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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Jain, Raj K.↗
NASA NTRS1969

Short circuit protection for a power distribution system

Sensing circuit detects when the output from a matrix is present and when it should be present. The circuit provides short circuit protection for a power distribution system where the selection of the driven load is accomplished by digital logic.

Owen, J. R., III↗
NASA NTRS1980

Detecting short circuits during assembly

Detector circuit identifies shorts between bus bars of electronic equipment being wired. Detector sounds alarm and indicates which planes are shorted. Power and ground bus bars are scanned continuously until short circuit occurs.

Deboo, G. J.↗
NASA NTRS1980

Cell short circuit, preshort signature

Short-circuit events observed in ground test simulations of DSCS-3 battery in-orbit operations are analyzed. Voltage signatures appearing in the data preceding the short-circuit event are evaluated. The ground test simulation is briefly described along with performance during reconditioning discharges. Results suggest that a characteristic signature develops prior to a shorting event.

Lurie, C.↗
NASA NTRS1995

Electrical short circuit and current overload tests on aircraft wiring

The findings of electrical short circuit and current overload tests performed on commercial aircraft wiring are presented. A series of bench-scale tests were conducted to evaluate circuit breaker response to overcurrent and to determine if the wire showed any visible signs of thermal degradation due to overcurrent. Three types of wire used in commercial aircraft were evaluated: MIL-W-22759/34 (150 C rated), MIL-W-81381/12 (200 C rated), and BMS 1360 (260 C rated). A second series of tests evaluated circuit breaker response to short circuits and ticking faults. These tests were also meant to determine if the three test wires behaved differently under these conditions and if a short circuit or ticking fault could start a fire. It is concluded that circuit breakers provided reliable overcurrent protection. Circuit breakers may not protect wire from ticking faults but can protect wire from direct shorts. These tests indicated that the appearance of a wire subjected to a current that totally degrades the insulation looks identical to a wire subjected to a fire; however the 'fire exposed' conductor was more brittle than the conductor degraded by overcurrent. Preliminary testing indicates that direct short circuits are not likely to start a fire. Preliminary testing indicated that direct short circuits do not erode insulation and conductor to the extent that ticking faults did. Circuit breakers may not safeguard against the ignition of flammable materials by ticking faults. The flammability of materials near ticking faults is far more important than the rating of the wire insulation material.

Cahill, Patricia↗
NASA NTRS2008

Improved Short-Circuit Protection for Power Cells in Series

A scheme for protection against short circuits has been devised for series strings of lithium electrochemical cells that contain built-in short-circuit protection devices, which go into a high-resistance, current-limiting state when heated by excessive current. If cells are simply connected in a long series string to obtain a high voltage and a short circuit occurs, whichever short-circuit protection device trips first is exposed to nearly the full string voltage, which, typically, is large enough to damage the device. Depending on the specific cell design, the damage can defeat the protective function, cause a dangerous internal short circuit in the affected cell, and/or cascade to other cells. In the present scheme, reverse diodes rated at a suitably high current are connected across short series sub-strings, the lengths of which are chosen so that when a short-circuit protection device is tripped, the voltage across it does not exceed its rated voltage. This scheme preserves the resetting properties of the protective devices. It provides for bypassing of cells that fail open and limits cell reversal, though not as well as does the more-expensive scheme of connecting a diode across every cell.

Davies, Francis↗
DOE OSTI2024

Impact of K-factor on Short Circuit Program Convergence for Inverter-Based Resources during Faults

Classical short-circuit programs that linearize the power network are no longer applicable for inverter based resources (IBRs), necessitating an iterative approach. Phasor domain programs can model the IBRs using an iterative approach considering nonlinear fault responses. In phasor domain models, the IBR can be modeled as a voltage controlled current source (VCCS) in tabular form with positive, negative, and zero sequence information for balanced and unbalance short-circuit faults. In the VCCS modeling of the IBR, positive and negative incremental reactive current, also known as the k-factor, plays an important role in short circuit program convergence. In this work, a few approaches: conventional VCCS modeling with a k-factor of 2, conventional VCCS modeling with a k-factor of 2 with modified pre-fault voltages, VCCS characteristics based on the power flow solution with a k-factor of 2, and VCCS characteristics based on the power flow solution with a k-factor of 1 are investigated for short circuit program convergence under higher IBR penetration. The IEEE 39 bus New England Test System is taken as the test system, and simulations are carried out in PSS®CAPE 15.0.26 simulation software. Simulation results demonstrate that IBR penetration is higher for the VCCS model, which corresponds to the power flow solution with k-factor 1, compared to other approaches.

42 ENGINEERING↗
DOE OSTI2024

Assessing Inverter-Based Resources Modeling Gaps in Commonly Used Short-Circuit Programs

Future bulk power systems are expected to operate with a high penetration of inverter-based resources (IBR). This is anticipated to fundamentally change the system’s short-circuit behaviors and demand a change in existing transmission line protection settings or schemes. Phasor-domain short circuit programs (e.g., ASPEN, CAPE, and CYME) remain the mainstream tools for developing protection settings. However, the system protection community has shared concerns about the accuracy of IBR models in short-circuit programs. This report compares the performance of existing generic IBR models in short-circuit programs with detailed electro-magnetic transient (EMT) models provided by several different IBR manufacturers in PSCAD, to quantify the short-circuit program’s IBR model accuracy, assess their ability to replicate individual IBR controls such as negative sequence current injections, and identify specific gaps in the existing generic phasor-domain IBR models that are currently available.

42 ENGINEERING↗
DOE OSTI2024

Atomic-level mechanisms of short-circuit diffusion in materials

This paper reviews the recent progress in understanding the atomic mechanisms of short-circuit diffusion along materials interfaces, such as grain and interphase boundaries, as well as lattice and interfacial dislocations/disconnections. Recent atomistic computer simulations have shown that short-circuit diffusion is dominated by collective atomic rearrangements in the form of strings and rings of mobile atoms. The process is dynamically heterogeneous in space and time and has many features in common with atomic dynamics in supercooled glass-forming liquids. We discuss examples of grain boundary, interphase boundary, and dislocation diffusion in metals and alloys, including the solute effect on the diffusion rates and mechanisms. Interphase boundaries are exemplified by Al–Si interfaces with diverse orientation relationships and atomic structures. The hierarchy of short-circuit diffusion paths in materials is reviewed by comparing the rates of grain boundary, interphase boundary, and dislocation diffusion. Future directions in the field of short-circuit diffusion in defect core regions are discussed.

36 MATERIALS SCIENCE↗
NASA NTRS1976

Transient analysis of unbalanced short circuits of the ERDA-NASA 100 kW wind turbine alternator

Unbalanced short-circuit faults on the alternator of the ERDA-NASA Mod-O100-kW experimental wind turbine are studied. For each case, complete solutions for armature, field, and damper-circuit currents; short-circuit torque; and open-phase voltage are derived directly by a mathematical analysis. Formulated results are tabulated. For the Mod-O wind turbine alternator, numerical calculations are given, and results are presented by graphs. Comparisons for significant points among the more important cases are summarized. For these cases the transients are found to be potentially severe. The effect of the alternator neutral-to-ground impedance is evaluated.

Hwang, H. H.↗
NASA NTRS2010

Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish .

Courey, Karim J.↗
NASA NTRS2009

Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage.

Courey, Karim J.↗
NASA NTRS2009

Developing an Empirical Model for Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish.

Courey, Karim J.↗
DOE OSTI2024

Grid Forming Inverter With Increased Short-Circuit Contribution to Address Inverter-Based Microgrid Protection Challenges

Substantial differences in fault levels between grid-tied and islanded modes is one of the primary challenges of microgrid protection. During grid-tied mode, the bulk grid provides significant short-circuit, while during islanded operation the short-circuit magnitude is small due to inverter-based resources limiting their current output close to nominal ratings. Consequently, conventional distribution protection strategies based on overcurrent cannot reliably protect microgrids when operating in islanded mode. Fuses and circuit breakers are particularly affected because of their inverse characteristics. Presently, the absence of affordable solutions for protecting microgrids in islanded mode leads to microgrids shutting down during electrical faults. The contribution of this article is two-fold. The first innovation proposes specific hardware modifications to grid-forming inverters to increase their short-circuit current during electrical faults. The second innovation introduces a novel control strategy designed to preserve control stability margins even when the grid-filter saturates, ensuring sinusoidal output currents under normal and fault conditions. Through experimental results, the inverter with the proposed modifications can provide more than three-times its nominal current during electrical faults. For the prototype testbed, this was sufficient to enable the use of traditional legacy overcurrent protection, achieving the fuse-to-relay and relay-to-relay minimum coordination time for the line-to-ground, line-to-line to ground, and three-phase electrical faults.

42 ENGINEERING↗
NASA NTRS2011

Fast-responding short circuit protection system with self-reset for use in circuit supplied by DC power

A short circuit protection system includes an inductor, a switch, a voltage sensing circuit, and a controller. The switch and inductor are electrically coupled to be in series with one another. A voltage sensing circuit is coupled across the switch and the inductor. A controller, coupled to the voltage sensing circuit and the switch, opens the switch when a voltage at the output terminal of the inductor transitions from above a threshold voltage to below the threshold voltage. The controller closes the switch when the voltage at the output terminal of the inductor transitions from below the threshold voltage to above the threshold voltage.

Burns, Bradley M.↗
NASA NTRS2009

Tin Whisker Electrical Short Circuit Characteristics

Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish.

Courey, Karim J.↗