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Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy
Ultrawide bandgap semiconductors are important for a broad range of electronic and photonic devices, but their practical application has been limited by poor current conduction. Here, we demonstrate that with controlled tuning of the Fermi level by an in situ metal-semiconductor junction during epitaxy, efficient p-type conduction, which was otherwise impossible, can be achieved for large bandgap aluminum gallium nitride (AlGaN). During epitaxy, the Fermi level is pinned away from the valence band edge, which fundamentally reduces the formation energy for substitutional Mg-dopant incorporation while simultaneously increasing the formation energy for compensating defects. In this work, we have demonstrated that Mg-doped Al 0.9 Ga 0.1 N can exhibit free hole concentration 4.5 × 10 ∼17 cm -3 , with a resistivity < 5 Ω · cm, which is nearly three orders of magnitude lower compared to previous reports. Ultraviolet 280-nm light emitting diodes grown using this method exhibited nearly an order of magnitude improvement in external quantum efficiency compared to those grown using conventional molecular beam epitaxy. Such a unique technique can be extended for the epitaxy/synthesis of a broad range of wide bandgap semiconductors to achieve efficient current conduction that was not previously possible.
Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions
A possible explanation is suggested for discrepancies between experimental values obtained by different authors for the barrier height at the same metal–semiconductor junction. It is supposed that the problem is caused primarily by the structural inhomogeneity of the metal. As a result, the junction behaves as an assembly of a large number of subjunctions connected in parallel. To determine the effect of metal inhomogeneity on the properties of a junction, the dependence of the barrier height in a Schottky diode on the junction area is investigated under the assumption that, with an increase in the area of a junction between a singlecrystal semiconductor and a polycrystalline metal, the degree of inhomogeneity and, thus, the number of subjunctions, increases.
Doped semiconductor nanocrystal junctions
Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.
Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures
Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-doped photocathodes by using a buried p-n junction. Lastly, advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.
Quantum statistical theory of semiconductor junctions in thermal equilibrium
Free carrier and electric field distributions of one-dimensional semiconductor junctions are evaluated using a quantum mechanical phase-space distribution and its corresponding Boltzmann equation. Attention is given to quantum and exchange corrections in cases of high doping concentrations when carrier densities become degenerate. Quantitative differences between degenerate and classical junction characteristics, e.g., maximum electric field and built-in voltage and carrier concentration within the transition region, are evaluated numerically.
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.
Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions
Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at the metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.
Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction
Ab initio studies of a GaN(0001)-Ga system with various thicknesses of a metallic Ga layer were undertaken. The studied systems extend from a GaN(0001) surface with a fractional coverage of gallium atoms to a Ga-GaN metal–semiconductor (m–s) contact. Electronic properties of the system are simulated using density functional theory calculations for different doping of the bulk semiconductor. It is shown that during transition from a bare GaN(0001) surface to a m–s heterostructure, the Fermi level stays pinned at a Ga-broken bond highly dispersive surface state to Ga–Ga states at the m–s interface. Adsorption of gallium leads to an energy gain of about 4 eV for a clean GaN(0001) surface and the energy decreases to 3.2 eV for a thickly Ga-covered surface. The transition to the m–s interface is observed. For a thick Ga overlayer such interface corresponds to a Schottky contact with a barrier equal to 0.9 and 0.6 eV for n- and p-type, respectively. Bond polarization-related dipole layer occurring due to an electron transfer to the metal leads to a potential energy jump of 1.5 eV, independent on the semiconductor doping. Additionally high electron density in the Ga–Ga bond region leads to an energy barrier about 1.2 eV high and 4 Å wide. This feature may adversely affect the conductivity of the n-type m–s system.
Interface Defect Engineering for Improved Graphene-Oxide-Semiconductor Junction Photodetectors
The deeply depleted graphene-oxide-semiconductor (D 2 GOS) junction detector provides an effective architecture for photodetection, enabling direct readout of photogenerated charge. Because of an inherent gain mechanism proportional to graphene’s high mobility (μ), this detector architecture exhibits large responsivities and signal-to-noise ratios (SNR). The ultimate sensitivity of the D2GOS junction detector may be limited, however, because of the generation of dark charge originating from interface states at the semiconductor/dielectric junction. Here, we examine the performance limitations caused by dark charge and demonstrate its mitigation via the creation of low interface defect junctions enabled by surface passivation. The resulting devices exhibit responsivities exceeding 10 000 A/W—a value which is 10× greater than that of analogous devices without the passivating thermal oxide. Finally, with cooling of the detector, the responsivity further increases to over 25 000 A/W, underscoring the impact of surface generation on performance and thus the necessity of minimizing interfacial defects for this class of photodetector.
Detection of high energy ionizing radiation using deeply depleted graphene–oxide–semiconductor junctions
Graphene’s linear band structure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene–oxide–semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of a silicon-based D2GOS junction is analyzed during irradiation with 20 MeV Si4+ ions. Detection was demonstrated for doses ranging from 12 to 1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D2GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent mapping. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.
Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions
Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 10 12 e/cm 2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 10 13 e/cm 2 ), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 10 13 e/cm 2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. As a result, the ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.
Graphene-Insulator-Semiconductor Junction for Hybrid Photodetection Modalities
A sensitive optical detector is presented based on a deeply depleted graphene-insulator-semiconducting (D 2 GIS) junction, which offers the possibility of simultaneously leveraging the advantages of both charge integration and localized amplification. Direct read-out and built-in amplification are accomplished via photogating of a graphene field-effect transistor (GFET) by carriers generated within a deeply depleted low-doped silicon substrate. Analogous to a depleted metal-oxide-semiconducting junction, photo-generated charge collects in the potential well that forms at the semiconductor/insulator interface and induces charges of opposite polarity within the graphene film modifying its conductivity. This device enables simultaneous photo-induced charge integration with continuous “on detector” readout through use of graphene. The resulting devices exhibit responsivities as high as 2,500 A/W (25,000 S/W) for visible wavelengths and a dynamic range of 30 dB. As both the graphene and device principles are transferrable to arbitrary semiconductor absorbers, D2GIS devices offer a high-performance paradigm for imaging across the electromagnetic spectrum
Direct Vibrational Stark Shift Probe of Quasi-Fermi Level Alignment in Metal Nanoparticle Catalyst-Based Metal–Insulator–Semiconductor Junction Photoelectrodes
Not Available
Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment
We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10−9 A at −50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics.
Depleted Graphene-Oxide-Semiconductor Junctions for High Energy Radiation Detection.
Abstract not provided.
A note on the assumption of quasiequilibrium in semiconductor junction devices
It is shown that the quasi-equilibrium theory for p-n junctions, as originally proposed by Shockley (1949), does not apply under conditions involving an application of comparatively low external voltages. A numerical example indicates that the quasi-equilibrium assumption must be discarded as soon as the voltage is increased beyond a certain critical value, although the system may still be in a low-level injection regime. It is currently not known which set of simplifying assumptions may replace the quasi-equilibrium assumptions. Possible analytic simplification relations applicable to moderate or high injection levels can, perhaps, be based on an approach considered by Mari (1968) and Choo (1971, 1972).
Laser velocimetry with diode junctions semiconductor lasers
Measurements of mean and fluctuating axial velocity have for the first time been made in a seeded pipe flow with a semiconductor laser velocimeter. Several compact velocimeters have been constructed using laser diodes. While the intended applications have restricted the final instrument to operate in a coaxial backscatter mode, operation has been demonstrated in forward and side scattering modes. In all cases the instrument could be classed as dual beam. An instrument has been constructed to be installed in a model airfoil and will be mechanically driven to measure the flow over a 75-mm chord distance. The instrument occupies a volume measuring 100 mm x 100 mm x 40 mm. The compactness has been aided by using an avalanche photodiode instead of a photomultiplier tube.