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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Effects of organic silicon compounds on syngas auto-ignition behavior

Siloxanes are a significant impurity in syngas feedstocks and an important source of silicon in combustion synthesis applications. However, little is known regarding the fundamental combustion chemistry of siloxane compounds. The impact of two organic silicon species with different but related chemical structures, trimethylsilanol (TMSO) and hexamethyldisiloxane (HMDSO), on syngas auto-ignition behavior was investigated in this study using physical and computational experiments. A rapid compression facility (RCF) was used to create temperatures of 1010–1070 K and pressures of 8–10.3 atm for auto-ignition experiments. Experiments with trace concentrations of TMSO (100 ppm, mole basis) or HMDSO (100 ppm) were added to a surrogate syngas blend (CO and H 2 with a molar ratio of 2.34:1, air levels of dilution, with molar equivalence ratios of Φ = 0.1). The measured ignition delay times showed both siloxane species promote ignition behavior with TMSO yielding faster ignition delay times by approximately 37% and HMDSO yielding faster times by approximately 50% compared with the reference syngas mixture which contained no siloxanes. A computational study was conducted to interpret the results of the ignition experiments. Due to the fact that detailed chemistry does not exist for these organo-silicon compounds, the effects of the addition of CH 3 , H, and OH radicals to H 2 and CO mixtures were explored to simulate the potential rapid decomposition of the siloxanes in the H 2 and CO system. Addition of the radicals decreased the predicted ignition delay times when compared with the H 2 and CO mixture simulations without the radical species, but the simulations did not fully capture the behavior observed in the experiments, indicating the siloxane chemistry is more complex than providing a rapid source of radicals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Lewis Acidity of Bis(perfluorocatecholato)silane: Aldehyde Hydrosilylation Catalyzed by a Neutral Silicon Compound

Bis(perfluorocatecholato)silane Si(cat( F ) 2 was prepared, and stoichiometric binding to Lewis bases was demonstrated with fluoride, triethylphosphine oxide, and N,N'-diisopropylbenzamide. The potent Lewis acidity of Si(cat( F ) 2 was suggested from catalytic hydrosilylation and silylcyanation reactions with aldehydes. Mechanistic studies of hydrosilylation using an optically active silane substrate, R-(+)-methyl-(1-naphthyl)phenylsilane, proceeded with predominant stereochemical retention at silicon, consistent with a carbonyl activation pathway. The enantiospecificity was dependent on solvent and salt effects, with increasing solvent polarity or addition of NBu 4 BAr( F ) 4 leading to a diminished enantiomeric ratio. The medium effects are consistent with an ionic mechanism, wherein hydride transfer occurs prior to silicon-oxygen bond formation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF{sub 4} + 20%CO{sub 2}

A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO{sub 2} and a 60%Ar + 30%CO{sub 2} + 10%СF{sub 4} working mixture was stimulated by a {sup 90}Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF{sub 4} + 20%CO{sub 2} gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO{sub 2} compounds was obtained.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Soft chemical synthesis of silicon nanosheets and their applications

Two-dimensional silicon nanomaterials are expected to show different properties from those of bulk silicon materials by virtue of surface functionalization and quantum size effects. Since facile fabrication processes of large area silicon nanosheets (SiNSs) are required for practical applications, a development of soft chemical synthesis route without using conventional vacuum processes is a challenging issue. We have recently succeeded to prepare SiNSs with sub-nanometer thicknesses by exfoliating layered silicon compounds, and they are found to be composed of crystalline single-atom-thick silicon layers. In this review, we present the synthesis and modification methods of SiNSs. These SiNSs have atomically flat and smooth surfaces due to dense coverage of organic moieties, and they are easily self-assembled in a concentrated state to form a regularly stacked structure. We have also characterized the electron transport properties and the electronic structures of SiNSs. Finally, the potential applications of these SiNSs and organic modified SiNSs are also reviewed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A large polarization in Ce-modified bismuth ferrite thin films

Bi{sub 0.95}Ce{sub 0.05}FeO{sub 3} (BCFO) thin films were grown on SrRuO{sub 3}/TiO{sub 2}/SiO{sub 2}/Si(100) substrates via radio frequency sputtering. The BCFO thin film has a (111) orientation with a high phase purity. Improved dielectric behavior is observed for the BCFO thin film as compared with that of pure bismuth ferrite thin film. A large remanent polarization of 2P{sub r} {approx} 183.9 {mu}C/cm{sup 2} is induced in the BCFO thin film, owing to the (111) orientation and the introduction of Ce. The local phase decomposition induced by larger depolarization fields and the oxygen vacancies dominates the fatigue resistance of the BCFO thin film.

36 MATERIALS SCIENCE↗

FORMATION OF DUST IN THE EJECTA OF TYPE Ia SUPERNOVAE

We investigate the formation of dust grains in the ejecta of Type Ia supernovae (SNe Ia), adopting the carbon-deflagration W7 model. In the calculations of dust formation, we apply the nucleation and grain growth theory and consider the two extreme cases of the formation of CO and SiO molecules: complete formation and no formation. The results of the calculations show that for the sticking probability of {alpha}{sub j} = 1, C, silicate, Si, and FeS grains can condense at early times of {approx}100-300 days after the explosion, whereas Fe and SiC grains cannot form substantially. Due to the low gas density in SNe Ia with no H-envelope, the average radii of the newly formed grains are generally below 0.01 {mu}m, being much smaller than those in Type II-P SNe. This supports our previous conclusion that the radius of dust formed in the ejecta is smaller in SNe with less massive envelopes. The total dust mass ranges from 3 x 10{sup -4} M{sub sun} to 0.2 M{sub sun} for {alpha}{sub j} = 0.1-1, depending on whether or not CO and SiO molecules are formed. We also estimate the optical depths and thermal emission by the newly formed dust and compare them to the relevant observations of SNe Ia. We find that the formation of C grains in SNe Ia must be suppressed to be consistent with observational constraints. This implies that energetic photons and electrons heavily depress the formation efficiency of C grains or that the outermost C-O layer of SNe Ia is almost fully burned. Finally, we calculate dust destruction in the SN remnants and find that dust grains formed in the ejecta of SNe Ia are almost completely destroyed in the shocked gas before being injected into the interstellar medium. This indicates that SNe Ia are unlikely to be the major sources of interstellar dust.

79 ASTRONOMY AND ASTROPHYSICS↗

Materials Chemistry and Performance of Silicone-Based Replicating Compounds.

Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.

Brumbach, Michael T.↗

A Comprehensive Evaluation of the Performance and Materials Chemistry of a Sililcone-Based Replicating Compound

The objective of this project was to characterize the performance and chemistry of a siliconebased replicating compound. Some silicone replicating compounds are useful for critical inspection of surface features. Common applications are for examining micro-cracks, surface pitting, scratching, and other surface defects. Materials characterization techniques were used: FTIR, XPS, ToF-SIMS, AFM, and Confocal Microscopy to evaluate the replicating compound. These techniques allowed for the characterization and verification of the resolution capabilities and surface contamination that may be a result of using the compound. FTIR showed the compound is entirely made from silicone constituents. The AFM and Confocal Microscopy results showed the compound does accurately replicate the surface features to the claimed resolution. XPS and ToF-SIMS showed there is a silicone contaminant layer left behind when a cured replica is peeled off a surface. Attempts to clean off the contamination could not completely remove all silicone residues.

36 MATERIALS SCIENCE↗

Tribological Properties of Cr(Si)CN Coatings Sliding Against Different Mating Balls in Water

Chromium carbon nitride coatings have potential industrial applications in aqueous environments due to their good tribological properties and corrosion resistance. In order to reveal the effect of silicon doping on the tribological properties of CrCN coating, the tribological properties of Cr(Si)CN coatings sliding against potential sliding partners (Si{sub 3}N{sub 4}, Al{sub 2}O{sub 3} and SUS440C balls) in water were discussed. The results showed that the coefficient of friction (COF) for different partners could be arranged as μ{sub Al2O3} < μ{sub Si3N4} < μ{sub SUS440C} regardless of coatings. This result was determined by the tribochemical reaction, oxidation resistance and contact pressures of tribopairs. After the incorporation of Si element, the friction behavior of CrCN coating was improved due to the friction-induced hydration of amorphous silicon compound phase as sliding against Si{sub 3}N{sub 4} and SUS440C balls.

36 MATERIALS SCIENCE↗

Synthesis of high efficient Ca{sub 2}SiO{sub 4}:Eu{sup 2+} green emitting phosphor by a liquid phase precursor method

Green emitting Eu{sup 2+}-doped Ca{sub 2}SiO{sub 4} phosphors were synthesized by three different methods (a conventional solid state reaction (SSR) method, a novel liquid phase precursor approach using SiO{sub 2} sol (LPP-SiO{sub 2}(sol)) and water-soluble silicon compound (LPP-WSS)). The obtained phosphors exhibited a broad excitation spectrum ranging from 225 to 450 nm and a strong green emission peak at 502 nm due to the 4f{sup 6}5d{sup 1}{yields}4f{sup 7}({sup 8}S{sub 7/2}) transition of Eu{sup 2+}. The highest luminescent intensity was obtained for the samples fired at 1100 Degree-Sign C. The dependence of luminescence properties on Eu{sup 2+} concentration for the phosphors synthesized using LPP-WSS method was also examined from 0.1 to 5.0 mol% and the maximum emission intensity was observed at 3.0 mol% Eu{sup 2+}. A detailed analysis using various characterizations revealed that phosphors produced by the LPP-WSS process exhibited more homogenous phase distribution and higher luminescence intensity than those from the other two processes, which suggested the potential application of Ca{sub 2}SiO{sub 4}:Eu{sup 2+} in white light-emitting diodes and fluorescence lamps. - Graphical abstract: The synthesis of Eu{sup 2+} doped Ca{sub 2}SiO{sub 4} green emitting phosphors were carried out using LPP-SiO{sub 2}(sol), LPP-WSS and SSR methods. The adequate reaction of starting materials base on solution mixing and cellulose impregnating during LPP-WSS procedure resulted in single crystalline structure as well as fine morphology, and finally determined a superior luminescent intensity. Highlights: Black-Right-Pointing-Pointer Ca{sub 2}SiO{sub 4}:Eu{sup 2+} phosphor was synthesized by three methods (SSR, LPP-SiO{sub 2} and LPP-WSS). Black-Right-Pointing-Pointer Effect of different processes on the property of phosphor was studied. Black-Right-Pointing-Pointer Phosphor produced by LPP-WSS showed better homogenous phase and fluorescent property. Black-Right-Pointing-Pointer LPP-WSS approach was identified as the best method among these three approaches.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Composition and Properties of Deposits Formed on the Internal Surface of Oil Pipelines

The composition and physicochemical properties of oil deposits formed in pipelines during the transport of oil from Azerbaijani fields were studied by atomic absorption, chromatography-mass spectrometry, gamma spectrometry, and scanning electron microscopy methods. Up to 20% of the deposits were shown to be composed of paraffins, tars, and other heavy oil fractions, while asphaltenes and mechanical impurities (iron, sulfur, manganese, calcium, and silicon compounds) comprise about 80%. The contents of polycyclic aromatic hydrocarbons and radionuclides are within permissible levels, while the content of some heavy metals exceeds the permissible level by a factor of 1000. These data should be used in the management of waste products in petroleum pipelines.

36 MATERIALS SCIENCE↗

Ab Initio Calculations of New Full Heusler Alloys Rh{sub 2}ZrX (X = Al, Ga, In, Si, Ge, Sn)

In recent years, Heusler alloys have attracted extensive attention because of their usefulness in spintronic devices. In this paper, the structural, electronic, and magnetic properties of full Heusler alloys Rh{sub 2}ZrX (X = Al, Ga, In, Si, Ge, Sn) have been studied using Quantum Espresso software package based on density functional theory. Calculations have been done by GGA and GGA+U methods. The investigations on the structural properties of the alloys showed that the Rh{sub 2}ZrSi alloy had the most stable structure (E{sub coh} = − 1.807 eV) among the six compounds reviewed. The results of GGA calculation on electronic properties of Rh{sub 2}ZrX alloys show that while the Rh{sub 2}ZrX (X = Al, Ga, In) alloys had metallic nature due to overlapping between conduction and valance band at Fermi level for both spin directions, the Rh{sub 2}ZrX (X = Si, Ge, Sn) alloys had half-metal characteristic. Also, Rh{sub 2}ZrSi and Rh{sub 2}ZrGe alloys had 100% spin polarization. By studying the magnetic properties, it was found that the Rh{sub 2}ZrAl and Rh{sub 2}ZrSi alloys were antiferromagnetic, while the Rh{sub 2}ZrGa, Rh{sub 2}ZrIn, Rh{sub 2}ZrGe, and Rh{sub 2}ZrSn alloys were ferromagnetic materials. Also, the total spin magnetic moment of alloys was found in accordance with the Slater-Pauling rule. The results obtained using GGA+U calculation are slightly different from the results of GGA calculation.

36 MATERIALS SCIENCE↗

Characteristics of Magnetization Reversal of Magnetostatically Coupled Microwire-Based System

The magnetization reversal process of a system consisted of one Co{sub 67}Fe{sub 3.9}Ni{sub 1.5}B{sub 12.5}Si{sub 14.5}Mo{sub 0.6} and one Fe{sub 74}B{sub 13}Si{sub 11}C{sub 2} microwires was studied. The change of the magnetic characteristics of a system (slope and shape of the hysteresis loop, coercive force) under effect of the neighbor and the length of the system (in the range of 3–20 mm) was considered and analyzed in terms of effective demagnetizing field influence.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Radiation Resistance of Nanomodified Organosilicic Enamel

The paper studies the absorption spectrum and the integrated absorption coefficient of organosilicic KO-859 enamel samples modified by silicon dioxide nanoparticles and exposed to solar radiation. It is shown that nanomodification improves the radiation resistance of thermal control coatings and provides stability of their optical properties.

14 SOLAR ENERGY↗

Hydrogenation studies on NdScSi and NdScGe

NdScSi and NdScGe were synthesized from the elements via arc-melting and subsequent annealing. Their ordered La{sub 2}Sb type structures, with space group I4/mmm, were refined from single crystal X-ray diffractometer data: a=428.94(6) and b=1570.5(3) pm, wR2=0.0395, 309 F{sup 2} values for NdScSi and a=431.2(1) and c=1581.3(5) pm, wR2=0.1220, 227 F{sup 2} values for NdScGe, with 11 variables per refinement. Hydrogen insertion was performed on both Nd-based intermetallics by solid/gas reaction. Hydrogen uptake keeps the pristine compound space group but yields an anisotropic expansion of the unit cell with a large increase of c (≈+7%) and a slight decrease of a (≈−1.7%) parameters. Hydrogen absorption at 350 °C and under 5 bar of H{sub 2} pressure shows that the hydride NdScSiH{sub 1.48(5)} is formed. An in-situ neutron diffraction study during the deuteration of NdScSi reveals for the first time in a CeScSi-type compound, the possibility to fill two interstitial sites with deuterium atoms, leading to the composition NdScSiD{sub 1.5} for the deuteride adopting then the La{sub 2}Fe{sub 2}Se{sub 2}O{sub 3}-type structure. From magnetization measurements, we evidence that hydrogenation strongly reduces the Curie temperature of NdScSi (T{sub C}=175 K) and NdScGe (T{sub C}=194 K) since NdScSiH{sub 1.5} and NdScGeH{sub x} undergo a magnetic transition at 4 K and around 2 K, respectively. - Highlights: • Crystal structures of NdScSi and NdScGe were refined from single crystal XRD data. • The hydrogenation of NdScSi leads to the formation of the NdScSiH{sub 1.5} hydride. • NdScSiD{sub 1.5} adopts the La{sub 2}Fe{sub 2}Se{sub 2}O{sub 3}-type structure. • Hydrogenation strongly reduces the ordering temperature of both intermetallics.

36 MATERIALS SCIENCE↗

Effects of Nb and Ta additions on the strength and coarsening resistance of precipitation-strengthened Al-Zr-Sc-Er-Si alloys

Highlights: • Nb and Ta micro-additions are made to a dilute Al-Er-Sc-Zr-Si alloys. • Zr-enriched primary L1{sub 2} precipitates form on solidification. • Secondary L1{sub 2} precipitates form on aging, and show improved coarsening resistance. • Nb and Ta are enriched at the secondary nanoprecipitate/matrix interface. • Micro-additions of Nb and Ta have similar effects as V, previously studied. - Abstract: A dilute Al-0.07Zr-0.02Sc-0.005Er-0.06Si (at.%) alloy was microalloyed with 0.08 at.% Nb or Ta. Atom-probe tomography reveals that, upon aging, Nb and Ta partition to the coherent L1{sub 2}-Al{sub 3}(Zr,Sc,Er) nanoprecipitates (with average concentrations of 0.2 and 0.08 at.%, respectively), with both segregating at the matrix/nanoprecipitate heterophase interface. This is consistent with the Nb- and Ta-modified alloys exhibiting, as compared to the unmodified alloy: (i) higher peak microhardness, from a higher nanoprecipitate volume fraction and/or lattice parameter mismatch; and (ii) improved aging resistance, from slower nanoprecipitate coarsening due to the small diffusivities of niobium and tantalum in aluminum. Analogous results were previously reported for a V-modified alloy.

36 MATERIALS SCIENCE↗

Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications

Current-voltage characteristic for a Ge-incorporated Si oxide was investigated. Current enhancement was observed for the electric field larger than 10 MV/cm. Such a current enhancement only under high electric field is expected to improve programming performance without deteriorating reading performance. From secondary ion mass spectrometry and hard x-ray photoelectron spectroscopy analyses and current simulation, it is concluded that the Ge impurity in Ge{sup 4+} state around the tunnel oxide/substrate interface enhances the current by trap-assisted tunneling. The programming current enhancement induced by the Ge incorporation is expected to be one of the promising solutions for the next-generation flash memory.

36 MATERIALS SCIENCE↗

Investigation of plasma-doped fin structure and characterization of dopants by atom probe tomography

As and P dopants in a plasma-doped Si-based fin structure were analyzed using atom probe tomography. The distributions and concentrations of As and P atoms in various regions of the fin structure and the oxidation levels for different dopants were determined. Most dopants were segregated at the fin boundary, and the As and P concentrations exceeded 9 Multiplication-Sign 10{sup 20} atoms/cm{sup 3} and 2 Multiplication-Sign 10{sup 20} atoms/cm{sup 3}, respectively. The atomic oxygen and SiO{sub 2} concentrations depended on the dopant type. The larger and heavier As dopant severely damaged the surface of the fin structure and could cause more severe oxidation.

36 MATERIALS SCIENCE↗