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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Tunnel oxide passivating contact enabled by polysilicon on ultra-thin SiO 2 for advanced silicon radiation detectors

Conventional silicon junction detectors encounter significant carrier recombination within the heavily doped p⁺ and n⁺ layers, as well as beneath the metal contact regions, creating the so-called “dead layers”, especially on the detector side. In this study, we present the tunnel oxide passivating contact with doped polysilicon on oxide, which demonstrates exceptional surface passivation and carrier selectivity. The key innovation lies in an ultra-thin (~ 1.5 nm) interfacial oxide layer that facilitates efficient majority carrier transportation via tunneling while effectively block minority carriers. Remarkably low saturation current densities, ranging from 5 to 10 fA/cm² even with the metal contact, underscore the superiority of both n-type and p-type tunnel oxide passivating contacts. In contrast, conventional p–n junction or high-low junction exhibit saturation current densities ranging from 10 to 90 fA/cm² in the studied p⁺ and n⁺ layers with surface passivation schemes due to Auger recombination and surface recombination, and 1000–6000 fA/cm² with metal contacts due to intense metal-induced recombination at the interface. These findings indicate the potential and superiority of implementing n-type tunnel oxide passivating contact on the detector side and p-type contact on the back side for advanced silicon radiation detectors. This approach would enable thorough collection of generated charge carriers along the track of incident ionizing radiation particles, leading to improved energy resolution and reduced noise levels.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Simulations of Silicon Radiation Detectors for High Energy Physics Experiments

Silicon radiation detectors are an integral component of current and planned collider experiments in high energy physics. Simulations of these detectors are essential for deciding operational configurations, for performing precise data analysis, and for developing future detectors. In this white paper, we briefly review the existing tools and discuss challenges for the future that will require research and development to be able to cope with the foreseen extreme radiation environments of the High Luminosity runs of the Large Hadron Collider and future hadron colliders like FCC-hh and SPPC.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Preliminary benchmarks and analysis of boundary conditions in a trenched microstructured silicon radiation detector

Microstructured neutron detectors have the benefit of enhanced neutron detection efficiency as compared to planar devices, achieved by etching 6 LiF-filled trenches on the top surface of a silicon PIN diode. This sensor geometry results in a complex electric field distribution and depletion characteristics within the diode under reverse bias. For the first time on record, the effects of a fixed oxide charge on the microstructured device depletion characteristics and mobile carrier transport is investigated. Prototype detectors were fabricated with non-conformal surface doping. Capacitance voltage and current voltage measurements were performed for these prototypes and compared with COMSOL Multiphysics simulations. A spectral response from an 241Am alpha particle source was acquired and analyzed. It was found that monoenergetic alpha particles produce three prominent peaks in the pulse height spectrum output by the device. The peaks were confirmed by simulations to correlate with dead layers and incident trajectories into the microstructure. It was also found that significant differences in pulse rise time result, corresponding with events arriving in a low-field region in the fins and a high-field region in the bulk. Geant4 was utilized for radiation transport, interaction modeling, and benchmarking the spectral data. The results of this simulation work provide confidence in the ability to attain and benchmark electrical characteristics and spectral data for semiconductor radiation detectors employing complex microstructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Microstructured silicon radiation detector

A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors

Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.

Kenney, Christopher J.↗
DOE OSTI2022

Charge carrier motion and effect of fixed oxide charge in a microstructured silicon radiation detector

Signal formation in a microstructured semiconductor neutron detector is more complex than in planar diode geometry. Three-dimensional microstructures are laterally smaller than the ionization cloud length, and the electric fields may be weak enough to exhibit plasma time effects. This work is the first detailed treatment of charge carrier motion in these complex semiconductor devices to replicate the time profile and signal magnitude. Simulations were performed using COMSOL Multiphysics to investigate various parameters that affect the propagation of the charge cloud. It was observed that the size of the simulated three-dimensional structure had an impact on the induced current pulse, indicating the importance of simulation geometry optimization to accurately simulate charge cloud expansion. COMSOL Multiphysics was used to replicate accurate charge creation profiles using energy deposition information imported from radiation transport codes. A detailed simulation methodology is presented to benchmark preamplifier event pulses along with complexities in modeling the charge carrier motion along the etched microstructured trenches with Si–SiO 2 boundary conditions, including fixed oxide charge and interface trapping.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Prediction of Leakage Current and Depletion Voltage in Silicon Detectors Under Extraterrestrial Radiation Conditions

Silicon detection is a mature technology for registering the passage of charged particles. At the same time it continues to evolve toward increasing radiation tolerance as well as precision and adaptability. For these reasons it is likely to remain a critical element of detection of systems associated with extraterrestrial exploration. Silicon sensor leakage current and depletion voltage depend on the integrated fluence received by the sensor and on its thermal history during and after the irradiation process. For minimal assumptions on shielding and hence on the particle energy spectrum, and using published data on Martian ground temperature, we predict the leakage current density and the depletion voltage, as a function of time, of silicon sensors in transit to and deployed continuously on the Mars surface for a duration of up to 28 Earth-years, for several sensor geometries and a worst-case temperature scenario.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Highly Segmented Silicon Strip Detectors for Radiation Detection (LDRD Final Report)

Large area highly segmented silicon strip detectors were investigated for use in applied radiation detection applications. Two ASIC-based readout electronics solutions were tested for compatibility. During the analysis, it was determined that significant computational resources and highly specialized firmware are required to reconstruct the data into a meaningful data stream for generalized spectroscopic performance. Future investment in the technology and careful choice of readout ASIC is expected to demonstrate relevance in measuring high activity samples.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al 2 O 3 dielectric

The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al 2 O 3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al 2 O 3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance–voltage and current–voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H 2 O instead of O 3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H 2 O-grown Al 2 O 3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al 2 O 3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O 3 -grown MOS structures. Lastly, this can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2018

Feasibility of hard X-ray imaging using monolithic active pixel sensors (MAPS)

Silicon detectors have been widely used in high energy physics (HEP) experiments. The outstanding properties of silicon detectors include radiation hardness, small material budget, fine spatial resolution, high speed and low cost. In this paper, we report initial results of using a single-bit Monolithic Active Pixel Sensor (MAPS), a leading candidate for the next generation trackers in high luminosity colliders, for hard X-ray imaging. The MAPS responses to X-ray with different energies are obtained and compared with simulation. The observed cluster sizes are larger than that predicted by the Continuous Slowing Down Approximation (CSDA) model, indicating that the charge diffusion process might play an important in the MAPS response to low energy electrons. In conclusion, this work paves the way towards multiple layer ultrafast silicon sensor applications in synchrotrons and XFEL beamlines.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Radiation-Induced Dark Counts for Silicon Single-Photon Detectors in Space

Single-photon detectors operating on satellites for use in a quantum communications network can incur large dark-count-rate increases from the natural radiation environment of space. Displacement damage to the material lattice of a detector from the ionizing radiation can result in a permanent dark-count increase in the detector. In this work, we analyze the radiation-induced dark-count rate of a silicon single-photon avalanche diode onboard a satellite at different orbiting altitudes, as well as, the additional radiation from a nuclear-disturbed environment caused by a high-altitude nuclear explosion. For detectors on low Earth orbit satellites, protons are the biggest source of radiation damage and are best mitigated by choosing an orbit that minimizes exposure when passing through the South Atlantic Anomaly and Polar Cusps. Detectors on medium Earth orbit and geostationary orbit satellites, if shielded by more than 10 mm of aluminum, provide the best platform in terms of the least amount of radiation damage to the detectors. In the event of a high-altitude nuclear explosion, the artificial radiation belts produced by the explosion will cause too much damage to silicon single-photon detectors on low Earth orbit satellites and render them unfit for quantum communications in less than a day. Higher orbit satellites will only suffer minor dark-count-rate increases from the artificial radiation belts.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2017

a-Si:H TFT-silicon hybrid low-energy x-ray detector

Direct conversion crystalline silicon X-ray imagers are used for low-energy X-ray photon (4-20 keV) detection in scientific research applications such as protein crystallography. In this paper, we demonstrate a novel pixel architecture that integrates a crystalline silicon X-ray detector with a thin-film transistor amorphous silicon pixel readout circuit. We describe a simplified two-mask process to fabricate a complete imaging array and present preliminary results that show the fabricated pixel to be sensitive to 5.89-keV photons from a low activity Fe-55 gamma source. Furthermore, this paper presented can expedite the development of high spatial resolution, low cost, direct conversion imagers for X-ray diffraction and crystallography applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Studying the Pyroelectric Effect in AlN Epilayers

We have studied the pyroelectric effect in 6- to 12-μm-thick AlN epilayers grown by hydride–chloride vapor phase epitaxy (HVPE) on 4H-SiC substrates. The pyroelectric current was generated by means of dynamic laser action. Evolution of the temperature fields was monitored by direct measurements of the surface temperature with allowance for the specific thermal heterogeneity of the AlN/SiC system. In combination with the results of pyroelectric current measurements, these data allowed the pyrocoefficient of the AlN/SiC structure to be estimated at p ≈ 3.0 μC/(m{sup 2} K). Pyroelectric figures of merit of the given structure are calculated that can be used for the comparison of pyroelectric materials intended for the creation of IR radiation detectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Study of Viability and Challenges of using SiPMs as an Alternative to PMT’s in Scintillation Detectors for Nuclear Safeguards

The goals of this project are to identify fundamental and practical problems and features with SiPMs as they relate to IAEA detector needs, Identify published results and implementations of scintillation detectors tat use SiPMs that are of interest to IAEA, asses how effectively the fundamental problems were addresses, and perform simulations and experiments as needed to reproduce crucial results and make recommendations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Pixel-Strip Module Testing and Performance Analysis for the CMS Phase-2 Outer Tracker Upgrade

In response to the demanding environment of the High-Luminosity Large Hadron Collider (HL-LHC), the Compact Muon Solenoid (CMS) Experiment's Outer Tracker is being replaced with a lighter, higher-granularity, radiation-tolerant silicon detector capable of providing tracking information directly to the Level-1 trigger system. The new Outer Tracker consists of Pixel-Strip (PS) and Strip-Strip (2S) transverse momentum (pT) modules, which are assembled and tested at, among other centers, Fermilab's Silicon Detector Facility. PS modules consist of a pixel sensor, a strip sensor, and multiple application-specific integrated circuits (ASICs). This poster studies the performance of MaPSAs, silicon macro-pixel sensors bump-bonded to 16 macro-pixel ASICS. It presents the testing procedures for MaPSAs and MaPSA-strip sensor sub-assemblies, as well as the results of calibration and performance studies of two PS modules before and after irradiation. These results assess the impact of irradiation on module performance, providing insight into the modules' expected performance in the HL-LHC environment.

Kimrey, Emerson [Scripps College]↗
DOE OSTI2016

Radiation hardness and precision timing study of silicon detectors for the CMS High Granularity Calorimeter (HGC)

The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb –1 per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ~1.0 cm 2 and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb –1 , the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 10 16 neq/cm 2 . A radiation tolerance study after neutron irradiation of 300, 200, and 100 μm n-on-p and p-on-n silicon pads irradiated to fluences up to 1.6×10 16 neq/cm 2 is presented. In this work, the properties of these diodes studied before and after irradiation were leakage current, capacitance, charge collection efficiency, annealing effects and timing capability. The results of these measurements validate these sensors as candidates for the HGC system.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗