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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Quantitation of buried contamination by use of solvents

An investigation was made to determine (1) sporicidal properties of amine solvents that solubilize silicon resins, (2) recovery properties of a silicon potting compound (RTV 41) used in spacecraft, and (3) viability of spores during chemical curing of the potting compound. Results show that: (1) spores do remain viable during RTV 41 silicon potting chemical curing, and (2) spore recovery from cured silicon potting compound RTV 41 is very high when silicon rubber is dissolved in butylamine and series dilution with benzene prior to plate curing.

Pappas, S. P.↗
DOE OSTI2016

Nuclear Data Sheets for A = 41

Available information pertaining to the nuclear structure of all nuclei with mass numbers A=41 ranging from Al (Z=13) to Ti (Z=22) are presented. The experimental reaction and decay data are evaluated and any inconsistencies or discrepancies are noted. The adopted values for various level properties (such as the spin, parity and and halflife) and gamma properties (energy, intensity and multipole character) are given. Since the prior evaluation several new measurements have expanded our knowledge of A=41 nuclides. The half-life of the ground state of {sup 41}Si has been determined and a single excited state identified. Excited levels in {sup 41}P have been observed for the first time. In {sup 41}Cl, seven new excited states have been identified in deep inelastic and heavy ion transfer reactions. Half-lifes for four states in {sup 41}Ar have been updated and additional levels with gammas have been included from a new measurement using the multiple ion transfer reaction. In {sup 41}Ca via charge-exchange reaction measurements, several new excited states were observed. A number of new resonances in {sup 41}K have been identified via the (p,γ) reaction. There remains a significant discrepancy in the half-life of the first excited state (980 keV) in {sup 41}K, with measurements differing by more than an order of magnitude. Transfer reactions suggest that this M1 transition should be l-forbidden, however, several measurements yield a lifetime which suggests a sizable M1 strength. Further measurements to resolve the current conflicts would be beneficial.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2018

Electrometry by optical charge conversion of deep defects in 4H-SiC

Optically active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain, and temperature. Modern sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense the environment, in particular high-frequency (megahertz to gigahertz) electric fields, complementing established spin-based techniques. This is enabled by optical charge conversion of the defects between their photoluminescent and dark charge states, with conversion rate dependent on the electric field (energy density). The technique provides an all-optical high-frequency electrometer which is tested in 4H-SiC for both ensembles of divacancies and silicon vacancies, from cryogenic to room temperature, and with a measured sensitivity of 41±8(V/cm) 2 /√Hz. In conclusion, due to the piezoelectric character of SiC, we obtain spatial 3D maps of surface acoustic wave modes in a mechanical resonator.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Tuning Porosity and Surface Area in Mesoporous Silicon for Application in Li-Ion Battery Electrodes

This work aims to improve the poor cycle lifetime of silicon-based anodes for Li-ion batteries by tuning microstructural parameters such as pore size, pore volume, and specific surface area in chemically synthesized mesoporous silicon. In this paper, we have specifically produced two different mesoporous silicon samples from the magnesiothermic reduction of ordered mesoporous silica in either argon or forming gas. In situ X-ray diffraction studies indicate that samples made in Ar proceed through a Mg 2 Si intermediate, and this results in samples with larger pores (diameter ≈ 90 nm), modest total porosity (34%), and modest specific surface area (50 m 2 g –1 ). Reduction in forming gas, by contrast, results in direct conversion of silica to silicon, and this produces samples with smaller pores (diameter ≈ 40 nm), higher porosity (41%), and a larger specific surface area (70 m 2 g –1 ). The material with smaller pores outperforms the one with larger pores, delivering a capacity of 1121 mAh g –1 at 10 A g –1 and retains 1292 mAh g –1 at 5 A g –1 after 500 cycles. For comparison, the sample with larger pores delivers a capacity of 731 mAh g –1 at 10 A g –1 and retains 845 mAh g –1 at 5 A g –1 after 500 cycles. The dependence of capacity retention and charge storage kinetics on the nanoscale architecture clearly suggests that these microstructural parameters significantly impact the performance of mesoporous alloy type anodes. Our work is therefore expected to contribute to the design and synthesis of optimal mesoporous architectures for advanced Li-ion battery anodes.

25 ENERGY STORAGE↗
NASA NTRS2007

An Evaluation of High Temperature Airframe Seals for Advanced Hypersonic Vehicles

High temperature seals are required for advanced hypersonic airframe applications. In this study, both spring tube thermal barriers and innovative wafer seal systems were evaluated under relevant hypersonic test conditions (temperatures, pressures, etc.) via high temperature compression testing and room temperature flow assessments. Thermal barriers composed of a Rene 41 spring tube filled with Saffil insulation and overbraided with a Nextel 312 sheath showed acceptable performance at 1500 F in both short term and longer term compression testing. Nextel 440 thermal barriers with Rene 41 spring tubes and Saffil insulation demonstrated good compression performance up to 1750 F. A silicon nitride wafer seal/compression spring system displayed excellent load performance at temperatures as high as 2200 F and exhibited room temperature leakage values that were only 1/3 those for the spring tube rope seals. For all seal candidates evaluated, no significant degradation in leakage resistance was noted after high temperature compression testing. In addition to these tests, a superalloy seal suitable for dynamic seal applications was optimized through finite element techniques.

DeMange, Jeffrey J.↗
DOE OSTI2021

Advances in Coring Procedures of Silicon Photovoltaic Modules

We describe advances on procedures used for the coring of silicon photovoltaic modules. These procedures involve coring specific locations, starting from the back of the modules, and removing selected parts of the cell structure, while preserving the front tempered glass. The standard coring procedures had to be modified from case to case due to the different cell structures and measurement requirements. We provide examples of the characterization of the cored samples by scanning electron microscopy and energy-dispersive X-ray spectroscopy. Finally, we describe a simple process to create small openings at specific locations on the back of photovoltaic modules to allow for efficiency-related measurement of individual cells and groups of cells.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2023

Proton branching ratios in 22 Mg for X-ray bursts

Here, decay protons from 22 Mg energy levels populated through a previously reported 24 Mg(p, t) 22 Mg transfer reaction (Chae et al. in Phys Rev C 79:055804, 2009) have been analyzed for proton branching ratios as a follow-up analysis. The measurement was performed at the Holifield Radioactive Ion Beam Facility of Oak Ridge National Laboratory by utilizing 41-MeV proton beams and 24 Mg solid targets. Decay protons and reaction tritons were simultaneously detected with a silicon detector array. By investigating the 24 Mg(p, t) 22 Mg*(p) 21 Na channels, the proton branching ratios of five 22 Mg excited states were obtained. The measured branching ratios provide constraints on the proton partial widths of the populated 22 Mg levels, which have implications for X-ray burst nucleosynthesis.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2018

High-Quality Indium Phosphide Films and Nano-Network Grown Using Low-Cost Metal-Catalyzed Vapor-Liquid-Solid Method for Photovoltaic Applications

Growth of high-quality InP film is demonstrated by directly co-evaporating elemental In and P in a simple low-cost chemical vapor deposition (CVD) reactor. By exploring the interplay between the metal-assisted vapor–liquid–solid and vapor–solid mechanisms, the authors present the growth of highly stoichiometric InP thin films or nano-network in a wide range of growth temperature from 560 to 720 °C. Photoluminescence (PL) measurements reveal high optical quality of the as-grown InP film with PL bandwidth (≈49 meV) comparable to commercial InP wafer (≈41 meV). The versatility of this approach is demonstrated through successful growth of thin films on diverse substrates such as silicon, InP, and fused quartz. Additionally, the effects of catalysts are also studied by comparing growths based on Au-catalyst with In-self-catalyst (without Au). The temperature dependence study of Au-catalyzed growth shows that higher growth temperature results in formation of larger grain sizes and continuous void-free polycrystalline InP films. Preliminary solar cell devices are fabricated on a p-type silicon with an indium-tin-oxide contact layer. It is believed that the new growth strategy provides a simpler, lower cost (both precursors and substrates) approach for producing high-quality InP thin film for the fabrication of high efficiency, low-cost solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Education Highlights: Synthetic Nanoparticles

Argonne intern Francesca Gambacorta from University of Illinois at Urbana–Champaign worked with Argonne mentor Phil Laible and Postdoctoral mentor Martyna Michalska to study how black silicon, a synthetic nanomaterial, kills bacteria. This research will help scientists predict other applications of this material in the biomedical field. Argonne aims to develop the next generation of scientists, researchers, and engineers by mentoring over 300 undergraduate and graduate students a year from over 40 STEM majors in over 15 different career development programs. Students come from over 160 colleges and universities in 41 states and 15 countries.

60 APPLIED LIFE SCIENCES↗
NASA NTRS1980

Annealing radiation damaged silicon solar cells with a copper halide laser

The use of a multiply pulsed copper halide laser to significantly anneal out the damage to silicon solar cells caused by a simulated space radiation environment is investigated. Preliminary experiments demonstrate that the amount of damage can be decreased by 41% as measured by the maximum power generated.

Pivirotto, T. J.↗
DOE OSTI2020

Isolating p- and n-Doped Fingers With Intrinsic Poly-Si in Passivated Interdigitated Back Contact Silicon Solar Cells

Polycrystalline silicon on silicon oxide (poly-Si/SiO x ) passivating contacts enable ultra high efficiency interdigitated back contact silicon solar cells. To prevent shunt between n- and p-type doped fingers, an insulating region is required between them. We evaluate the use of intrinsic poly Si for this isolation region. Interdigitated fingers were formed by plasma deposition of doped hydrogenated amorphous silicon through mechanically aligned shadow masks, on top of a full-area intrinsic amorphous silicon layer. High temperature annealing then crystallized the a-Si:H to poly Si and drove in the dopants. Two mechanisms were identified which cause contamination of the intrinsic poly Si gap during processing. During deposition of doped fingers, we show using secondary ion mass spectrometry and conductivity measurements that the intrinsic gap becomes contaminated by doped a-Si:H tails several nanometers thick to concentrations of ~10 20 cm -3 . Another source of contamination occurs during high-temperature annealing, where dopants desorb from doped regions and readsorb onto intrinsic a Si:H. Both pathways reduce the resistivity of the intrinsic gap from ~10 5 Ω·cm to ~10 -1 Ω·cm. We show that plasma etching of the a-Si:H surface before crystallizing with a capping layer can eliminate the contamination of the intrinsic poly-Si, maintaining a resistivity of ~10 5 Ω·cm. Lastly, this demonstrates masked plasma deposition as a dopant patterning method for Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2016

Numerical simulation of systems of shear bands in ductile metal with inclusions

We develop a method for numerical simulations of high strain-rate loading of mesoscale samples of ductile metal with inclusions. Because of its small-scale inhomogeneity, the composite material is prone to localized shear deformation (adiabatic shear bands). This method employs the Generalized Method of Cells of Paley and Aboudi [Mech. Materials, vol. 14, pp. 127–139, 1992] to ensure that the micro mechanical behavior of the metal and inclusions is reflected properly in the behavior of the composite at the mesoscale. To find the effective plastic strain rate when shear bands are present, we extend and apply the analytic and numerical analysis of shear bands of Glimm, Plohr, and Sharp [Mech. Materials, vol. 24, pp. 31–41, 1996]. Our tests of the method focus on the stress/strain response in uniaxial-strain flow, both compressive and tensile, of depleted uranium metal containing silicon carbide inclusions. We use the Preston-Tonks-Wallace viscoplasticity model [J. Appl. Phys., vol. 93, pp. 211–220, 2003], which applies to the high strain-rate regime of an isotropic viscoplastic solid. In results, we verify the elevated temperature and thermal softening at shear bands in our simulations of pure DU and DU/SiC composites. We also note that in composites, due the asymmetry caused by the inclusions, shear band form at different times in different subcells. In particular, in the subcells near inclusions, shear band form much earlier than they do in pure DU.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effect of Dopant Compensation on the Conductivity of the Intrinsic poly-Si Isolation Region in Passivated IBC Silicon Solar Cells

The performance of IBC solar cells depends on the ability of this region to electrically isolate the doped fingers so that shunting does not occur and reduce the cell fill factor. We report on simulations which model the region between the p- and n-type poly-Si fingers of interdigitated back contact (IBC) solar cells as a series of resistors extending from one doped finger to the other. We demonstrate that the existence of a well compensated region between the doped fingers is enough to prevent shunting and loss of cell performance, despite contamination of dopants from the opposing dopant fingers. We show through these simulations that a net doping concentration below ~1018 cm-3 will enable a high resistivity and identify the conditions under which this highly resistive region forms despite imperfect finger edges. Additionally, we apply this analysis to tails measured by time-of-flight secondary ion mass spectrometry and confirm this hypothesis for our experimentally measured tails.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing

We fabricate suspended single-mode optical waveguides and ring resonators in 3C silicon carbide (SiC) that operate at telecommunication wavelength, and leverage post-fabrication thermal annealing to minimize optical propagation losses. Annealed optical resonators yield quality factors of over 41,000, which corresponds to a propagation loss of 7 dB/cm, and is a significant improvement over the 24 dB/cm in the case of the non-annealed chip. This improvement is attributed to the enhancement of SiC crystallinity and a significant reduction of waveguide surface roughness, from 2.4 nm to below 1.7 nm. The latter is attributed to surface layer oxide growth during the annealing step. We confirm that the thermo-optic coefficient, an important parameter governing high-power and temperature-dependent performance of SiC, does not vary with annealing and is comparable to that of bulk SiC. Our annealing-based approach, which is especially suitable for suspended structures, offers a straightforward way to realize high-performance 3C-SiC integrated circuits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1987

Dynamic and static fatigue behavior of sintered silicon nitrides

The dynamic and static fatigue behavior of Kyocera SN220M sintered silicon nitride at 1000 C was studied. Fractographic analysis of the material failing in dynamic fatigue revealed the presence of slow crack growth (SCG) at stressing rates below 41 MPa/min. Under conditions of static fatigue this material also displayed SCG at stresses below 345 MPa. SCG appears to be controlled by microcracking of the grain boundaries. The crack velocity exponent (n) determined from both dynamic and static fatigue tests ranged from 11 to 16.

Chang, J.↗
DOE OSTI2021

Employing Fracture Statistics to Track Cell Reliability Through Module Fabrication

In this work we demonstrate how fracture statistics may be employed to track cell reliability through module fabrication steps. We were able to detect how cell cutting equipment could reduce cell fracture strain by 25 % as well as increase its variability. A smaller reduction was found to result from the ribbon soldering operation, and all cells measured were weaker when strained in an orientation perpendicular to the gridlines. Cell fracture measurements were found to be consistent with the number of cracked cells experienced in full sized modules exposed to mechanical loading. A structural mechanics model was created to elucidate how the requisite fracture strain is developed in a cell encapsulated within a PV module and demonstrates that this strain decreases more than 50 % from its center to edge when placed within the inner loading span of four-point flexure. The associated implications on the apparent cell strength is examined with an effective volume treatment.

41 EE - Solar Energy Technologies Office (EE-4S)↗