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Results for “SEMICONDUCTOR DETECTORS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Applications of principal component analysis for energy reconstruction in position-sensitive semiconductor detectors

We report semiconductor detectors with pixelated anodes offer a desirable combination of position sensitivity and energy resolution that are suitable for numerous applications in gamma-ray detection and imaging. Pixelization of electrodes also entails a non-uniform amplitude response as a function of gamma-ray interaction position. Energy calibrations as a function of interaction position improve energy resolution, but systematic errors in the energy reconstruction process persist and limit energy resolution at fixed electronic noise. Digitization of signals induced on collecting and adjacent electrodes offers rich information about gamma-ray interactions and their charge drift and collection as a function of time. Despite the abundance of signals for each interaction, human intuition and rule-based approaches fail to utilize the entire set of observed signals to mitigate the sources of systematic error. In order to maximize the utility of digitized signals and improve energy resolution, principal component analysis is applied towards digitized signals observed in semiconductor detectors with pixelated anodes. Principal components identified in the process form the basis for position-specific energy corrections. By leveraging this additional information encoded within digitized signals, energy resolution improves by factors between 10 and 15% with respect to full-width at half and tenth maximum values. The feature that accounts for the maximum amount of explained variance between interactions in any given pixel correlates strongly with the depth of interaction.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

Theoretical Approach to Energy Resolution of Semiconductor Detectors

All processes occurring in semiconductor detectors during detection of primary monoenergetic particles lead to broadening of spectral lines. In this work, a general expression for the energy resolution of semiconductor detectors is obtained using the theory of branching cascade processes. It is shown that the general formula involves all contributions to the spectral line broadening described in the literature and additional contributions associated with fluctuations of electron and hole lifetimes caused by inhomogeneity of traps in the semiconductor material and fluctuations of the electronic channel gain.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Development of Large Cryogenic Semiconductor Detectors

This project aims at developing large cryogenic semiconductor detectors for applications in particle physics and more broadly. We have developed a 150 mm diameter, 43 mm thick, Si-based detector that measures ionization released in an interaction of a particle inside the silicon crystal of high purity, operated at 30 mK temperature. We demonstrated that such a detector can be used to measure recoil energies on the keV scale, and that its stable operation can be maintained indefinitely. Detectors of this type could therefore be used in the fields of direct dark matter searches, coherent neutrino scattering measurements, X-ray observations, as well as in broader applications such as homeland security.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

A guide on modeling electrostatics of semiconductor detectors in COMSOL Multiphysics ® for DRiFT

Adding a new semiconductor detector into the detector response function toolkit (DRiFT) requires a model of the electric potential and the electric field. To get an accurate electrostatics model, the geometry of the detector should be modeled as closely to the real geometry as feasible, including the semiconductor materials, doping layers and concentrations, and contacts. Since the electric field and potential are used to calculate the induced signal, the results of the detector response functions are largely influenced by the electrostatics models. Initial electrostatics models were completed using Silvaco, however, this document provides guidance on using COMSOL Mulitphysics ® (COMSOL) to model the detectors to give users additional flexibility. Guidance on using COMSOL and its user interface are mostly left out of this document, but best practices for geometry, modeling methods, and data format/exporting are included to help users generate models that are compatible with DRiFT, prevents bugs, issues, and inaccuracies during charge collection calculations. The following summary provides an overview of the document.

42 ENGINEERING↗
DOE OSTI2016

Measurement of effect of electron cyclotron heating in a tandem mirror plasma using a semiconductor detector array and an electrostatic energy analyzer

Temporally and spatially resolved soft x-ray and end-loss-electron analyses of the electron cyclotron heated plasmas are carried out by using a semiconductor detector array and an electrostatic energy analyzer in the GAMMA 10 tandem mirror. The flux and the energy spectrum of the end loss electrons are measured by a multi-grid energy analyzer. Recently, the electron cyclotron heating power modulation experiments have been started in order to generate and control the high heat flux and to make the edge localized mode-like intermittent heat load pattern for the divertor simulation studies by the use of these detectors for electron properties.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Ultrahigh‐Flux X‐ray Detection by a Solution‐Grown Perovskite CsPbBr 3 Single‐Crystal Semiconductor Detector

Abstract Solution‐processed perovskites are promising for hard X‐ray and gamma‐ray detection, but there are limited reports on their performance under extremely intense X‐rays. Here, a solution‐grown all‐inorganic perovskite CsPbBr 3 single‐crystal semiconductor detector capable of operating at ultrahigh X‐ray flux of 10 10 photons s −1 mm −2 is reported. High‐quality solution‐grown CsPbBr 3 single crystals are fabricated into detectors with a Schottky diode structure of eutectic gallium indium/CsPbBr 3 /Au. A high reverse‐bias voltage of 1000 V (435 V mm − 1 ) can be applied with a small and stable dark current of ≈60–70 nA (≈9–10 nA mm − 2 ), which enables a high sensitivity larger than 10 000 µC Gy air −1 cm − 2 and a simultaneous low detection limit of 22 nGy air s − 1 . The CsPbBr 3 semiconductor detector shows an excellent photocurrent linearity and reproducibility under 58.61 keV synchrotron X‐rays with flux from 10 6 to 10 10 photons s − 1 mm − 2 . Defect characterization by thermally stimulated current spectroscopy shows a similar low defect density of a synchrotron X‐ray and a lab X‐ray irradiated device. Solid‐state nuclear magnetic resonance spectroscopy suggests that the excellent performance of the solution‐grown CsPbBr 3 single crystal may be associated with its good short‐range order, comparable to the spectrometer‐grade melt‐grown CsPbBr 3 .

Pan, Lei↗
DOE OSTI2016

Electrodeposition of Actinides on a Semiconductor Detector for Concentration Monitoring

Pyroprocessing is a promising technology for separation and recycle of actinides from spent nuclear fuel. It is being actively researched in the United States as well as the Republic of Korea for possible implementation into a closed nuclear fuel cycle. The features of the chemical technology behind pyro-processing, unfortunately, present difficulties for real time accounting of actinides. Development of optimal process monitoring technology and safeguards approaches are, thus, a high priority for completing the development of the overall process technology. Real time monitoring of actinide concentrations in the molten salt electro-refiners is particularly important to achieve because of the potential for multiple significant quantities of plutonium in the molten salt. To address this need, development of a semiconductor detector for real-time monitoring of actinides in molten chloride salt (LiCl-KCl) is being conducted. Towards this end, a novel alpha spectroscopy detection system is being developed using wide band-gap semiconductor material, such as GaN or SiC, with a Boron-Doped-Diamond (BDD) contact. The objective is to deposit a thin layer of actinides onto the BDD layer, which will be used to measure the alpha particle spectrum that will distinguish individual actinides and their concentration. In the first stage, the actinide electrodeposition onto a surrogate material for the detector has been undertaken. While this project is in its very early states, a couple of observations have been made. One is that the electrodeposition is a slow, diffusion-controlled process. Therefore the deposit should be as thin (≅1 m) as the alpha spectroscopy permits (the resolution gets inferior with lesser number of atoms). Also, applied potentials should not be too negative; otherwise the deposit does not adhere well to the surface. The application of this method to measuring actinides in molten salt appears to be feasible, and a considerable amount of further investigation is planned. (authors)

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2017

Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements

Charge trapping, resulting in a decreased and spatially dependent electric field, has long been a concern for wide bandgap semiconductor detectors. While significant work has been performed to characterize this degradation at varying temperatures and radiation environments, this work concentrates upon examining the event-to-event response in a flash X-ray environment. The following work investigates if charge trapping is a problem for CZT detectors, with particular emphasis on flash X-ray radiation fields at cold temperatures. Results are compared to a non-flash radiation field, using an Am-241 alpha source and similar temperature transitions. Our ability to determine if a response change occurred was hampered by the repeatability of our flash X-ray systems; a small response change was observed with the Am-241 source. Due to contrast of these results, we are in the process of revisiting the Am-241 measurements in the presence of a high radiation environment. If the response change is more pronounced in the high radiation environment, a similar test will be performed in the flash X-ray environment.

47 OTHER INSTRUMENTATION↗