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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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16 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

SONOS Nonvolatile Memory Cell Programming Characteristics

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.

MacLeod, Todd C.↗
DOE OSTI2022

Physical Compact Model for Three-Terminal SONOS Synaptic Circuit Element

A well-posed physics-based compact model for a three-terminal silicon–oxide–nitride–oxide–silicon (SONOS) synaptic circuit element is presented for use by neuromorphic circuit/system engineers. Based on technology computer aided design (TCAD) simulations of a SONOS device, the model contains a nonvolatile memristor with the state variable QM representing the memristor charge under the gate of the three-terminal element. By incorporating the exponential dependence of the memristance on QM and the applied bias V for the gate, the compact model agrees quantitatively with the results from TCAD simulations as well as experimental measurements for the drain current. The compact model is implemented through VerilogA in the circuit simulation package Cadence Spectre and reproduces the experimental training behavior for the source–drain conductance of a SONOS device after applying writing pulses ranging from –12 V to +11 V, with an accuracy higher than 90%.

42 ENGINEERING↗
NASA NTRS2010

Modeling of Sonos Memory Cell Erase Cycle

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memories (NVSMS) have many advantages. These memories are electrically erasable programmable read-only memories (EEPROMs). They utilize low programming voltages, endure extended erase/write cycles, are inherently resistant to radiation, and are compatible with high-density scaled CMOS for low power, portable electronics. The SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. The SONOS floating gate charge and voltage, tunneling current, threshold voltage, and drain current were characterized during an erase cycle. Comparisons were made between the model predictions and experimental device data.

Phillips, Thomas A.↗
NASA NTRS2011

Modeling of SONOS Memory Cell Erase Cycle

Utilization of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile semiconductor memories as a flash memory has many advantages. These electrically erasable programmable read-only memories (EEPROMs) utilize low programming voltages, have a high erase/write cycle lifetime, are radiation hardened, and are compatible with high-density scaled CMOS for low power, portable electronics. In this paper, the SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. Comparisons were made between the model predictions and experimental data.

Phillips, Thomas A.↗
DOE OSTI2024

Low Power, Radiation Resilient Synchronous Edge Processing for Remote Monitoring

Next-generation space remote sensing systems may be equipped with imaging arrays that sense data at a rate that outstrips the processing capability of any computing hardware that can operate within a satellite’s power budget. This project developed novel convolutional and recurrent neural networks to detect and estimate point-like events amid clutter, and investigated their efficient and accurate implementation on analog in-memory computing systems that are 10-1000× more energy-efficient than digital processors. This project leveraged two memory devices at different levels of technological maturity: a large-scale analog computing prototype using commercial SONOS charge-trap memory, and electrochemical memory (ECRAM) with intrinsic radiation hardness. We experimentally demonstrated end-to-end analog processing of our neural networks on SONOS and characterized the radiation response of both SONOS and ECRAM. We advanced the state-of-the-art in ECRAM precision and reliability, and developed co-design methods to enable accurate long-term operation of SONOS analog accelerators in space radiation environments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1993

Arterial gas emboli in altitude-induced decompression sickness

Exposure to high altitudes can result in the evolved-gas condition referred to as decompression sickness (DCS). Ultrasonic monitoring techniques have clearly demonstrated the presence of venous gas emboli (VGE) during decompression. Although important to DCS research and our understanding of the physiological mechanisms of this condition, Venus gas emboli have not been considered clinically hazardous, unless in extreme numbers. Arterial gas emboli (AGE), on the other hand, are generally viewed with great concern. Arterial gas emboli can enter the cerebral arterial circulation and arrest blood flow resulting in potentially serious injury. Left ventricular gas emboli were observed with echo imaging in five volunteer subjects during exposure to simulated altitude. These serendipitous findings occurred during altitude exposure under 3 separate research protocols involving 79 subject exposures. The voluntary, fully informed consent of the subjects used in this research was obtained as required by AFR 169-3. A Hewlett-Packard SONOS 1000 Echo Imaging System was used to monitor for precordial gas emboli. The improved resolution of the SONOS 1000 appears to account for these new findings. Four subjects had high incidence DCS and VGE during previous research flights. One subject only had one flight. The altitudes and AGE onset times for the five cases were: (1) 25,500 ft/2:23, (2) 29,000 ft/0:27, (3) 19,500 ft/3:49, (4) 29,500 ft/3:15, and (5) 29,500 ft/1:31. In all five cases, at the time of AGE onset, the VGE scores were high from all monitored locations. Four of the cases were symptomatic at the time of AGE onset (pain and skin mottling). No cerebral manifestations were observed. All subjects were immediately recompressed to ground level and successfully treated with 2 hours of post-breathing or with hyperbaric oxygen therapy. In conclusion, previously undetected AGE were demonstrated--with and without DCS symptoms--during exposure to altitude. It appears that this gas transferred from the venous side to the arterial side via either intracardiac defects or the pulmonary circulation. The clinical and operational implications of this finding are yet to be determined.

Pilmanis, Andrew A.↗
NASA NTRS1994

Physical interpretation and development of ultrasonic nondestructive evaluation techniques applied to the quantitative characterization of textile composite materials

In this Progress Report, we describe our continuing research activities concerning the development and implementation of advanced ultrasonic nondestructive evaluation methods applied to the inspection and characterization of complex composite structures. We explore the feasibility of implementing medical linear array imaging technology as a viable ultrasonic-based nondestructive evaluation method to inspect and characterize complex materials. As an initial step toward the application of linear array imaging technology to the interrogation of a wide range of complex composite structures, we present images obtained using an unmodified medical ultrasonic imaging system of two epoxy-bonded aluminum plate specimens, each with intentionally disbonded regions. These images are compared with corresponding conventional ultrasonic contact transducer measurements in order to assess whether these images can detect disbonded regions and provide information regarding the nature of the disbonded region. We present a description of a standoff/delay fixture which has been designed, constructed, and implemented on a Hewlett-Packard SONOS 1500 medical imaging system. This standoff/delay fixture, when attached to a 7.5 MHz linear array probe, greatly enhances our ability to interrogate flat plate specimens. The final section of this Progress Report describes a woven composite plate specimen that has been specially machined to include intentional flaws. This woven composite specimen will allow us to assess the feasibility of applying linear array imaging technology to the inspection and characterization of complex textile composite materials. We anticipate the results of this on-going investigation may provide a step toward the development of a rapid, real-time, and portable method of ultrasonic inspection and characterization based on linear array technology.

Miller, James G.↗
NASA NTRS2001

An FPGA-Based Test-Bed for Reliability and Endurance Characterization of Non-Volatile Memory

Memory technologies are divided into two categories. The first category, nonvolatile memories, are traditionally used in read-only or read-mostly applications because of limited write endurance and slow write speed. These memories are derivatives of read only memory (ROM) technology, which includes erasable programmable ROM (EPROM), electrically-erasable programmable ROM (EEPROM), Flash, and more recent ferroelectric non-volatile memory technology. Nonvolatile memories are able to retain data in the absence of power. The second category, volatile memories, are random access memory (RAM) devices including SRAM and DRAM. Writing to these memories is fast and write endurance is unlimited, so they are most often used to store data that change frequently, but they cannot store data in the absence of power. Nonvolatile memory technologies with better future potential are FRAM, Chalcogenide, GMRAM, Tunneling MRAM, and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) EEPROM.

Rao, Vikram↗
NASA NTRS2002

The effect of repeated altitude exposures on the incidence of decompression sickness

INTRODUCTION: Repeated altitude exposures in a single day occur during special operations parachute training, hypobaric chamber training, unpressurized flight, and extravehicular space activity. Inconsistent and contradictory information exists regarding the risk of decompression sickness (DCS) during such hypobaric exposures. HYPOTHESIS: We hypothesized that four short exposures to altitude with and without ground intervals would result in a lower incidence of DCS than a single exposure of equal duration. METHODS: The 32 subjects were exposed to 3 different hypobaric exposures--condition A: 2 h continuous exposure (control); condition B: four 30-min exposures with descent/ascent but no ground interval between the exposures; condition C: four 30-min exposures with descent/ascent and 60 min of ground interval breathing air between exposures. All exposures were to 25,000 ft with 100% oxygen breathing. Subjects were observed for symptoms of DCS, and precordial monitoring of venous gas emboli (VGE) was accomplished with a SONOS 1000 echo-imaging system. RESULTS: DCS occurred in 19 subjects during A (mean onset 70+/-29 min), 7 subjects in B (60+/-34 min), and 2 subjects in C (40+/-18 min). There was a significant difference in DCS incidence between B and A (p = 0.0015) and C and A (p = 0.0002), but no significant difference between B and C. There were 28 cases of VGE in A (mean onset 30+/-23 min), 21 in B (41+/-35 min), and 21 in C (41+/-32 min) with a significant onset curve difference between B and A and between C and A, but not between B and C. Exposure A resulted in four cases of serious respiratory/neurological symptoms, while B had one and C had none. All symptoms resolved during recompression to ground level. CONCLUSION: Data indicate that repeated simulated altitude exposures to 25,000 ft significantly reduce DCS and VGE incidence compared with a single continuous altitude exposure.

Non-NASA Center↗
NASA NTRS2011

Results from On-Orbit Testing of the Fram Memory Test Experiment on the Fastsat Micro-Satellite

NASA is planning on going beyond Low Earth orbit with manned exploration missions. The radiation environment for most Low Earth orbit missions is harsher than at the Earth's surface but much less harsh than deep space. Development of new electronics is needed to meet the requirements of high performance, radiation tolerance, and reliability. The need for both Volatile and Non-volatile memory has been identified. Emerging Non-volatile memory technologies (FRAM, C-RAM,M-RAM, R-RAM, Radiation Tolerant FLASH, SONOS, etc.) need to be investigated for use in Space missions. An opportunity arose to fly a small memory experiment on a high inclination satellite (FASTSAT). An off-the-shelf 512K Ramtron FRAM was chosen to be tested in the experiment.

MacLeod, Todd C.↗
NASA NTRS2012

Development of Next Generation Memory Test Experiment for Deployment on a Small Satellite

The original Memory Test Experiment successfully flew on the FASTSAT satellite launched in November 2010. It contained a single Ramtron 512K ferroelectric memory. The memory device went through many thousands of read/write cycles and recorded any errors that were encountered. The original mission length was schedule to last 6 months but was extended to 18 months. New opportunities exist to launch a similar satellite and considerations for a new memory test experiment should be examined. The original experiment had to be designed and integrated in less than two months, so the experiment was a simple design using readily available parts. The follow-on experiment needs to be more sophisticated and encompass more technologies. This paper lays out the considerations for the design and development of this follow-on flight memory experiment. It also details the results from the original Memory Test Experiment that flew on board FASTSAT. Some of the design considerations for the new experiment include the number and type of memory devices to be used, the kinds of tests that will be performed, other data needed to analyze the results, and best use of limited resources on a small satellite. The memory technologies that are considered are FRAM, FLASH, SONOS, Resistive Memory, Phase Change Memory, Nano-wire Memory, Magneto-resistive Memory, Standard DRAM, and Standard SRAM. The kinds of tests that could be performed are read/write operations, non-volatile memory retention, write cycle endurance, power measurements, and testing Error Detection and Correction schemes. Other data that may help analyze the results are GPS location of recorded errors, time stamp of all data recorded, radiation measurements, temperature, and other activities being perform by the satellite. The resources of power, volume, mass, temperature, processing power, and telemetry bandwidth are extremely limited on a small satellite. Design considerations must be made to allow the experiment to not interfere with the satellite s primary mission.

MacLeod, Todd↗
DOE OSTI2025

Size and Structural Control of Mechanoluminescent ZnS:Mn 2+ Nanocrystals for Optogenetic Neuromodulation

Mechanoluminescent materials hold immense potential for various transformative applications, from medical imaging and diagnostics to health monitoring and wearable displays. Conventionally produced as bulk powders or microparticles, they face significant size limitations for advanced applications, particularly in biological systems and microscale devices. Here, this work presents an approach to ZnS:Mn 2+ nanocrystal synthesis that involves self-assembly and subsequent calcination. In addition to effective size control within the nanoscale, this approach promotes the formation of abundant stacking faults, significantly enhancing piezoelectric and mechanoluminescent properties by increasing trap density and reducing trap depth. Unlike mechanoluminescent materials produced using conventional methods, these nanocrystals demonstrate strong mechanoluminescence without requiring UV pre-excitation, and the light emission persists even after mechanical stress is removed. These advantageous properties make them promising candidates for optogenetic neuromodulation, as they can effectively trigger electrical signals in neurons upon ultrasound stimulation both with and without UV pre-excitation. The persistent mechanoluminescence prolongs the duration of neuronal electrical activity, providing an extended temporal window for neuromodulation compared to conventional mechanoluminescent materials. This study provides a scalable method for producing efficient mechanoluminescent nanoparticles and reveals the crucial role of particle size and defect structures in determining their mechanoluminescent behavior.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗