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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

SU-F-J-184: Proton Computed Tomography Using 1D Silicon Diode Array

Purpose: Proton radiography and proton computed tomography (PCT) can be used to measure proton stopping power directly. However, practical and cost effective proton imaging detectors are not widely available. In this study, the authors investigated the feasibility of proton imaging using a silicon diode array. Methods: A one-dimensional silicon-diode detector array (1DSDA) was aligned with the central axis (CAX) of the proton beam. Polymethyl methacrylate (PMMA) slabs were used to find the correspondence between the water equivalent thickness (WET) and 1DSDA channel number. 2D proton radiographs (PR) were obtained by translation and rotation of a phantom relative to CAX while the proton nozzle and 1DSDA were kept stationary. A PCT image of one slice of the phantom was reconstructed using filtered backprojection. Results: PR and PCT images of the PMMA cube were successfully acquired using the 1DSDA. The WET of the phantom was measured using PR data with an accuracy of 4.2% or better. Structures down to 1 mm in size could be resolved. Reconstruction of a PCT image showed very good agreement with simulation. Limitations in spatial resolution are attributed to limited spatial sampling, beam collimation, and proton scatter. Conclusion: The results demonstrate the feasibility of using silicon diode arrays for proton imaging. Such a device can potentially offer fast image acquisition, high spatial and energy resolution for PR and PCT.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

Monte Carlo simulation of the dose response of a novel 2D silicon diode array for use in hybrid MRI–LINAC systems

Purpose: MRI-guided radiation therapy systems (MRIgRT) are being developed to improve online imaging during treatment delivery. At present, the operation of single point dosimeters and an ionization chamber array have been characterized in such systems. This work investigates a novel 2D diode array, named “magic plate,” for both single point calibration and 2D positional performance, the latter being a key element of modern radiotherapy techniques that will be delivered by these systems. Methods: GEANT4 Monte Carlo methods have been employed to study the dose response of a silicon diode array to 6 MV photon beams, in the presence of in-line and perpendicularly aligned uniform magnetic fields. The array consists of 121 silicon diodes (dimensions 1.5 × 1.5 × 0.38 mm{sup 3}) embedded in kapton substrate with 1 cm pitch, spanning a 10 × 10 cm{sup 2} area in total. A geometrically identical, water equivalent volume was simulated concurrently for comparison. The dose response of the silicon diode array was assessed for various photon beam field shapes and sizes, including an IMRT field, at 1 T. The dose response was further investigated at larger magnetic field strengths (1.5 and 3 T) for a 4 × 4 cm{sup 2} photon field size. Results: The magic plate diode array shows excellent correspondence (< ± 1%) to water dose in the in-line orientation, for all beam arrangements and magnetic field strengths investigated. The perpendicular orientation, however, exhibits a dose shift with respect to water at the high-dose-gradient beam edge of jaw-defined fields [maximum (4.3 ± 0.8)% over-response, maximum (1.8 ± 0.8)% under-response on opposing side for 1 T, uncertainty 1σ]. The trend is not evident in areas with in-field dose gradients typical of IMRT dose maps. Conclusions: A novel 121 pixel silicon diode array detector has been characterized by Monte Carlo simulation for its performance inside magnetic fields representative of current prototype and proposed MRI–linear accelerator systems. In the in-line orientation, the silicon dose is directly proportional to the water dose. In the perpendicular orientation, there is a shift in dose response relative to water in the highest dose gradient regions, at the edge of jaw-defined and single-segment MLC fields. The trend was not observed in-field for an IMRT beam. The array is expected to be a valuable tool in MRIgRT dosimetry.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2012

EVALUATION OF SILICON DIODES AS IN-SITU CRYOGENIC FIELD EMISSION DETECTORS FOR SRF CAVITY DEVELOPMENT

We performed in-situ cryogenic testing of four silicon diodes as possible candidates for field emission (FE) monitors of superconducting radio frequency (SRF) cavities during qualification testing and in accelerator cryo-modules. We evaluated diodes from 2 companies - from Hamamatsu corporation model S1223-01; and from OSI Optoelectronics models OSD35-LR-A, XUV-50C, and FIL-UV20. The measurements were done by placing the diodes in superfluid liquid helium near the top of a field emitting 9-cell cavity during its vertical test. For each diode, we will discuss their viability as a 2K cryogenic detector for FE mapping of SRF cavities and the directionality of S1223-01 in such environments. We will also present calibration curves between the diodes and JLab's standard radiation detector placed above the Dewar's top plate.

43 PARTICLE ACCELERATORS↗
DOE OSTI2019

Comparison of Sensitive Volumes Associated with Ion-and Laser-Induced Charge Collection in an Epitaxial Silicon Diode

A sensitive volume is developed using pulsed laser-induced collected charge for two bias conditions in an epitaxial silicon diode. These sensitive volumes show good agreement with experimental two photon absorption laser-induced collected charge at a variety of focal positions and pulse energies. When compared to ion-induced collected charge, the laser-based sensitive volume over predicts the experimental collected charge at low bias and agrees at high bias. Here, a sensitive volume based on ion-induced collected charge adequately describes the ion experimental results at both biases. Differences in the amount of potential modulation explain the differences between the ion-and laser-based sensitive volumes at the lower bias. Truncation of potential modulation by the highly doped substrate at the higher bias results in similar sensitive volumes.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Heavy ion, focused x-ray, and pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. It is observed that these transient shape characteristics depend on the source (ion, x-ray, or laser), even when similar amounts of charge are generated. Finally, the observed differences are examined and explained in terms of basic charge collection mechanisms.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2013

A comparative study of small field total scatter factors and dose profiles using plastic scintillation detectors and other stereotactic dosimeters: The case of the CyberKnife

Purpose: Small-field dosimetry is challenging, and the main limitations of most dosimeters are insufficient spatial resolution, water nonequivalence, and energy dependence. The purpose of this study was to compare plastic scintillation detectors (PSDs) to several commercial stereotactic dosimeters by measuring total scatter factors and dose profiles on a CyberKnife system. Methods: Two PSDs were developed, having sensitive volumes of 0.196 and 0.785 mm{sup 3}, and compared with other detectors. The spectral discrimination method was applied to subtract Cerenkov light from the signal. Both PSDs were compared to four commercial stereotactic dosimeters by measuring total scatter factors, namely, an IBA dosimetry stereotactic field diode (SFD), a PTW 60008 silicon diode, a PTW 60012 silicon diode, and a microLion. The measured total scatter factors were further compared with those of two independent Monte Carlo studies. For the dose profiles, two commercial detectors were used for the comparison, i.e., a PTW 60012 silicon diode and Gafchromics EBT2. Total scatter factors for a CyberKnife system were measured in circular fields with diameters from 5 to 60 mm. Dose profiles were measured for the 5- and 60-mm cones. The measurements were performed in a water tank at a 1.5-cm depth and an 80-cm source-axis distance. Results: The total scatter factors measured using all the detectors agreed within 1% with the Monte Carlo values for cones of 20 mm or greater in diameter. For cones of 10-20 mm in diameter, the PTW 60008 silicon diode was the only dosimeter whose measurements did not agree within 1% with the Monte Carlo values. For smaller fields (<10 mm), each dosimeter type showed different behaviors. The silicon diodes over-responded because of their water nonequivalence; the microLion and 1.0-mm PSD under-responded because of a volume-averaging effect; and the 0.5-mm PSD was the only detector within the uncertainties of the Monte Carlo simulations for all the cones. The PSDs, the PTW 60012 silicon diode, and the Gafchromics EBT2 agreed within 2% and 0.2 mm (gamma evaluation) for the measured dose profiles except in the tail of the 60-mm cone. Conclusions: Silicon diodes can be used to accurately measure small-field dose profiles but not to measure total scatter factors, whereas PSDs can be used to accurately measure both. The authors' measurements show that the use of a 1.0-mm PSD resulted in a negligible volume-averaging effect (under-response of Almost-Equal-To 1%) down to a field size of 5 mm. Therefore, PSDs are strong candidates to become reference radiosurgery detectors for beam characterization and quality assurance measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Electrical properties of silicon schottky diodes containing metal films of various compositions

Au{sub x}Ti{sub 100{sub -}} {sub x}/n-Si Schottky diodes are fabricated and studied; in addition, the electrical properties of diodes containing metal films with varying composition (x = 0, 14, 30, 38, 60, 80, and 100) are also studied. Using X-ray phase analysis, it is established that the film of Au{sub 38}Ti{sub 62} composition has the amorphous structure, while the remaining films Au{sub x}Ti{sub 100-x} possess the polycrystalline structure. The main parameters of the Schottky diodes are determined in relation to the composition and structure of the metal films. As a result, it is shown that the electrical properties of Au{sub x}Ti{sub 100-x}/n-Si Schottky diodes are related to variations in the composition and structure of metal films.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles

The radiation hardness of three types of commercial Schottky rectifier diodes based on silicon carbide (4H-SiC, base layer doping level (3–7) × 10{sup 15} cm{sup –3}) under electron (0.9 or 3.5 MeV electrons) and proton irradiation (15 MeV protons) is studied. The forward and reverse current–voltage characteristics of the diodes are monitored. In the initial state, the diodes have a breakdown voltage of 1–2 kV and an almost ideal forward current–voltage characteristic. It is found that the series resistance of the diodes is the most sensitive to radiation and governs the radiation hardness. This resistance grows by nearly 10 orders of magnitude and reaches a value of 10{sup 9} Ω at high doses. The threshold doses of electron irradiation fall within the range D{sub th} ≈ (0.5–2) × 10{sup 16} cm{sup –2} and depend on the electron energy and doping level of the base layer, and those of proton irradiation, D{sub th} ≈ 5 × 10{sup 13} cm{sup –2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Integrated silicon carbide diode rectifier circuits

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode. the circuit teaches an integrated diode rectification circuit for use with a two phase center tap transformer having a first voltage output, a second voltage output, and a center tap output with a single chip having a first half-wave rectifier connected to the first voltage output, a second half-wave rectifier connected to the second voltage output, and a floating substrate connection connected to the center tap output and an on chip first channel-to-substrate isolation diode electrically connected between the first half-wave rectifier and the floating substrate.

Barlow, Matthew↗
DOE OSTI2015

1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance R ON,SP (5.12 mΩ · cm 2 ), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/R ON,SP of 727 MW·cm 2 . The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

42 ENGINEERING↗
DOE OSTI2015

A new Recoil Proton Telescope for energy and fluence measurement of fast neutron fields

The spectrometer ATHENA (Accurate Telescope for High Energy Neutron metrology Applications), is being developed at the IRSN / LMDN (Institut de Radioprotection et de Surete nucleaire / Laboratoire de Metrologie et de dosimetrie des neutrons) and aims at characterizing energy and fluence of fast neutron fields. The detector is a Recoil Proton Telescope and measures neutron fields in the range of 5 to 20 MeV. This telescope is intended to become a primary standard for both energy and fluence measurements. The neutron detection is achieved by a polyethylene radiator for n-p conversion, three 50{sub m} thick silicon sensors that use CMOS technology for the proton tracking and a 3 mm thick silicon diode to measure the residual proton energy. This first prototype used CMOS sensors called MIMOSTAR, initially developed for heavy ion physics. The use of CMOS sensors and silicon diode increases the intrinsic efficiency of the detector by a factor of ten compared with conventional designs. The first prototype has already been done and was a successful study giving the results it offered in terms of energy and fluence measurements. For mono energetic beams going from 5 to 19 MeV, the telescope offered an energy resolution between 5 and 11% and fluence difference going from 5 to 7% compared to other home standards. A second and final prototype of the detector is being designed. It will hold upgraded CMOS sensors called FastPixN. These CMOS sensors are supposed to run 400 times faster than the older version and therefore give the telescope the ability to support neutron flux in the order of 107 to 108cm{sup 2}:s{sup 1}. The first prototypes results showed that a 50 m pixel size is enough for a precise scattering angle reconstruction. Simulations using MCNPX and GEANT4 are already in place for further improvements. A DeltaE diode will replace the third CMOS sensor and will be installed right before the silicon diode for a better recoil proton selection. The final prototype with its new geometry will increase the telescopes efficiency by a factor of 1.5. It will also cover some of the most important points in metrology; repeatability, reproducibility and sustainability. (authors)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

SU-E-T-506: Intercomparison Study On Small Field Output Factor Measurements

Purpose In radiotherapy, uncertainties due to small field measurements (SFM) introduce systematic errors to the treatment process and the development of new dosimeters for quality assurance programs is a challenge. In this work we analyze the behavior of seven detectors measuring output factors of 6MV photon beam. Methods The dosimeters employed are: a single cristal diamond detector (SCCD) developed at the University of Rome Tor Vergata, a silicon diode developed within the project MAESTRO, a IBA Razor silicon diode, A1SL and A26 Exradin ion chambers, an EBT3 Gafchromic film and the Exradin W1 Scintillator.Diamond sensitive volume is a cylinder 2.2mm in diameter and 1μm thick. MAESTRO diode is 2×2mm2 active area. Razor sensitive volume is a cylinder 0.6 mm in diameter and 0.02 mm thick. A16 and A1Sl have a collecting volume of 0,015cc and 0,053cc. The W1 is an optical fiber with an active volume of 0.002cc. All measurements were performed in a water phantom, with detector positioned at the isocenter (SSD=90cm, d=10cm), MAESTRO diode being sandwiched in solid water to obtain an equivalent experimental setup. Results These measurements are challenging due to the absence of charged particle equilibrium conditions, detector size and positioning problems. They are in good agreement among each other, especially GAF, Razor, W1 and SCDD. Maximum deviations reported are related to the field 0.8×0.8cm2 for MAESTRO and chambers data with respect to EBT3: around 15% (A1SLvsEBT3), 16% (MAESTROvsEBT3). Razor and W1 show a deviation around 3% with respect to SCDD. Conclusion In this work measurements made with a variety of detectors are compared. These study show the possibility to choose different detectors for SFM and that smaller ion chambers are still not competitive with solid state detectors. Silicon, diamond and optical fiber dosimeters show a similar behavior with minor discrepancies for the smallest field.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2014

Effects of electrostatic discharge on three cryogenic temperature sensor models

Cryogenic temperature sensors are not usually thought of as electrostatic discharge (ESD) sensitive devices. However, the most common cryogenic thermometers in use today are thermally sensitive diodes or resistors - both electronic devices in their base form. As such, they are sensitive to ESD at some level above which either catastrophic or latent damage can occur. Instituting an ESD program for safe handling and installation of the sensor is costly and it is desirable to balance the risk of ESD damage against this cost. However, this risk cannot be evaluated without specific knowledge of the ESD vulnerability of the devices in question. This work examines three types of cryogenic temperature sensors for ESD sensitivity - silicon diodes, Cernox(trade mark, serif) resistors, and wire wound platinum resistors, all manufactured by Lake Shore Cryotronics, Inc. Testing was performed per TIA/EIA FOTP129 (Human Body Model). Damage was found to occur in the silicon diode sensors at discharge levels of 1,500 V. For Cernox(trade mark, serif) temperature sensors, damage was observed at 3,500 V. The platinum temperature sensors were not damaged by ESD exposure levels of 9,900 V. At the lower damage limit, both the silicon diode and the Cernox(trade mark, serif) temperature sensors showed relatively small calibration shifts of 1 to 3 K at room temperature. The diode sensors were stable with time and thermal cycling, but the long term stability of the Cernox(trade mark, serif) sensors was degraded. Catastrophic failure occurred at higher levels of ESD exposure.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

This work is focusing on generation, time evolution, and impact on the electrical performance of silicon diodes impaired by radiation induced active defects. n-type silicon diodes had been irradiated with electrons ranging from 1.5 MeV to 27 MeV. It is shown that the formation of small clusters starts already after irradiation with high fluence of 1.5 MeV electrons. An increase of the introduction rates of both point defects and small clusters with increasing energy is seen, showing saturation for electron energies above ∼15 MeV. The changes in the leakage current at low irradiation fluence-values proved to be determined by the change in the configuration of the tri-vacancy (V{sub 3}). Similar to V{sub 3}, other cluster related defects are showing bistability indicating that they might be associated with larger vacancy clusters. The change of the space charge density with irradiation and with annealing time after irradiation is fully described by accounting for the radiation induced trapping centers. High resolution electron microscopy investigations correlated with the annealing experiments revealed changes in the spatial structure of the defects. Furthermore, it is shown that while the generation of point defects is well described by the classical Non Ionizing Energy Loss (NIEL), the formation of small defect clusters is better described by the “effective NIEL” using results from molecular dynamics simulations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗