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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Nuclear Data Sheets for A = 71

The evaluated spectroscopic data are presented for experimentally known nuclides of mass 71 (Mn,Fe,Co,Ni,Cu,Zn,Ga,Ge,As,Se,Br,Kr). Excited-state data are nonexistent for {sup 71}Mn, {sup 71}Fe, {sup 71}Co and {sup 71}Kr. Significant new data have been added since the last evaluation of A=71 nuclides by M. Bhat (1993Bh02). Excited states are now known in {sup 71}Ni and {sup 71}Cu, and enhanced information about high-spin excitations is available for {sup 71}Ga, {sup 71}As and {sup 71}Br. The decay schemes of radioactive isotopes {sup 71}Mn and {sup 71}Fe are not known at all, and those for {sup 71}Co, {sup 71m}Ni and {sup 71}Kr are not known well. For the decay of {sup 71}Cu, {sup 71g}Ni, and {sup 71}Br, extensive data are available, but in the opinion of the evaluators the decay schemes still seem incomplete. This work supersedes earlier full evaluations of A=71 published by 1988Bh01, 1979Ke06 and 1973Al33, and the last one published in 'update' mode by 1993Bh02.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2014

β Decay in the Region of Neutron-deficient {sup 69,70,71}Kr

Decay spectroscopy was performed for neutron-deficient nuclei ranging from zinc to krypton with isospin −3/2 ≤T{sub z}≤0. Measurements of correlated β-delayed protons allowed us to determine the isobaric analog states fed from the decay of {sup 65}Se and {sup 69}Kr, constraining the spin of the {sup 69}Kr ground state. Preliminary results regarding the half lives for the T{sub z}=−1 systems, relevant to the rapid proton capture (rp) process, are discussed.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1975

Selenium in soils of the Lower Wasatch Formation, Campbell County, Wyoming: Geochemistry, distribution, and environmental hazards

The author has identified the following significant results. Seleniferous Shingle series soils and sandstone outcrops of section 27, T 48 N, R 71 W, Wyoming are mapped on aerial photography by their association with Astragalus bisulcatus. Chemical leachate analyses and atomic absorption methods reveal all studied Samsil and Shingle soils to contain acid, base, and water soluble selenium compounds, and that water extractions showed varied concentration behavior due to soil pH. Acid-soluble selenium is found to be associated with smectite. Statistical analyses confirm that A. bisulcatus presence has a weak influence on soil-lens organic selenium concentration, and determine the importance of other geobotanical factors for convertor presence. Environmental procedures of high selenium lens burial, convertor plant eradication, and revegetated site monitoring are recommended. Usage of density analysis and photographic enlargement are used to successfully produce both a control area and a Campbell County, Wyoming regional map of A. bisulcatus supportive soils and outcrops using Skylab photography.

Kolm, K. E.↗
DOE OSTI2015

Band gap and refractive index tunability in thallium based layered mixed crystals

Compositional variation of the band gap energy and refractive index of TlMeX{sub 2}-type (Me = Ga or In and X = S or Se) layered mixed crystals have been studied by the transmission and reflection measurements in the wavelength range of 400–1100 nm. The analysis of absorption data of TlGa{sub 1-x}In{sub x}Se{sub 2}, TlGa(S{sub 1−x}Se{sub x}){sub 2}, TlGa{sub 1−x}In{sub x}S{sub 2}, and TlIn(Se{sub 1−x}S{sub x}){sub 2} mixed crystals revealed the presence of both optical indirect and direct transitions. It was found that the energy band gaps of mixed crystals decrease at the replacing of gallium atoms by indium and of sulfur atoms by selenium ones. Through the similar replacing of atoms (smaller atoms by larger ones) in the studied mixed crystals, the refractive index shows the quite opposite behavior.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Preparation of Cu{sub 2}ZnSnSe{sub 4} solar cells by low-temperature co-evaporation and following selenization

Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films are prepared by a two-step method which involves co-evaporation of Cu, Zn, Sn, and Se on molybdenum-coated soda-lime glass at low substrate temperature and a following selenization. Solar cells with efficiencies of up to 6.5% can be achieved. The influence of the selenium deposition rates during co-evaporation and the nitrogen pressure during selenization on the properties of the CZTSe films are investigated. It is found that these two parameters can significantly affect the morphology and crystallinity of the CZTSe films. The possible reasons for the experimental results are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Tellurium doping effect in avalanche-mode amorphous selenium photoconductive film

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a long wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Surface defect passivation of MoS{sub 2} by sulfur, selenium, and tellurium

Few-layer MoS{sub 2} field-effect transistors often show an n-type conduction behavior due to the presence of high-density sulfur vacancies. Here, we investigated the possibility of surface defect passivation of MoS{sub 2} by sulfur treatment in (NH{sub 4}){sub 2}S solution or coating with an ultrathin layer of selenium or tellurium. It was found that all three elements investigated are able to induce a p-doping effect through suppressing the residual electron concentration by an amount exceeding 0.5 × 10{sup 12 }cm{sup −2} in few-layer MoS{sub 2}. Among them, the sulfur-treatment exhibits the most superior thermal stability that survives thermal annealing at temperatures ≥120 °C for at least 10 h. Tellurium exhibits the strongest p-doping effect due to electron trapping by physisorption-induced gap states near the valence band edge. On the other hand, selenium is highly volatile on MoS{sub 2}; it evaporates and desorbs easily due to Joule heating during electrical measurements in vacuum. The results of first-principles calculations support the experimental observations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

KF post-deposition treatment of industrial Cu(In, Ga)(S, Se) 2 thin-film surfaces: Modifying the chemical and electronic structure

The chemical and electronic structures of industrial chalcopyrite photovoltaic absorbers after KF post-deposition treatment (KF-PDT) are investigated using electron spectroscopies to probe the occupied and unoccupied electronic states. In contrast to a variety of recent publications on the impact of KF-PDT, this study focuses on industrial Cu(In,Ga)(S,Se) 2 absorbers that also contain sulfur at the surface. We find that the KF-PDT removes surface adsorbates and oxides and also observe a change in the S/Se ratio. Furthermore, the KF-PDT leads to a Cu reduction at the surface but to a much lower degree than the strongly Cu-depleted or even Cu-free surfaces reported for (non-industrial) sulfur-free Cu(In,Ga)Se 2 absorbers. Furthermore, the valence band maximum at the surface is found at a lower energy compared to the untreated absorber, and the conduction band minimum is found at a higher energy, overall revealing a widening of the bandgap in the surface region.

14 SOLAR ENERGY↗
DOE OSTI2015

A photoluminescence study of excitonic grade CuInSe{sub 2} single crystals irradiated with 6 MeV electrons

High-quality single crystals of CuInSe{sub 2} with near-stoichiometric elemental compositions were irradiated with 6 MeV electrons, at doses from 10{sup 15} to 3 × 10{sup 18 }cm{sup −2}, and studied using photoluminescence (PL) at temperatures from 4.2 to 300 K. Before irradiation, the photoluminescence spectra reveal a number of sharp and well resolved lines associated with free- and bound-excitons. The spectra also show broader bands relating to free-to-bound transitions and their phonon replicas in the lower energy region below 1.0 eV. The irradiation with 6 MeV electrons reduces the intensity of the free- and the majority of the bound-exciton peaks. Such a reduction can be seen for doses above 10{sup 16 }cm{sup −2}. The irradiation induces new PL lines at 1.0215 eV and 0.9909 eV and also enhances the intensity of the lines at 1.0325 and 1.0102 eV present in the photoluminescence spectra before the irradiation. Two broad bands at 0.902 and 0.972 eV, respectively, are tentatively associated with two acceptor-type defects: namely, interstitial selenium (Se{sub i}) and copper on indium site (Cu{sub In}). After irradiation, these become more intense suggesting an increase in the concentration of these defects due to irradiation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Influence of Te and Se doping on ZnO films growth by SILAR method

The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Spectroscopic ellipsometry study of Cu{sub 2}ZnSnSe{sub 4} bulk crystals

Using spectroscopic ellipsometry we investigated and analyzed the pseudo-optical constants of Cu{sub 2}ZnSnSe{sub 4} bulk crystals, grown by the Bridgman method, over 0.8–4.5 eV photon energy range. The structures found in the spectra of the complex pseudodielectric functions were associated to E{sub 0}, E{sub 1A}, and E{sub 1B} interband transitions and were analyzed in frame of the Adachi's model. The interband transition parameters such as strength, threshold energy, and broadening were evaluated by using the simulated annealing algorithm. In addition, the pseudo-complex refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity were derived over 0.8–4.5 eV photon energy range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Possible atomic structures responsible for the sub-bandgap absorption of chalcogen-hyperdoped silicon

Single-crystal silicon was hyperdoped with sulfur, selenium, and tellurium using ion implantation and nanosecond laser melting. The hyperdoping of such chalcogen elements led to strong and wide sub-bandgap light absorption. Annealing the hyperdoped silicon, even at low temperatures (such as 200–400 °C), led to attenuation of the sub-bandgap absorption. To explain the attenuation process, we modeled it as chemical decomposition reaction from an optically absorbing structure to a non-absorbing structure. Attenuation of the experimental absorption coefficient was fit using the Arrhenius equation. From the fitted data, we extracted the reaction activation energies of S-, Se-, and T-hyperdoped silicon as 0.338 ± 0.029 eV, 0.471 ± 0.040 eV, and 0.357 ± 0.028 eV, respectively. We discuss these activation energies in terms of the bond energies of chalcogen–Si metastable bonds, and suggest that several high-energy interstitial sites, rather than substitutional sites, are candidates for the atomic structures that are responsible for the strong sub-bandgap absorption of chalcogen hyperdoped silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Sulfides from Martian and Lunar Basalts: Comparative Chemistry for Ni Co Cu and Se

Here Mars and Moon are used as 'natural laboratories' with Moon displaying lower oxygen fugacities ({approx}IW-1) than Mars ({approx}IW to FMQ). Moon has lower concentrations of Ni and Co in basaltic melts than does Mars. The major sulfides are troilite (FeS) in lunar basalts and pyrrhotite (Fe{sub 1-x}S) in martian basalts. This study focuses on the concentrations of Ni, Co, Cu, and Se. We chose these elements because of their geochemical importance and the feasibility of analyzing them with a combination of synchrotron X-ray fluorescence (SXRF) and electron microprobe (EPMA) techniques. The selenium concentrations could only be analyzed, at high precision, with SXRF techniques as they are <150 ppm, similar to concentrations seen in carbonaceous chondrites and interplanetary dust particles (IDPs). Nickel and Co are in higher concentrations in martian sulfides than lunar and are higher in martian olivine-bearing lithologies than olivine-free varieties. The sulfides in individual samples show very large ranges in concentration (e.g., Ni ranges from 50 000 ppm to <5 ppm). These large ranges are mainly due to compositional heterogeneities within individual grains due to diffusion and phase separation. Electron microprobe wavelength-dispersive (WDS) mapping of Ni, Co, and Cu show the diffusion trajectories. Nickel and Co have almost identical diffusion trajectories leading to the likely nucleation of pentlandite (Ni,Co,Fe){sub 9}S{sub 8}, and copper diffuses along separate pathways likely toward chalcopyrite nucleation sites (CuFeS{sub 2}). The systematics of Ni and Co in lunar and martian sulfides clearly distinguish the two parent bodies, with martian sulfides displaced to higher Ni and Co values.

58 GEOSCIENCES↗
DOE OSTI2011

Direct Mass Measurements of Short-Lived A=2Z-1 Nuclides {sup 63}Ge, {sup 65}As, {sup 67}Se, and {sup 71}Kr and Their Impact on Nucleosynthesis in the rp Process

Mass excesses of short-lived A=2Z-1 nuclei {sup 63}Ge, {sup 65}As, {sup 67}Se, and {sup 71}Kr have been directly measured to be -46 921(37), -46 937(85), -46 580(67), and -46 320(141) keV, respectively. The deduced proton separation energy of -90(85) keV for {sup 65}As shows that this nucleus is only slightly proton unbound. X-ray burst model calculations with the new mass excess of {sup 65}As suggest that the majority of the reaction flow passes through {sup 64}Ge via proton capture, indicating that {sup 64}Ge is not a significant rp-process waiting point.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2015

Enhanced thermoelectric properties of phase-separating bismuth selenium telluride thin films via a two-step method

A two-step method that combines homogeneous electron beam (EB) irradiation and thermal annealing has been developed to enhance the thermoelectric properties of nanocrystalline bismuth selenium telluride thin films. The thin films, prepared using a flash evaporation method, were treated with EB irradiation in a N{sub 2} atmosphere at room temperature and an acceleration voltage of 0.17 MeV. Thermal annealing was performed under Ar/H{sub 2} (5%) at 300 °C for 60 min. X-ray diffraction was used to determine that compositional phase separation between bismuth telluride and bismuth selenium telluride developed in the thin films exposed to higher EB doses and thermal annealing. We propose that the phase separation was induced by fluctuations in the distribution of selenium atoms after EB irradiation, followed by the migration of selenium atoms to more stable sites during thermal annealing. As a result, thin film crystallinity improved and mobility was significantly enhanced. This indicates that the phase separation resulting from the two-step method enhanced, rather than disturbed, the electron transport. Both the electrical conductivity and the Seebeck coefficient were improved following the two-step method. Consequently, the power factor of thin films that underwent the two-step method was enhanced to 20 times (from 0.96 to 21.0 μW/(cm K{sup 2}) that of the thin films treated with EB irradiation alone.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Magnetism and magnetocrystalline anisotropy in single-layer PtSe{sub 2}: Interplay between strain and vacancy

The electronic and magnetic properties of the newly synthesized single-layer (1 L) transition-metal dichalcogenide (TMD) PtSe{sub 2} are studied by first-principles calculations. We find the strain or selenium vacancy (V{sub Se}) alone cannot induce the magnetism. However, an interplay between strain and V{sub Se} leads to the magnetism due to the breaking of Pt-Pt metallic bonds. Different from the case of 1 L-MoS{sub 2} with V{sub S}, the defective 1 L-PtSe{sub 2} has the spatially extended spin density, which is responsible for the obtained long range ferromagnetic coupling. Moreover, the 1 L-PtSe{sub 2} with V{sub Se} undergoes a spin reorientation transition from out-of-plane to in-plane magnetization, accompanying a maximum magnetocrystalline anisotropy energy of ∼9–10.6 meV/V{sub Se}. These results indicate the strain not only can effectively tune the magnetism but also can manipulate the magnetization direction of 1 L-TMDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Impact of Pb content on the physical parameters of Se-Te-Pb system

In the present study, we have investigated the impact of Pb content on the physical parameters in Se-Te-Pb system via average coordination number, constraints, the fraction of floppy modes, cross-linking density, lone pairs electrons, heat of atomization, mean bond energy, cohesive energy and electronegativity. The bulk samples have been prepared by using melt quenching technique. X-ray diffraction pattern of various samples indicates the amorphous nature of investigated glassy alloys. It is observed that average coordination number, average number of constraints and cross-linking density increase with Pb content. However, lone-pair electrons, floppy modes, average heat of atomization, cohesive energy and mean bond energy are found to decrease with Pb atomic percentage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗