrystals

Structural polymorphism is known for many bulk materials; however, on the nanoscale metastable polymorphs tend to form more readily than in the bulk, and with more structural variety. One such metastable polymorph observed for colloidal Ag 2 Se nanocrystals has traditionally been referred to as the “tetragonal” phase. While there are reports on the chemistry and properties of this metastable polymorph, its crystal structure, and therefore electronic structure, has yet to be determined. We report that an anti-PbCl 2 -like structure type (space group P2 1 /n) more accurately describes the powder X-ray diffraction and X-ray total scattering patterns of colloidal Ag 2 Se nanocrystals prepared by several different methods. Density functional theory (DFT) calculations indicate that this anti-PbCl 2 -like Ag 2 Se polymorph is a dynamically stable, narrow-band-gap semiconductor. Here, the anti-PbCl 2 -like structure of Ag 2 Se is a low-lying metastable polymorph at 5–25 meV/atom above the ground state, depending on the exchange-correlation functional used.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Octahedral to tetrahedral bonding transitions in the local structure of phase change optical media Ge 2 Sb 2 Se 5 x Te 5-5 x with Se doping

Random access memories utilize fast, reversible switching between ordered and disordered states of matter in phase change materials (PCMs) such as Ge2Sb2Te5-5x. The short-range structure in the disordered phase has been described either as (i) a network of Ge tetrahedra or (ii) Peierls distorted Ge/Sb octahedra. The PCM transition was investigated in bulk Ge2Sb2Se5xTe5-5x (GSST), in which amorphization sets in with Se doping (x ≈ 0.85) upon quenching. GSST has a hexagonal crystalline ground state with Ge/Sb octahedral coordination, but the phase change transition to the amorphous state that is only observed when the system is quenched brings a short-range structure with sharp, tetrahedrally coordinated Ge/Sb correlations and shortened bonds that are distinctly different from the expected octahedral pairing.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Oxidation of Dissolved Tetravalent Selenium by Birnessite: Se Isotope Fractionation and the Effects of pH and Birnessite Structure

Redox reactions control the mobility and bioavailability of selenium (Se) in biogeochemical systems, both modern and ancient. Se isotope ratio measurements (e.g., 82 Se/ 76 Se) have been developed to enhance understanding of biogeochemical transformations and transport of Se. Stable isotope ratios of many elements are known to be powerful indicators of redox reactions, and shifts in 82 Se/ 76 Se have been observed for Se reduction reactions. However, Se isotope shifts caused by naturally relevant oxidation reactions have not been published. Here, we report Se isotope fractionation factors for oxidation of Se(IV) by birnessite. Experiments were conducted at pH = 4.0 and 5.5, with two types of birnessite of contrasting composition at two concentrations of suspended birnessite. The results are consistent with a single 82 Se/ 76 Se fractionation factor, for all times during all experiments, of 0.99767 (±0.0035 2 s.d.). Expressed as ε, the fractionation is 2.33‰ (±0.08‰).

58 GEOSCIENCES↗
DOE OSTI2021

Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells

Recent developments in CdTe solar cell technology have included the incorporation of ternary alloy Cd(Se,Te) in the devices. CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can result in device performance improvement. Here we report Cd(Se,Te) polycrystalline thin films grown by a chamberless inline atmospheric pressure metal organic chemical vapour deposition technique, with subsequent incorporation in CdTe solar cells. The compositional dependence of the crystal structure and optical properties of Cd(Se,Te) are examined. Selenium graded Cd(Se,Te)/CdTe absorber structure in devices are demonstrated using either a single CdSe layer or CdSe/Cd(Se,Te) bilayer (with or without As doping in the Cd(Se,Te) layer). Cross-sectional TEM/EDS, photoluminescence spectra and secondary ion mass spectroscopy analysis confirmed the formation of a graded Se profile toward the back contact with a diffusion length of ~1.5 um and revealed back-diffusion of Group V (As) dopants from the CdTe layer into Cd(Se,Te) grains. Due to the strong Se/Te interdiffusion, CdSe in the Se bilayer configuration was unable to form an n-type emitter layer in processed devices. In situ As doping of the Cd(Se,Te) layer benefited the device junction quality with current density reaching 28.3 mA/cm 2 . The results provide useful insights for the optimisation of Cd(Se,Te)/CdTe solar cells.

14 SOLAR ENERGY↗