Stacking faults in TiC.
Stacking faults in titanium carbide shown by electron microscopy bounded by partial dislocations
TITANIUM CARBIDE↗
SEARCH · Search NASA
Results for “STACKING FAULT”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Influence of impurities on stacking fault energy determination
Stacking fault energy determination, discussing impurities influence in equilibrium dimensions distortion of extended nodes in titanium carbide
Venables, J. D.↗
Hydrogen Embrittlement And Stacking-Fault Energies
Embrittlement in Ni/Cu alloys appears related to stacking-fault porbabilities. Report describes attempt to show a correlation between stacking-fault energy of different Ni/Cu alloys and susceptibility to hydrogen embrittlement. Correlation could lead to more fundamental understanding and method of predicting susceptibility of given Ni/Cu alloy form stacking-fault energies calculated from X-ray diffraction measurements.
Parr, R. A.↗
The measurement of the stacking fault energy in copper, nickel and copper-nickel alloys
The relationship of hydrogen solubility and the hydrogen embrittlement of high strength, high performance face centered cubic alloys to the stacking fault energy of the alloys was investigated. The stacking fault energy is inversely related to the distance between the two partial dislocations which are formed by the dissociation of a perfect dislocation. The two partial dislocations define a stacking fault in the crystal which offers a region for hydrogen segregation. The distance between the partial dislocations is measured by weak beam, dark field transmission electron microscopy. The stacking fault energy is calculated. Pure copper, pure nickel and copper-nickel single crystals are used to determine the stacking fault energy.
Leighly, H. P., Jr.↗
Investigation of Stacking Fault and Antiphase Boundary Segregation in Ni-Based Superalloys Using Density Functional Theory
Ni-base superalloys have a long history of use in jet turbine engines, and efforts to improve their performance in that application are ongoing. It is known that the precipitation of the Ni3Al γ' phase within the disordered FCCγ phase strengthens the overall material. However, in the high-temperature environment found inside a turbine engine during operation, creep can cause the γ' phase to transform to different, weaker phases along stacking faults, leading to a deterioration of performance. In the γ' phase one mode of creep deformation is the formation of stacking fault ribbons, which consist of intrinsic stacking faults further shearing into antiphase boundaries (APBs). It is also known that certain alloying additions exhibit segregation to stacking faults. If segregating elements could be identified which segregate to the intrinsic stacking fault, but not to the APB, the inclusion of such elements could lead to improved creep strength in these alloys. To investigate this possibility, a density functional investigation of the segregation of W, Mo and Cr to both a superlattice intrinsic stacking fault (SISF) and an APB was performed. It was found that W, Mo and Cr all exhibit segregation to the SISF. In contrast, for the APB, Cr was either energy-neutral, or segregates, depending on the presence of additional nearby Cr, or on the specific lattice site upon which it was placed, while Mo and W did not segregate. Because W and Mo segregate to the SISF but not to the APB, the inclusion of these elements could provide a degree of protection against creep-related deterioration.
Good, Brian S.↗
Segregation and Phase Transformations Along Superlattice Intrinsic Stacking Faults in Ni-Based Superalloys
In this study, local chemical and structural changes along superlattice intrinsic stacking faults combine to represent an atomic-scale phase transformation. In order to elicit stacking fault shear, creep tests of two different single crystal Ni-base superalloys, ME501 and CMSX-4, were performed near 750 degrees Centigrade using stresses of 552 megapascals and 750 megapascals, respectively. Through high resolution Scanning Transmission Electron Microscopy (STEM) and state-of-the-art energy dispersive x-ray spectroscopy, ordered compositional changes were measured along SISFs (Superlattice Intrinsic Stacking Faults) in both alloys. For both instances, the elemental segregation and local crystal structure present along the SISFs are consistent with a nanoscale to D019 (ordering of a hexagonal close-packed crystal) phase transformation. Another notable observation is prominent Cr- and Co-rich Cottrell atmospheres and new evidence of more complex reordering processes responsible for the formation of these faults. These findings are further supported using density functional theory calculations and High Angle Annular Dark Field (HAADF) STEM image simulations.
STEM-EDS↗
The determination of the stacking fault energy in copper-nickel alloys
Methods for determining the stacking fault energies of a series of nickel-copper alloys to gain an insight into the embrittling effect of hydrogen are evaluated. Plans for employing weak beam dark field electron microscopy to determine stacking fault energies are outlined.
Leighly, H. P., Jr.↗
Possible relation of friction of copper- aluminum alloys with decreasing stacking-fault energy
Friction of copper-aluminum alloys related to decreasing stacking-fault energy
STACKING FAULT ENERGY↗
Ab-Initio Study of Stacking Fault Segregation Behavior in Ni-based Superalloys at High Temperatures
Ni-based superalloys demonstrate extraordinary creep properties compared to traditional metallic systems due to the formation of L12 (γ’) precipitates. Despite experimental evidence of alloying element segregation to the stacking faults, prior ab-initio efforts indicated repulsion of Nb from superlattice intrinsic stacking faults (SISFs) . Due to the importance of this element in key strengthening mechanisms, we developed a new technique to account for multi-component segregation behavior at temperature combining ab-initio molecular dynamics (AIMD) and Monte-Carlo (MC) simulations. Using this technique, we replicated experimentally observed segregation behavior of Nb, Co, and Ti to the SISF in L12 (Figure 1). Furthermore, we investigated the co-segregation behaviors of individual pairs of alloying elements to determine the interaction effects which lead to this segregation behavior in the full alloy system. By simulating the reduced-chemistry models using our approach, we reconciled previous ab-initio calculations demonstrating repulsion of Nb from the SISF and the experimentally observed segregation behavior.
Molecular Dynamics↗
The mechanisms and temperature dependence of superlattice stacking fault formation in the single-crystal superalloy PWA 1480
The mechanism of the formation of superlattice staking faults in the single-crystal nickel-base superalloy PWA 1480 was investigated by observing deformation microstructures in the superalloy single crystals in the temperature range 20-1100 C. Results showed that, in addition to superlattice stacking faults observed after slow strain rate deformation at temperatures from 700 to 950 C, a high-density of superlattice staking faults formed after deformation at 200 C and below. The mechanisms of fault formation, which are different in the high- and the low-temperature regimes, are discussed.
Milligan, Walter W.↗
Effect of Stacking Faults on the X-Ray Diffraction Profiles of Beta-SiC Powders
X-ray diffraction patterns or beta-SiC (3C or the cubic polytype or sic) powders often exhibit an additional peak at d = 0.266 nm, high background intensity around the (111) peak, and relative intensities for peaks which differ from those predicted from the crystal structure. Computer simulations were used to show that all these features are due to stacking faults in the powders and not due to the presence of other polytypes in the powders. Such simulations allow diffraction patterns to be generated for different types, frequencies, and spatial distribution or faults. Comparison of the simulation results to the XRD data indicates that the B-SiC particles consist either of heavily faulted clusters distributed irregularly between regions that have only occasional faults or twins, or the powders consist of two types of particles with different populations of faults: those with a high density of faults and those with only twins or occasional faults. Additional information is necessary to determine which description is correct. However, the simulation results can be used to rule out certain fault configurations.
Pujar, Vijay V.↗
The correlation between the temperature dependence of the CRSS and the formation of superlattice-intrinsic stacking faults in the nickel-base superalloy PWA 1480
The PWA 1480 nickel-base superalloy is known to exhibit a unique minimum in the critical resolved shear stress (CRSS) at about 400 C. This paper reports an observation of a deformation mechanism whose temperature dependence correlates exactly with the reduction in the CRSS. It was found that, after monotonic or cyclic deformation of PWA 1480 at 20 C, the deformation substructures typically contain high density of superlattice-intrinsic stacking faults (S-ISFs) within the gamma-prime precipitates. As the temperature of deformation is increased, the density of S-ISFs is reduced, until finally no faults are observed after deformation in the range from 400 to 705 C. The reduction in the fault density corresponds exactly to the reduction in the CRSS, and the temperature at which the fault density is zero corresponds with the minimum in the CRRS. Two possible mechanisms related to the presence of the S-ISFs in the alloy are considered.
Milligan, Walter W.↗
The Effect Stacking Fault Segregation and Phase Transformations have on Creep Strength in Ni-based Superalloys
In this study, two commercially similar polycrystalline Ni-based disk superalloys (LSHR and ME3) were creep tested at 760C and 552MPa to approximately 0.3% plastic strain. LSHR consistently displayed superior creep properties at this stress/temperature regime even though the microstructural characteristics between the two alloys were comparable. High resolution structural and chemical analysis, however, revealed significant differences between the two alloys among active gamma prime shearing modes involving superlattice intrinsic and extrinsic stacking faults. In ME3, Co and Cr segregation and Ni and Al depletion were observed along the intrinsic faults - revealing a gamma prime -to- gamma phase transformation. Conversely in LSHR, an alloy with a higher W content, Co and W segregation was observed along the intrinsic faults. This observation combined with scanning transmission electron microscopy (STEM) simulations confirm a gamma prime-to-D019 phase transformation along the intrinsic faults in LSHR. Using experimental observations and density functional theory calculations, a novel local phase transformation strengthening mechanism is proposed that could be further utilized to improve the high temperature creep capabilities of Ni-base disk alloys.
Superalloy↗
Computer Simulations to Study Diffraction Effects of Stacking Faults in Beta-SiC: II. Experimental Verification: Experimental Verification - 2
Earlier results from computer simulation studies suggest a correlation between the spatial distribution of stacking errors in the Beta-SiC structure and features observed in X-ray diffraction patterns of the material. Reported here are experimental results obtained from two types of nominally Beta-SiC specimens, which yield distinct XRD data. These samples were analyzed using high resolution transmission electron microscopy (HRTEM) and the stacking error distribution was directly determined. The HRTEM results compare well to those deduced by matching the XRD data with simulated spectra, confirming the hypothesis that the XRD data is indicative not only of the presence and density of stacking errors, but also that it can yield information regarding their distribution. In addition, the stacking error population in both specimens is related to their synthesis conditions and it appears that it is similar to the relation developed by others to explain the formation of the corresponding polytypes.
Pujar, Vijay V.↗
High temperature deformation of dispersion strengthened nickel alloys. 1 - The influence of initial structure on tensile and creep deformation of TD nickel. 2 - The effect of matrix stacking fault energy on creep of Ni-Cr-ThO2 alloys Final report, 9 Feb. 1967 - 9 Feb. 1968
High temperature creep studies on unaltered, and recrystallized nickel alloys
Clauer, A. H.↗
Determination of the gaseous hydrogen ductile-brittle transition in copper-nickel alloys
A series of copper-nickel alloys were fabricated, notched tensile specimens machined for each alloy, and the specimens tested in 34.5 MPa hydrogen and in air. A notched tensile ratio was determined for each alloy and the hydrogen environment embrittlement (HEE) determined for the alloys of 47.7 weight percent nickel to 73.5 weight percent nickel. Stacking fault probability and stacking fault energies were determined for each alloy using the x ray diffraction line shift and line profiles technique. Hydrogen environment embrittlement was determined to be influenced by stacking fault energies; however, the correlation is believed to be indirect and only partially responsible for the HEE behavior of these alloys.
Parr, R. A.↗
Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy
The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions. Contrast extinction analysis of these dislocation lines reveals they are edge type basal plane dislocations that track the growth direction. Polytype phase transition and stacking faults were observed by high-resolution TEM (HRTEM), in agreement with SWBXT and Raman scattering.
Single Crystal↗
Pre- and post-annealing of mechanical damage in silicon wafers
Basic properties of mechanical damage in silicon consisting of cracks and abrasion were studied using transmission electron microscopy. The crystallographic structure of mechanical damage was determined before and after high temperature annealing. The main findings include that stresses in silicon around crack tips are not plastically relieved at room temperature and that abrasion at room temperature introduces shear loops into the silicon. It was also found that cracks of micron size can be annealed out, specifically, if cleavage occurs on 111 planes. The healing products of such cracks are 60 deg and 90 deg dislocations. Submicron cracks transform into stacking faults during annealing. Likewise high concentrations of shear loops due abrasion were found to anneal into stacking faults. A one to one correlation between surface areas containing small cracks and stacking faults was made. Measurements of damage removal on silicon surfaces through chemical-mechanical etching techniques are presented. It is shown that silicon dioxide repolishes damaged silicon surfaces most effectively.
Schwottke, G. H.↗