Dosimetry of proton beams using small silicon diodes.
Small silicon diodes to explore depth-dose distributions in water phantom of proton beams
Koehler, A. M.↗
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Dosimetry of proton beams using small silicon diodes.
Use of small silicon diodes as radiation dosimeters in proton beams
SILICON JUNCTIONS↗
SU-F-J-184: Proton Computed Tomography Using 1D Silicon Diode Array
Purpose: Proton radiography and proton computed tomography (PCT) can be used to measure proton stopping power directly. However, practical and cost effective proton imaging detectors are not widely available. In this study, the authors investigated the feasibility of proton imaging using a silicon diode array. Methods: A one-dimensional silicon-diode detector array (1DSDA) was aligned with the central axis (CAX) of the proton beam. Polymethyl methacrylate (PMMA) slabs were used to find the correspondence between the water equivalent thickness (WET) and 1DSDA channel number. 2D proton radiographs (PR) were obtained by translation and rotation of a phantom relative to CAX while the proton nozzle and 1DSDA were kept stationary. A PCT image of one slice of the phantom was reconstructed using filtered backprojection. Results: PR and PCT images of the PMMA cube were successfully acquired using the 1DSDA. The WET of the phantom was measured using PR data with an accuracy of 4.2% or better. Structures down to 1 mm in size could be resolved. Reconstruction of a PCT image showed very good agreement with simulation. Limitations in spatial resolution are attributed to limited spatial sampling, beam collimation, and proton scatter. Conclusion: The results demonstrate the feasibility of using silicon diode arrays for proton imaging. Such a device can potentially offer fast image acquisition, high spatial and energy resolution for PR and PCT.
60 APPLIED LIFE SCIENCES↗
Thermal (Silicon Diode) Data Acquisition Systems
Marshall Space Flight Center s X-ray Cryogenic Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.
Wright, Ernest↗
Thermal (Silicon Diode) Data Acquisition System
Marshall Space Flight Center's X-ray Calibration Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.
Kegley, Jeffrey↗
Using silicon diodes for detecting the liquid-vapor interface in hydrogen
Tests were performed using commercially available silicon diode temperature sensors to detect the location of the liquid-vapor interface in hydrogen during ground test programs. Results show that by increasing the current into the sensor, silicon diodes can be used as liquid level point sensors. After cycling the sensors from liquid to vapor several times, it was found that with a 30 mA (milliamps) input current, the sensors respond within 2 seconds by measuring a large voltage difference when transitioning from liquid to vapor across the interface. Nearly instantaneous response resulted during a transition form vapor to liquid. Detailed here are test procedures, experimental results, and guidelines for applying this information to other test facilities.
Dempsey, Paula J.↗
Using silicon diodes for detecting the liquid-vapor interface in hydrogen
Tests were performed using commercially available silicon diode temperature sensors to detect the location of the liquid-vapor interface in hydrogen during ground test programs. Results show that by increasing the current into the sensor, silicon diodes can be used as liquid level point sensors. After cycling the sensors from liquid to vapor several times, it was found that with a 30 mA (milliamps) input current, the sensors respond within 2 seconds by measuring a large voltage difference when transitioning from liquid to vapor across the interface. Nearly instantaneous response resulted during a transition from vapor to liquid. Detailed here are test procedures, experimental results, and guidelines for applying this information to other test facilities.
Dempsey, Paula J.↗
Thermal sensing of cryogenic wind tunnel model surfaces Evaluation of silicon diodes
Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.
Daryabeigi, K.↗
Thermal sensing of cryogenic wind tunnel model surfaces - Evaluation of silicon diodes
Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.
Daryabeigi, Kamran↗
Mechanisms of Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Single Event Transients in an Epitaxial Silicon Diode
Heavy ion-, focused X ray-, and pulsed laser induced single event effects in an epitaxial silicon diode were simulated using Sentaurus Technology Computer Aided Design (TCAD). The variation of the potential with time in simulation agrees with previous experimental data, which suggests that the different radiation sources result in different amounts of potential modulation. The charge generation spatial profile strongly affects the potential modulation. The longitudinal range and starting location of generated charge most strongly impacts the amount of potential modulation, while the radial width has a slight effect, and the temporal duration of charge injection has negligible impact on potential modulation
Kaitlyn L. Ryder↗
Fast recovery, high voltage silicon diodes for AC motor controllers
The fabrication and characterization of a high voltage, high current, fast recovery silicon diode for use in AC motor controllers, originally developed for NASA for use in avionics power supplies, is presented. The diode utilizes a positive bevel PIN mesa structure with glass passivation and has the following characteristics: peak inverse voltage - 1200 volts, forward voltage at 50 amperes - 1.5 volts, reverse recovery time of 200 nanoseconds. Characterization data for the diode, included in a table, show agreement with design concepts developed for power diodes. Circuit diagrams of the diode are also given.
Balodis, V.↗
Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode
Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response.
Heavy ions↗
Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode
Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response for these relatively large devices.
Focused X-ray↗
Comparison of Sensitive Volumes Associated with Ion-and Laser-Induced Charge Collection in an Epitaxial Silicon Diode
A sensitive volume is developed using pulsed laser-induced collected charge for two bias conditions in an epitaxial silicon diode. These sensitive volumes show good agreement with experimental two photon absorption laser-induced collected charge at a variety of focal positions and pulse energies. When compared to ion-induced collected charge, the laser-based sensitive volume over predicts the experimental collected charge at low bias and agrees at high bias. Here, a sensitive volume based on ion-induced collected charge adequately describes the ion experimental results at both biases. Differences in the amount of potential modulation explain the differences between the ion-and laser-based sensitive volumes at the lower bias. Truncation of potential modulation by the highly doped substrate at the higher bias results in similar sensitive volumes.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
A theoretical analysis of steady-state photocurrents in simple silicon diodes.
A theoretical analysis solves for the steady-state photocurrents produced by a given photogeneration rate function with negligible recombination in simple silicon diodes, consisting of a uniformly doped quasi-neutral region (called "substrate" below) between a p-n junction depletion region (DR) and an ohmic contact (electrode). Special attention is given to conditions that produce "funneling" (a term used by the single-event-effects community) under steady-state conditions. Funneling occurs when carriers are generated so fast that the DR becomes flooded and partially or completely collapses. Some or nearly all of the applied voltage plus built-in potential normally across the DR is now across the substrate. This substrate voltage drop affects substrate currents. The steady-state problem can provide some qualitative insights into the more difficult transient problem. Chapter 6 discusses some similarities between the steady-state and transient problems...
Edmonds, Larry↗
A theoretical analysis of steady-state photocurrents in simple silicon diodes
A theoretical analysis solves for the steady-state photocurrents produced by a given photo-generation rate function with negligible recombination in simple silicon diodes, consisting of a uniformly doped quasi-neutral region (called 'substrate' below) adjacent to a p-n junction depletion region (DR). Special attention is given to conditions that produce 'funneling' (a term used by the single-eventeffects community) under steady-state conditions. Funneling occurs when carriers are generated so fast that the DR becomes flooded and partially or completely collapses. Some or nearly all of the applied voltage, plus built-in potential normally across the DR, is now across the substrate. This substrate voltage drop affects substrate currents. The steady-state problem can provide some qualitative insights into the more difficult transient problem. First, it was found that funneling can be induced from a distance, i.e., from carriers generated at locations outside of the DR. Secondly, it was found that the substrate can divide into two subregions, with one controlling substrate resistance and the other characterized by ambipolar diffusion. Finally, funneling was found to be more difficult to induce in the p(sup +)/n diode than in the n(sup +)/p diode. The carrier density exceeding the doping density in the substrate and at the DR boundary is not a sufficient condition to collapse a DR.
Edmonds, L.↗
Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
Heavy ion, focused x-ray, and pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. It is observed that these transient shape characteristics depend on the source (ion, x-ray, or laser), even when similar amounts of charge are generated. Finally, the observed differences are examined and explained in terms of basic charge collection mechanisms.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
Heavy ion, focused X-ray, pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. The transient shape characteristics depend on the source (ion, X-ray, or laser), even when similar amounts of charge are generated. The observed differences are examined and explained in terms of basic charge collection mechanisms.
Heavy ions↗