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At least 19 records

Split-Block Waveguide Polarization Twist for 220 to 325 GHz

A split-block waveguide circuit that rotates polarization by 90 has been designed with WR-3 input and output waveguides, which are rectangular waveguides used for a nominal frequency range of 220 to 325 GHz. Heretofore, twisted rectangular waveguides equipped with flanges at the input and output have been the standard means of rotating the polarizations of guided microwave signals. However, the fabrication and assembly of such components become difficult at high frequency due to decreasing wavelength, such that twisted rectangular waveguides become impractical at frequencies above a few hundred gigahertz. Conventional twisted rectangular waveguides are also not amenable to integration into highly miniaturized subassemblies of advanced millimeter- and submillimeter-wave detector arrays now undergoing development. In contrast, the present polarization- rotating waveguide can readily be incorporated into complex integrated waveguide circuits such as miniaturized detector arrays fabricated by either conventional end milling of metal blocks or by deep reactive ion etching of silicon blocks. Moreover, the present split-block design can be scaled up in frequency to at least 5 THz. The main step in fabricating a splitblock polarization-rotating waveguide of the present design is to cut channels having special asymmetrically shaped steps into mating upper and lower blocks (see Figure 1). The dimensions of the steps are chosen to be consistent with the WR-3 waveguide cross section, which is 0.864 by 0.432 mm. The channels are characterized by varying widths with constant depths of 0.432, 0.324, and 0.216 mm and by relatively large corner radii to facilitate fabrication. The steps effect both a geometric transition and the corresponding impedance-matched electromagnetic-polarization transition between (1) a WR-3 rectangular waveguide oriented with the electric field vector normal to the block mating surfaces and (2) a corresponding WR-3 waveguide oriented with its electric field vector parallel to the mating surfaces of the blocks. A prototype has been built and tested. Figure 2 presents test results indicative of good performance over nearly the entire WR-3 waveguide frequency band.

Ward, John

Integrated back to back barrier-N-N(+) varactor diode tripler using a split-waveguide block

The back-to-back barrier-N-N(+) (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance, freedom from external bias and suitability to planarization make it an ideal choice for high frequency, low power, odd harmonic generation. In this paper, the performance of a 220-GHz waveguide tripler using, for the first time, a planar GaAs bbBNN device integrated on a quartz microstrip circuit is presented. A new split-waveguide block design has been employed to provide the proper embedding impedances to the device at the input and third harmonic output frequencies. A flange-to-flange tripling efficiency of 7% has been obtained at 220 GHz with an output power in excess of 700 mu W. This is believed to be the highest conversion efficiency yet reported for a tripler with an integrated device at this frequency. Theoretical calculations indicate that substantial improvement is possible with modest changes to the device and circuit parameters.

QUARTZ MICROSTRIP CIRCUITS

Integrated Back-to-Back Barrier-N-N + Varactor Diode Tripler Using a Split-waveguide Block

The back-to-back barrier-N-N + (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance and suitability to planarization make it ideal choice for high frequency, low power, odd harmonic generation. In this paper, development of an integrated planar multiplier device and its performance as a 220 GHz tripler is presented. A new split-waveguide block design has been used to provide the proper embedding impedances to the device. The performance over 200-240 GHz has been measured and the integrated bbBNN device is shown to provide as much as 734 microwatts output power. A flange-to-flange tripling efficiency of 7% has been obtained. This is believed to be the highest conversion efficiency yet reported for all planar tripler at this frequency. The performance is expected to be improved further with minor changes to the device and circuit parameters.

interstellar

In-Phase Power-Combined Frequency Tripler at 300 GHz

This design starts with commercial 85- to 115-GHz sources that are amplified to as much as 250 mW using power amplifiers developed for the Herschel Space Observatory. The frequency is then tripled using a novel waveguide GaAs Schottky diode frequency tripler. This planar diode produces 26 mW at 318 GHz. Peak conversion efficiency is over 15 percent, and the measured bandwidth of about 265 - 30 GHz is limited more by the driving source than by the tripler itself. This innovation is based on an integrated circuit designed originally for a single-chip 260- to 340-GHz balanced tripler. The power-combined version has two mirror-image tripler chips that are power-combined in-phase in a single waveguide block using a compact Y-junction divider at the input waveguide, and a Y-junction combiner at the output waveguide. The tripler uses a split-block waveguide design with two independent DC bias lines.

Maestrini, Alain

Topics in the optimization of millimeter-wave mixers

This report is in three parts: 1. In the first part a user-oriented computer program for the analysis of single-ended Schottky diode mixers is described. The program is used to compute the performance of a 140-220 GHz mixer and excellent agreement with measurements at 150 and 180 GHz is obtained. A sensitivity analysis indicates the importance of various diode and mount characteristics on the mixer performance. 2. The second part of this report describes a computer program for the analysis of varactor diode multipliers. The diode may operate in either the reverse biased varactor mode or with substantial forward current flow where the conversion mechanism is predominantly resistive. In addition, a design for a varactor diode doubler, tunable over an output frequency range of 150-220 GHz, is given. The doubler has 10-20% conversion efficiency with an instantaneous bandwidth of 3%. 3. The third section of this report contains a description and analysis of i new H-plane rectangular waveguide transformer. The transformer can be made luckily and easily in split-block waveguide using a standard slitting saw. It is particularly suited for use in the millimeter-wave band, replacing conventional electroformed stepped transformers. A theoretical analysis of the transformer is given, and good agreement is obtained with measurements made at X-band. Design curves are included for transitions which have a VSWR <1.2 over a full waveguide band when the impedance ratio is as high as 4 to 1.

Millimeter-wave

A Robust Waveguide Millimeter-Wave Noise Source

This paper presents the design, fabrication, and characterization of a millimeter-wave noise source for the 160- 210 GHz frequency range. The noise source has been implemented in an E-split-block waveguide package and the internal circuitry was developed on a quartz substrate. The measured excess noise ratio at 200 GHz is 9.6 dB.

Calibrating

A High Efficiency Multiple-Anode 260-340 GHz Frequency Tripler

We report on the fabrication at the Jet Propulsion Laboratory of a fixed-tuned split-block waveguide balanced frequency tripler working in the 260-340 GHz band. This tripler will be the first stage of a x3x3x3 multiplier chain to 2.7 THz (the last stages of which are being fabricated at JPL) and is therefore optimized for high power operation. The multiplier features six GaAs Schottky planar diodes in a balanced configuration integrated on a GaAs membrane. Special attention was put on splitting the input power as evenly as possible among the diodes in order to ensure that no diode is overdriven. Preliminary RF tests indicate that the multiplier covers the expected bandwidth and that the efficiency is in the range 1.5-7.5 % with 100 mW of input power.

local oscillators

Packaging of microwave integrated circuits operating beyond 100 GHz

Several methods of packaging high speed (75-330 GHz) InP HEMT MMIC devices are discussed. Coplanar wirebonding is presented with measured insertion loss of less than 0.5dB and return loss better than -17 dB from DC to 110 GHz. A motherboard/daughterboard packaging scheme is presented which supports minimum loss chains of MMICs using this coplanar wirebonding method. Split waveguide block packaging approaches are presented in G-band (140-220 GHz) with two types of MMIC-waveguide transitions: E-plane probe andantipodal finline.

HEMT MMICS power amplifiers

Design of a Wideband 900 GHz Balanced Frequency Tripler for Radioastronomy

We report on the design of a fix-tuned split-block waveguide balanced frequency tripler working nominally at 900GHz. It uses a GaAs Schottky planar diode pair in a balanced configuration. The circuit will be fabricated with JPL membrane technology in order to minimize dielectric loading. The multiplier is bias-less to dramatically ease the mounting and the operating procedure. At room temperature, the expected output power is 50- 130 (micro)W in the band 800-970 GHz when the tripler is pumped with 4mW. By modifying the waveguide input and output matching circuit, the multiplier can be tuned to operate at lower frequencies.

Schottky diode multipliers

Design of a Wideband 6-Anode Frequency Tripler at 300 GHz with Optimum Balance

We report on the design methodology of a fix-tuned split-block waveguide balanced frequency tripler working nominally at 300 GHz. It features six GaAs Schottky planar diodes in a balanced configuration. The circuit will be fabricated with JPL membrane technology in order to minimize dielectric loading and insure an accurate and uniform thickness of the substrate. The multiplier power handling is limited by the breakdown voltage of the diodes that depends on the doping level of the active layer. With six diodes, the current choice for the doping level leads to medium power handling capabilities of about 50 mW. Increasing the number of diodes to eight would be an option but would lead to increased difficulties in design and fabrication.

Schottky diode multipliers

Multi-Anode Frequency Triplers at Sub-Millimeter Wavelengths

We report on the design methodology of fix-tuned split-block waveguide balanced frequency triplers working at 300,600 and 900 GHz. They feature four to six GaAs Schottky planar diodes in a balanced configuration. A 6-anode 300 GHz tripler, a 6-anode 560 GHz tripler and a 4-anode 900 GHz tripler will be fabricated with JPL membrane technology in order to minimize dielectric loading and ensure accurate thickness of the substrate. A 4-anode 600 GHz tripler was fabricated with JPL substrateless technology that delivers 0.8-1.6mW in the 540-640 GHz band at room temperature. When cooled to l2OK this tripler delivers 2-4mW from 540 to 640 GHz.

Schottky diodes

A 540-640-GHz High-efficiency Four-anode Frequency Tripler

We report on the design and performance of a broad-band, high-power 540-640-GHz fix-tuned balanced frequency tripler chip that utilizes four planar Schottky anodes. The suspended strip-line circuit is fabricated with a 12-micron-thick support frame and is mounted in a split waveguide block. The chip is supported by thick beam leads that are also used to provide precise RF grounding. At room temperature, the tripler delivers 0.9-1.8 mW across the band with an estimated efficiency of 4.5%-9%. When cooled to 120 K, the tripler provides 2.0-4.2 mW across the band with an estimated efficiency of 8%-12%.

balanced triplers

A Unique 520-590 GHz Biased Subharmonically-pumped Schottky Mixer

We report on the design and performance of a novel broadband, biased, subharmonic 520-590 GHz fix-tuned frequency mixer that utilizes planar Schottky diodes. The suspended stripline circuit is fabricated on a GaAs membrane mounted in a split waveguide block. The chip is supported by thick beam leads that are also used to provide precise radio frequency (RF) grounding, RF coupling and dc/intermediate frequency connections. At room temperature, the mixer has a measured double sideband noise temperature of 3000 to 4000 K across the design band.

Schottky diode mixers

NASA Tech Briefs, March 2008

Topics covered include: WRATS Integrated Data Acquisition System; Breadboard Signal Processor for Arraying DSN Antennas; Digital Receiver Phase Meter; Split-Block Waveguide Polarization Twist for 220 to 325 GHz; Nano-Multiplication-Region Avalanche Photodiodes and Arrays; Tailored Asymmetry for Enhanced Coupling to WGM Resonators; Disabling CNT Electronic Devices by Use of Electron Beams; Conical Bearingless Motor/Generators; Integrated Force Method for Indeterminate Structures; Carbon-Nanotube-Based Electrodes for Biomedical Applications; Compact Directional Microwave Antenna for Localized Heating; Using Hyperspectral Imagery to Identify Turfgrass Stresses; Shaping Diffraction-Grating Grooves to Optimize Efficiency; Low-Light-Shift Cesium Fountain without Mechanical Shutters; Magnetic Compensation for Second-Order Doppler Shift in LITS; Nanostructures Exploit Hybrid-Polariton Resonances; Microfluidics, Chromatography, and Atomic-Force Microscopy; Model of Image Artifacts from Dust Particles; Pattern-Recognition System for Approaching a Known Target; Orchestrator Telemetry Processing Pipeline; Scheme for Quantum Computing Immune to Decoherence; Spin-Stabilized Microsatellites with Solar Concentrators; Phase Calibration of Antenna Arrays Aimed at Spacecraft; Ring Bus Architecture for a Solid-State Recorder; and Image Compression Algorithm Altered to Improve Stereo Ranging.

Source record

A Cryogenic Waveguide Mount for Microstrip Circuit and Material Characterization

A waveguide split-block fixture used in the characterization of thin-film superconducting planar circuitry at millimeter wavelengths is described in detail. The test fixture is realized from a pair of mode converters, which transition from rectangular-waveguide to on-chip microstrip-line signal propagation via a stepped ridge-guide impedance transformer. The observed performance of the W-band package at 4.2K has a maximum in-band transmission ripple of 2dB between 1.53 and 1.89 times the waveguide cutoff frequency. This metrology approach enables the characterization of superconducting microstrip test structures as a function temperature and frequency. The limitations of the method are discussed and representative data for superconducting Nb and NbTiN thin film microstrip resonators on single-crystal Si dielectric substrates are presented.

U-yen, Kongpop

A Cryogenic Waveguide Mount for Microstrip Circuit and Material Characterization

A waveguide split-block fixture used in the characterization of thin-film superconducting planar circuitry at millimeter wavelengths is described in detail. The test fixture is realized from a pair of mode converters, which transition from rectangular-waveguide to on-chip microstrip-line signal propagation via a stepped ridge-guide impedance transformer. The observed performance of the W-band package at 4.2K has a maximum in-band transmission ripple of 2dB between 1.53 and 1.89 times the waveguide cutoff frequency. This metrology approach enables the characterization of superconducting microstrip test structures as a function temperature and frequency. The limitations of the method are discussed and representative data for superconducting Nb and NbTiN thin film microstrip resonators on single-crystal Si dielectric substrates are presented.

U-yen, Kongpop